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    Black Box Corporation EMERW-020-R2-W1

    1 Year Warranty For Emerw-020-R2 |Black Box EMERW-020-R2-W1
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    Newark EMERW-020-R2-W1 Bulk 1
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    Black Box Corporation EMERW-020-R2-W3

    3 Year Warranty For Emerw-020-R2 |Black Box EMERW-020-R2-W3
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    Newark EMERW-020-R2-W3 Bulk 1
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    Sumitomo Wiring Systems LTD 8240-0245

    Automotive Connectors TER-W025TW-FL2
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    TTI 8240-0245 Reel 35,000
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    Black Box Corporation EMERW-020-R2

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    NAC EMERW-020-R2 1 1
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    Neutron USA EMERW-020-R2 1
    • 1 $680.58
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    ERW02 Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    ERW02-060 Fuji Electric Model Package Type IGBTs Original PDF
    ERW02-060 Unknown FAST RECOVERY DIODE, 600V, 10A, Silicon Diode Original PDF
    ERW02-060 Fuji Electric Silicon Diode Scan PDF
    ERW02-060 Fuji Electric SILICON DIODE Scan PDF
    ERW02-060 Fuji Electric SILICON DIODE Scan PDF

    ERW02 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    diode 10a 600v

    Abstract: power Diode 200V 10A 600v "Power Diode" ERW02-060 600v 10A diode
    Text: ERW02-060 10A/600V Fast Recovery Diode for IGBT Outline Drawings Equivalent circuit Units mm K A Maximum ratings and characteristics Absolute maximum ratings (Tc=25°C) Item Repetitive Reverse Voltage Repetitive peak surge current Average rectiffied forward current


    Original     		PDF ERW02-060 0A/600V) 20kHz ERW02 diode 10a 600v power Diode 200V 10A 600v "Power Diode" 600v 10A diode

    mp2a5100

    Abstract: ya868c12 YA868C15 2sk4004 YG865C10 F5049 diode 3a05 Diode SMD SJ 24 Diode SMD SJ 09 Diode SMD SJ 28
    Text: 富士電機半導体 総 合 カ タ ログ FUJI SEMICONDUCTORS ● パワー MOSFET Power MOSFETs ● 整流ダイオード Rectifier diodes ● パワーデバイス Power devices ● 集積回路 Integrated circuits ● 圧力センサ Pressure sensors


    Original     		PDF RH011h 2007-10B120FIS mp2a5100 ya868c12 YA868C15 2sk4004 YG865C10 F5049 diode 3a05 Diode SMD SJ 24 Diode SMD SJ 09 Diode SMD SJ 28

    igbt 200v 20a

    Abstract: tc122 25 1MBH65D-090A igbt 200V 5A TC122 1MBH60D-090A TC122-25 1mbh ERW03-060 ERW04-060
    Text: パワーデバイス / Power Devices IGBT • IGBTモールドタイプ Molded Package Type IGBTs 電子レンジ用モールドタイプ Molded package types, such as microwave ovens 形 式 Device type 1MBH60D-090A 1MBH65D-090A VCES VGES Volts 900 900


    Original     		PDF 1MBH60D-090A 1MBH65D-090A ERW01-060 ERW02-060 ERW03-060 ERW04-060 ERW05-060 ERW06-060 ERW07-120 O-220AB igbt 200v 20a tc122 25 1MBH65D-090A igbt 200V 5A TC122 1MBH60D-090A TC122-25 1mbh ERW03-060 ERW04-060

    tc122 25

    Abstract: 1MBH75D-060S 1MBH65D-090A TC1278 1MBH50D060 TO-3PL 1MB15D-060 1MBH60D 1MBC05-060 1MBC10-060
    Text: パワーデバイス / Power Devices IGBT • IGBTモールドタイプ Molded Package Type IGBTs 600Vクラス 産業用モールドタイプ 600 volts class molded package types 形 式 Device type IGBT VCES VGES 1MBG05D-060 1MBC05-060 1MBC05D-060


    Original     		PDF 1MBG05D-060 1MBC05-060 1MBC05D-060 1MBH05D-060 1MBG10D-060 1MBC10-060 1MBC10D-060 1MBH10D-060 1MBC15-060 1MB15D-060 tc122 25 1MBH75D-060S 1MBH65D-090A TC1278 1MBH50D060 TO-3PL 1MB15D-060 1MBH60D 1MBC05-060 1MBC10-060

    2MBI450U4E-120

    Abstract: 2MBI400U4H-120 2MBI300U4H-120 THYRISTOR TC122 6MBP75RU2A120 2MBI75U4A-120 7MBP75RU2A120 2mbi75u4a120 7MBR25SA120 05 2MBI200U4H-120
    Text: パワーデバイス/Power Devices IGBT • IGBTモジュールの特長 Features of the IGBT Module 第6世代IGBTモジュール Vシリーズ 6th Gen. IGBT Module V-series ■特長 Features パッケージ小型化と出力のパワー UP を実現！


    Original     		PDF max175 2MBI600TN-060V 2MBI450UN-120V 2MBP600UN-120V 2MBI450U4E-120 2MBI400U4H-120 2MBI300U4H-120 THYRISTOR TC122 6MBP75RU2A120 2MBI75U4A-120 7MBP75RU2A120 2mbi75u4a120 7MBR25SA120 05 2MBI200U4H-120

    ERW02-060

    Abstract: No abstract text available
    Text: SPEC I F I CAT I O SILICON DIODE DEVICE NAME TYPE NAf£ : E RWO 2- 0 6 0 SPEC. No. . DATE Fuji E l e c t r i c Co.,Ltd. This Specification is subject to change without notice. DATE DRAWN NAM E APPROVED Fuji Electric C artel z CHECKED 1/6 Y 0257-R-004a Rati ngs and c h a r a c t e r i s t i c s of Fuji


    OCR Scan     		PDF 0257-R-004a t0-220ac 20kHz Duty50X ERW02-060

    LT 220 diode

    Abstract: No abstract text available
    Text: DISCRETE IGBT 600 VO LT, D IS C R E T E IGBT • 5-50 Amps Device Vces !' Type Volts 60B 1MBC05-060 1MBC10-060 1MBC15-060 1MB20-060 1MB30-060 1MBH50-060 600 600 600 600 600 V g e =15V lc Cont. Pc Per&BT VcE sal Max. Amps 5 10 15 20 30 50 Watts Volts 3.0 3.0


    OCR Scan     		PDF 1MBC05-060 1MBC10-060 1MBC15-060 1MB20-060 1MB30-060 1MBH50-060 TQ-22Q O-220 LT 220 diode

    Untitled

    Abstract: No abstract text available
    Text: SPEC DEVICE NAME : TYPE NAME 1 F 1CAT 10 N SILICON DIODE E R W O SPEC. No. : DATE : > 2 - 0 6 0 Fu j i E l e c t r i c Co.,Ltd. This Specification is subject to change without notice. DATE NAME APPROVED Fuji Electric CaJL.td. DRAWN -A CHECKED o •XL o 3:


    OCR Scan     		PDF 0257-R-004a T0-220AC 20kHz Duty50X H04-004-03 ERW02

    Untitled

    Abstract: No abstract text available
    Text: SP EC I F I C A T I ON SILICON DIODE DEVICE NAME TYPE NAME ERWO 2 - 0 > 60 SPEC. No. . DATE F u j i E l e c t r i c Co., Ltd. This S p e c ific a tio n is subject to change without notice. DAT É DRAWN NAME APPROVED Fuji E lectric C a n te i — á jx CHECKED


    OCR Scan     		PDF 0257-R-0Q4a TD-220AC 20kHr

    Untitled

    Abstract: No abstract text available
    Text: SPEC DEVICE NAME : TYPE NAME 1 F 1CAT 10 N SILICON DIODE E R W O SPEC. No. : DATE : > 2 - 0 6 0 Fu j i E l e c t r i c Co.,Ltd. This Specification is subject to change without notice. DATE NAME APPROVED Fuji Electric CaJL.td. DRAWN -A CHECKED o •XL o 3:


    OCR Scan     		PDF 0257-R-004a T0-220AC 20kHz Duty50X H04-004-03 ERW02

    Untitled

    Abstract: No abstract text available
    Text: S P E C DEVICE NAME I F : TYPE NAME I C A T 1 ON SILICON DIODE . E R W O 2 - 0 6 0 SPEC. No. DATE : F u j i E l e c t r i c Co,. Ltd. This Specification is subject to change without notice. DATE NAME APPROVED DRAWN Fuji Electric CaJLtd. - Ú CHECKED 1/6


    OCR Scan     		PDF 0257-R-0 20kHz Duty50X