schematic diagram hdmi to rca
Abstract: No abstract text available
Text: CS48L10 32-Bit Audio DSP Product CRD48L10-4in4out Board Manual Copyright Cirrus Logic, Inc. 2012 All Rights Reserved http://www.cirrus.com NOV 2012 DS998DB1 CS48L10 Contacting Cirrus Logic Support For all product questions and inquiries, contact a Cirrus Logic Sales Representative.
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CS48L10
32-Bit
CRD48L10-4in4out
DS998DB1
\schematics\crd48l10
schematic diagram hdmi to rca
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IXGR50N160H1
Abstract: No abstract text available
Text: Advance Technical Information High Voltage IGBT with Diode IXGR50N160H1 VCES = 1600V IC110 = 36A VCE sat ≤ 2.30V ( Electrically Isolated Tab) ISOPLUS247TM Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1600 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ
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IXGR50N160H1
IC110
ISOPLUS247TM
338B2
IXGR50N160H1
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IXBX64N250
Abstract: IC100 IXBK64N250 PLUS247
Text: High Voltage, High Gain BiMOSFETTM IXBK64N250 IXBX64N250 VCES IC110 = 2500V = 64A ≤ 3.0V VCE sat Monolithic Bipolar MOS Transistor TO-264 (IXBK) G Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 2500 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ
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IXBK64N250
IXBX64N250
IC110
O-264
IC100
64N250
5-10-A
IXBX64N250
IC100
IXBK64N250
PLUS247
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IXTN17N120L
Abstract: No abstract text available
Text: Advance Technical Information Linear Power MOSFET With Extended FBSOA IXTN17N120L VDSS ID25 D N-Channel Enhancement Mode Avalanche Rated = 1200V = 17A Ω ≤ 990mΩ RDS on G S S miniBLOC, SOT-227 B (IXTN) E153432 Symbol Test Conditions VDSS TJ = 25°C to 150°C
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IXTN17N120L
OT-227
E153432
17N120L
IXTN17N120L
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Untitled
Abstract: No abstract text available
Text: Preliminary Technical Information PolarTM Power MOSFET HiPerFETTM IXFR32N100P VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ
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IXFR32N100P
32N100P
8-24-07-B
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Untitled
Abstract: No abstract text available
Text: Preliminary Technical Information PolarTM Power MOSFET HiPerFETTM IXFR30N110P VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1100 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ
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IXFR30N110P
300ns
ISOPLUS247
E153432
30N110P
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Untitled
Abstract: No abstract text available
Text: Polar VHVTM Power MOSFET IXTA08N100P IXTP08N100P IXTY08N100P VDSS ID25 RDS on = 1000V = 0.8A ≤ Ω 20Ω N-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) Symbol Test Conditions VDSS TJ = 25°C to 150°C Maximum Ratings 1000 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ
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IXTA08N100P
IXTP08N100P
IXTY08N100P
O-263
08N100P
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Untitled
Abstract: No abstract text available
Text: PolarTM Power MOSFET HiPerFETTM VDSS ID25 IXFL44N100P RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = = ≤ ≤ 1000V 22A Ω 240mΩ 300ns ISOPLUS i5-PakTM (HV) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000
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IXFL44N100P
300ns
44N100P
4-01-08-D
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Untitled
Abstract: No abstract text available
Text: PolarTM Power MOSFET VDSS ID25 IXTA08N100P IXTP08N100P IXTY08N100P = 1000V = 0.8A Ω ≤ 20Ω RDS on N-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) G Symbol Test Conditions VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ 1000
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IXTA08N100P
IXTP08N100P
IXTY08N100P
O-263
08N100P
4-02-08-A
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IXTN8N150L
Abstract: No abstract text available
Text: Preliminary Technical Information Linear Power MOSFET w/Extended FBSOA VDSS ID25 IXTN8N150L D N-Channel Enhancement Mode Guaranteed FBSOA = 1500V = 7.5A Ω = 3.6Ω RDS on G S S miniBLOC, SOT-227 B E153432 S Symbol Test Conditions G Maximum Ratings VDSS TJ = 25°C to 150°C
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IXTN8N150L
OT-227
E153432
8N15L
100ms
IXTN8N150L
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Untitled
Abstract: No abstract text available
Text: Preliminary Technical Information IXTA90N15T IXTH90N15T IXTP90N15T IXTQ90N15T Trench Gate Power MOSFET N-Channel Enhancement Mode Avalanche Rated VDSS ID25 = = 150V 90A Ω 20mΩ RDS on ≤ TO-263 (IXTA) Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 175°C
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IXTA90N15T
IXTH90N15T
IXTP90N15T
IXTQ90N15T
O-263
O-247
90N15T
8-07-A
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Untitled
Abstract: No abstract text available
Text: High Voltage IGBT VCES = 2500V IC25 = 30A VCE sat ≤ 2.9V IXGF25N250 For Capacitor Discharge Applications ( Electrically Isolated Tab) ISOPLUS i4-PakTM Symbol Test Conditions VCES TJ = 25°C to 150°C 2500 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 2500 V
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IXGF25N250
IC110
25N250
5P-P528
4-21-08-E
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IXTN17N120L
Abstract: No abstract text available
Text: LinearTM Power MOSFET w/ Extended FBSOA IXTN17N120L VDSS ID25 RDS on D N-Channel Enhancement Mode Avalanche Rated Guaranteed FBSOA = 1200V = 15A Ω < 900mΩ G S S miniBLOC E153432 S G Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1200 V
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IXTN17N120L
E153432
100ms
17N120L
02-18-09-B
IXTN17N120L
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IXGH100N30C3
Abstract: 100N30 100N30C3
Text: Preliminary Technical Information GenX3TM 300V IGBT IXGH100N30C3 VCES IC110 VCE sat tfi typ High Speed PT IGBTs for 50-150kHz switching Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 300 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 300 V VGES Continuous
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IXGH100N30C3
IC110
50-150kHz
O-247
100N30C3
IXGH100N30C3
100N30
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IXFB40N110P
Abstract: IXFB 40N110P 40n110p F40N
Text: PolarTM Power MOSFET HiPerFETTM IXFB40N110P VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = = ≤ ≤ 1100V 40A Ω 260mΩ 300ns PLUS264TM (IXFB) Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ
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IXFB40N110P
300ns
PLUS264TM
40N110P
3-28-08-A
IXFB40N110P
IXFB 40N110P
F40N
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IXFN44N100P
Abstract: 44N100P 40108
Text: IXFN44N100P PolarTM Power MOSFET HiPerFETTM VDSS ID25 = = ≤ ≤ RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode miniBLOC, SOT-227 B (IXFN) E153432 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ
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IXFN44N100P
300ns
OT-227
E153432
44N100P
4-01-08-D
IXFN44N100P
40108
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IXTH96N25T
Abstract: IXTQ96N25T 96N25T 96N2
Text: Preliminary Technical Information TrenchHVTM Power MOSFET IXTH96N25T IXTQ96N25T IXTV96N25T VDSS ID25 = 250V = 96A Ω ≤ 29mΩ RDS on N-Channel Enhancement Mode Avalanche Rated TO-247 (IXTH) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C
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IXTH96N25T
IXTQ96N25T
IXTV96N25T
O-247
96N25T
IXTH96N25T
IXTQ96N25T
96N25T
96N2
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IXTA90N15T
Abstract: IXTP90N15T 90N15T IXTH90N15T
Text: Preliminary Technical Information Trench Gate Power MOSFET VDSS ID25 IXTA90N15T IXTH90N15T IXTP90N15T IXTQ90N15T N-Channel Enhancement Mode Avalanche Rated = = 150V 90A Ω 20mΩ RDS on ≤ TO-263 (IXTA) Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 175°C
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IXTA90N15T
IXTH90N15T
IXTP90N15T
IXTQ90N15T
O-263
O-220
O-247)
90N15T
8-07-A
IXTA90N15T
IXTP90N15T
IXTH90N15T
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IXGP90N33TBM-A
Abstract: IXGP90N33 90n33 IXGP90N
Text: IXGP90N33TBM-A Trench gate IGBT For PDP Applications VCES = 330V = 360A ICP VCE sat ≤ 1.60V OVERMOLDED TO-220 W/ FORMED LEAD (IXGP.M-A) Symbol Test Conditions VCES TJ = 25°C to 150°C 330 V VGEM Transient ±30 V IC25 TC = 25°C ICP TJ ≤ 150°C, tp ≤ 1 s
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IXGP90N33TBM-A
O-220
90N33TB
5-27-08-B
IXGP90N33TBM-A
IXGP90N33
90n33
IXGP90N
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IXTH160N15T
Abstract: 160n15t
Text: Preliminary Technical Information TrenchHVTM Power MOSFET IXTH160N15T VDSS ID25 RDS on = 150 V = 160 A Ω ≤ 9.6 mΩ N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1MΩ
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IXTH160N15T
160N15T
IXTH160N15T
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IXBX64N250
Abstract: IXBK64N250 64N250 IXBX 64N250 PLUS247 128a
Text: Preliminary Technical Information High Voltage, High Gain BiMOSFETTM IXBK64N250 IXBX64N250 VCES IC25 = 2500 = 75 ≤ 3.0 VCE sat Monolithic Bipolar MOS Transistor V A V TO-264 (IXBK) Symbol Test Conditions VCES TJ = 25°C to 150°C VGES Maximum Ratings 2500
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IXBK64N250
IXBX64N250
O-264
IC110
PLUS247TM
64N250
IXBX64N250
IXBK64N250
64N250
IXBX 64N250
PLUS247
128a
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26N120P
Abstract: 26n120 IXFN26N120P
Text: IXFN26N120P PolarTM Power MOSFET HiPerFETTM VDSS ID25 = = ≤ ≤ RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode 1200V 23A Ω 460mΩ 300ns miniBLOC, SOT-227 B (IXFN) E153432 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C
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IXFN26N120P
300ns
OT-227
E153432
26N120P
3-28-08-B
26n120
IXFN26N120P
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2R4N120P
Abstract: IXTA2R4N120P IXTH2R4N120P
Text: Polar TM Power MOSFET IXTA2R4N120P IXTH2R4N120P IXTP2R4N120P VDSS ID25 = 1200V = 2.4A ≤ 7.5Ω Ω RDS on N-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) G S (TAB) TO-220 (IXTP) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1200
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IXTA2R4N120P
IXTH2R4N120P
IXTP2R4N120P
O-263
O-220
2R4N120P
2-08-A
IXTA2R4N120P
IXTH2R4N120P
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IXFX30N110P
Abstract: PLUS247 ixfk 30N110P
Text: IXFK30N110P IXFX30N110P PolarTM Power MOSFET HiPerFETTM VDSS ID25 = = 1100V 30A Ω 360mΩ 300ns RDS on ≤ ≤ trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-264 (IXFK) Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C
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IXFK30N110P
IXFX30N110P
300ns
O-264
30N110P
4-01-08-A
IXFX30N110P
PLUS247
ixfk 30N110P
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