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    IXYS Corporation IXFX30N110P

    MOSFET N-CH 1100V 30A PLUS247-3
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    IXFX30N110P Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IXFX30N110P IXYS FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 1100V 30A PLUS247 Original PDF

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    IXFX30N110P

    Abstract: PLUS247 ixfk 30N110P
    Text: IXFK30N110P IXFX30N110P PolarTM Power MOSFET HiPerFETTM VDSS ID25 = = 1100V 30A Ω 360mΩ 300ns RDS on ≤ ≤ trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-264 (IXFK) Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C


    Original     		IXFK30N110P IXFX30N110P 300ns O-264 30N110P 4-01-08-A IXFX30N110P PLUS247 ixfk 30N110P PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Technical Information PolarTM Power MOSFET HiPerFETTM IXFK30N110P IXFX30N110P VDSS ID25 = = 1100V 30A Ω 360mΩ 300ns RDS on ≤ ≤ trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-264 (IXFK) Symbol Test Conditions Maximum Ratings


    Original     		IXFK30N110P IXFX30N110P 300ns O-264 30N110P PDF

    Z 728

    Abstract: No abstract text available
    Text: OBSOLETE IXFK30N110P IXFX30N110P PolarTM HiPerFETTM Power MOSFET VDSS ID25 = = 1100V 30A Ω 360mΩ 300ns RDS on ≤ ≤ trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-264 (IXFK) Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C


    Original     		IXFK30N110P IXFX30N110P O-264 30N110P 4-01-08-A Z 728 PDF