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    Untitled

    Abstract: No abstract text available
    Text: DMN2016LHAB DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Features V BR DSS RDS(on)max 20V 15.5mΩ @ VGS = 4.5V 16.5mΩ @ VGS = 4.0V 19mΩ @ VGS = 3.1V 20mΩ @ VGS = 2.5V 30mΩ @ VGS = 1.8V ID TA = +25°C 7.5A 7.3A 6.9A 6.7A 5.4A • Low On-Resistance • Low Gate Threshold Voltage


    Original     		DMN2016LHAB DS36133 PDF

    DMN2016LHAB

    Abstract: No abstract text available
    Text: DMN2016LHAB DUAL N-CHANNEL ENHANCEMENT MODE MOSFET V BR DSS RDS(on)max 20V 15.5m @ VGS = 4.5V 16.5m @ VGS = 4.0V 19m @ VGS = 3.1V 20m @ VGS = 2.5V 30m @ VGS = 1.8V Features ID TA = +25°C 7.5A 7.3A 6.9A 6.7A 5.4A • Low On-Resistance  Low Gate Threshold Voltage


    Original     		DMN2016LHAB DS36133 DMN2016LHAB PDF