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    Untitled

    Abstract: No abstract text available
    Text: DMP210DUFB4 P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits V BR DSS RDS(on) -20V 5 @ VGS = -4.5V 7 @ VGS = -2.5V 10 @ VGS = -1.8V 15 @ VGS = -1.5V ID TA = +25°C -200mA -170mA -140mA -50mA Description This new generation MOSFET has been designed to minimize the onstate resistance (RDS(ON) and yet maintain superior switching


    Original     		PDF DMP210DUFB4 -200mA -170mA -140mA -50mA AEC-Q101 DS35026

    Untitled

    Abstract: No abstract text available
    Text: DMP210DUFB4 P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits V BR DSS RDS(on) -20V 5Ω @ VGS = -4.5V 7Ω @ VGS = -2.5V 10Ω @ VGS = -1.8V 15Ω @ VGS = -1.5V ID TA = +25°C -200mA -170mA -140mA -50mA Description This new generation MOSFET has been designed to minimize the onstate resistance (RDS(ON) and yet maintain superior switching


    Original     		PDF DMP210DUFB4 -200mA -170mA -140mA -50mA DS35026

    DN1G

    Abstract: No abstract text available
    Text: DMP210DUFB4 P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS Features and Benefits • • ID RDS(on) P-Channel MOSFET Low On-Resistance • 5.5Ω @ -4.5V • 7.5Ω @ -2.5V • 11.5Ω @ -1.8V • 17.5Ω @ -1.5V Very Low Gate Threshold Voltage VGS(TH), 1.15V max


    Original     		PDF DMP210DUFB4 -200mA -140mA AEC-Q101 DS35026 DN1G

    DMP210DUFB4

    Abstract: No abstract text available
    Text: DMP210DUFB4 P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS Features and Benefits RDS(on) • • ID P-Channel MOSFET Low On-Resistance • 5.5Ω @ -4.5V • 7.5Ω @ -2.5V • 11.5Ω @ -1.8V • 17.5Ω @ -1.5V Very Low Gate Threshold Voltage VGS(TH), 1.15V max


    Original     		PDF DMP210DUFB4 -200mA -140mA AEC-Q101 DS35026 DMP210DUFB4

    Untitled

    Abstract: No abstract text available
    Text: DMP210DUFB4 P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS Features and Benefits • • ID RDS(on) P-Channel MOSFET Low On-Resistance • 5.5Ω @ -4.5V • 7.5Ω @ -2.5V • 11.5Ω @ -1.8V • 17.5Ω @ -1.5V Very Low Gate Threshold Voltage VGS(TH), 1.15V max


    Original     		PDF DMP210DUFB4 -200mA -140mA AEC-Q101 DS35026

    Untitled

    Abstract: No abstract text available
    Text: DMP210DUFB4 P-CHANNEL ENHANCEMENT MODE MOSFET Features and Benefits Product Summary V BR DSS • • ID RDS(on) P-Channel MOSFET Low On-Resistance • 5.5Ω @ -4.5V • 7.5Ω @ -2.5V • 11.5Ω @ -1.8V • 17.5Ω @ -1.5V Very Low Gate Threshold Voltage VGS(TH), 1.15V max


    Original     		PDF DMP210DUFB4 AEC-Q101 -200mA -140mA DS35026