Untitled
Abstract: No abstract text available
Text: DMN3051L N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary RDS ON ID TA = 25°C 38mΩ @ VGS = -10V 5.8A 64mΩ @ VGS = -4.5V 4.5A V(BR)DSS • • • • • • • • 30V Description and Applications • • This new generation MOSFET has been designed to minimize the
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DMN3051L
AEC-Q101
DS31347
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Untitled
Abstract: No abstract text available
Text: DMN3051L N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits RDS ON ID TA = 25°C 38mΩ @ VGS = -10V 5.8A 64mΩ @ VGS = -4.5V 4.5A V(BR)DSS • • • • • • • • Description and Applications Mechanical Data • • This new generation MOSFET has been designed to minimize the
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DMN3051L
DS31347
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DMN3051L
Abstract: J-STD-020D
Text: DMN3051L N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Please click here to visit our online spice models database. Features NEW PRODUCT • • • • • • • • Mechanical Data • • Low On-Resistance: RDS ON < 38mΩ @ VGS = 10V, ID = 5.8A
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DMN3051L
AEC-Q101
OT-23
J-STD-020D
DS31347
DMN3051L
J-STD-020D
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Untitled
Abstract: No abstract text available
Text: DMN3051L N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary RDS ON ID TA = +25°C • Low On-Resistance Low Gate Threshold Voltage 38mΩ @ VGS = -10V 5.8A Low Input Capacitance 4.5A Fast Switching Speed V(BR)DSS 64mΩ @ VGS = -4.5V Low Input/Output Leakage
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DMN3051L
AEC-Q101
DS31347
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