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IXGP24N60C4D1 Abstract: IC110 Text: Preliminary Technical Information High-Gain IGBT w/ Diode IXGP24N60C4D1 VCES IC110 VCE sat tfi(typ) High-Speed PT Trench IGBT = = ≤ = 600V 24A 2.70V 44ns TO-220 Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ	Original	PDF	IXGP24N60C4D1 IC110 O-220 IF110 338B2 IXGP24N60C4D1
54AC00 Abstract: 54ACT00 AC00 act00 Text: 54AC00 • 54ACT00 Quad 2-Input NAND Gate General Description The ’AC/’ACT00 contains four 2-input NAND gates. Features n Outputs source/sink 24 mA n ’ACT00 has TTL-compatible inputs n Standard Microcircuit Drawing SMD — ’AC00: 5962-87549 — ’ACT00: 5962-87699	Original	PDF	54AC00 54ACT00 ACT00 ACT00: DS100257-3 DS100257-1 DS100257-2 DS100257 54AC00 54ACT00 AC00
IXGP24N60C4D1 Abstract: IF110 IXGP24N60C ups 017 Text: Advance Technical Information High-Gain IGBT w/ Diode IXGP24N60C4D1 VCES IC110 VCE sat tfi(typ) High-Speed PT Trench IGBT = = ≤ = 600V 24A 2.70V 44ns TO-220 Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ	Original	PDF	IXGP24N60C4D1 IC110 O-220 IF110 338B2 IXGP24N60C4D1 IF110 IXGP24N60C ups 017
54ACT00 Abstract: 54AC00 54ACT 74AC AC00 Text: 54AC00/54ACT00 Quad 2-Input NAND Gate General Description The ’AC/’ACT00 contains four 2-input NAND gates. Features n Standard Microcircuit Drawing SMD — ’AC00: 5962-87549 — ’ACT00: 5962-87699 n 54AC00 now qualified to 300Krad RHA designation,	Original	PDF	54AC00/54ACT00 ACT00 ACT00: 54AC00 300Krad DS100257 54ACT00 54ACT 74AC AC00
54AC00 Abstract: 54ACT00 AC00 Text: 54AC00 • 54ACT00 Quad 2-Input NAND Gate General Description The ’AC/’ACT00 contains four 2-input NAND gates. Features n Outputs source/sink 24 mA n ’ACT00 has TTL-compatible inputs n Standard Microcircuit Drawing SMD — ’AC00: 5962-87549 — ’ACT00: 5962-87699	Original	PDF	54AC00 54ACT00 ACT00 ACT00: DS100257-3 DS100257-1 DS100257-2 DS100257 54AC00 54ACT00 AC00
Untitled Abstract: No abstract text available Text: Preliminary Technical Information High-Gain IGBT w/ Diode VCES IC110 VCE sat tfi(typ) IXGP24N60C4D1 High-Speed PT Trench IGBT = = ≤ = 600V 24A 2.70V 44ns TO-220 Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ	Original	PDF	IC110 IXGP24N60C4D1 O-220 IF110 11ective 338B2