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Catalog Datasheet	MFG & Type	PDF	Document Tags
DS00107 Abstract: ic1a polysilicon resistor High Speed Amplifiers IC 1A Text: HJW Complementary Bipolar Process Data Sheet DS00107 / June 2010 HJW is a high voltage version of the RF-HJ double polysilicon trench isolated complementary bipolar process with high Bvebo > 4.5 V, suitable for very high linearity applications. Key parameters minimum geometry device	Original	PDF	DS00107 ic1a polysilicon resistor High Speed Amplifiers IC 1A
polysilicon resistor Abstract: High Speed Amplifiers Complementary Bipolar Process vertical PNP DS00107 Text: HJV Complementary Bipolar Process Data Sheet DS00107 / June 2010 HJV is a high voltage version of the RF- HJ double polysilicon trench isolated complementary bipolar process, optimized for very high linearity applications. Key parameters minimum geometry device	Original	PDF	DS00107 polysilicon resistor High Speed Amplifiers Complementary Bipolar Process vertical PNP
2417K4A Abstract: EIA-625 GR-253-CORE Text: Data Sheet, Rev. 1 August 2001 NetLight 2417K4A 1300 nm Laser 2.5 Gbits/s Transceiver • TTL signal-detect output ■ Low power dissipation ■ Single 3.3 V power supply ■ LVPECL/CML compatible data inputs and CML compatible data outputs ■ ■ Operating temperature range: 0 °C to	Original	PDF	2417K4A RJ-45 OC-48, f3201 DS00-107OPTO-1 DS00-107OPTO) EIA-625 GR-253-CORE
2417K4A Abstract: EIA-625 Text: Advance Data Sheet January 2000 NetLight 2417K4A 1300 nm Laser 2.5 Gbits/s Transceiver • Low power dissipation ■ Single 3.3 V power supply ■ LVPECL/CML compatible data inputs and CML compatible data outputs ■ ■ Operating temperature range: 0 °C to	Original	PDF	2417K4A RJ-45 OC-48, 10-pin DS00-107OPTO EIA-625