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    Eaton Electronics MDQ-15 (ALTERNATE: MDQ-15)

    BUSS SMALL DIMENSION FUSE | Eaton Electronics MDQ-15
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    RS MDQ-15 (ALTERNATE: MDQ-15) Bulk 11 Weeks 5
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    • 10 $13.6
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    Siemens 8PG11141DQ15 (ALTERNATE: 8PG11141DQ15)

    125AT,20X72 FCB Section,480V,65kA,800A H ; 8PG11141DQ15 | Siemens 8PG11141DQ15
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    RS 8PG11141DQ15 (ALTERNATE: 8PG11141DQ15) Bulk 2 Weeks 1
    • 1 $13613.94
    • 10 $12933.24
    • 100 $12933.24
    • 1000 $12933.24
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    DQ15A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    M29W320DT

    Abstract: M29W320D M29W320DB TFBGA48
    Text: M29W320DT M29W320DB 32 Mbit 4Mb x8 or 2Mb x16, Boot Block 3V Supply Flash Memory FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VCC = 2.7V to 3.6V for Program, Erase and Read – VPP =12V for Fast Program (optional) ■ ACCESS TIME: 70, 90ns


    Original     		PDF M29W320DT M29W320DB TSOP48 TFBGA63 TFBGA48 M29W320DT M29W320D M29W320DB TFBGA48

    Untitled

    Abstract: No abstract text available
    Text: S29NS-R MirrorBit Flash Family S29NS01GR, S29NS512R, S29NS256R, S29NS128R 1024/512/256/128 Mb 64/32/16/8 M x 16 bit 1.8 V Burst Simultaneous Read/Write, Multiplexed MirrorBit Flash Memory S29NS-R MirrorBit® Flash Family Cover Sheet Data Sheet (Retired Product)


    Original     		PDF S29NS-R S29NS01GR, S29NS512R, S29NS256R, S29NS128R S29NS512P S29NS512R. S29VS256R S29VS128R

    M29W400B

    Abstract: FBGA48 M29W400 M29W400BB M29W400BT M29W400T
    Text: M29W400T M29W400B 4 Mbit 512Kb x8 or 256Kb x16, Boot Block Low Voltage Single Supply Flash Memory NOT FOR NEW DESIGN M29W400T and M29W400B are replaced respectively by the M29W400BT and M29W400BB 2.7V to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS


    Original     		PDF M29W400T M29W400B 512Kb 256Kb M29W400T M29W400B M29W400BT M29W400BB FBGA48 M29W400 M29W400BB

    JESD97

    Abstract: M29F400 M29F400B M29F400BB M29F400BT
    Text: M29F400BT M29F400BB 4 Mbit 512Kb x8 or 256Kb x16, Boot Block single supply Flash memory Feature summary • Single 5 V ± 10% supply voltage for program, erase and read operations ■ Access time: 45 ns ■ Programming time – 8 µs per Byte/Word typical


    Original     		PDF M29F400BT M29F400BB 512Kb 256Kb JESD97 M29F400 M29F400B M29F400BB M29F400BT

    M29F800D

    Abstract: M29F800DB M29F800DT
    Text: M29F800DT M29F800DB 8 Mbit 1Mb x8 or 512Kb x16, Boot Block 5V Supply Flash Memory FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VCC = 5V ±10% for Program, Erase and Read ■ ACCESS TIME: 55, 70, 90ns ■ PROGRAMMING TIME – 10µs per Byte/Word typical


    Original     		PDF M29F800DT M29F800DB 512Kb TSOP48 M29F800D M29F800DB M29F800DT

    M29DW323D

    Abstract: TSOP48 outline M29DW323DB M29DW323DT M29DW324D M29DW324DB M29DW324DT
    Text: M29DW324DT M29DW324DB 32 Mbit 4Mb x8 or 2Mb x16, Dual Bank, Boot Block 3V Supply Flash Memory PRELIMINARY DATA FEATURES SUMMARY • SUPPLY VOLTAGE – VCC = 2.7V to 3.6V for Program, Erase and Read ■ – VPP =12V for Fast Program (optional) ACCESS TIME: 70, 90ns


    Original     		PDF M29DW324DT M29DW324DB TSOP48 M29DW323D TSOP48 outline M29DW323DB M29DW323DT M29DW324D M29DW324DB M29DW324DT

    M29W640DB

    Abstract: M29W640D M29W640DT A0-A21 6A000
    Text: M29W640DT M29W640DB 64 Mbit 8Mb x8 or 4Mb x16, Boot Block 3V Supply Flash Memory PRELIMINARY DATA FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VCC = 2.7V to 3.6V for Program, Erase, Read – VPP =12 V for Fast Program (optional) ■ ACCESS TIME: 70, 90 ns


    Original     		PDF M29W640DT M29W640DB TSOP48 TFBGA63 M29W640DB M29W640D M29W640DT A0-A21 6A000

    A17a

    Abstract: A21A A18A MCP market MB84VY6A4A1 MB84VZ128A 92PIN CE-2Ra internal block diagram of mobile phone A22A
    Text: New Products MB84VY6A4A1 2-Bus Type PS-MCP Mounted with 6 Memory Chips MB84VY6A4A1 The world first PS-MCP ＿ Package ＿ Stacked M CP with a 2-bus configuration, ＿ mounted with 4 memory chips for a cellular phone application block and 2 memory chips for a baseband block. MB84VY6A4A1 is configured with 328M bits


    Original     		PDF MB84VY6A4A1 MB84VY6A4A1 40REF 80REF A17a A21A A18A MCP market MB84VZ128A 92PIN CE-2Ra internal block diagram of mobile phone A22A

    W764M32V1-XBX

    Abstract: No abstract text available
    Text: W764M32V1-XBX *PRELIMINARY 64Mx32 NOR Flash Multi-Chip Package 3V Page Mode Memory FEATURES GENERAL DESCRIPTION  Single power supply operation The W764M32V1-XBX device is a 3V single power flash memory. The device utilizes two chips organized as 67,108,864 words. The


    Original     		PDF W764M32V1-XBX 64Mx32 W764M32V1-XBX 32-bit 16-bit 1024-byte prx32

    Untitled

    Abstract: No abstract text available
    Text: M29F200BT M29F200BB 2 Mbit 256Kb x8 or 128Kb x16, Boot Block Single Supply Flash Memory • SINGLE 5V±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ ACCESS TIME: 45ns ■ PROGRAMMING TIME – 8µs per Byte/Word typical ■ 44 7 MEMORY BLOCKS


    Original     		PDF M29F200BT M29F200BB 256Kb 128Kb TSOP48

    555 NC timer

    Abstract: No abstract text available
    Text: M29F100BT M29F100BB 1 Mbit 128Kb x8 or 64Kb x16, Boot Block Single Supply Flash Memory • SINGLE 5V±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ ACCESS TIME: 45ns ■ PROGRAMMING TIME – 8µs per Byte/Word typical ■ 44 5 MEMORY BLOCKS


    Original     		PDF M29F100BT M29F100BB 128Kb TSOP48 555 NC timer

    Untitled

    Abstract: No abstract text available
    Text: M29W400BT M29W400BB 4 Mbit 512Kb x8 or 256Kb x16, Boot Block Low Voltage Single Supply Flash Memory PRELIMINARY DATA • SINGLE 2.7 to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ ACCESS TIME: 55ns ■ PROGRAMMING TIME – 10µs per Byte/Word typical


    Original     		PDF M29W400BT M29W400BB 512Kb 256Kb TSOP48

    ba1030

    Abstract: M29W200BB
    Text: M29W200BT M29W200BB 2 Mbit 256Kb x8 or 128Kb x16, Boot Block Low Voltage Single Supply Flash Memory PRELIMINARY DATA • SINGLE 2.7 to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ ACCESS TIME: 55ns ■ PROGRAMMING TIME – 10µs per Byte/Word typical


    Original     		PDF M29W200BT M29W200BB 256Kb 128Kb TSOP48 ba1030 M29W200BB

    Untitled

    Abstract: No abstract text available
    Text: M29W160ET M29W160EB 16 Mbit 2Mb x8 or 1Mb x16, Boot Block 3V Supply Flash Memory FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VCC = 2.7V to 3.6V for Program, Erase and Read ■ ACCESS TIME: 70, 90ns ■ PROGRAMMING TIME – 10µs per Byte/Word typical


    Original     		PDF M29W160ET M29W160EB TSOP48

    VOGT n3 503 20 010 50

    Abstract: No abstract text available
    Text: HFC - S active ISDN Microprocessor ARM7 based Preliminary Data Sheet: July 2002 Copyright 1994 - 2002 Cologne Chip AG All Rights Reserved The information presented can not be considered as assured characteristics. Data can change without notice. Parts of the information presented may be protected by patent or other rights.


    Original     		PDF

    S29GL128S

    Abstract: S29GL512S S29GL01GS GL512S S29GL256S GL256S s29gl128s10tfiyyx JESD68-01 GL01GS S29GL01GS11
    Text: GL-S MirrorBit Eclipse Flash Non-Volatile Memory Family S29GL01GS S29GL512S S29GL256S S29GL128S 1 Gbit 512 Mbit 256 Mbit 128 Mbit 128 Mbyte (64 Mbyte) (32 Mbyte) (16 Mbyte) GL-S MirrorBit® Family Cover Sheet CMOS 3.0 Volt Core with Versatile I/O Data Sheet


    Original     		PDF S29GL01GS S29GL512S S29GL256S S29GL128S S29GL128S GL512S GL256S s29gl128s10tfiyyx JESD68-01 GL01GS S29GL01GS11

    JESD97

    Abstract: M29DW128F TSOP56 6C80
    Text: M29DW128F 128 Mbit 16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block 3V supply Flash memory Feature summary • Supply voltage – VCC = 2.7V to 3.6V for Program, Erase and Read – VPP =12V for Fast Program (optional) ■ Asynchronous Random/Page Read


    Original     		PDF M29DW128F TSOP56 32-Word 16Mbit 48Mbit 16Mbit TBGA64 JESD97 M29DW128F TSOP56 6C80

    M29W128FL

    Abstract: Memory Protection Devices M29W128FH JESD97 M29W128F TSOP56
    Text: M29W128FH M29W128FL 128 Mbit 8Mb x 16 or 16Mb x 8, Page, Uniform Block 3V Supply Flash Memory Feature summary • Supply voltage – VCC = 2.7 to 3.6V for Program, Erase and Read – VPP =12V for Fast Program (optional) ■ Asynchronous Random/Page Read


    Original     		PDF M29W128FH M29W128FL Words/16 TSOP56 32-Word 64-Bytes) M29W128FL Memory Protection Devices M29W128FH JESD97 M29W128F TSOP56

    Q002

    Abstract: M29W800FT TFBGA48 TSOP48 outline m29w800f
    Text: M29W800FT M29W800FB 8 Mbit 1 Mb x8 or 512 Kb ×16, Boot Block 3 V supply Flash memory Preliminary Data Features • Supply voltage – VCC = 2.7 V to 3.6 V for Program, Erase and Read ■ Access time: 70 ns ■ Programming time – 10 µs per Byte/Word typical


    Original     		PDF M29W800FT M29W800FB 64-bit Q002 M29W800FT TFBGA48 TSOP48 outline m29w800f

    ST M29W800DT

    Abstract: M29W800D M29W800DB M29W800DT TFBGA48
    Text: M29W800DT M29W800DB 8 Mbit 1Mb x8 or 512Kb x16, Boot Block 3V Supply Flash Memory Features • Supply voltage – VCC = 2.7V to 3.6V for Program, Erase and Read ■ Access times: 45, 70, 90ns ■ Programming time – 10µs per Byte/Word typical ■ 19 memory blocks


    Original     		PDF M29W800DT M29W800DB 512Kb 64-and ST M29W800DT M29W800D M29W800DB M29W800DT TFBGA48

    M29F016D

    Abstract: No abstract text available
    Text: M29F016D 16 Mbit 2Mb x8, Uniform Block 5V Supply Flash Memory PRELIMINARY DATA FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VCC = 5V ±10% for PROGRAM, ERASE and READ OPERATIONS ■ ACCESS TIME: 55, 70, 90ns ■ PROGRAMMING TIME – 10µs per Byte typical


    Original     		PDF M29F016D 64Kbyte TSOP40 M29F016D

    M29W017D

    Abstract: TFBGA48
    Text: M29W017D 16 Mbit 2Mb x8, Uniform Block 3V Supply Flash Memory PRELIMINARY DATA FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VCC = 2.7V to 3.6V for Program, Erase and Read ■ ACCESS TIME: 70, 90ns ■ PROGRAMMING TIME – 10µs per Byte typical


    Original     		PDF M29W017D TSOP40 TFBGA48 M29W017D TFBGA48

    Untitled

    Abstract: No abstract text available
    Text: A O m r c i ! O M F O K fifflÄ T T O O K I in te l A28F200BR-T/B 2-MBIT 128K x 1 6 ,256K x 8 SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY Automotive Intel SmartVoltage Technology — 5V or 12V Program/Erase — 5V Read Operation Very High Performance Read


    OCR Scan     		PDF A28F200BR-T/B x8/x16-Selectable 32-bit AB28F200BR-B80 AP-363 28F002/200BX-T/B 28F002/200BL-T/B 28F004/400BL-T/B 28F004/400BX-T/B AB-57

    intel ab28f200 flash

    Abstract: AB28F200 AB28F intel ab28F200
    Text: ADVANCE INFORMATION A28F200BR-T/B 2-MBIT 128K X 16, 256K X 8 SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY Automotive • Intel SmartVoltage Technology — 5V o r 12V Program/Erase — 5V Read Operation ■ Very High Perform ance Read — 80 ns Max. Access Time,


    OCR Scan     		PDF A28F200BR-T/B x8/x16-Selectable 32-bit 16-KB 96-KB 128-KB 28F002/200B 8F002/200B 8F004/400B 28F004/400B intel ab28f200 flash AB28F200 AB28F intel ab28F200