intel nand flash
Abstract: HBM 00-07H pf29f32 nand flash ONFI 3.0 DQ04-1 intel nand flash decoder 3185* Intel intel nand flash memory Z-P140 16GB Nand flash dual channel
Text: Intel Z-P140 PATA Solid State Drive SSDPAPS0002G1, SSDPAPS0004G1 Preliminary Datasheet Product Features Capacities — 2 GB extensible to 8 GB using Intel SD54B NAND Flash Memory components — 4 GB (extensible to 16 GB using Intel SD58B NAND Flash Memory components)
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Z-P140
SSDPAPS0002G1,
SSDPAPS0004G1
SD54B
SD58B
318890-001US
intel nand flash
HBM 00-07H
pf29f32
nand flash ONFI 3.0
DQ04-1
intel nand flash decoder
3185* Intel
intel nand flash memory
16GB Nand flash dual channel
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SSDPAPS0004G1
Abstract: HBM 00-07H intel nand flash pf29f32 SSDPAPS0002G1 317505-003US ssd schematic 16GB Nand flash dual channel intel nand flash memory PF29
Text: Intel Z-P140 PATA Solid State Drive SSDPAPS0002G1, SSDPAPS0004G1 Product Manual Product Features Capacities — 2 GB extensible to 4 GB using Intel SD54B NAND Flash Memory components — 4 GB (extensible to 16 GB using Intel SD58B NAND Flash Memory components)
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Z-P140
SSDPAPS0002G1,
SSDPAPS0004G1
SD54B
SD58B
318890-003US
SSDPAPS0004G1
HBM 00-07H
intel nand flash
pf29f32
SSDPAPS0002G1
317505-003US
ssd schematic
16GB Nand flash dual channel
intel nand flash memory
PF29
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20L-28L
Abstract: ALL LAPTOP MOTHERBOARD CIRCUIT DIAGRAM
Text: INTEGRATE] CIRCUIT SbE D • U&2 5 7 5 & DQ003 02 DOB m i G S ICS2628 Integrated Circuit Systems, Inc. Advance Information 3 Volt Motherboard Frequency Generator 'T - z o - z y Features Description • • Operates from a single 3V to 5V supply Two standard parts, ICS2628-022 and ICS2628-034
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DQ003
ICS2628
ICS2628-022
ICS2628-034
4flS57Sfl
015x45
20L-28L
ALL LAPTOP MOTHERBOARD CIRCUIT DIAGRAM
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100DG
Abstract: 100DJ 100AB 100AC 100BA 100BB 100BC 100CA 100CB 100CC
Text: OA K / n C COY ELEK-. OV E N A I M5E D b75ô510 DQ00374 13T • OKPI -5 V JC C O Y TCXO's 100 Series, .2 to 25 MHz, TTL or HCMOS |K*: ' f The 100 sériés is designed for.+5VDC, TTL3 r or HCMOS applications requiring a space „ if,saving enclosure and- moderate s ta b ilitie s ^
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DQ00374
54jntt
100DG
100DJ
100AB
100AC
100BA
100BB
100BC
100CA
100CB
100CC
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Untitled
Abstract: No abstract text available
Text: M IC R O N E T IC S 3 ME IN C I a l l l 7 1+2 DQ0033b 2 D r r ^ s v x i IMRO | APPR I CHANGE REV DATE K F e ~a t o t s .e s • U S E F U L F O E . V e R X H-IS-h «ÏCOITCHltOG- IfcATETS- Of» TO 2 0 MHS • O F=f=eE S C H o i c e O F UOS4C. ¿ O O C I O . I
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DQ0033b
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S15R6
Abstract: s14r6
Text: CONNOR-lilINFIELD MbE » CORP m S3MBM31 DQ003ÔS 7 « C N N T-50-23 - A u r o r a , I L. 6 0 5 0 5 C O N N O R -W IN FIELD C O R P O R A T IO N PHONE 708 85 1 - 4 7 2 2 . FAX (708) 8 5 1 - 5 0 4 0 CABLE: CONWINWCGO OSCILLATORS r CRYSTAL CONTROLLED DIP TTL
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S3MBM31
DQ003Ã
T-50-23
S14R6
S15R6
S14R6
S15R6
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Untitled
Abstract: No abstract text available
Text: ELECTRONIC CONCEPTS INC 3^E D 32E57QM DQ0032S 0 IECN \-a s ~ n - o s high voltage metallized polyester capacitors type 4ME12 w rap and fill tubular construction Type 4ME12 is a versatile metallized polyester capacitor that is produced in a wrap and fill, tubular configuration with axial wire leads. Its
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32E57QM
DQ0032S
4ME12
4ME12
710-722-6661//Wa//
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686 6K tantalum
Abstract: capacitor 684k MATSUO 281 202L3502
Text: m r SOLID-ELECTROLYTE TANTALUM CAPACITORS* MATSUO A CAUTIONS •This capacitor is polarized, do not apply reverse voltage. •The sum of peak value of AC and DC voltage should not exceed the rated voltage. ■This catalog is designed for providing general information. Please
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22jjF.
GG0G341
686 6K tantalum
capacitor 684k
MATSUO 281
202L3502
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STK10C48
Abstract: No abstract text available
Text: S I MT EK CORP böE D 0274607 □□□□333 EST ISIK STK10C48 SIÎÏ1TEH CMOS nvSRAM High Performance 2K x 8 Nonvolatile Static RAM FEATURES 30,35 and 45ns Access Times 15,20 and 25ns Output Enable Access Unlimited Read and Write to SRAM Hardware s t o r e Initiation
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STK10C48
STK10C48
E74flfl7
0DDD340
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.47j 63v
Abstract: No abstract text available
Text: THOMSON COMPONENTS THOMSON PASSIVE MbE D • TD263DS DD0037b T ■ THP TYPE AC / AN MULTILAYER CERAMIC CHIP CAPACITORS /?-PF~û5-& 7 PHYSICAL C H A R A C TER ISTIC S TERM INATIO N Standard: Silver palladium metallization. Can meet reflow solder specifications for 5 sec. @ 260°C.
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TD263DS
DD0037b
-220pF
.47j 63v
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IS28F010
Abstract: IS28F010-45PL
Text: ISSI I S 2 8 F 0 1 0 131,072 x 8 CMOS FLASH MEMORY p r e l im in a r y NOVEMBER 1995 FEATURES • Flash electrica l bu lk chip-e ra se - O ne seco nd typica l chip-e ra se • C M O S low p o w e r con sum p tion - 30 m A m axim um active curre nt - 1 0 0 |iA m axim um sta n d b y curre nt
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IS28F01Q
32-pin
IS28F010-120PL
IS28F010-120T
IS28F010-45WI
600-mil
IS28F010-45PLI
IS28F010-45TI
IS28F010
IS28F010-45PL
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Untitled
Abstract: No abstract text available
Text: I n t e r n a t io n a l S e m ic o n d u c t o r , I n c . E R 1A thru E R IE SURFACE MOUNT SUPER FAST RECOVERY RECTIFIER CURRENT - 1.0 Ampere T ± c FEA TU R ES • For su rface mount applications M EC H A N IC A L DATA ■ High tem perature m etallurgically
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IL-S-19500
TD0G37Ö
DQ003SS
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Untitled
Abstract: No abstract text available
Text: ISSI I S 2 8 F 0 1 0 _ 131,072 x 8 CMOS FLASH MEMORY PRELIMINARY NOVEMBER 1995 FEATURES • Flash electrica l bu lk chip-e ra se - O ne seco nd typica l chip-e ra se H igh pe rfo rm an ce - 45 ns m axim um access tim e • C M O S low p o w e r con sum p tion
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32-pin
IS28F010-45WI
IS28F010-45PLI
IS28F010-45TI
600-mll
IS28F010-70WI
IS28F010-70PLI
IS28F010-70TI
600-mil
IS28F010-90WI
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Untitled
Abstract: No abstract text available
Text: böE D SINTEK CORP • ÖE74flfl7 00D03S0 33Ö H S I K STK10C68-M CMOS nvSRAM High Performance 8K x 8 Nonvolatile Static RAM MIL-STD-833/SMD 5962 - 93056 SIIÏITEK FEATURES DESCRIPTION 3 0 ,3 5 ,4 5 and 55ns A c c e s s Tim es 1 5 ,2 0 and 25ns O u tp u t E nable A cce ss
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E74flfl7
00D03S0
STK10C68-M
MIL-STD-833/SMD
STK10C68-M
STK10C68
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marking code P1F
Abstract: qs-002b MARKING P1F M41256HPM12 M41256HPM15 m325
Text: 82D 0 0 3 5 6 ' M 4 1 2 5 6 H x M 1 2 J & ÌB p y n à m c m A M D •7z & ’3 & - / 5 ' m iìta r p FEATURES v • Military Temperature Ranges -55°C to +110°C • ±10% Power Supply Tolerance • Full Compliance to MIL-STD-883C • Read-Modify-Write Capabilities
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M41256HxM12J&
MIL-STD-883C
M41256HxMl2
16-Pin
00G0373
M41256HxM12
M41256HPM12
M41256HPM15
M41256HNM12
M41256HNM15
marking code P1F
qs-002b
MARKING P1F
M41256HPM15
m325
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tx 429d
Abstract: No abstract text available
Text: HI-8282 ARINC 429 SERIAL TRANSMITTER AND DUAL RECEIVER General Description Applications The HI-8282 is a silicon gate CMOS device for interfacing the ARINC 429 serial data bus to a 16-bit parallel data bus. Two receivers and an independent transmitter are provided. The receiver
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HI-8282
HI-8282
16-bit
HI-8282C
HI-8282S
HI-8282CM
HI-8282SM
tx 429d
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Untitled
Abstract: No abstract text available
Text: twnrj«¥« € g M i w i i pnH _ EPM 6I2FJ-S/M Pigtailed 1.3 urn Passband Detector M odule Prelim inary Specifications Features • High responsivity at 1300 nm ■ 1550 nm response - 20 dB of 1300 nm response
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33bDMDb
DQ00323
EPM61ZFJ-S/M
33b040b
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Matsuo 204
Abstract: No abstract text available
Text: m * SOLID-ELECTROLYTE TANTALUM CAPACITORS MATSUO A type cautions •This capacitor is polarized, do not apply reverse voltage. •The sum of peak value of AC and DC voltage should not exceed the rated voltage. •This catalog is designed for providing general information. Please
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/1000h
22jjF.
DQGG341
Matsuo 204
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16V 100 MF
Abstract: G23-76 Matsuo KAB fuse
Text: m MATSUO SOLID-ELECTROLYTE TANTALUM CAPACITORS A CAUTIONS •This capacitor is polarized, do not apply reverse voltage. •The sum of peak value of AC and DC voltage should not exceed the rated voltage. •This catalog is designed for providing general information. Please
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/1000h
22jjF.
DQGG341
16V 100 MF
G23-76
Matsuo KAB fuse
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oti 64105
Abstract: oti-088
Text: OAK TECHNOLOGY Multimedia Solutions in Silicon SPITFIRE 64-bit Multimedia GUI Accelerator OTI-64107/64105 Preliminary Specification September 1994 Oak Technology, Inc. • 139 Kifer Court • Sunnyvale, CA 94086 *Phone 408 737-0888 • FAX (408) 737-3838
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64-bit
OTI-64107/64105
QD00311
b72T4a5
oti 64105
oti-088
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Untitled
Abstract: No abstract text available
Text: H ig h P e r f o r m a n c e •■ AS29F200 II 256KX8/128x I6 SV CM OS Flash FFPROM 2 M e g a b it 5V CM OS Flash EEPROM Preliminary information Features • O r g a n iz a tio n : 2 S 6 K x 8 o r 1 2 8 K x l 6 • L o w p o w e r c o n s u m p ti o n - 35 mA m a x im u m read c u rre n t
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AS29F200
256KX8/128x
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