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    DIODE MARKING W4 Search Results

    DIODE MARKING W4 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    DIODE MARKING W4 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    SOD-323 smd code UM

    Abstract: Diode SOD-323 smd code UM 18 w4 DIODE diode marking code W4 smd diode UM 08 CODE W4 diode MARKING CODE RP SMD Switching diode SOD323 DIODE marking W4 diode marking code W4 SOD-323
    Text: BA592ST SILICON RF SWITCHING DIODE PINNING FEATURES ● Very low forward resistance PIN typ.0.45Ω@3mA ● Small capacitance APPLICATIONS ˙ For band switching in TV/VTR tuners and mobile applications DESCRIPTION 1 Cathode 2 Anode 1 W4 2 Top view Marking Code: "W4"


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    PDF BA592ST OD-323 Junctio25 OD-323 SOD-323 smd code UM Diode SOD-323 smd code UM 18 w4 DIODE diode marking code W4 smd diode UM 08 CODE W4 diode MARKING CODE RP SMD Switching diode SOD323 DIODE marking W4 diode marking code W4 SOD-323

    H 48 zener diode diagram

    Abstract: zener diode code c22 C18 zener c27 zener diode diode zener WP zener C27 SOT23 Zener diode WD diode wg SOT-23 diode zener WL zener c22
    Text: SENSITRON SEMICONDUCTOR BZX84C2V4 BZX84C39 350mW SURFACE MOUNT ZENER DIODE Data Sheet 2597, Rev. –  Features  ! ! ! ! ! ! Planar Die Construction L 350mW Power Dissipation 2.4 – 39V Nominal Zener Voltage 5% Standard Vz Tolerance Designed for Surface Mount Application


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    PDF BZX84C2V4 BZX84C39 350mW OT-23, MIL-STD-202, BZX84Cxx-T1 H 48 zener diode diagram zener diode code c22 C18 zener c27 zener diode diode zener WP zener C27 SOT23 Zener diode WD diode wg SOT-23 diode zener WL zener c22

    marking DIODE W4

    Abstract: No abstract text available
    Text: BA592WS SILICON RF SWITCHING DIODE Features • Very low forward resistance • Small capacitance PINNING Applications • For band switching in TV/VTR tuners and mobile applications Absolute Maximum Ratings Ta = 25 OC Parameter DESCRIPTION PIN 1 Cathode


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    PDF BA592WS OD-323 OD-323 marking DIODE W4

    Untitled

    Abstract: No abstract text available
    Text: Formosa MS SMD Zener Diode BZT52-S Series List List. 1 Package outline. 2 Features. 2


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    PDF BZT52-S MIL-STD-750D METHOD-1026 JESD22-A102 METHOD-1051 METHOD-1056 1000hrs.

    Untitled

    Abstract: No abstract text available
    Text: Formosa MS SMD Zener Diode BZT55 Series List List. 1 Package outline. 2 Features. 2


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    PDF BZT55 MIL-STD-750D METHOD-1038 JESD22-A102 METHOD-1051 METHOD-1056 1000hrs.

    Zener diode smd marking WU

    Abstract: Zener diode wz 140
    Text: Formosa MS SMD Zener Diode BZT52 Series List List. 1 Package outline. 2 Features. 2


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    PDF BZT52 MIL-STD-750D METHOD-1026 JESD22-A102 METHOD-1051 METHOD-1056 1000hrs. Zener diode smd marking WU Zener diode wz 140

    BZT52C15S

    Abstract: No abstract text available
    Text: PRELIMINARY BZT52C2V7S - BZT52C39S SURFACE MOUNT ZENER DIODE POWER SEMICONDUCTOR Features • • • • Planar Die Construction Ultra-Small Surface Mount Package General Purpose Ideally suited for Automated Assembly Processes E D A B Mechanical Data •


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    PDF BZT52C2V7S BZT52C39S OD-323 OD-323, MIL-STD-202, DS30093 BZT52C15S

    BZT52-C9V1S

    Abstract: No abstract text available
    Text: NEW PRODUCT BZT52C2V4S - BZT52C39S SURFACE MOUNT ZENER DIODE POWER SEMICONDUCTOR Features • • • • Planar Die Construction Ultra-Small Surface Mount Package General Purpose Ideally suited for Automated Assembly Processes E D A B Mechanical Data •


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    PDF BZT52C2V4S BZT52C39S OD-323 OD-323, MIL-STD-202, 300ms. DS30093 BZT52-C9V1S

    Motorola transistor smd marking codes

    Abstract: walkie-talkie transceiver diagram BFM505 BF256B spice model 2SK163 UAF3000 BGO807C FET marking code 365 marking code M2 SOT23 SOT56
    Text: RF Manual 8 edition th Application and design manual for RF products June 2006 date of release: June 2006 document order number: 9397 750 15589 Henk Roelofs,Vice President & General Manager RF Products Introduction Every edition we challenge ourselves to improve our RF manual. This 8th edition is no exception.


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    Untitled

    Abstract: No abstract text available
    Text: BZX584Cx Series SURFACE MOUNT ZENER DIODE REVERSE VOLTAGE – 2.4 to 39 Volts POWER DISSIPATION – 0.15 Watts FEATURES SOD-523 • Planar die construction • 150mW power dissipation rating • Ultra-small surface mount package SOD-523 MECHANICAL DATA • Case: SOD-523 Plastic


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    PDF BZX584Cx OD-523 OD-523 150mW J-STD-020D 2002/95/EC May-2009, KSJR05 25mm2.

    2SK43 transistor

    Abstract: smd transistor m29 sot343 UXA23465 Motorola transistor smd marking codes walkie-talkie transceiver diagram UXA23476 diode SMD WL sot23 BF862 AM LNA uaf3000 2SK163
    Text: th 1 ed ition 10 th editio n t h 1 e d th i t i o n RF manual 10 edition 10 Application and design manual for RF products TH September 2007 www.nxp.com 2007 NXP B.V. All rights reserved. Reproduction in whole or in part is prohibited without the prior written


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    Untitled

    Abstract: No abstract text available
    Text: BZT52Cx Series SURFACE MOUNT ZENER DIODE REVERSE VOLTAGE – 2.4 to 43 Volts POWER DISSIPATION – 0.5 Watts FEATURES SOD-123 • Planar die construction • 500mW power dissipation rating • Ultra-small surface mount package SOD-123 MECHANICAL DATA • Case: SOD-123 Plastic


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    PDF BZT52Cx OD-123 OD-123 500mW J-STD-020D 2002/95/EC May-2010, KSJR03 25mm2.

    marking WM

    Abstract: BZT52C7v5 spice transistor marking WY BZT52C2V0 BZT52C2V4 BZT52C2V7 BZT52C39 BZT52C3V0 BZT52C3V3 BZT52C3V6
    Text: BZT52C2V0 - BZT52C39 SURFACE MOUNT ZENER DIODE SPICE MODELS: BZT52C2V0 BZT52C2V4 BZT52C2V7 BZT52C3V0 BZT52C3V3 BZT52C3V6 BZT52C3V9 BZT52C4V3 BZT52C4V7 BZT52C5V1 BZT52C5V6 BZT52C6V2 BZT52C6V8 BZT52C7V5 BZT52C8V2 BZT52C9V1 BZT52C10 BZT52C11 BZT52C12 BZT52C13 BZT52C15 BZT52C16


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    PDF BZT52C2V0 BZT52C39 BZT52C2V4 BZT52C2V7 BZT52C3V0 BZT52C3V3 BZT52C3V6 BZT52C3V9 BZT52C4V3 marking WM BZT52C7v5 spice transistor marking WY BZT52C39

    BZT52C10S

    Abstract: diode marking w8 marking WM BZT52C2V0S BZT52C3V0S 4 PC marking W6 diode BZT52C3V6S BZT52C3V9S BZT52C4V3S
    Text: BZT52C2V0S - BZT52C39S SURFACE MOUNT ZENER DIODE SPICE MODELS: BZT52C2V0S BZT52C2V4S BZT52C2V7S BZT52C3V0S BZT52C3V3S BZT52C3V6S BZT52C3V9S BZT52C4V3S BZT52C4V7S BZT52C5V1S BZT52C5V6S BZT52C6V2S BZT52C6V8S BZT52C7V5S BZT52C8V2S BZT52C9V1S BZT52C10S BZT52C11S BZT52C12S BZT52C13S BZT52C15S BZT52C16S


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    PDF BZT52C2V0S BZT52C39S BZT52C2V4S BZT52C2V7S BZT52C3V0S BZT52C3V3S BZT52C3V6S BZT52C3V9S BZT52C4V3S BZT52C10S diode marking w8 marking WM 4 PC marking W6 diode

    DIODE SMD w9

    Abstract: DIODE smd Wj SOt23 Zener diode smd marking z2 sot
    Text: SMD Zener Diode BZX84C2V4 THRU BZX84C75 Formosa MS List List. 1 Package outline. 2


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    PDF BZX84C2V4 BZX84C75 MIL-STD-750D METHOD-1026 JESD22-A102 1000hrs. METHOD-1038 METHOD-1031 DIODE SMD w9 DIODE smd Wj SOt23 Zener diode smd marking z2 sot

    w45nm50

    Abstract: 08-0D STW45NM50 STW45NM50FD
    Text: STW45NM50 N-channel 550 V @ TJmax, 0.08 Ω, 45 A, TO-247 MDmesh Power MOSFET Features Type VDSS RDS on max ID STW45NM50FD 500 V < 0.1 Ω 45 A • 100% avalanche tested ■ High dv/dt and avalanche capabilities ■ Low input capacitance and gate charge


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    PDF STW45NM50 O-247 STW45NM50FD w45nm50 08-0D STW45NM50 STW45NM50FD

    cmos 7448

    Abstract: MPC7448 CI 7448 IC 7448 MPC7448CE IC 7448 ACTIVE HIGH JESD51-2 MPC7441 MPC7445 MPC7447
    Text: Freescale Semiconductor Technical Data Document Number: MPC7448EC Rev. 3, 10/2006 MPC7448 RISC Microprocessor Hardware Specifications This document is primarily concerned with the PowerPC MPC7448. The MPC7448 is an implementation of the PowerPC™ microprocessor family of reduced instruction set


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    PDF MPC7448EC MPC7448 MPC7448. MPC7448 MPC7450 cmos 7448 CI 7448 IC 7448 MPC7448CE IC 7448 ACTIVE HIGH JESD51-2 MPC7441 MPC7445 MPC7447

    Untitled

    Abstract: No abstract text available
    Text: BZT52-V-Series Vishay Semiconductors Small Signal Zener Diodes Features • Silicon planar power zener diodes • These diodes are also available in other case styles and other configurations including: the SOT-23 case with type designation BZX84 series, the dual zener


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    PDF BZT52-V-Series OT-23 BZX84 AEC-Q101 2002/95/EC 2002/96/EC OD-123 GS18/10

    BZT52C2V4S

    Abstract: BZT52C2V7S BZT52C3S BZT52C3V3S BZT52C3V6S BZT52C3V9S BZT52C4V3S BZT52C51S SOD 323 MARKING CODE WU
    Text: WTE POWER SEMICONDUCTORS BZT52C2V4S BZT52C51S Pb 200mW SURFACE MOUNT ZENER DIODE Features ! Planar Die Construction ! ! ! ! ! 200mW Power Dissipation 2.4 – 51V Nominal Zener Voltage 5% Standard Vz Tolerance Designed for Surface Mount Application C Plastic Material – UL Recognition Flammability


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    PDF BZT52C2V4S BZT52C51S 200mW OD-323 OD-323, MIL-STD-202, BZT52C2V4S BZT52C2V7S BZT52C3S BZT52C3V3S BZT52C3V6S BZT52C3V9S BZT52C4V3S BZT52C51S SOD 323 MARKING CODE WU

    Untitled

    Abstract: No abstract text available
    Text: BZT52C2V4 THRU BZT52C51 Surface Mount Zener Diode Voltage Range 2.4 to 51 Volts 500m Watts Power Dissipation SOD-123 Features 0.022 0.55 Typ. Min. Planar die construction 500 mW power dissipation on ceramic PCB Ideally suited for automated assembly processes


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    PDF BZT52C2V4 BZT52C51 OD-123 OD-123, MIIL-STD-202, 300us

    W45NM60

    Abstract: w45*60 STW45NM60 JESD97
    Text: STW45NM60 N-channel 650V@Tjmax - 0.09Ω - 45A - TO-247 MDmesh Power MOSFET General features Type VDSS @Tjmax RDS(on) ID STW45NM60 650V < 0.11Ω 45A • High dv/dt and avalanche capabilities ■ 100% avalanche tested ■ Low input capacitance and gate charge


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    PDF STW45NM60 O-247 W45NM60 w45*60 STW45NM60 JESD97

    Untitled

    Abstract: No abstract text available
    Text: Super Fast Recovery Diode Twin Diode OUTLINE SF10LC30SM 3 0 0 V 10 A Feature •s v - r x • trr=25ns • 7JIÆ -JI/K • * 8 S K Œ 2kV SII • Low Noise • tnr=25ns • Full Molded • Dielectric Strength 2kV Main Use • Switching Regulator • Home Appliance, Office Automation


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    PDF SF10LC30SM J533-1)

    2sb1303

    Abstract: No abstract text available
    Text: SANYO SEMICONDUCTOR ' CORP 1EE II | 7 1 1 7 0 71 1 O M S im T -il' £>l S S 2 S B 1 2 3 1 / 2 S D 1 841 S S 2 S B 1 3 2 5 /2 S D 1 999 Complementary Pair Silicon Transistors Complementary Pair Silicon Transistors Low Saturation Voltage Amp Applications Motor Driver Applications


    OCR Scan
    PDF 2SB1231, 2SB1232, 2SB1303, 2SB1323, 2SB1325, 2SB1346, 2SC4002, 2SC4003, 2SD1841, 2SD1842, 2sb1303

    A180J

    Abstract: No abstract text available
    Text: 1SE D POWEREX I N C w n u B te • 73mfa21 GGG342S 5 ■ -3 S -Z 3 C D 42_40 C D 47_ 40 x Powerex, inc., Httlls Street, Youngwood, Pennsylvania 15697 412 925-7272 Powerex Europe, S.A., 428 Avenue G. Durand, BP107, 72003 Le Mans, France (43) 72.75.15


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    PDF 73mfa21 GGG342S peres/100-1400 BP107, Amperes/100-1400 CD420840 MAX/10 A180J