MOZ 23
Abstract: DD1000S33HE3 48 H diode
Text: Technische Information / technical information DD1000S33HE3 IGBT-Module IGBT-modules IHM-B Modul mit Emcon3 Diode IHM-B module with Emcon3 diode Diode-Wechselrichter / diode-inverter Vorläufige Daten / preliminary data Höchstzulässige Werte / maximum rated values
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DD1000S33HE3
MOZ 23
DD1000S33HE3
48 H diode
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DD1000S33
Abstract: FZ1000R33HE3
Text: Technische Information / technical information DD1000S33HE3 IGBT-Module IGBT-modules IHM-B Modul mit Emcon3 Diode IHM-B module with Emcon3 diode Diode-Wechselrichter / diode-inverter Vorläufige Daten / preliminary data Höchstzulässige Werte / maximum rated values
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DD1000S33HE3
DD1000S33
FZ1000R33HE3
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Diode Motorola 711 2N2905A
Abstract: pin configuration transistor BC547 2N2222 BC237 2N555
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MMAD130 MMAD1103 MMAD1105 MMAD1107 MMAD1109 Monolithic Diode Arrays Surface Mount Diode Arrays These diode arrays are multiple diode junctions fabricated by a planar process and mounted in integrated circuit packages for use in high–current, fast–switching
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MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
MV1640
MV1642
MV1644
MV2103
Diode Motorola 711 2N2905A
pin configuration transistor BC547 2N2222
BC237
2N555
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Untitled
Abstract: No abstract text available
Text: STPSC10H065 650 V power Schottky silicon carbide diode Datasheet - production data Description A K The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure
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STPSC10H065
O-220AC
O-220AC
STPSC10H065D
STPSC10H065DI
STPSC10H065B-TR
STPSC10H065G-TR
DocID023604
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Untitled
Abstract: No abstract text available
Text: STPSC6H065 650 V power Schottky silicon carbide diode Datasheet - production data Description A The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure
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STPSC6H065
O-220AC
STPSC6H065D
STPSC6H065G-TR
DocID023247
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Untitled
Abstract: No abstract text available
Text: STPSC10H065 650 V power Schottky silicon carbide diode Datasheet - production data Description A The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure
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STPSC10H065
O-220AC
STPSC10H065D
STPSC10H065G-TR
DocID023604
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Untitled
Abstract: No abstract text available
Text: STPSC6H065 650 V power Schottky silicon carbide diode Datasheet - production data Description A The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure
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STPSC6H065
O-220AC
O-220AC
STPSC6H065D
STPSC6H065DI
STPSC6H065B-TR
STPSC6H065G-TR
DocID023247
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Untitled
Abstract: No abstract text available
Text: STPSC4H065 650 V power Schottky silicon carbide diode Datasheet - production data Description A K The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure
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STPSC4H065
O-220AC
O-220AC
STPSC4H065D
STPSC4H065DI
DocID023598
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Untitled
Abstract: No abstract text available
Text: STPSC8H065 650 V power Schottky silicon carbide diode Datasheet − production data Description A K The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure
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STPSC8H065
O-220AC
O-220AC
STPSC8H065D
STPSC8H065DI
STPSC8H065B-TR
STPSC8H065G-TR
DocID023603
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Untitled
Abstract: No abstract text available
Text: STPSC10H065-Y Automotive 650 V power Schottky silicon carbide diode Datasheet - production data Description A The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure
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STPSC10H065-Y
DocID026618
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IR PHOTO DIODE
Abstract: PHOTO TRANSISTOR 940nm infrared photo reflector NJL5147EL PHOTO TRANSISTOR NJL1104B NJL1120B NJL1121B NJL1127L NJL5165K-H2
Text: TEMPORARY OR DISCONTINUE PRODUCT TABLE 1. Temporary Product ITEM Photo Reflector TYPE NJL5165K-H1 ALTERNATIVE ARTICLE NJL5165K-H2 OUTLINE ❍ DISTINCTION CHARACTERISTICS ❍ 2. Discontinue Product ITEM Infrared Emitting Diode λp=940nm Infrared Emitting Diode
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NJL5165K-H1
NJL5165K-H2
940nm)
900nm)
850nm)
NJL1104B
NJL1120B
NJL1121B
NJL1121B-S
NJL1127L
IR PHOTO DIODE
PHOTO TRANSISTOR 940nm
infrared photo reflector
NJL5147EL
PHOTO TRANSISTOR
NJL1104B
NJL1120B
NJL1121B
NJL1127L
NJL5165K-H2
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PHOTO TRANSISTOR 940nm
Abstract: IR PHOTO DIODE PHOTO TRANSISTOR "Photo Detector" NJL811B NJL5147EL PHOTO detector "photo transistor" ir PHOTO TRANSISTOR IR DETECTOR
Text: TEMPORARY OR DISCONTINUE PRODUCT TABLE 1. Temporary Product ITEM Photo Reflector TYPE NJL5165K-H1 ALTERNATIVE ARTICLE NJL5165K-H2 OUTLINE ❍ DISTINCTION CHARACTERISTICS ❍ 2. Discontinue Product ITEM Infrared Emitting Diode λp=940nm Infrared Emitting Diode
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NJL5165K-H1
NJL5165K-H2
940nm)
900nm)
NJL1104B
NJL1120B
NJL1121B
NJL1121B-S
NJL6103B
NJL611B
PHOTO TRANSISTOR 940nm
IR PHOTO DIODE
PHOTO TRANSISTOR
"Photo Detector"
NJL811B
NJL5147EL
PHOTO detector
"photo transistor"
ir PHOTO TRANSISTOR
IR DETECTOR
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H20R1202
Abstract: h20r1202 igbt equivalent H20R1202 equivalent of h20r1202 igbt h20r1202 H20R IHW20N120R2 H20R120 H20R12 igbt 1200V 60A
Text: IHW20N120R2 Soft Switching Series Reverse Conducting IGBT with monolithic body diode Features: • Powerful monolithic Body Diode with very low forward voltage • Body diode clamps negative voltages • TrenchStop and Fieldstop technology for 1200 V applications
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IHW20N120R2
IHW20N120R2
H20R1202
h20r1202 igbt
equivalent H20R1202
equivalent of h20r1202
igbt h20r1202
H20R
H20R120
H20R12
igbt 1200V 60A
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H20R120
Abstract: igbt h20r120 h20r H20R12 h20r120 igbt IHW20N120R ALL h20r120 marking h20r120 Reverse Conducting IGBT with monolithic body diode igbt 1200V 60A
Text: IHW20N120R Soft Switching Series Reverse Conducting IGBT with monolithic body diode Features: • Powerful monolithic Body Diode with very low forward voltage • Body diode clamps negative voltages • TrenchStop and Fieldstop technology for 1200 V applications
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IHW20N120R
IHW20N120R
H20R120
igbt h20r120
h20r
H20R12
h20r120 igbt
ALL h20r120
marking h20r120
Reverse Conducting IGBT with monolithic body diode
igbt 1200V 60A
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H25R1202
Abstract: IHW25N120R2 IGBT 600V 40A IGBT 1000V .50A IGBT H25R1202 PG-TO-247-3-21 IGBT 600V 40A diode H25R120
Text: IHW25N120R2 Soft Switching Series Reverse Conducting IGBT with monolithic body diode Features: • Powerful monolithic Body Diode with very low forward voltage • Body diode clamps negative voltages • Trench and Fieldstop technology for 1200 V applications offers :
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IHW25N120R2
PG-TO-247-3-21
H25R1202
IHW25N120R2
IGBT 600V 40A
IGBT 1000V .50A
IGBT H25R1202
PG-TO-247-3-21
IGBT 600V 40A diode
H25R120
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H25R1202
Abstract: IGBT H25R1202 H25R120 IHW25N120R2 H25R12
Text: IHW25N120R2 Soft Switching Series Reverse Conducting IGBT with monolithic body diode Features: • Powerful monolithic Body Diode with very low forward voltage • Body diode clamps negative voltages • Trench and Fieldstop technology for 1200 V applications offers :
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IHW25N120R2
IHW25N120R2
H25R1202
IGBT H25R1202
H25R120
H25R12
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H20R120
Abstract: h20r120 igbt 20A 500v igbt
Text: IHW20N120R Soft Switching Series ^ Reverse Conducting IGBT with monolithic body diode Features: • Powerful monolithic Body Diode with very low forward voltage • Body diode clamps negative voltages • Trench and Fieldstop technology for 1200 V applications offers :
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IHW20N120R
IHW20N120R
H20R120
h20r120 igbt
20A 500v igbt
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H20R1202
Abstract: equivalent of h20r1202 equivalent H20R1202
Text: IHW20N120R2 Soft Switching Series Reverse Conducting IGBT with monolithic body diode Features: • Powerful monolithic Body Diode with very low forward voltage • Body diode clamps negative voltages • TrenchStop and Fieldstop technology for 1200 V applications
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IHW20N120R2
PG-TO-247-3-21
H20R1202
equivalent of h20r1202
equivalent H20R1202
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diode cross reference
Abstract: schottky diode cross reference MV3110 AH513 AH761 AH512 impatt diode Gunn Diode AH370 DMK-6606
Text: CROS S R E F E R E N C E LIST MA/COM R E F . TC S REF. D E S C R IP T IO N MA40401 PACKAGED SCHOTTKY DIODE DH378 MA40402 PACKAGED SCHOTTKY DIODE DH379 MA40404 PACKAGED SCHOTTKY DIODE DH383 MA40404 PACKAGED SCHOTTKY DIODE DH384 MA40404 PACKAGED SCHOTTKY DIODE
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MA40401
MA40402
MA40404
MA40405
MA40406
MA40408
diode cross reference
schottky diode cross reference
MV3110
AH513
AH761
AH512
impatt diode
Gunn Diode
AH370
DMK-6606
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optointerrupter
Abstract: No abstract text available
Text: Optointerrupter Specifications _ H22B1, H22B2, H22B3 Optointerrupter GaAs Infrared Emitting Diode andNPN Sfllcon Photo-Darlington Module with 1mm Aperture T he H22B Interrupter Module is a gallium arsenide infrared emitting diode coupled to a silicon Darlington-connected
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H22B1,
H22B2,
H22B3
optointerrupter
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Untitled
Abstract: No abstract text available
Text: Optointerrupter Specifications H22A4, H22A5, H22A6 Optointerrupter GaAs Infrared Emitting Diode and NPN Silicon Phototransistor Module with 1mm Aperture The H22A Interrupter M odule is a gallium arsenide infrared em itting diode coupled to a silicon phototransistor in a
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H22A4,
H22A5,
H22A6
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22LL
Abstract: H22L2
Text: Optointerrupter Specifications_ H22L1, H22L2 Optointerrupter GaAs Infrared Emitting Diode and Microprocessor Compatible Schmitt Trigger Module with 1mm Aperture ' M I L L IMETERS i T h e H22L series is a gallium arsenide, in frared em itting diode
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H22L1,
H22L2
22LL
H22L2
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Untitled
Abstract: No abstract text available
Text: Optointerrupter Specifications H22A4, H22A5, H22A6 Optointerrupter G a A s Infrared Emitting Diode Module with 1mm Aperture N PN Silicon Phototransistor The H22A Interrupter Module is a gallium arsenide infrared emitting diode coupled to a silicon phototransistor in a
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H22A4,
H22A5,
H22A6
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Untitled
Abstract: No abstract text available
Text: Optolnterrupter Specifications H21B4, H21B5, H21B6 Optointerrupter GaAs Infrared Emitting Diode and NPN Silicon Photo-Darlington Amplifier Module with 1mm Aperture ~ T he H2 IB Interrupter Module is a gallium arsenide infrared em itting diode coupled to a silicon Darlington-connected
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H21B4,
H21B5,
H21B6
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