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    Abstract: No abstract text available
    Text: STPSC8H065 650 V power Schottky silicon carbide diode Datasheet − production data Description A K The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure


    Original     		PDF STPSC8H065 O-220AC O-220AC STPSC8H065D STPSC8H065DI STPSC8H065B-TR STPSC8H065G-TR DocID023603

    Untitled

    Abstract: No abstract text available
    Text: STPSC8H065 650 V power Schottky silicon carbide diode Datasheet  production data Description A K K K A TO-220AC STPSC8H065D K A NC D²PAK STPSC8H065G-TR K The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon


    Original     		PDF STPSC8H065 O-220AC STPSC8H065D STPSC8H065G-TR DocID023603