tunable laser diode
Abstract: No abstract text available
Text: DATA SHEET LASER DIODE NX8570SCxxxQ-BA 1 550 nm CW LIGHT SOURCE InGaAsP MQW-DFB LASER DIODE MODULE WITH WAVELENGTH MONITOR DESCRIPTION The NX8570SCxxxQ-BA is a 1 550 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode module with wavelength
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NX8570SCxxxQ-BA
NX8570SCxxxQ-BA
tunable laser diode
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883Q
Abstract: PX10160E 19275
Text: DATA SHEET LASER DIODE NX8571SCxxxQ-BA 1 550 nm CW LIGHT SOURCE InGaAsP MQW-DFB LASER DIODE MODULE WITH WAVELENGTH MONITOR DESCRIPTION The NX8571SCxxxQ-BA is a 1 550 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode module with wavelength
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NX8571SCxxxQ-BA
NX8571SCxxxQ-BA
883Q
PX10160E
19275
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NX8571SCxxxQ-BA
Abstract: No abstract text available
Text: DATA SHEET LASER DIODE NX8571SCxxxQ-BA 1 550 nm CW LIGHT SOURCE InGaAsP MQW-DFB LASER DIODE MODULE WITH WAVELENGTH MONITOR DESCRIPTION The NX8571SCxxxQ-BA is a 1 550 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode module with wavelength
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NX8571SCxxxQ-BA
NX8571SCxxxQ-BA
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nec nx8562
Abstract: No abstract text available
Text: DATA SHEET LASER DIODE NX8570SCxxxQ-BA 1 550 nm CW LIGHT SOURCE InGaAsP MQW-DFB LASER DIODE MODULE WITH WAVELENGTH MONITOR DESCRIPTION The NX8570SCxxxQ-BA is a 1 550 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode module with wavelength
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NX8570SCxxxQ-BA
NX8570SCxxxQ-BA
nec nx8562
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BA682
Abstract: BA683 f 9370
Text: BA682.BA683 TELEFUNKEN Semiconductors Silicon Planar Diodes Features D Low differential forward resistance D Low diode capacitance D High reverse impedance Applications 94 9371 Band switching in VHF–tuners Absolute Maximum Ratings Tj = 25_C Parameter Reverse voltage
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BA682
BA683
50mmx50mmx1
D-74025
BA683
f 9370
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BA682
Abstract: BA683
Text: BA682.BA683 Vishay Telefunken Band Switching Diodes Features D D D D Silicon Planar Diodes Low differential forward resistance Low diode capacitance High reverse impedance Applications 94 9371 Band switching in VHF–tuners Order Instruction Type BA682 BA683
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BA682
BA683
BA682
BA683
D-74025
13-Feb-01
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DIODE ba 683
Abstract: TELEFUNKEN diode BA682 BA683
Text: BA682.BA683 Silicon Planar Diodes Features D Low differential forward resistance D Low diode capacitance D High reverse impedance Applications Band switching in VHF–tuners 94 9371 Absolute Maximum Ratings Tj = 25_C Parameter Reverse voltage Forward current
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BA682
BA683
24-Jun-96
50mmx50mmx1
D-74025
DIODE ba 683
TELEFUNKEN diode
BA683
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Untitled
Abstract: No abstract text available
Text: BA682.BA683 Vishay Telefunken Band Switching Diodes Features D D D D Silicon Planar Diodes Low differential forward resistance Low diode capacitance High reverse impedance Applications 94 9371 Band switching in VHF–tuners Order Instruction Type BA682 BA683
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BA682
BA683
BA682
BA682â
BA683â
D-74025
13-Feb-01
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BA682
Abstract: BA683 DIODE ba 683
Text: BA682.BA683 Vishay Semiconductors Band Switching Diodes Features D D D D Silicon Planar Diodes Low differential forward resistance Low diode capacitance High reverse impedance Applications 94 9371 Band switching in VHF–tuners Order Instruction Type BA682
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BA682
BA683
BA682
BA683
D-74025
13-Feb-01
DIODE ba 683
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BA682
Abstract: BA683
Text: BA682.BA683 Vishay Telefunken Silicon Planar Diodes Features D Low differential forward resistance D Low diode capacitance D High reverse impedance Applications 94 9371 Band switching in VHF–tuners Absolute Maximum Ratings Tj = 25_C Parameter Reverse voltage
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BA682
BA683
50mmx50mmx1
D-74025
01-Apr-99
BA683
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BA682
Abstract: BA683 DO-213 BLACK BAND
Text: BA682/BA683 VISHAY Vishay Semiconductors Band Switching Diodes Features • • • • Silicon Planar Diodes Low differential forward resistance Low diode capacitance High reverse impedance Applications 94 9371 Band switching in VHF-tuners Mechanical Data
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BA682/BA683
OD-80)
BA682
BA683
BA682-GS18
BA682-GS08
BA683-GS18
BA683-GS08
D-74025
26-Apr-04
DO-213 BLACK BAND
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BA682
Abstract: BA683 semiconductor band color code
Text: BA682/BA683 VISHAY Vishay Semiconductors Band Switching Diodes Features • • • • Silicon Planar Diodes Low differential forward resistance Low diode capacitance High reverse impedance Applications 94 9371 Band switching in VHF-tuners Mechanical Data
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BA682/BA683
OD-80)
BA682
BA683
BA682-GS18
BA682-GS08
BA683-GS18
BA683-GS08
D-74025
17-Feb-04
semiconductor band color code
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Untitled
Abstract: No abstract text available
Text: BA682 / BA683 Vishay Semiconductors Band Switching Diodes Features • • • • • • Silicon Planar Diodes Low differential forward resistance e2 Low diode capacitance High reverse impedance Lead Pb -free component Component in accordance to RoHS 2002/95/EC
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BA682
BA683
2002/95/EC
2002/96/EC
BA683
BA682-GS18
BA682-GS08
BA683-GS18
BA683-GS08d
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BA683-GS08
Abstract: BA682 BA682-GS08 BA683
Text: BA682 / BA683 Vishay Semiconductors Band Switching Diodes Features • • • • • • Silicon Planar Diodes Low differential forward resistance e2 Low diode capacitance High reverse impedance Lead Pb -free component Component in accordance to RoHS 2002/95/EC
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BA682
BA683
2002/95/EC
2002/96/EC
BA682
BA682-GS18
BA682-GS08
08-Apr-05
BA683-GS08
BA682-GS08
BA683
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BA 682
Abstract: BA682 BA682-GS08 BA683 BA683-GS08
Text: BA682 / BA683 Vishay Semiconductors Band Switching Diodes Features • • • • • • Silicon Planar Diodes Low differential forward resistance e2 Low diode capacitance High reverse impedance Lead Pb -free component Component in accordance to RoHS 2002/95/EC
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BA682
BA683
2002/95/EC
2002/96/EC
BA682
BA682-GS18
BA682-GS08
18-Jul-08
BA 682
BA682-GS08
BA683
BA683-GS08
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MAF100
Abstract: diode 682 diode marking code 682 BA 682 BA682 DIODE ba 683 BA diode BA683 A723 682 diode
Text: I - QBE D • • aaaSbQS 0015731 7 M S I E G Silicon PIN Diode» 7"- • - Ô7 - /S BA 682 • BA 683 - SIEMENS AK TI EN G E S E L L S C H A F - Low-loss VHF band switch for TV tuners K o A n Type1 Marking Ordering code for versions in bulk
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-BA683
Q62702-A145
Q62702-A723
Q62702-A121
BA683
QQ1S733
BA682
MAF100
diode 682
diode marking code 682
BA 682
BA682
DIODE ba 683
BA diode
BA683
A723
682 diode
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ba682
Abstract: diode marking code 682 BA683 MAF100
Text: I : übe t> : m aaasbos 0 0 1 5 7 3 1 • • ? « s ie g - 7 " - Ô 7 - /5 " Silicon PIN Diodes BA 682 .BA 683 - SIEMENS AKTIENGESELLSCHAF -• Low-loss VHF band switch for TV tuners K A Type1 Marking
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Q62702-A723
Q62702-A121
Q62702-A145
235b05
QQ1S733
ba682
diode marking code 682
BA683
MAF100
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BA389 PIN Diode
Abstract: ba389 BA284 V/BA389 PIN Diode BA389 diode
Text: ~ ä fl 8236320 SIEMENS/ Diodes ] > F |f l2 3 b 3 a o 001 4552 i S P C L , SEMÎCÔNÔS ~ 880 14252 D T ~ 0 1 - S Silicon RF switching diodes Glass package DO 35 Type Characteristics f A = 25°C) VR Applications Figure VHF tuners 10 Applications Figure
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BA282
BA284
BA389 PIN Diode
ba389
BA284
V/BA389 PIN Diode
BA389 diode
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BA1405F
Abstract: BA1335 BA6U BA8221 BA34168L ba843 BA8221AN BA3528FP 4236L BA-1320
Text: ICs for Audio Applications Block Diagram of Typical Applications 3V FM/AM stereo headphone system Front end B A 4425 20mW X 2 Mute sensor Í B A 3708 j VD 3V 32 n f HEADPHONES Stereo double cassette recorder system with radio and CD player IF+MPX U tM P X
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BA1442A
BA1448S
BA1332
BU2614
BU2616
BU2615
BU2611
BU2619
BU2621
BA1407A
BA1405F
BA1335
BA6U
BA8221
BA34168L
ba843
BA8221AN
BA3528FP
4236L
BA-1320
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TFK diodes BYW 76
Abstract: 13009 Jt 43 byw 56 equivalent TFK diodes 148 tfk U 264 tfk 804 TFK 421 diode BYW 60 diode byt 45 J BYT 45 J
Text: .4 . 'W iriy IFWCCIRQ electronic Creative Technologies Selection guide transistors and diodes Contents, alpha-numeric Type Page BA 204 BA 243 BA 244 BA 282 BA 283 BA 4 79 G BA 4 7 9 S BA 679 BA 682 BA 683 BA 779 6 6 6 6 6 7 7 7 6 6 7 B A Q 33 BAQ 34 BAQ 35
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FD6666 diode
Abstract: diode BY100 1N4Q07 BA100 diode BY164 BB139 BAY38 diode aa119 1S184 diode 1N82
Text: mil UIIAGHRISnCS [M IN IS i SDISlimiS BY B J . B AB A N I la TANDY CORPORATION Although every c are is taken with the p rep aration of this book the p u b lish ers will not be resp on sib le for any e r r o r s that might occur. 1975 I. S. B. N. 0 900162 46 5
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A4/10
A5/62
A5/105
A1000
AA100
AA110
AA111
AA112
AA113
AA114
FD6666 diode
diode BY100
1N4Q07
BA100 diode
BY164
BB139
BAY38
diode aa119
1S184 diode
1N82
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HCT651
Abstract: HCT652
Text: r= T S G S -T H O M S O N * 7 # « RiflDigMIlLllCTSMO ^ M 54/74HCT651 M 54/74H C T652 HCT651 OCTAL B U S TRANSCEIVER/REGISTER 3-STATE, INV. HCT652 OCTAL B U S TRANSCEIVER/REGISTER (3-STATE) • LOW POWER DISSIPATION ICC = V A (MAX.) at T a = 2 5°C ■ COMPATIBLE W ITH TTL OUTPUTS
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M54/74HCT651
M54/74HCT652
HCT651
HCT652
54/74LST651/652
M54/74H
CT651/652
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cqx 87
Abstract: germanium AEG Thyristor T 558 F TDA 2516 bu208 bf506 la 4430 BF963 TDA1086 transistor bf 175
Text: Page Contents Diodes 8 Transistors 15 Optoelectronic Devices 24 Integrated Circuits 33 1 Contents, alpha-numeric Type Page AA 112 AA113 AA117 AA 118 AA119 AA 132 AA 133 AA 134 AA 137 AA 138 12 12 8 12 12 8 8 8 12 12 BA 111 BA 121 BA 124 BA 125 BA 147/. BA 157
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AA113
AA117
AA119
BAV17
BAV18
BAV19
BAV20
BAV21
cqx 87
germanium
AEG Thyristor T 558 F
TDA 2516
bu208
bf506
la 4430
BF963
TDA1086
transistor bf 175
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74HCT651
Abstract: No abstract text available
Text: /S T * 7 #» S G S -T H O M S O N 6S lO W IIL Il© ir » H B E i M 54 / 7 4 H C T 651 M 54/74H C T652 HCT651 OCTAL BUS TRANSCEIVER/REGISTER 3-STATE, INV. HCT652 OCTAL BUS T RANSCEIVER/REGISTER (3-STATE) • LOW POWER DISSIPATION |cc = 4piA (MAX.) at TA = 25°C
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54/74H
HCT651
HCT652
M54HCTXXXF1
M74HCTXXXM1
M74HCTXXXB1N
M74HTCXXXF1
54/74LST651/652
M54/74HCT651
M54/74HCT651/652
74HCT651
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