C-150
Abstract: IRF1010 IRF530S IRGB15B60KD IRGS15B60KD IRGSL15B60KD IRL3103L
Text: PD - 94383C IRGB15B60KD IRGS15B60KD IRGSL15B60KD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.
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94383C
IRGB15B60KD
IRGS15B60KD
IRGSL15B60KD
O-220AB
O-220AB
AN-994.
O-220
C-150
IRF1010
IRF530S
IRGB15B60KD
IRGS15B60KD
IRGSL15B60KD
IRL3103L
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IRGS15B60KD
Abstract: IRGSL15B60KD AN-994 C-150 IRGB15B60KD
Text: PD - 94383D IRGB15B60KD IRGS15B60KD IRGSL15B60KD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.
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94383D
IRGB15B60KD
IRGS15B60KD
IRGSL15B60KD
O-220AB
AN-994.
O-220
IRGS15B60KD
IRGSL15B60KD
AN-994
C-150
IRGB15B60KD
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AN-994
Abstract: C-150 IRGS15B60KD IRGSL15B60KD IRGB15B60KDPBF
Text: PD - 95194 IRGB15B60KDPbF IRGS15B60KD IRGSL15B60KD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.
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IRGB15B60KDPbF
IRGS15B60KD
IRGSL15B60KD
O-220
O-220AB
O-262
IRGB15B60KDPbF
IRGS15B60KD
AN-994.
AN-994
C-150
IRGSL15B60KD
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Untitled
Abstract: No abstract text available
Text: PD - 94383 IRGS15B60KD IRGSL15B60KD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C VCES = 600V Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.
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IRGS15B60KD
IRGSL15B60KD
O-262
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C-150
Abstract: IRF1010 IRF530S IRGB15B60KD IRGS15B60KD IRGSL15B60KD IRL3103L
Text: PD - 94383B IRGB15B60KD IRGS15B60KD IRGSL15B60KD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.
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94383B
IRGB15B60KD
IRGS15B60KD
IRGSL15B60KD
O-220AB
O-220AB
AN-994.
O-220
C-150
IRF1010
IRF530S
IRGB15B60KD
IRGS15B60KD
IRGSL15B60KD
IRL3103L
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Untitled
Abstract: No abstract text available
Text: PD - 94383D IRGB15B60KD IRGS15B60KD IRGSL15B60KD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.
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94383D
IRGB15B60KD
IRGS15B60KD
IRGSL15B60KD
O-220AB
AN-994.
O-220
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IRGB15B60K
Abstract: AN-994 C-150 IRGB15B60KD IRGS15B60KD IRGSL15B60KD 94383D
Text: PD - 94383D IRGB15B60KD IRGS15B60KD IRGSL15B60KD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.
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94383D
IRGB15B60KD
IRGS15B60KD
IRGSL15B60KD
O-220AB
AN-994.
O-220
IRGB15B60K
AN-994
C-150
IRGB15B60KD
IRGS15B60KD
IRGSL15B60KD
94383D
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Untitled
Abstract: No abstract text available
Text: PD - 95194A IRGB15B60KDPbF IRGS15B60KDPbF IRGSL15B60KDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA.
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5194A
IRGB15B60KDPbF
IRGS15B60KDPbF
IRGSL15B60KDPbF
O-220AB
O-262
AN-994.
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AN-994
Abstract: C-150 IRGS15B60K
Text: PD - 95194A IRGB15B60KDPbF IRGS15B60KDPbF IRGSL15B60KDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA.
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5194A
IRGB15B60KDPbF
IRGS15B60KDPbF
IRGSL15B60KDPbF
O-220AB
AN-994.
O-220
AN-994
C-150
IRGS15B60K
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AN-994
Abstract: C-150
Text: PD - 95194A IRGB15B60KDPbF IRGS15B60KDPbF IRGSL15B60KDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA.
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5194A
IRGB15B60KDPbF
IRGS15B60KDPbF
IRGSL15B60KDPbF
O-220AB
AN-994.
O-220
AN-994
C-150
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Untitled
Abstract: No abstract text available
Text: Technische Information / technical information IGBT-Module IGBT-modules DDB6U75N16YR Vorläufige Daten / preliminary data Diode-Gleichrichter / diode-rectifier Höchstzulässige Werte / maximum rated values !32C5C 36"#$ 6%1C3B 1322 14BBFB &' 6 6*+
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DDB6U75N16YR
14BBFB
06123B
F223B
6043C0F0613265C
3269F
6123B
043C0F06
06123B
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PK P6KE 200A
Abstract: SLD30-018 436 6V8A 1.5KA36CA N10H kt 201-500 P6KA36CA P6KA 335 Diode N10Z P6KA18CA
Text: PRODUCT CATALOG & DESIGN GUIDE DIODE Transient Voltage Suppression TVS Diode Products Littelfuse Circuit Prot Solutions Portf Consumer Electronics Telecom White Goods Medical Equipment TVSS and Power S DESIGN SUPPORT Live Application Design and Technical Support—Tap into our expertise. Littelfuse engineers are available around the world to help you address design challenges and develop
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EC111
EC2111v1E0804
PK P6KE 200A
SLD30-018
436 6V8A
1.5KA36CA
N10H
kt 201-500
P6KA36CA
P6KA 335
Diode N10Z
P6KA18CA
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IXYN100N120C3H1
Abstract: No abstract text available
Text: Advance Technical Information 1200V XPTTM IGBT GenX3TM w/ Diode IXYN100N120C3H1 High-Speed IGBT for 20-50 kHz Switching VCES IC110 VCE sat tfi(typ) = = ≤ = 1200V 62A 3.5V 110ns E SOT-227B, miniBLOC E153432 Symbol Test Conditions Maximum Ratings VCES VCGR
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IXYN100N120C3H1
IC110
110ns
OT-227B,
E153432
IF110
100N120C3
IXYN100N120C3H1
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IXTN62N50L
Abstract: No abstract text available
Text: LinearTM Power MOSFET w/Extended FBSOA VDSS ID25 IXTN62N50L RDS on N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = 500V = 62A ≤ 100mΩ Ω miniBLOC E153432 S G Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V VDGR
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IXTN62N50L
E153432
62N50L
11-04-11-B
IXTN62N50L
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Untitled
Abstract: No abstract text available
Text: LinearTM Power MOSFET w/Extended FBSOA VDSS ID25 IXTB62N50L RDS on N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = 500V = 62A ≤ 100mΩ Ω PLUS264TM Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ
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IXTB62N50L
PLUS264TM
62N50L
11-04-11-B
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IXTB62N50L
Abstract: No abstract text available
Text: LinearTM Power MOSFET w/Extended FBSOA IXTB62N50L VDSS ID25 RDS on N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = 500V = 62A ≤ 100mΩ Ω PLUS264TM Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ
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IXTB62N50L
PLUS264TM
62N50L
11-04-11-B
IXTB62N50L
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Untitled
Abstract: No abstract text available
Text: Preliminary Technical Information IXYN100N120C3H1 1200V XPTTM IGBT GenX3TM w/ Diode High-Speed IGBT for 20-50 kHz Switching VCES IC110 VCE sat tfi(typ) = = ≤ = 1200V 62A 3.5V 110ns E Symbol Test Conditions VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ
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IXYN100N120C3H1
IC110
110ns
OT-227B,
E153432
IF110
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iXYN100N120C3H1
Abstract: ixyn100n120c3
Text: Advance Technical Information IXYN100N120C3H1 1200V XPTTM IGBT GenX3TM w/ Diode High-Speed IGBT for 20-50 kHz Switching VCES IC110 VCE sat tfi(typ) = = ≤ = 1200V 62A 3.5V 110ns E Symbol Test Conditions VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ
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IXYN100N120C3H1
IC110
110ns
IF110
OT-227B,
E153432
100N120C3
iXYN100N120C3H1
ixyn100n120c3
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75337S
Abstract: HUF75337G3 75337P HUF75337P3 HUF75337S3 HUF75337S3S HUF75337S3ST TB334
Text: HUF75337G3, HUF75337P3, HUF75337S3, HUF75337S3S S E M I C O N D U C T O R 62A, 55V, 0.014 Ohm, N-Channel UltraFET Power MOSFETs January 1998 Features Description • 62A, 55V • Ultra Low On-Resistance, rDS ON = 0.014Ω • Diode Exhibits Both High Speed and Soft Recovery
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HUF75337G3,
HUF75337P3,
HUF75337S3,
HUF75337S3S
TB334,
1-800-4-HARRIS
75337S
HUF75337G3
75337P
HUF75337P3
HUF75337S3
HUF75337S3S
HUF75337S3ST
TB334
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IGBT gate driver welding
Abstract: IRGP4063D
Text: IRGP4063D1PbF IRGP4063D1-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 600V C IC = 62A, TC =100°C G G tSC 5µs, TJ max = 175°C G VCE(ON) typ. = 1.65V @ IC = 48A E E n-channel Applica ons • Industrial Motor Drive
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IRGP4063D1PbF
IRGP4063D1-EPbF
IRGP4063D1PbF
IRGP4063D1EPbF
IRGP4063D1-EPbF
IRGP4063D1PbF/IRGP4063D1-EPbF
O-247AC
O-247AD
JESD47F)
IGBT gate driver welding
IRGP4063D
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irgp4063d1
Abstract: IRGP4063D IRGP4063
Text: IRGP4063D1PbF IRGP4063D1-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 600V C IC = 62A, TC =100°C G G tSC 5µs, TJ max = 175°C G VCE(ON) typ. = 1.65V @ IC = 48A E E n-channel Applica ons • Industrial Motor Drive
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IRGP4063D1PbF
IRGP4063D1-EPbF
IRGP4063D1PbF
IRGP4063D1EPbF
IRGP4063D1-EPbF
IRGP4063D1PbF/IRGP4063D1-EPbF
O-247AC
O-247AD
JESD47F)
irgp4063d1
IRGP4063D
IRGP4063
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Untitled
Abstract: No abstract text available
Text: Transient Voltage Suppression Diodes Surface Mount – 600W > TPSMB series TPSMB Series Uni-directional TVS Diode Arrays SPA Description Family of Products The TPSMB series is designed specifically to protect sensitive electronic equipment from voltage transients
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AEC-Q101
JESD201A
EC-61000-4-2
DO-214AA
12mm/13â
RS-481
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GDE 13a DIODE
Abstract: diode marking GDE 38 diode 009 6V8A marking diode 47C sot23 NEC D 882 p GEX 36A DIODE Diode Gfg 6f MOTOROLA 727 36A Diode GFP 56A GFM 16A
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA SOTĆ23 Dual Monolithic Common Anode Zener MMBZ5V6ALT1 ADDITIONAL VOLTAGES AVAILABLE Transient Voltage Suppressor For ESD Protection Motorola Preferred Device This dual monolithic silicon zener diode is designed for applications requiring transient
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OT-23
GDE 13a DIODE
diode marking GDE 38
diode 009 6V8A
marking diode 47C sot23
NEC D 882 p
GEX 36A DIODE
Diode Gfg 6f
MOTOROLA 727 36A
Diode GFP 56A
GFM 16A
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huf75337g3
Abstract: 75337S
Text: HUF75337G3, HUF75337P3, HUF75337S3, HUF75337S3S HARRIS S E M I C O N D U C T O R 62A, 55V, 0.014 Ohm, N-Channel UltraFET Power MOSFETs January 1998 Features ^ • 62A, 55V M These N-Channel power MOS • Ultra Low On-Resistance, ros ON = • Diode Exhibits Both High Speed and Soft Recovery
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OCR Scan
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HUF75337G3,
HUF75337P3,
HUF75337S3,
HUF75337S3S
TB334,
1-800-4-HARRIS
huf75337g3
75337S
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