BT 1496
Abstract: 34N80 diode 931 p 7
Text: HiPerFETTM Power MOSFETs Single DieMOSFET IXFN 34N80 N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr RDS on D S Symbol Test Conditions VDSS TJ = 25°C to 150°C 800 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 800 V VGS VGSM Continuous Transient
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34N80
BT 1496
34N80
diode 931 p 7
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National Telephone Services
Abstract: No abstract text available
Text: N DIEmentions SURVEY – GIVE US YOUR COMMENTS AND BE ELIGIBLE TO WIN AN NEC READY 120LT NOTEBOOK PC. To help keep you well informed about National’s Die Products offerings, we’d like to know a little about you and your use of die products. Please complete this survey, fax it to us at 1-207-541-6140 U.S.A. . A drawing will be held from among
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120LT
National Telephone Services
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Untitled
Abstract: No abstract text available
Text: HiPerFETTM Power MOSFETs Single DieMOSFET IXFN 34N80 N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr VDSS = 800 V ID25 = 34 A RDS on = 0.24 W D trr £ 250 ns Preliminary data sheet S Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C
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34N80
OT-227
E153432
125OC
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Untitled
Abstract: No abstract text available
Text: Ando Electric Co., Ltd. Korea Fxp Limted,Inc.Mr.Geary Africa 2265 Wetwood Blvd #588,Los Angeles,Ca 90064 Ando Europe B. V. Headquarters Dalsteindreef 57-77 1112 XC Diemen The Netherlands Seoul Electronics co.,Ltd. 222-2 Hongje-dong,Seodaemooon-ku,Seoul
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Honm4-5141
y1000
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Untitled
Abstract: No abstract text available
Text: Plastic Packages for Integrated Circuits Package Outline Drawing V256.17x17C 256 PLASTIC BALL GRID ARRAY PACKAGE PBGA Rev 0, 6/13 Ø0.50(3X). REF COMMON SYMBOL DIEMENSIONS 1 2 3 4 5 6 7 8 9 10 1112 13 14 15 16 Package PBGA Body Size X D 17.00 Y E 17.00 X
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17x17C
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Untitled
Abstract: No abstract text available
Text: 211 N. First Street 612-849-6205 Minneapolis, MN. 55401 www.soberton.com [email protected] PRODUCT NAME ELECTRET CONDENSER MICROPHONE PART NUMBER DIEMESION TYPE EM6050P Φ6.0x5.0mm PIN APPROVED BY CHECKED BY ISSUED BY Daniel Liu Max Pong Ryan Wei 50 100
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EM6050P
EM6050P-42C10
33-LF
100mm
205mm
105mm
550mm
230mm
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Untitled
Abstract: No abstract text available
Text: HiPerFETTM Power MOSFETs Single DieMOSFET IXFN 34N80 N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr VDSS = 800 V ID25 = 34 A RDS on = 0.24 W D trr £ 250 ns Preliminary data sheet S Symbol Test Conditions Maximum Ratings VDSS T J = 25°C to 150°C
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34N80
OT-227
E153432
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34N80
Abstract: 125OC 34N8
Text: HiPerFETTM Power MOSFETs Single DieMOSFET IXFN 34N80 N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr VDSS = 800 V ID25 = 34 A RDS on = 0.24 W D trr £ 250 ns Preliminary data sheet S Symbol Test Conditions Maximum Ratings VDSS T J = 25°C to 150°C
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34N80
34N80
125OC
34N8
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Untitled
Abstract: No abstract text available
Text: Cooling to keep your Key Chips Alive Guy Diemunsch Aavid Thermalloy 70 Commercial Street, Suite 200 Concord, NH 03301 USA Abstract: plenty of cooling technologies are available, they can be used to spread the heat, conduct it to or exchange it with the cold source. We
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Peltier Thermo
Abstract: No abstract text available
Text: Power Thermal Solution Solutions Division Cooling to keep your Key Chips Alive Guy Diemunsch Aavid Thermalloy diemunsch[email protected] Agenda Power Thermal Solution Solutions Division From the Chip to the Fluid The story of conductivity and heat density Technologies and Heat Transfer coefficients
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DS32ELX0124
Abstract: DS32ELX0421 HDMI Fiber HDMI to SDI serializer AN-1887
Text: National Semiconductor Application Note 1887 Nate Unger, Rodger Diemer September 12, 2008 1.0 Introduction During initialization, the data valid line to the serializer is set high. This sends IDLE characters from the serializer to the deserializer over each link. In response, the deserializer sets
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AN-1887
DS32ELX0124
DS32ELX0421
HDMI Fiber
HDMI to SDI serializer
AN-1887
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VFIR
Abstract: TFDU4300 TFBS4711 TFBS5614 TFBS5617 TFBS5711 TFBS6614 TFDU4100 TFDU5103 TFDU5107
Text: VISHAY Vishay Semiconductors Transceivers for Every Application Product Diemensions LxWxH Pins mm3 Pad Pitch Idle Shutdown Supply Current Current Transmit Distance Operating Voltage Logic Voltage Supply (V) (mm) (mA) (µA) (m) (V) Features Transceivers Recommended for New Designs
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TFDU4100
TFDU4300
TFBS4711
TFDU8108
OIM4232
14-May-04
VFIR
TFDU4300
TFBS4711
TFBS5614
TFBS5617
TFBS5711
TFBS6614
TFDU4100
TFDU5103
TFDU5107
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RAMB16BWERs
Abstract: AN1971 SPARTAN-3A 1800 SMPTE-424 digital clock using gates C259C digital clock using logic gates SPARTAN-3A DSP 1800A Xilinx Spartan 6 Eval Kit sdi converter
Text: National Semiconductor Application Note 1971 Rod Diemer, Nate Unger May 6, 2009 Introduction HD portion of SMPTE 299. Below is a list of SDXILEVK FPGA IP features. • Standalone video generator with internal test patterns and standalone video termination
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LMH0340
AN-1971
RAMB16BWERs
AN1971
SPARTAN-3A 1800
SMPTE-424
digital clock using gates
C259C
digital clock using logic gates
SPARTAN-3A DSP 1800A
Xilinx Spartan 6 Eval Kit
sdi converter
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F-SW32
Abstract: Sn96 soldering wire
Text: ssAc 2010 SMD- Lötdrahtfür feinsteLötstellenmit 3 Metallen:Zinn - Silber - KuPfer SMD Solderingwire for smallestsoldering jointswith 3 metals:tin - silver- copper der Bauteileerschwert DieMiniaturisierung im von Kleinstbauteilen das Reoarieren Handlötbereich.
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2010istvergleichbar
SSAC2010
F-SW32
Sn96
soldering wire
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SMT pitch roadmap
Abstract: bare die
Text: N DEDICATED W elcome to National Semiconductor’s DIEmentions. Within these pages is information on how National is supporting the growing need for bare die, Known Good Die KGD , flexible processing flows, and assorted shipping carriers. In DIEmentions will be the latest information on die and packaging availability. There will be
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Abstract: No abstract text available
Text: TL2218-285, TL2218-285Y EXCALIBUR CURRENT-MODE SCSI TERMINATOR SLVS072C – DECEMBER 1992 – REVISED OCTOBER 1995 available features • • • • • • • • Fully Integrated 9-Channel SCSI Termination No External Components Required Maximum Allowed Current Applied at First
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TL2218-285,
TL2218-285Y
SLVS072C
TL2218-285
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XP1073-BD
Abstract: xp1073 DM6030HK XP107
Text: 34.0-37.0 GHz GaAs MMIC Power Amplifier P1073-BD February 2010 - Rev 16-Feb-10 Features Ka-Band 6W Power Amplifier 22.0 dB Small Signal Gain +37.0 dBm Pulsed Saturated Output Power 24% Power Added Efficiency PAE % 100% On-Wafer RF, DC and Output Power Testing
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P1073-BD
16-Feb-10
MIL-STD-883
XP1073-BD
XP1073-BD
xp1073
DM6030HK
XP107
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Untitled
Abstract: No abstract text available
Text: TL2218-285, TL2218-285Y EXCALIBUR CURRENT-MODE SCSI TERMINATOR SLVS072C – DECEMBER 1992 – REVISED OCTOBER 1995 available features • • • • • • • • Fully Integrated 9-Channel SCSI Termination No External Components Required Maximum Allowed Current Applied at First
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TL2218-285,
TL2218-285Y
SLVS072C
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Untitled
Abstract: No abstract text available
Text: r-0• 2E6TÖ88E09T 2EIOMUM0 «esCHOTZT M KM C O Pm C H T »990 TECHNISCHEM « » T SCHRiTT DIEMEN. 0 E - A/#> DEUTSCHLAHO «M9N A U E flCCKTi VOMEHJU.TEM Q D 1 pm POLZ. »HO L±Q. 4 « am * HAi. t£H Wtft UNS VOR K *Lftft£ «OtfUSE «DREHT A ’ 4 5
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88E09T
L0TSE17E»
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Untitled
Abstract: No abstract text available
Text: REVISIONS SYM ZO NE EC N , D K1 Q JO1 00 ERN PLATING NO. REVISED ADD DIEMNSIONS FOR SHIELD BOARD LOCK E APPRD. DATE L.C. A ug4/09 JUL25/12 S.MUGAN '-L 0 O .9 2 ± O . 0 5 !i [0 .0 3 6 ± .0 0 2 ] \ - 0 - \ O . 1 O \ w \ H 0 L E 4 R E Q 'D 0 2 .3 O ± O .O 5
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ug4/09
JUL25/12
JUL31
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A76 battery
Abstract: 0B4 DC-DC
Text: in ix Y s HiPerFET Power MOSFETs Single DieMOSFET ix f n 34N80 V.DSS I D25 RDS on N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Lowtrr = 800 V = 34 A = 0.24 f t trr <250 ns Preliminary data sheet Symbol Test Conditions V„ss Vocn Tj =25°C to 150°C
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34N80
A76 battery
0B4 DC-DC
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Untitled
Abstract: No abstract text available
Text: Ì 4 NICHT 5IND VERMASSTE KANTEN N I C HT MAßSTÄBLICH ÄNDERUNGEN N ISCHEN BEHALTEN X IN LZ Ln PO PRO L CD 1RF I HEI CM CO +0. 3 - . 1 D IE DE M UNS 2 ZEICHNUNG TECH FO RTSC H RITT W IR Í 3 GESCHÜTZT (C^COPY'R I G H T DIEM EN, AMR VOR ALLE DEUTSCHLAND
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AMP-EN-554
AH5200
G02U51
DEPT5200
AH5200
K829576
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Untitled
Abstract: No abstract text available
Text: MOLDED DIALLYL INSULATED TERMINALS DIALLYL PHTHALATE INSULATED TERMINALS M A T E R IA L S : D-:ai:yl P d h T a ts is recom m ended f ' co n tin u o u s d u ty tem ps up to 350° F . i t has a hiqh diem ctr breakdow n and nas r; 94 VO U P auny. T e rm in a l: Brass per QQ-B-626. A lloy 360
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QQ-B-626.
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Untitled
Abstract: No abstract text available
Text: □ IXYS H H ifl JL æ* X HiPerFET Power MOSFETs Single DieMOSFET ix f n 34N80 v , DSS ^D25 N-Channel Enhancement Mode Avalanche Rated, Highdv/dt, Lowtrr R DS on = 800 V = 34 A = 0.24 Q trr < 250 ns Preliminary data sheet Maximum Ratings Symbol Test C onditions
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34N80
OT-227
E153432
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