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ROHM Semiconductor SCT4026DEC11 750V, 26M, 3-PIN THD, TRENCH-STR
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SCT4026DEC11	Tube	4,887		1	1 $23.17 10 $23.17 100 $14.75033 1000 $23.17 10000 $23.17	Buy Now
Mouser Electronics	SCT4026DEC11		672			1 $19.16 10 $18.17 100 $18.17 1000 $18.17 10000 $18.17	Buy Now
Newark	SCT4026DEC11	Bulk	440		1	1 $21.4 10 $19.02 100 $14.22 1000 $14.18 10000 $14.18	Buy Now
TTI	SCT4026DEC11	Tube	450		50	1 - 10 - 100 $18.17 1000 $18.17 10000 $18.17	Buy Now
Avnet Asia	SCT4026DEC11			32 Weeks	450	1 - 10 - 100 - 1000 - 10000 -	Get Quote

Chip1Stop	SCT4026DEC11	Tube	834			1 $19.5 10 $15.2 100 $13.2 1000 $11.9 10000 $11.9	Buy Now
New Advantage Corporation	SCT4026DEC11		450		1	1 - 10 - 100 - 1000 $16.14 10000 $16.14	Buy Now
ROHM Semiconductor SCT4045DEC11 750V, 45M, 3-PIN THD, TRENCH-STR
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SCT4045DEC11	Tube	4,206		1	1 $15.78 10 $11.148 100 $11.148 1000 $15.78 10000 $15.78	Buy Now
Mouser Electronics	SCT4045DEC11		747			1 $15.4 10 $11.15 100 $10.83 1000 $8.34 10000 $8.34	Buy Now
Newark	SCT4045DEC11	Bulk	415		1	1 $14.41 10 $10.55 100 $9.42 1000 $8.67 10000 $8.67	Buy Now
TTI	SCT4045DEC11	Tube	450		50	1 - 10 - 100 $10.7 1000 $8.34 10000 $8.34	Buy Now
Chip1Stop	SCT4045DEC11	Tube	797			1 $14.4 10 $10.7 100 $8.91 1000 $7.66 10000 $7.66	Buy Now

New Advantage Corporation	SCT4045DEC11		450		1	1 - 10 - 100 - 1000 $10.93 10000 $10.93	Buy Now
ROHM Semiconductor SCT4013DEC11 750V, 105A, 3-PIN THD, TRENCH-ST
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SCT4013DEC11	Tube	361		1	1 $35.46 10 $35.46 100 $23.43567 1000 $35.46 10000 $35.46	Buy Now
Mouser Electronics	SCT4013DEC11		387			1 $35.46 10 $35.16 100 $23.3 1000 $23.3 10000 $23.3	Buy Now
Newark	SCT4013DEC11	Bulk	445		1	1 $37.77 10 $35.44 100 $29.36 1000 $28.28 10000 $28.28	Buy Now
TTI	SCT4013DEC11	Tube			450	1 - 10 - 100 - 1000 $23.29 10000 $23.29	Buy Now
Avnet Silica	SCT4013DEC11			31 Weeks	450	1 - 10 - 100 - 1000 - 10000 -	Buy Now

Chip1Stop	SCT4013DEC11	Tube	694			1 $18.6 10 $14.1 100 $13.1 1000 $12.3 10000 $12.3	Buy Now
New Advantage Corporation	SCT4013DEC11		450		1	1 - 10 - 100 - 1000 $30.1 10000 $30.1	Buy Now
Abracon Corporation AMPMDEC-11.0592T MEMS Crystal Oscillator 11.0592MHz ?50ppm 4-Pin SMD T/R - Tape and Reel (Alt: AMPMDEC-11.0592T)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	AMPMDEC-11.0592T	Reel			1,000	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Mouser Electronics	AMPMDEC-11.0592T					1 - 10 - 100 - 1000 $1.11 10000 $1.06	Get Quote
Avnet Abacus	AMPMDEC-11.0592T			113 Weeks	1,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Abracon Corporation AMPMDEC-11.2896T MEMS Crystal Oscillator 11.2896MHz ?50ppm 4-Pin SMD T/R - Tape and Reel (Alt: AMPMDEC-11.2896T)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	AMPMDEC-11.2896T	Reel			1,000	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Mouser Electronics	AMPMDEC-11.2896T					1 - 10 - 100 - 1000 $1.11 10000 $1.06	Get Quote
Avnet Abacus	AMPMDEC-11.2896T			113 Weeks	1,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now

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DEC11 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: HEDFM103G . HEDFM107G 1.0 Amp. Miniature Glass Passivated Ultrafast Bridge Rectifier DFM Current 1.0 A Voltage 200 V to 1000 V FEATURES Ultrafast reverse recovery time for high frequency Ideal for automated insertion High forward surge current capability	Original	HEDFM103G HEDFM107G 2002/95/EC 2002/96/EC J-STD-020, MIL-STD-750 J-STD-002 JESD22-B102. Dec-11	PDF
Transistor BFR 90 Abstract: F1510 Q62702-F1510 Transistor BFR 900mhz 193W Text: BFR 193W NPN Silicon RF Transistor • For low noise, high-gain amplifiers up to 2GHz • For linear broadband amplifiers • fT = 8GHz F = 1.3dB at 900MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code	Original	900MHz OT-323 Q62702-F1510 Dec-11-1996 Transistor BFR 90 F1510 Q62702-F1510 Transistor BFR 900mhz 193W	PDF
BFR106 Abstract: Q62702-F1219 GMA marking Transistor BFR 80 BFr pnp transistor Text: BFR 106 NPN Silicon RF Transistor • For low noise, high-gain amplifiers • For linear broadband amplifiers • Special application: antenna amplifiers • Complementary type: BFR 194 PNP ESD: Electrostatic discharge sensitive device, observe handling precaution!	Original	OT-23 Q62702-F1219 900MHz Dec-11-1996 BFR106 Q62702-F1219 GMA marking Transistor BFR 80 BFr pnp transistor	PDF
80846 Abstract: 022241 gummel Text: BFP 81 NPN Silicon RF Transistor • For low-noise amplifiers up to 2GHz at collector currents from 0.5 mA to 20 mA. ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration Package BFP 81 SOT-143	Original	OT-143 Q62702-F1611 900MHz Dec-11-1996 80846 022241 gummel	PDF
Untitled Abstract: No abstract text available Text: FS2JI.FS2MI 3.0 Amp. Surface Mount Glass Passivated Rectifier DO-214AA / SMB Current 3.0 A Voltage 600 V to 1000 V R FEATURES Low profile package Ideal for automated placement Low power losses, high efficiency High surge current capability	Original	DO-214AA 2002/95/EC 2002/96/EC J-STD-020, MIL-STD-750 J-STD-002 Dec-11	PDF
Untitled Abstract: No abstract text available Text: HEDFM103G . HEDFM107G 1.0 Amp. Miniature Glass Passivated Ultrafast Bridge Rectifier Current 1.0 A Voltage 200 V to 1000 V DFM FEATURES Ultrafast reverse recovery time for high frequency Ideal for automated insertion High forward surge current capability	Original	HEDFM103G HEDFM107G 2002/95/EC 2002/96/EC J-STD-020, MIL-STD-750 J-STD-002 JESD22-B102. Dec-11	PDF
Q62702-F1494 Abstract: No abstract text available Text: BFR 280W NPN Silicon RF Transistor • For low noise, low-power amplifiers in mobile communication systems pager, cordless telephone at collector currents from 0.2mA to 8mA • fT = 7.5GHz F = 1.5dB at 900MHz ESD: Electrostatic discharge sensitive device, observe handling precaution!	Original	900MHz OT-323 Q62702-F1494 Dec-11-1996 Q62702-F1494	PDF
Q62702-F1490 Abstract: No abstract text available Text: BFR 180W NPN Silicon RF Transistor • For low-power amplifiers in mobile communication systems pager at collector currents from 0.2mA to 2.5mA • fT = 7GHz F = 2.1dB at 900MHz ESD: Electrostatic discharge sensitive device, observe handling precaution!	Original	900MHz OT-323 Q62702-F1490 Dec-11-1996 Q62702-F1490	PDF
Untitled Abstract: No abstract text available Text: FUS1A.FUS1M 1.5 Amp. Surface Mount Glass Passivated Ultrafast Recovery Rectifier Current 1.5 A at 55ºC Voltage 50 to 1000 V R DO-214AC / SMA FEATURES Low profile package Ideal for automated placement Ultrafast recovery time for high efficiency	Original	DO-214AC 2002/95/EC 2002/96/EC J-STD-020, MIL-STD-750 Dec-11	PDF
Untitled Abstract: No abstract text available Text: HEDFS103G . HEDFS107G 1.0 Amp. Miniature Glass Passivated Ultrafast Surface Mount Bridge Rectifier DFS Current 1.0 A Voltage 200 V to 1000 V FEATURES Ultrafast reverse recovery time for high frequency Ideal for automated placement High forward surge current capability	Original	HEDFS103G HEDFS107G 2002/95/EC 2002/96/EC J-STD-020, MIL-STD-750 J-STD-002 JESD22-B102. Dec-11	PDF
1bs sot323 Abstract: BC8488 BC857W BC849CW BC858W BC859W BC860W VSO05561 BC846AW BC846BW Text: BC846W.BC850W NPN Silicon AF Transistors For AF input stages and driver applications 3 High current gain Low collector-emitter saturation voltage Low noise between 30 Hz and 15 kHz Complementary types: 2 BC856W, BC857W, BC858W 1 BC859W, BC860W PNP	Original	BC846W. BC850W BC856W, BC857W, BC858W BC859W, BC860W VSO05561 BC846AW OT323 1bs sot323 BC8488 BC857W BC849CW BC858W BC859W BC860W VSO05561 BC846AW BC846BW	PDF
BC846W Abstract: BC847W BC848W BC849W BC850W BC856AW BC856BW BC856W BC857AW BC860W Text: BC856W.BC860W PNP Silicon AF Transistors For AF input stages and driver applications 3 High current gain Low collector-emitter saturation voltage Low noise between 30 Hz and 15 kHz Complementary types: 2 BC846W, BC847W, BC848W 1 BC849W, BC850W NPN	Original	BC856W. BC860W BC846W, BC847W, BC848W BC849W, BC850W VSO05561 BC856AW OT323 BC846W BC847W BC848W BC849W BC850W BC856AW BC856BW BC856W BC857AW BC860W	PDF
P4C1024 Abstract: No abstract text available Text: P4C1024 HIGH SPEED 128K x 8 DUAL CHIP ENABLE CMOS STATIC RAM FEATURES High Speed Equal Access and Cycle Times — 15/20/25/35 ns (Commercial/Industrial) — 20/25/35/45/55/70/85/100/120 ns (Military) Single 5 Volts ±10% Power Supply Easy Memory Expansion Using CE1, CE2 and OE	Original	P4C1024 --32-Pin	PDF
sr206 diode Abstract: diode Sr 206 SR210 Text: SR202 - SR215 2.0 Amp. Schottky Barrier Rectifier Current 2.0 A Voltage 20 V to 150 V DO-204AC / DO-15 FEATURES Low power losses, high efficiency High surge current capability High frequency operation Guarding for overvoltage protection Low forward voltage drop	Original	SR202 SR215 DO-204AC DO-15 2002/95/EC 2002/96/EC DO-15. MIL-STD-750 J-STD-002 sr206 diode diode Sr 206 SR210	PDF

Untitled Abstract: No abstract text available Text: DF-SA 1.0 Amp. Miniature Glass Passivated Single-Phase Surface Mount Bridge Rectifier Current 1.0 Amp. at 40ºC Voltage 600 V to 1000 V DFS FEATURES Ideal for automated placement High forward surge current capability Solder dip 260ºC, 10s Component in accordance to RoHS 2002/95/EC	Original	2002/95/EC 2002/96/EC J-STD-020, MIL-STD-750 J-STD-002 JESD22-B102. Dec-11	PDF
BC8488 Abstract: H12E BC848 equivalent 1bs sot323 Text: BC846W.BC850W NPN Silicon AF Transistors For AF input stages and driver applications 3 High current gain Low collector-emitter saturation voltage Low noise between 30 Hz and 15 kHz Complementary types: 2 BC856W, BC857W, BC858W 1 BC859W, BC860W PNP	Original	BC846W. BC850W BC856W, BC857W, BC858W BC859W, BC860W VSO05561 BC846AW BC846BW BC8488 H12E BC848 equivalent 1bs sot323	PDF
Untitled Abstract: No abstract text available Text: WM8234 w 140MSPS 6-Channel AFE with Sensor Timing Generation and LVDS/CMOS Data Output DESCRIPTION FEATURES The WM8234 is a 16-bit analogue front end/digitiser IC which processes and digitises the analogue output signals from CCD sensors or Contact Image Sensors CIS at pixel	Original	WM8234 140MSPS WM8234 16-bit 23MSPS. 280mA	PDF
Untitled Abstract: No abstract text available Text: WM8233 w 210MSPS 6-Channel AFE with Sensor Timing Generation and LVDS/CMOS Data Output DESCRIPTION FEATURES The WM8233 is a 16-bit analogue front end/digitiser IC which processes and digitises the analogue output signals from CCD sensors or Contact Image Sensors CIS at pixel	Original	WM8233 210MSPS WM8233 16-bit 35MSPS. 350mA	PDF
AK8111 Abstract: FCXO-05 Text: AKD8141 ＆ AK811x ver.2 AK8141&AK811x評価ボード AKD8141_811x AK811x 評価用概要 AKD8141_8111x評価ボードはAK8141及び AK8111x製品共通の評価ボードです。オーダリングガイド  AKD8141_811x_ver.2 ◆ 対象製品 1 AK8141	Original	AKD8141 AK811x AK8141 AK811xè AKD8141 AK811x 8111xè AK8141å AK8111xè AK8111 FCXO-05	PDF
Untitled Abstract: No abstract text available Text: B D REVISIONS SYM ZONE -S 3 - .6 2 0 .5 4 4 [1 5 .7 5 ] [1 3 .8 3 ] 105 .7 2 2 [1 8 .3 4 ] [2 .6 7 ] TYP. 4 ECN, ERN NO. DATE APPRD. /A B PROPOSAL PROPOSAL 0 6 /0 1 /1 1 L CHAN JAN 18,07 L CHAN C PROPOSAL APR 9 ,0 9 L.CHAN DEC11 /1 2 L.CHAN ADDING KEEP-OUT ZONE	OCR Scan	DEC11	PDF
Untitled Abstract: No abstract text available Text: 4 T H IS D R A W IN G IS 3 U N P U B L IS H E D . RELEASED FOR ALL 2 P U B L IC A T IO N R IG H T S LOC D IS T RESERVED. REVISIONS 50 AF D E S C R IP T IO N R EVISED PER E C R - 1 1-01 8063 2 1 DEC11 DWN APVD KH PD D D 23.24 -[.9 15] MAX CONTINUOUS STRIP ON	OCR Scan	DEC11	PDF
Untitled Abstract: No abstract text available Text: R E V IS IO N S SYM ERN NO. PROPOSAL DWG 4 .60 0 [1 5 .2 5 ] ECN, ZO NE .810 [2 0 .5 7 ] APPRD. DATE DEC11/08 L.CHAN .415 [1 0 .5 5 ] FRONT VIEW SIDE VIEW .10 0 [2 .5 4 ] TYP. .05 0 [1 .2 7 ] TYP. 0,O35±.OO2 [0O .89±O .O 5] HOLES 10 REQ’ D r .100 [2 .5 4 ]	OCR Scan	DEC11/08 RJE09	PDF
Untitled Abstract: No abstract text available Text: m i c r o e l e c t r o n i c s group Preliminary Data Sheet December 1997 Lucent Technologies Bell Labs Innovations TEC03264 32-Channel Echo Canceler Features Applications Overall Device • Digital terrestrial communication networks ■ Dual-convergence voice band echo canceler	OCR Scan	TEC03264 32-Channel 64-clear 5-2132r 160-Pin DS98-036TIC DS97-152TIC	PDF
5252 F Abstract: "5252 F" THR15 H-38-9 SVTD "switching office" svts 052 Motorola 0X69 TEC032642 ATM H008 Text: Data Sheet August 1999 microelectronics group Lucent Technologies Bell Labs Innovations TEC03264 32-Channel Echo Canceller Features Applications Overall Device • ■ ■ ■ ■ Dual-convergence voiceband echo canceller EC . ■ 32 independent and individually controlled echo	OCR Scan	TEC03264 32-Channel 64-clear. DS99-241PDH DS98-409TIC) 5252 F "5252 F" THR15 H-38-9 SVTD "switching office" svts 052 Motorola 0X69 TEC032642 ATM H008	PDF

DEC11 Search Results

DEC11 Price and Stock

ROHM Semiconductor SCT4026DEC11

ROHM Semiconductor SCT4045DEC11

ROHM Semiconductor SCT4013DEC11

Abracon Corporation AMPMDEC-11.0592T

Abracon Corporation AMPMDEC-11.2896T

DEC11 Datasheets Context Search

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Transistor BFR 90

BFR106

80846

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Q62702-F1494

Q62702-F1490

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1bs sot323

BC846W

P4C1024

sr206 diode

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BC8488

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AK8111

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5252 F