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    DD312 Price and Stock

    IXYS Corporation MDD312-18N1

    DIODE MODULE GP 1800V 310A Y1-CU
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    DigiKey MDD312-18N1 Box 6 1
    • 1 $140.55
    • 10 $140.55
    • 100 $135.56833
    • 1000 $135.56833
    • 10000 $135.56833
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    Mouser Electronics MDD312-18N1 2
    • 1 $140.55
    • 10 $140.55
    • 100 $135.56
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    TTI MDD312-18N1 Box 3
    • 1 -
    • 10 $138.85
    • 100 $135.57
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    TME MDD312-18N1 1
    • 1 $207.49
    • 10 $184.32
    • 100 $184.32
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    IXYS Corporation MDD312-12N1

    DIODE MODULE GP 1200V 310A Y1-CU
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    DigiKey MDD312-12N1 Box 2 1
    • 1 $125.24
    • 10 $125.24
    • 100 $118.62417
    • 1000 $118.62417
    • 10000 $118.62417
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    Mouser Electronics MDD312-12N1 3
    • 1 $125.21
    • 10 $125.21
    • 100 $118.62
    • 1000 $118.62
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    Newark MDD312-12N1 Bulk 1
    • 1 $130.25
    • 10 $125.66
    • 100 $123.36
    • 1000 $123.36
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    TTI MDD312-12N1 Box 3
    • 1 -
    • 10 $123
    • 100 $118.62
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    TME MDD312-12N1 1
    • 1 $131.66
    • 10 $122.18
    • 100 $122.18
    • 1000 $122.18
    • 10000 $122.18
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    IXYS Corporation MDD312-16N1

    DIODE MODULE GP 1600V 310A Y1-CU
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    DigiKey MDD312-16N1 Box 2 1
    • 1 $135.46
    • 10 $135.46
    • 100 $129.90916
    • 1000 $129.90916
    • 10000 $129.90916
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    Mouser Electronics MDD312-16N1 6
    • 1 $130.52
    • 10 $130.52
    • 100 $127.4
    • 1000 $127.4
    • 10000 $127.4
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    TTI MDD312-16N1 Box 3
    • 1 -
    • 10 $129.91
    • 100 $129.91
    • 1000 $129.91
    • 10000 $129.91
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    TME MDD312-16N1 1
    • 1 $201.17
    • 10 $178
    • 100 $178
    • 1000 $178
    • 10000 $178
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    New Advantage Corporation MDD312-16N1 240 1
    • 1 -
    • 10 -
    • 100 $175.22
    • 1000 $163.54
    • 10000 $163.54
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    IXYS Corporation MDD312-20N1

    DIODE MODULE GP 2000V 310A Y1-CU
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    DigiKey MDD312-20N1 Box 3
    • 1 -
    • 10 $146.85333
    • 100 $146.85333
    • 1000 $146.85333
    • 10000 $146.85333
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    Mouser Electronics MDD312-20N1
    • 1 $146.86
    • 10 $146.86
    • 100 $146.85
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    TTI MDD312-20N1 Box 3
    • 1 -
    • 10 $146.85
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    TME MDD312-20N1 1
    • 1 $226.45
    • 10 $200.12
    • 100 $200.12
    • 1000 $200.12
    • 10000 $200.12
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    IXYS Corporation MDD312-14N1

    DIODE MODULE GP 1400V 310A Y1-CU
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    DigiKey MDD312-14N1 Box 3
    • 1 -
    • 10 $124.26667
    • 100 $124.26667
    • 1000 $124.26667
    • 10000 $124.26667
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    Mouser Electronics MDD312-14N1
    • 1 $124.27
    • 10 $124.27
    • 100 $124.26
    • 1000 $124.26
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    TTI MDD312-14N1 Box 3
    • 1 -
    • 10 $124.27
    • 100 $124.27
    • 1000 $124.27
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    TME MDD312-14N1 1
    • 1 $189.58
    • 10 $168.52
    • 100 $168.52
    • 1000 $168.52
    • 10000 $168.52
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    DD312 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    DD312

    Abstract: Constant Current LED Driver
    Text: DD312 Version : PRE.001 Issue Date : 2005/8/15 File Name : SP-DD312-PRE.001.doc Total Pages : 14 HIGH CONSTANT CURRENT LED DRIVER with ERROR DETECTION 點晶科技股份有限公司 SILICON TOUCH TECHNOLOGY INC. 新竹市科學園區展業一路 9 號 7 樓之 1


    Original
    PDF DD312 SP-DD312-PRE Tel886-3-5645656 Fax886-3-5645626 DD312 Constant Current LED Driver

    Untitled

    Abstract: No abstract text available
    Text: DD312 Version : A.002 Issue Date : 2010/10/05 File Name : SP-DD312-A.002.doc Total Pages : 22 HIGH CONSTANT CURRENT LED DRIVER with ERROR DETECTION 新竹市科學園區展業一路 9 號 7 樓之 1 SILICON TOUCH TECHNOLOGY INC. 9-7F-1, Prosperity Road I, Science Based Industrial Park,


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    PDF DD312 SP-DD312-A DD312

    dd312

    Abstract: SOP-8-150-1
    Text: DD312 Version : A.001 Issue Date : 2007/07/18 File Name : SP-DD312-A.001.doc Total Pages : 20 HIGH CONSTANT CURRENT LED DRIVER with ERROR DETECTION 新竹市科學園區展業一路 9 號 7 樓之 1 SILICON TOUCH TECHNOLOGY INC. 9-7F-1, Prosperity Road I, Science Based Industrial Park,


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    PDF DD312 SP-DD312-A Tel886-3-5645656 Fax886-3-5645626 DD312 SOP-8-150-1

    dd104 murata

    Abstract: 473z 104z 25v 2KV 223Z DD104 989 104Z 500V f 104 z DD104 224Z F472Z
    Text: このカタログはNo.C83-3をムラタのwebサイトよりPDF形式でダウンロードしたものです。 No.C83J3.pdf 00.3.15 セラミックコンデンサ12V/16V/25V/50V/500V DD100・DD10・DD300DD400 シリーズ CERAMIC CAPACITORS Cat.No.C83-3


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    PDF C83-3webPDF C83J3 2V/16V/25V/50V/500V DD100 DD300 DD400 C83-3 DD100 dd104 murata 473z 104z 25v 2KV 223Z DD104 989 104Z 500V f 104 z DD104 224Z F472Z

    bcm 4330

    Abstract: telemecanique contactor catalogue A5 GNC mosfet philips ecg master replacement guide Elektronikon II keltron electrolytic capacitors PART NO SELEMA DRIVER MOTOR AC 12v dc EIM Basic MK3 lenze 8600 Atlas copco rc universal 60 min
    Text: NEED IT NOW? BUY REMAN! SEE PAGE lxx xx xvi SOLUTIONS, SOLUTIONS. Q A r e q u a l i t y, c o s t , a n d t i m e i m p o r t a n t to you? A ELECTRICAL SOUTH! Q Do you spend too much of your valuable time dealing with too m a n y d i ff e r e n t r e p a i r v e n d o r s ?


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    PDF

    f103z 1kv

    Abstract: capacitor 223z F223Z 1kv capacitor 223z 1kv ceramic capacitor f103z 2kv capacitor type 104z 50v 104z 25v dd104 murata 223Z DD104 989
    Text: This is the PDF file of catalog No.C83E-3. No.C83E3.pdf 00.4.11 CERAMIC CAPACITORS 12V/16V/25V/50V/500V DD100 •DD10 •DD300 DD400 Series CERAMIC CAPACITORS Murata Manufacturing Co., Ltd. Cat.No.C83E-3 This is the PDF file of catalog No.C83E-3. No.C83E3.pdf 00.4.11


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    PDF C83E-3. C83E3 2V/16V/25V/50V/500V DD100 DD300 DD400 C83E-3 f103z 1kv capacitor 223z F223Z 1kv capacitor 223z 1kv ceramic capacitor f103z 2kv capacitor type 104z 50v 104z 25v dd104 murata 223Z DD104 989

    Untitled

    Abstract: No abstract text available
    Text: 3QE » • 7^2=1237 DD3121S 7 ■ HOMSON £ÿj SGS-THOMSON LtEgïïlïMOOS S 6 _ _ _ -37“ 15 2N4036 S- TH OM SO N MEDIUM-SPEED SWITCH DESCRIPTION The 2N4036 is a silicon planar epitaxial PNP tran­ sistor in Jedec TO-39 metal case. It is intended par­


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    PDF DD3121S 2N4036 2N4036 10KHz

    TLCS-90

    Abstract: No abstract text available
    Text: TO SH IBA TMP90C846 CMOS 8-BIT MICROCONTROLLER TMP90C846F 1. OUTLINE AND CHARACTERISTICS The TMP90C846 is an advanced 8-bit microcontroller developed for application in the control of HDD/FDD high-speed mechanisms. The built-in functions include a high­ speed A/D converter minimum sampling rate: 400ns @ 10MHz with an external start


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    PDF TMP90C846 TMP90C846F TMP90C846 400ns 10MHz) 44-pin QFP44-P-1414D) TMP90C846. TLCS-90

    Untitled

    Abstract: No abstract text available
    Text: D • A235bOS DDBlEEfl 1 M S I E G XX, , SIEMENS AKTIEN GE SEL LSCHAF T-52.-33-5S SAB 82289 Bus Arbiter for SAB 80286 Processors SAB 82289-6 up to 12 MHz SAB 82289 up to 16 MHz • S upports m u ltim aster system bus arbitration protocol • Synchronizes SAB 80286 processor w ith


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    PDF A235bOS -33-5S S07HOLD fl235b05 00312b! T-52-33-55 82289-P Q67020-Y77 82289-6-P Q67120-Y111

    KM6 II

    Abstract: SRAM sheet samsung KM616
    Text: KM 6 1 6 4 0 0 0 A ei cm ELECTRONICS CMOS SRAM 256Kx16 bit High Speed CMOS Static RAM FEATURE SUMMARY GENERAL DESCRIPTION • • • • • • The KM6164000A family is fabricated by SAMSUNG’S advanced CMOS process technology. The family can support various operating


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    PDF 256Kx16 256Kx16 44-TSOP KM6164000A KM6164000A KM6 II SRAM sheet samsung KM616

    473Z

    Abstract: capacitor type 104z 50v capacitor 223z Y5V 104Z 473m 50v 223Z ERIE CAPACITORS U/25/20/TN26/15/850/R/k5u 104z capacitor
    Text: CERAMIC DISC CAPACITORS 12-50 VDC PART NU M B ERING SYSTEM TYPE D D350 T TEM P. C HA R . Y5P LEADS 950 " ~I I CAPACITOR TYPE AND SIZE !— LEAD CONFIG. TEMPERATURE CHARACTERISTICS See lead style chart Temperature Range Y5=-30°C to +85°C MAX. CAP. CHANGE


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    PDF DD305950 Y5V104Z12V DD308950 DD310950 DD312454 474Z12V 16VDC 50VDC DD304950 473Z capacitor type 104z 50v capacitor 223z Y5V 104Z 473m 50v 223Z ERIE CAPACITORS U/25/20/TN26/15/850/R/k5u 104z capacitor

    sab82288

    Abstract: SAB82289 SAB 80286 16 N 82288
    Text: SIEM ENS 47E D • A23SbDS 0 0 3 i n b 3 ■ SIEG SIEMENS AKTI ENGESELLSCHAF " P c Q '3 5 r ö 5 Bus Controller for SAB 80286 Processors SAB 82288 Preliminary SAB 82288-6 up to 12 MHz SAB 82288 up to 16 MHz • Provides com m ands and control fo r local and system bus


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    PDF A23SbDS P-DIP-20 20-pin SAB82288 T-52-33-55 sab82288 SAB82289 SAB 80286 16 N 82288

    Ali 3601

    Abstract: QML-38534 5962-9461403H K 622 3D3
    Text: REVISIONS LTR DESCRIPTION DATE y r - m o -d a APPROVED C A dded case outline Z. C orrected the true dim ensioning table 98-08-13 K.A. C ottongim _ feature fo r case outlines U. X. and Y. -sld_ _


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    PDF

    BFG96

    Abstract: No abstract text available
    Text: P hilips Sem iconductor; bbS3T31 0031ST2 553 M A P X Product specification BFG96 NPN 5 GHz wideband transistor bit N AUER PHILIPS/5ISCRETE DESCRIPTION » PINNING NPN transistor in a 4-lead dual-emitter plastic SOU 03 envelope. DESCRIPTION PIN It is designed for application in


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    PDF bbS3T31 0031ST2 BFG96 BFG32. OT103. BFG96

    Untitled

    Abstract: No abstract text available
    Text: KM68V1002A/AL CMOS S RAM ELECTRONICS 1 2 8 K x 8 B i t High-Speed CMOS Static RAM 3.3V Operating FEATURES GENERAL DESCRIPTION • Fast Access Time 12,15,17,20 ns(Max.) • Low Power Dissipation Standby (TTL) : 20mA(Max.) (CMOS): 5mA(Max.) 0.5mA(Max.) ; L-veronly


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    PDF KM68V1002A/AL KM68V1002A/AL-12 KM68V1002A/AL-15 KM68V1002A/AL-17 KM68V1002A/AL-20 KM68V1002AJ/ALJ 32-SOJ-4Ã KM68V1002AT/ALT004 32-TSO P2-400F

    Untitled

    Abstract: No abstract text available
    Text: KM718V787 CMOS SRAM ELECTRONICS 128K X 18-Bit Synchronous Burst SRAM FEATURES GENERAL DESCRIPTION. • Synchronous Operation. • On-Chip Address Counter. • Write Self-Timed Cycle. • On- Chip Address and Control Registers. • Single 3.3V±5% Power Supply.


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    PDF KM718V787 18-Bit 100-Pin GG313GS

    BFG90A

    Abstract: No abstract text available
    Text: Philips Semiconductors bbS 3^31 0031222 13 T Product specification « A P X £ NPN 5 GHz wideband transistor BFG90A N AMER PHILIPS/DISCRETE DESCRIPTION b'lE D PINNING NPN transistor in a 4-lead dual-emitter plastic SOT103 envelope. PIN It is designed for application in


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    PDF BFG90A OT103 OT103. BFG90A

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TMP47C655/855 CMOS 4-BIT MICROCONTROLLER TMP47C655F, TMP47C855F The 47C655/855 are a h ig h speed a n d h ig h p e rfo rm a n c e 4 - b it sin g le c h ip m ic ro c o m p u te r based on th e TLCS470 CMOS series. The 47C655/855 have LCD d riv e r, DTMF g e n e ra to r a n d la rg e -ca p a city RAM fo r re p e rto ry


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    PDF TMP47C655/855 TMP47C655F, TMP47C855F 47C655/855 TLCS470 TMP47C655F 960kH

    Untitled

    Abstract: No abstract text available
    Text: For Immediate Assistance, Contact Your Local Salesperson BURR - BROW N S E REF1004 1 « I # 1.2V and 2.5V Micropower VOLTAGE REFERENCE FEATURES DESCRIPTION • INITIAL ACCURACY: REF1004-1.2 ±4mV REF1004-2.5 ±20mV • MINIMUM OPERATING CURRENT: REF1004-1.2 10jxA


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    PDF REF1004 REF1004-1 REF1004-2 10jxA REF1004 G0312bS

    Untitled

    Abstract: No abstract text available
    Text: Or, Call Customer Service at 1-800-548-6132 USA Only B U R R - BROW N REG1117 & nan 800mA Low Dropout Positive Regulator 2.85V, 3V, 3.3V, 5V, and Adjustable FEATURES APPLICATIONS • 2.85V, 3V, 3.3V, 5V, and ADJUSTABLE VERSIONS • 2.85V MODEL FOR SCSI-2 ACTIVE


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    PDF REG1117 800mA 800mA OT-223 100MF 17313LS

    Y5P102K

    Abstract: MA2830 LQH3C1R0M04M00 MA2810-1 6003R3 RVG4F03A PLH11L-6003R3 PLA3021A TZB04 TZ03Z500FR169
    Text: DESIGN ENGINEERING KITS CAPACITORS— CHIP MONOLITHIC * • ■ ■ ■ ■ Miniature size Wide capacitance, TC, voltage and tolerance range Industry standard sizes 8mm and 12mm tape and reel for auto-placements Barrier layer termination systems for wave, reflow or vapor


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    PDF GRM39COG010B100AB GRM39COG1R5B1OOAB GRM39COG2R2B1 GRM39COG3R3B1 GRM39COG4R7B1 GRM39COG6R8C1 GRM39COG100D1 GRM39COG150J10OAB GRM39COG220J100 GRM39COG330J100AB Y5P102K MA2830 LQH3C1R0M04M00 MA2810-1 6003R3 RVG4F03A PLH11L-6003R3 PLA3021A TZB04 TZ03Z500FR169

    Untitled

    Abstract: No abstract text available
    Text: HM51W16160 Series HM51W18160 Series 1048576-word x 16-bit Dynamic RAM HITACHI ADE-203-635B Z Rev. 2.0 Dec. 5 ,1 9 9 6 Description The Hitachi HM51W16160 Series, HM51W18160 Series are CMOS dynamic RAMs organized as 1,048,576word x 16-bit. They employ the most advanced CMOS technology for high performance and low power.


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    PDF HM51W16160 HM51W18160 1048576-word 16-bit ADE-203-635B 576word 16-bit.

    qml-38535

    Abstract: 54ALS373 GDFP3-F20
    Text: REVISIONS LTR DESCRIPTION DATE APPROVED Y R -M O -D A C Editorial changes throughout. Convert to military drawing format. Added vendor CAGE numbers 27014 and 18324. Table 1, propagation delay changes. 88-05-03 Michael A. Frye D Changes in accordance with NOR 5962-R080-92. Changes to


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    PDF 5962-R080-92. 5962-R136-96. TG0470Ã qml-38535 54ALS373 GDFP3-F20

    SRAM sheet samsung

    Abstract: 44TSOP KM6 II KM68U4000A 414KM 44-TSOP
    Text: K M6 1 6 V 4 0 0 0 A CMOS SRAM ELECTRONICS 256Kx16 bit Low Power & Low Vcc CMOS Static RAM FEATURE SUMMARY GENERAL DESCRIPTION • Process Technology: 0.4 um CMOS The KM616V4000A and KM616U4000A family are • Organization: 256Kx16 fabricated by SAMSUNG'S advanced CMOS process


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    PDF 256Kx16 256Kx16 KM68V4000A KM68U4000A 44-TSOP KM616V4000A KM616U4000A KM616V4000A 0D312Sb SRAM sheet samsung 44TSOP KM6 II 414KM