IXSH15N120AU1
Abstract: IC-90
Text: IXSH15N120AU1 PRELIMINARY DATA SHEET IGBT with Diode IC25 = 30 A VCES = 1200 V VCE sat = 4.0 V "S" Series - Improved SCSOA Capability C G E Symbol Test Conditions Maximum Ratings V CES T J = 25°C to 150°C 1200 V V CGR T J = 25°C to 150°C; RGE = 1 MΩ
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IXSH15N120AU1
-100A/
D-68619;
IXSH15N120AU1
IC-90
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3ADW000095R0701 DCS400 MANUAL E G
Abstract: ktk variable speed thyristor controller ABB make REC 670 ktk thyristor dc drives manual DCS401 manual temperature controller CHB 702 30 KW 1500rpm ABB DC motor DCS402 abb contactor K22 Project Report of fire alarm using thermistor
Text: DCS Thyristor power converter for DC drive systems 20 to 1000 A 9 to 522 kW Manual DCS 400 II K 1-1 This manual is valid for DCS 400 Rev A including software version 108.0 List of contents MANUAL 1 DCS 400 - the compact-size DC drive . II K 1-3 2 System overview of DCS 400 . II K 2-1
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NCNA-01,
3ADW000095R0701
DCS400
R0701
095R0701A3180000*
3ADW000095R0701 DCS400 MANUAL E G
ktk variable speed thyristor controller
ABB make REC 670
ktk thyristor dc drives manual
DCS401
manual temperature controller CHB 702
30 KW 1500rpm ABB DC motor
DCS402
abb contactor K22
Project Report of fire alarm using thermistor
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Untitled
Abstract: No abstract text available
Text: 4bflfc.E2b G G D 1 7 C11 3ÖT • IXY □IXYS IGBT with Diode IXSN50N60U1 I, CES High Short Circuit SOA Capability CE sat = 53 A = 600 V = 2.5 V 2 ■ 4" é 'T n Symbol Test Conditions VcES T, = 25°C to 150°C 600 V Vo» Tj = 25°C to 150°C; R ^ = 1 MQ
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IXSN50N60U1
OT-227
E72873
D-68619
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1xys
Abstract: IXTN36N50 36N50 E72873 IXTN36N45
Text: • 4bûbE2b 0001Û11 TTñ ■ I X Y □IXYS Pow er M O S F E T IX TN 36N 45 IX TN 36N 50 N-Channel Enhancement Mode Symbol Test Conditions V oss T j = 25°C to 150°C Maximum Ratings IXTN36N45 IXTN36N50 450 500 V V V oc* ^ = 25°C to 150°C ;R es=10kQ 500
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IXTN36N45
IXTN36N50
IXTN36N45
Cto150Â
IXTN36N
D-68619;
1xys
IXTN36N50
36N50
E72873
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Untitled
Abstract: No abstract text available
Text: H b û b 2 2 b 0 0 0 1 Ö 0 3 ^21 I IX Y ID IXYS IG B T w ith D io d e ÌX S N 3 0 N 10 0 A U 1 CES High Short Circuit SOA Capability CE sat = 34 A = 1000 V =4V 2 é * 'T i Symbol Test Conditions V«s Tj = 25°C to 150°C 1000 V v«* Tj = 25°C to 150°C; RGE= 1 M£2
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D-68619;
4bflb22b
D-68619
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ixys dsei 2x61-06C
Abstract: No abstract text available
Text: Mt a b PZ b D D G i a S 3 7 1 T • I X Y D I X Y S DSEI 2x61 Fast Recovery Epitaxial Diodes lFAV = 2x60 A VRRM = 400-600 V tn < 35 ns miniBLOC, SOT-227 B V V 440 540 640 400 500 600 2 • DSEI 2x61-04C DSEI 2x61-05C DSEI 2x61-06C 1 1 o-J H Ho 3 -« 4
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OT-227
2x61-04C
2x61-05C
2x61-06C
D-68619
ixys dsei 2x61-06C
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ixys dsei 2x30-05c
Abstract: ixys dsei 2x30-04c ixys dsei
Text: 4bflb22b O G O ia n D Y I X E H B IIX Y S DSEI 2x30 IFAV DSEI 2x31 VRRM Fast Recovery Epitaxial Diodes 2x30 A 400-600 V < 35 ns miniBLOC, SOT-227 B v RSM V T yp e Typ e V V 440 540 640 400 500 600 Symbol Test Conditions •cavi . TVJ = Tvjm Tc = 85°CT rectangular, 6= 0.5
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4bflb22b
OT-227
2X30-04C
2x31-040
2x30-05C
2x31-050
2x30-060
2x31-060
D-68619
ixys dsei 2x30-05c
ixys dsei 2x30-04c
ixys dsei
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IXGH9090
Abstract: IXYS SP
Text: □ IX Y S IXGH9090 HiPerFAST IGBT with Diode ^C 25 V CES V CE sat Lf i 48 A 600 V 2.7 V 400 ns TO-247AD M axim um R atings S ym b o l T e st C onditions VcES T j = 2 5 'C to 150°C 600 V ^C G R T,J = 2 5 'C to 150” C; Rb t = 1 MQ 600 V V GES Continuous
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IXGH9090
D-68619;
IXYS SP
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IXSN40N60AU1
Abstract: bt 58a E72873 PS-33A 40n60 15-05J
Text: m n b abP-gb O D D l? ^ b7D • I X Y in ix Y S IGBT with Diode IXSN40N60AU1 High Short Circuit SOA Capability 2 * Symbol CCS vCGfl Test Conditions 600 V Tj = 25°C to 150°C; R6£ = 1 M ii 600 V Continuous ±20 V VGEU Transient ±30 V ■cs Tc = 25°C 45
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IXSN40N60AU1
OT-227
D-68619;
bt 58a
E72873
PS-33A
40n60
15-05J
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ixys dsei 2x31-10b
Abstract: No abstract text available
Text: QIXYS 4bflfc>22b 0 0 0 1 0 2 1 TM7 « I X Y Fast Recovery Epitaxial Diodes DSEI 2x30 DSEI 2x31 ^FAV V RRM t_ = 2x30 A = 600-1000 V < 50 ns miniBLOC, SOT-227 B v RSU v rrm V T yp e Type DSEI 2x30-06B DSEI 2x30-08B DSEI 2x30-10B DSEI 2x31-06B DSEI 2x31-08B DSEI 2x31-10B
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OT-227
2x30-06B
2x30-08B
2x30-10B
2x31-06B
2x31-08B
2x31-10B
D-68619
ixys dsei 2x31-10b
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Untitled
Abstract: No abstract text available
Text: Mbôb22b DÜ0n4S 5bl « I X Y □IXYS V10500-12S Advanced Technical Information Hybrid IGBT Power Modules S ym b o l v CES C o n d itio n M ax. R ating 1200 V ±30 V T s = 25°C 1 600 A T s = 65°C 500 A 1200 A T s = 25°C 430 A T S = 25°C , 1ms 860 A 2500
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V10500-12S
85Vces,
125-C
400A/US
D-68619
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150-12SE
Abstract: VIE150-12S FIB5 IXYS IGBT 3kv igbt inverter circuit for induction heating Induction Heating Resonant Inverter
Text: Mfc.fit.22b 0001027 3bS IX Y ISOSMART IG B T M o d u le s \ 1 nixYS 19 93IXYS Corporation IXYS Corporation iibflb22b 0DDlfl2B ST1 • IXY VIE 150-12SE ISOSMART™ Module Description of the ISOSMART™ Module The VIE150-12SE module, shown diagrammatically in Figure 1, is a 1200V, 150A, IGBT
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93IXYS
iibflb22b
150-12SE
VIE150-12SE
POB1180;
D68619
VIE150-12S
FIB5
IXYS IGBT 3kv
igbt inverter circuit for induction heating
Induction Heating Resonant Inverter
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VAJI
Abstract: TI42A
Text: 4bûb22b Ü001Ö03 T21 IX Y lOIXYS IGBT with Diode IXSN30N100AU1 CES High Short Circuit SOA Capability CE sat = 34 A = 1000 V =4V 2 & 4 "T i Symbol Test Conditions V«s T j = 25°C to 150°C 1000 V T j = 25°C to 150°C; RGE = 1 M£2 1000 V Maximum Ratings
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IXSN30N100AU1
OT-227
30jiH
it140
D-68619
VAJI
TI42A
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Untitled
Abstract: No abstract text available
Text: •_4bßb22b 0 0 0 1 Ö2 S 5^2 M I X Y □IXYS Fast Recovery Epitaxial Diodes DSEI 2x61 lFAV = 2x60 A V rrm trr = 600-1000 V < 50 ns miniBLOC, SOT-227 B V v*» V 640 800 1000 600 800 1000 Type p ° ! 3 •- — Symbol Test Conditions 'frms *FAV* 1 Ifmi
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OT-227
2x61-06B
2x61-08B
2x61-10B
D-68619
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Untitled
Abstract: No abstract text available
Text: M 4bfib?.2b O O G l ? ^ b?G • IXY in ix Y S IG B T w ith D io d e IX S N 4 0 N 6 0 A U 1 High Short Circuit SOA Capability lc VCES =45 A = 600 V V « » = 3V 2 ¿ 4 6 T i Symbol Test Conditions VC «ES . Tj = 25°C to 150°C 600 V v COR Tj = 25°C to 150°C; RG£ = 1 M fl
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D-68619;
D00HD2
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IXTN36N50
Abstract: No abstract text available
Text: • 4 b û b 2 2 b O G O l ûl l TTfl ■ IX Y DIXYS Pow er M O S FE T IX T N 3 6 N 4 5 IX T N 3 6 N 5 0 N-Channel Enhancement Mode D cont v¥ p dss DS(on) = 36 A = 450/500 V = 0 .1 2 & R = 0.5 Q Symbol Test Conditions Voss Tj = 25°C to 150°C Maximum Ratings
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IXTN36N45
IXTN36N50
D-68619;
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IXSE502
Abstract: No abstract text available
Text: HbflbSBb DDG13flb 3 ^ • IXY □ IXYS Data Sheet No. 915502A July 1993 SHAFT ENCODER PERIPHERAL INTERFACE IXSE502 Features Direct two-channel Quadrature Inputswith Schmitt Trigger Circuitry X4 Quadrature Detection for High Resolution EXTERNAL EVENT Detection and Latching for
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DDG13flb
15502A
IXSE502
IXSE502
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Untitled
Abstract: No abstract text available
Text: □ I X Y IXSH15N120AU1 S P R E L IM IN A R Y D A T A S H E E T IGBT with Diode ^C 2 5 "S" Series - Improved SCSOA Capability Symbol T est C onditions V CES T j = 2 5 °C to 150°C V CGR T j = 2 5 °C to 150°C ; f^E= 1 M ß V GES V CES V CE sat M axim um Ratings
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IXSH15N120AU1
125-C,
-100A/
1005C,
125-C
D-68619;
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Untitled
Abstract: No abstract text available
Text: 4bôb52b 0001^43 M'I'î B I X Y VI0400-12S Advanced Technical Information Hybrid IGBT Power Modules S ym bol C o n d itio n vCES vGES T s = 2 5°C VCE = 1200V lC25 = 475A M ax. R ating 1200 V ±30 V ^C25 T s = 25°C 475 A ^C6S T s = 65°C 375 A 'cm T s = 25°C , 1 ms
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VI0400-12S
0/60H
400A/us
D-68619
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IXYS IGBT
Abstract: igbt 600V 600A short circuit
Text: QIXYS VI0600-12S Advanced Technical Information VCE= 1200 V Hybrid IGBT Power Modules lc =60A COLLECTOR COLLECTOR KELVIN GATE Symbol Condition V cH S Ts = 25°C Max. Rating v GES >c >c I CM *F 'PM PC Ts = 25°C Ts = 80°C Ts = 25°C , 1ms V V 600 A A A 1200
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VI0600-12S
50/60HZ,
D-68619
Q-68619
IXYS IGBT
igbt 600V 600A short circuit
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IXSN50N60U1
Abstract: 25CC E72873 50N60 50N60U1
Text: 4 b û b 2 2 b □ □ □ 1 7 ‘ìl 3flT • IX Y □IXYS IGBT with Diode IXSN50N60U1 >c V .„ High Short Circuit SOA Capability =53A = 600 V VcE<sa„ = 2-5 V 2 4 S ym bol T e st C o n d itio n s 'T l M axim um R a tin g s VcES T j = 25°C to 150°C 600
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IXSN50N60U1
D-68619
25CC
E72873
50N60
50N60U1
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ixys dsei 2*61-10b
Abstract: ATS1000 ixys dsei 12 IXYS DSEI 2X61-06
Text: 4bfl b22b 0001025 5T2 *IXY □IXYS Fast Recovery Epitaxial Diodes DSEI 2x61 IFAV V t miniBLOC, SOT-227 B v RSM V 640 800 1000 Sym bol V RRM 600 800 1000 2 OSEI 2x61-06B OSEI 2x61-08B DSEI 2x61-10B Ho Maximum Ratings per diode j. t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine
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4bflb22b
OT-227
2x61-06
2x61-08B
2x61-10B
150nsient
D-68619
ixys dsei 2*61-10b
ATS1000
ixys dsei 12
IXYS DSEI 2X61-06
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2x30-10B
Abstract: 2x31-10b ixys dsei 2x31-10b ixys dsei 2x30-10b
Text: MbflL.22b 0001021 T47 « I X Y □IXY S Fast Recovery Epitaxial Diodes DSEI 2x30 DSEI 2x31 ^FAV V RRM t. = 2x30 A = 600-1000 V < 50 ns miniBLOC, SOT-227 B v RSM V 640 800 1000 v rrm T y p e T y p e V 600 800 1000 DSEI 2x30-06B DSEI 2x30-08B DSEI 2x30-10B DSEI 2x31-06B
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OT-227
2x30-06B
2x31-06B
2x30-08B
2x31-08B
2x30-10B
2x31-10B
D-68619
2x31-10b
ixys dsei 2x31-10b
ixys dsei 2x30-10b
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