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Catalog Datasheet	MFG & Type	Document Tags	PDF
AN569 Abstract: D3N02 MMDF3N02HD MMDF3N02HDR2 SMD310 Text: MOTOROLA Order this document by MMDF3N02HD/D SEMICONDUCTOR TECHNICAL DATA Designer's  Data Sheet MMDF3N02HD Medium Power Surface Mount Products TMOS Dual N-Channel Field Effect Transistors Motorola Preferred Device DUAL TMOS POWER MOSFET 3.0 AMPERES 20 VOLTS	Original	MMDF3N02HD/D MMDF3N02HD MMDF3N02HD/D* AN569 D3N02 MMDF3N02HD MMDF3N02HDR2 SMD310	PDF
D3N02 Abstract: MMDF3N02HD Text: MMDF3N02HD Power MOSFET 3 Amps, 20 Volts N−Channel SO−8, Dual These miniature surface mount MOSFETs feature ultra low RDS on and true logic level performance. They are capable of withstanding high energy in the avalanche and commutation modes and the	Original	MMDF3N02HD MMDF3N02HD/D D3N02	PDF
D3N02 Abstract: AN569 MMDF3N02HD MMDF3N02HDR2 Text: MMDF3N02HD Preferred Device Power MOSFET 3 Amps, 20 Volts N–Channel SO–8, Dual These miniature surface mount MOSFETs feature ultra low RDS on and true logic level performance. They are capable of withstanding high energy in the avalanche and commutation modes and the	Original	MMDF3N02HD r14525 MMDF3N02HD/D D3N02 AN569 MMDF3N02HD MMDF3N02HDR2	PDF
E3P102 Abstract: T2-955V e6n02 t9n10e DL135 1086v l1n06c 24 v DC relay 34.51.7 d3n03 20n06hl Text: DL135/D Rev. 7, Apr-2001 Power MOSFETs Power MOSFETs DL135/D Rev. 7, Apr–2001  SCILLC, 2001 Previous Edition  1996 “All Rights Reserved” EZFET, MiniMOS & SMARTDISCRETES are trademarks of Semiconductor Components Industries, LLC SCILLC . ChipFET is a trademark of Vishay Siliconix.	Original	DL135/D Apr-2001 r14525 DLD601 E3P102 T2-955V e6n02 t9n10e DL135 1086v l1n06c 24 v DC relay 34.51.7 d3n03 20n06hl	PDF
Untitled Abstract: No abstract text available Text: MMDF3N02HD Power MOSFET 3 Amps, 20 Volts N−Channel SO−8, Dual These miniature surface mount MOSFETs feature ultra low RDS on and true logic level performance. They are capable of withstanding high energy in the avalanche and commutation modes and the	Original	MMDF3N02HD MMDF3N02HD/D	PDF
D3N02 Abstract: AN569 MMDF3N02HD MMDF3N02HDR2 MMDF3N02HDR2G Text: MMDF3N02HD Preferred Device Power MOSFET 3 Amps, 20 Volts N−Channel SO−8, Dual These miniature surface mount MOSFETs feature ultra low RDS on and true logic level performance. They are capable of withstanding high energy in the avalanche and commutation modes and the	Original	MMDF3N02HD MMDF3N02HD/D D3N02 AN569 MMDF3N02HD MMDF3N02HDR2 MMDF3N02HDR2G	PDF
TRANSISTOR LWW 20 Abstract: TRANSISTOR LWW 17 Text: MMDF3N02HD Preferred Device Power MOSFET 3 Amps, 20 Volts N−Channel SO−8, Dual These miniature surface mount MOSFETs feature ultra low RDS on and true logic level performance. They are capable of withstanding high energy in the avalanche and commutation modes and the	Original	MMDF3N02HD TRANSISTOR LWW 20 TRANSISTOR LWW 17	PDF
D3N02 Abstract: No abstract text available Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M M DF3N02HD Medium Power Surface Mount Products M otorola Preferred D « vic * TMOS Dual N-Channel Field Effect Transistors DUAL TMOS POWER MOSFET 3.0 AMPERES 20 VOLTS RDS on = 0.090 OHM MiniMOS™ devices are an advanced series of power MOSFETs	OCR Scan	DF3N02HD DF3N02H D3N02	PDF