D12S60C
Abstract: IDH12S60C JESD22 uc1020
Text: IDH12S60C 2ndGeneration thinQ!TM SiC Schottky Diode Product Summary Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark V DC 600 V Qc 30 nC IF 12 A • No reverse recovery/ No forward recovery • No temperature influence on the switching behavior
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IDH12S60C
PG-TO220-2
D12S60C
D12S60C
IDH12S60C
JESD22
uc1020
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D12S60C
Abstract: IDT12S60 R600 IDT12S60C
Text: IDT12S60C 2nd Generation thinQ!TM SiC Schottky Diode Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark Product Summary V DC 600 V Qc 30 nC IF 12 A • No reverse recovery/ No forward recovery • No temperature influence on the switching behavior
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IDT12S60C
PG-TO220-2-2
IDT12S60C
PG-TO220-2-2
D12S60C
IDT12S60
R600
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Untitled
Abstract: No abstract text available
Text: IDT12S60C 2nd Generation thinQ! SiC Schottky Diode Features Product Summary V DC 600 V • Switching behavior benchmark Qc 30 nC • No reverse recovery/ No forward recovery I F @ T C < 140 °C 12 A • Temperature independent switching behavior I F @ T C < 100 °C
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IDT12S60C
PG-TO220-2-2
20mA2)
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D12S60C
Abstract: d12s60 PG-TO220 IDT12S60C JESD22
Text: IDT12S60C 2nd Generation thinQ!TM SiC Schottky Diode Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark Product Summary V DC 600 V Qc 30 nC IF 12 A • No reverse recovery/ No forward recovery • No temperature influence on the switching behavior
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IDT12S60C
PG-TO220-2-2
D12S60C
D12S60C
d12s60
PG-TO220
IDT12S60C
JESD22
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IDH12S60C
Abstract: d12s60 D12S60C
Text: IDH12S60C 2ndGeneration thinQ!TM SiC Schottky Diode Product Summary Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark • No reverse recovery/ No forward recovery VDC 600 V Qc 30 nC IF 12 A • No temperature influence on the switching behavior
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IDH12S60C
IDH12S60C
PG-TO220-2
D12S60C
d12s60
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D12S60C
Abstract: pg-to220-2-2 IDT12S60C JESD22
Text: IDT12S60C 2nd Generation thinQ!TM SiC Schottky Diode Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark Product Summary V DC 600 V Qc 30 nC IF 12 A • No reverse recovery/ No forward recovery • No temperature influence on the switching behavior
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Original
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PDF
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IDT12S60C
PG-TO220-2-2
D12S60C
PG-TO220-2-2:
D12S60C
pg-to220-2-2
IDT12S60C
JESD22
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Untitled
Abstract: No abstract text available
Text: IDH12S60C 2ndGeneration thinQ!TM SiC Schottky Diode Product Summary Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark • No reverse recovery/ No forward recovery VDC 600 V Qc 30 nC IF 12 A • No temperature influence on the switching behavior
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IDH12S60C
PG-TO220-2
D12S60C
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