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    D08S60 Search Results

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    D08S60 Price and Stock

    onsemi FFD08S60S-F085

    DIODE GEN PURP 600V 8A TO252AA
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    DigiKey FFD08S60S-F085 Reel
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    Newark FFD08S60S-F085 Reel 2,500
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    Samtec Inc IDMD-08-S-60.00

    SLIM BODY DOUBLE-ROW IDC MALE AS
    Free Sample
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    DigiKey IDMD-08-S-60.00 Bulk 1
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    Avnet Americas IDMD-08-S-60.00 Bulk 1
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    Mouser Electronics IDMD-08-S-60.00
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    Sager IDMD-08-S-60.00 1
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    Samtec Inc IDSD-08-S-60.00

    INSULATION DISPLACEMENT TERMINAL
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    DigiKey IDSD-08-S-60.00 Bulk 1
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    Mouser Electronics IDSD-08-S-60.00
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    Master Electronics IDSD-08-S-60.00
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    Samtec Inc TCSD-08-S-60.00-01

    2MM DOUBLE ROW FEMALE IDC ASSEMB
    Free Sample
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    DigiKey TCSD-08-S-60.00-01 Bulk 1
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    Mouser Electronics TCSD-08-S-60.00-01
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    Sager TCSD-08-S-60.00-01 1
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    Samtec Inc TCMD-08-S-60.00-01

    2MM DOUBLE ROW MALE IDC ASSEMBLY
    Free Sample
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    DigiKey TCMD-08-S-60.00-01 Bulk 1
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    Avnet Americas TCMD-08-S-60.00-01 Bulk 1
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    Mouser Electronics TCMD-08-S-60.00-01
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    Newark TCMD-08-S-60.00-01 Bulk 1
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    Sager TCMD-08-S-60.00-01 1
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    D08S60 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: IDT08S60C 2nd Generation thinQ! SiC Schottky Diode Features Product Summary V DC 600 V • Switching behavior benchmark QC 19 nC • No reverse recovery/ No forward recovery I F @ T C < 140 °C 8 A • Temperature independent switching behavior I F @ T C < 100 °C


    Original     		IDT08S60C PG-TO220-2-2 20mA2) PDF

    D08S60C

    Abstract: IDH08S60C JESD22
    Text: IDH08S60C 2ndGeneration thinQ!TM SiC Schottky Diode Product Summary Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark V DC 600 V Qc 19 nC IF 8 A • No reverse recovery/ No forward recovery • No temperature influence on the switching behavior


    Original     		IDH08S60C PG-TO220-2 D08S60C D08S60C IDH08S60C JESD22 PDF

    Untitled

    Abstract: No abstract text available
    Text: IDT08S60C 2nd Generation thinQ!TM SiC Schottky Diode Features Product Summary • Revolutionary semiconductor material - Silicon Carbide V DC 600 V • Switching behavior benchmark Qc 19 nC • No reverse recovery/ No forward recovery IF 8 A • No temperature influence on the switching behavior


    Original     		IDT08S60C IDT08S60C PG-TO220-2-2 D08S60C PDF

    D08S60C

    Abstract: No abstract text available
    Text: IDH08S60C 2ndGeneration thinQ!TM SiC Schottky Diode Product Summary Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark VDC 600 V Qc 19 nC IF 8 A • No reverse recovery/ No forward recovery • No temperature influence on the switching behavior


    Original     		IDH08S60C IDH08S60C PG-TO220-2 D08S60C PDF

    d08s60

    Abstract: diode 8a 600v
    Text: SDT08S60 thinQ! SiC Schottky Diode Silicon Carbide Schottky Diode • Worlds first 600V Schottky diode Product Summary • Revolutionary semiconductor V 600 VRRM material - Silicon Carbide • Switching behavior benchmark Qc 24 nC • No reverse recovery


    Original     		SDT08S60 PG-TO220-2-2. Q67040S4647 D08S60 d08s60 diode 8a 600v PDF

    D08S60C

    Abstract: IDT08S60C JESD22 D08S60 D08S
    Text: IDT08S60C 2nd Generation thinQ!TM SiC Schottky Diode Features Product Summary • Revolutionary semiconductor material - Silicon Carbide V DC 600 V • Switching behavior benchmark Qc 19 nC • No reverse recovery/ No forward recovery IF 8 A • No temperature influence on the switching behavior


    Original     		IDT08S60C PG-TO220-2-2 D08S60C D08S60C IDT08S60C JESD22 D08S60 D08S PDF

    D08S60C

    Abstract: IDT08S60C JESD22
    Text: IDT08S60C 2nd Generation thinQ!TM SiC Schottky Diode Features Product Summary • Revolutionary semiconductor material - Silicon Carbide V DC 600 V • Switching behavior benchmark Qc 19 nC • No reverse recovery/ No forward recovery IF 8 A • No temperature influence on the switching behavior


    Original     		IDT08S60C PG-TO220-2-2 D08S60C D08S60C IDT08S60C JESD22 PDF

    Schottky diode TO220

    Abstract: Q67040S4647 SDT08S60 D08S60
    Text: SDT08S60 thinQ! SiC Schottky Diode Silicon Carbide Schottky Diode • Worlds first 600V Schottky diode Product Summary • Revolutionary semiconductor V 600 VRRM material - Silicon Carbide • Switching behavior benchmark Qc 24 nC • No reverse recovery


    Original     		SDT08S60 PG-TO220-2-2. D08S60 Q67040S4647 PG-TO-220-2-2 Schottky diode TO220 Q67040S4647 SDT08S60 D08S60 PDF

    Schottky diode TO220

    Abstract: SDT08S60 6260 thermal infineon 6260 Single Schottky diode TO-220 Q67040S4647
    Text: SDT08S60 thinQ! SiC Schottky Diode Silicon Carbide Schottky Diode • Worlds first 600V Schottky diode Product Summary • Revolutionary semiconductor V 600 VRRM material - Silicon Carbide • Switching behavior benchmark Qc 24 nC • No reverse recovery


    Original     		SDT08S60 P-TO220-2-2. D08S60 Q67040S4647 Schottky diode TO220 SDT08S60 6260 thermal infineon 6260 Single Schottky diode TO-220 Q67040S4647 PDF

    Untitled

    Abstract: No abstract text available
    Text: IDH08S60C 2ndGeneration thinQ!TM SiC Schottky Diode Product Summary Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark VDC 600 V Qc 19 nC IF 8 A • No reverse recovery/ No forward recovery • No temperature influence on the switching behavior


    Original     		IDH08S60C PG-TO220-2 D08S60C PDF

    Untitled

    Abstract: No abstract text available
    Text: SDT08S60 thinQ! SiC Schottky Diode Silicon Carbide Schottky Diode • Worlds first 600V Schottky diode Product Summary • Revolutionary semiconductor V 600 VRRM material - Silicon Carbide • Switching behavior benchmark Qc 24 nC • No reverse recovery


    Original     		SDT08S60 PG-TO220-2-2. Q67040S4647 D08S60 PDF