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    D03SS Price and Stock

    MCB Electronics BD-03-SS-R-AU

    1/1ph Deluxe Rack 3kVA
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    DigiKey BD-03-SS-R-AU Bulk 10
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    MCB Electronics BD-03-SS-R-IS

    1/1ph Deluxe Rack 3kVA ISO
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    DigiKey BD-03-SS-R-IS Bulk 10
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    Molex DND03SS-M010

    Mic 5P M/Mp 1M 90D Ss Drop |Molex DND03SS-M010
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    Newark DND03SS-M010 Bulk 4
    • 1 $54.06
    • 10 $48.18
    • 100 $41.42
    • 1000 $39.96
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    Molex DND03SS-M050

    Mic 5P M/Mp 5M 90D Ss Drop |Molex DND03SS-M050
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    Newark DND03SS-M050 Bulk 4
    • 1 $82.13
    • 10 $77.41
    • 100 $64.2
    • 1000 $62.78
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    Molex DND03SS-M020

    Mic 5P M/Mp 2M 90D Ss Drop |Molex DND03SS-M020
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    Newark DND03SS-M020 Bulk 4
    • 1 $57.14
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    • 100 $44.66
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    D03SS Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BSR56

    Abstract: No abstract text available
    Text: • bbS3T31 D03SS33 311 H A P X N AMER PHILIPS/DISCRETE BSR56 BSR57 BSR58 b7E D y v N-CHANNEL FETS Symmetrical silicon n-channel depletion type ju nctio n field-effect transistors in a plastic m icrom iniature envelope intended fo r application in thick and th in -film circuits. The transistors are intended fo r lowpower, chopper or switching applications in industrial service.


    OCR Scan     		PDF bbS3T31 D03SS33 BSR56 BSR57 BSR58 Drain-R56 BSR56; BSR57; BSR56

    NB111

    Abstract: NB121 NB211E LB 122 NPN U6501 NB212E
    Text: NATL SEMICOND {DISCRETE} 2fl 650 1130 NATL SEMICOND, Q. z cl CO CM j>i|b S D113 □ QOaSSTa DISCRETE 28C National Semiconductor T - z 35 5 9 3 ? - Z - / T- *• * CM CM CM rCÛ z r* Z CL z NB121,122,123(PNP) 100mA 9eneral purpose transistors (TI package and lead coding


    OCR Scan     		PDF bS0113G NB121 100mA 400mV to-92 fcj501130 NB021EV NB211YY NR001E NB111 NB211E LB 122 NPN U6501 NB212E

    qml-38535

    Abstract: GDFP1-F48
    Text: REVISIONS LTR DESCRIPTION DATE YR-MO-DA APPROVED REV SHEET REV SHEET 15 16 17 REV STATUS OF SHEETS PMIC N/A 18 19 REV SHEET 1 2 3 4 5 6 7 8 9 10 11 12 13 14 PREPARED BY DEFENSE SUPPLY CENTER COLUMBUS Joseph A. Kerby STANDARD M ICROCIRCUIT DRAW ING THIS DRAWING IS AVAILABLE


    OCR Scan     		PDF 16-bit 10047GÃ qml-38535 GDFP1-F48

    SOT-90B

    Abstract: No abstract text available
    Text: SL5500 SL5501 SL5511 y v OPTOCOUPLERS Optically coupled isolators consisting o f an infrared emitting GaAs diode and a silicon npn photo­ transistor with accessible base. Plastic envelopes. Suitable fo r T TL integrated circuits. Features • High output/input DC current transfer ratio


    OCR Scan     		PDF SL5500 SL5501 SL5511 bbS3T31 00355b? SOT-90B

    Untitled

    Abstract: No abstract text available
    Text: H11B1 H11B2 H11B3 O P T O C O U P L E R S Optically coupled isolators consisting o f an infrared emitting GaAs diode and an npn silicon photoDarlington transistor. Features • Very high output/input DC current transfer ratio • Isolation voltage o f 2 kV RMS and 2.82 kV DC


    OCR Scan     		PDF H11B1 H11B2 H11B3 0110b bbS3T31 D03SSD4

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI MICROCOMPUTERS 3819 Group SINGLE-CHIP 8-BIT MICROCOMPUTER DESCRIPTION • D-A c o n v e rte -bit X 1 channels The 3819 group is a 8 -bit m icrocom puter based on the 740 fam ily • Z e r o cross detection in p u t. 1 channel


    OCR Scan     		PDF 16-channel QQ35540

    40khz ultrasonic transmitter

    Abstract: 40KHZ ULTRASONIC NA01 nb111eh NR001E NB021EY toko k
    Text: Sö NATL SEHICOND {DISCRETE} NA01 NPN , NA02(PNP) 6 5 0 1 1 3 0 NA TL S E M I C O N D , DE I t.SD113G DG3SSS3 (D I S C R E T E ) _28C 35553 D National Semiconductor NA02(PNP) 80 mA complementary power transistors [~1~| package and lead coding features • 20 Volt/800 mA Amp rating


    OCR Scan     		PDF SD113G Volt/800 NB111EH/J NA01EG/J NR001E 380mW NR001E 40khz ultrasonic transmitter 40KHZ ULTRASONIC NA01 nb111eh NB021EY toko k

    40khz ultrasonic transmitter

    Abstract: 40KHZ ULTRASONIC NB111 NB111EH "Ultrasonic" "transmitter" 40khz ultrasonic transmitter 12V k 3555 NA01EX NR001E NB021EY
    Text: 20 NATL SEHICOND {DISCRETE} 6501130 NATL SEMICOND, STr z a z a DISCRETE _28C 35553 NA02(PNP) 80 mA complementary power transistors [T~| package and lead coding features • 20 Volt/800 mA Amp rating ■ Low V qe (sat) and V qe (sat) characteristics at §


    OCR Scan     		PDF SD113G 800mA Volt/800 NB111EH/J NA01EG/J NR001E NA01EG/J 380mW 40khz ultrasonic transmitter 40KHZ ULTRASONIC NB111 NB111EH "Ultrasonic" "transmitter" 40khz ultrasonic transmitter 12V k 3555 NA01EX NB021EY

    NA72

    Abstract: NB313Y NB022EY NB111EY NB121EY NB123EY NB323Y NR001E transistor A05 2TO220
    Text: ~E0 NATL SEMICOND {DISCRETE} 6501130 a z a c i h - NATL SEMICOND, DE~J t.5 □ 113 0 0G3SSfll fl 28C D ISCRETE 35561 National Semiconductor T ' 2 ? - r < z a. z < Z NA 71 (NPN) NA 7 2 (PNP) ^ AmP com plem entary power tra n sisto rs IT ! packages and lead coding


    OCR Scan     		PDF tSD113D O-126 O-220 100mA 200mA NB323Y NA72W NA71W 100pF. NB022EY NA72 NB313Y NB022EY NB111EY NB121EY NB123EY NB323Y NR001E transistor A05 2TO220

    NB111

    Abstract: npn general purpose amplifier E28C nb121
    Text: ~ 2ä NATL SEHICOND {DISCRETE} 650 1130 a. Z a CO CM NATL S E M IC O N D , D E |b s a ii3 Q a a B ssT a 28C 35593 D IS C R E T E National Semiconductor T- r> CM CM NB121,122,123(PNP) 100mA general purpose transistors CM features rCÛ z V» z CL z (TI package and lead coding


    OCR Scan     		PDF NB121 100mA 400mV tS0113Q NB021EY NB211YY NR001E NA41U NA42U NB111 npn general purpose amplifier E28C

    m7 smd diodes

    Abstract: TCA605G SIEMENS thyristor transistor smd cr smd transistor m7 2.tn SMD siemens EM 235
    Text: 47E D SIEMENS • B235b05 QDB55b3 £ S IS IE6 SIEMENS AKTIEN6 ESE LLSCHAF 7 = ' i 5 ‘' 0 1C for Inductive Two-Wire Proximity Switches with Short-Circuit Protection TCA 605 Bipolar IC Preliminary Data • • • • • • 5 Operates from 1 V supply voltage upwards


    OCR Scan     		PDF B235b05 QDB55b3 Q67000-A8292 P-DSO-16 fl23SbD5 0Q3SS77 T-65-05 fl235b05 m7 smd diodes TCA605G SIEMENS thyristor transistor smd cr smd transistor m7 2.tn SMD siemens EM 235

    capacitor discharge ignition

    Abstract: NB313Y "capacitor discharge ignition" NA61W NA62 Ignition Transformer NB022EY NB123EY NB111 NB32
    Text: NATL SENICOND -CDISCRETE> NATL "äfl SEM ICOND, DF|bSD1130 DISC R ETE 28C 3 5 5 7 7 V/WX National MM Semiconductor J 3 - / / NA61 (NPN) 4 .5 A m p c o m p le m e n ta ry p o w e r tr a n s is to r s NA62(PNP) feature s CO < z IT ! packages and lead coding


    OCR Scan     		PDF 003SS77 O-126 O-220 IO11F NB022EY NB123EY NR001E NB113EY NB111EY NB121EY capacitor discharge ignition NB313Y "capacitor discharge ignition" NA61W NA62 Ignition Transformer NB022EY NB123EY NB111 NB32

    zilog 1866

    Abstract: XTAL NTK Z86E04 in 18 pins NTK oscillator 10 MHz 4 pins Z86CCP00ZEM Z86E04 Z86E08 ntk 8mhz 4 pin oscillator ntk 2MHz
    Text: PRELIMINARY C ustom er P rcxjjrem en iSpecification < $ 2 iL C E Z 8 6 E 0 4 /E 0 8 S L 1 866 CMOS Z8 O T P M icro co n tro i a e r FEATURES Part Number ROM Kbytes RAM* (Bytes) Speed (MHz) Z86E08 Z86E04 2 1 125 125 12 8 * General-Purpose • ■ Program Options:


    OCR Scan     		PDF Z86E08 Z86E04 18-Pin Z86E04/E08 SL1866 zilog 1866 XTAL NTK Z86E04 in 18 pins NTK oscillator 10 MHz 4 pins Z86CCP00ZEM ntk 8mhz 4 pin oscillator ntk 2MHz

    KM48V2104B

    Abstract: No abstract text available
    Text: KM48V2004BS CMOS DRAM ELECTR O NICS 2 M x 8 Bit C M O S Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 2,097,152 x 8 bit Extended Data Out CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power


    OCR Scan     		PDF KM48V2004BS 16Mx4, 512Kx8) KM48V2104B

    audio power amplifier 500 watt

    Abstract: 3a npn to126 transistor
    Text: ~E0 NATL SEMICOND {DISCRETE} 6501130 a z a c i h- NATL SEMICOND, DE~J t.5 □ 113 0 0G3SSfll fl 28C 35561 D ISCRETE T'2?'// National Semiconductor - r < z a. z < Z NA71 (NPN) NA7 2 (PNP) ^ AmP com plem entary pow er tra n sisto rs IT! packages and lead coding


    OCR Scan     		PDF O-126 O-220 100mA 200mA O-126 O-220 D03SS NB022EY NB123EY NR001E audio power amplifier 500 watt 3a npn to126 transistor

    Untitled

    Abstract: No abstract text available
    Text: KM48C2000BS CMOS D R A M ELECTRONICS 2M x 8 Bit C M O S Dynamic RAM with Fast Page Mode DESCRIPTION This is a lamily o1 2,097,152 x 8 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , refresh


    OCR Scan     		PDF KM48C2000BS 16Mx4, 512Kx8) GG3S251

    SOT-90B

    Abstract: No abstract text available
    Text: Product specification Philips Sem iconductors OF4114 Optocoupler FEATURES • High current transfer ratio and low saturation voltage, making the device suitable for use with TTL integrated circuits • Fast switching • High degree of AC and DC insulation 3120 V (RMS and


    OCR Scan     		PDF OF4114 E90700 OF4114 OT90B 0110b 0Q3S535 bb53R31 3553b SOT-90B

    2N2222 transistor

    Abstract: k thermocouple amplification circuit diagram ZB50 220V to 12V transformer trim pot 200k Amplifier type K thermocouple k type themocouple 1000VA 2B50 2B50A
    Text: ANALOG DEVICES INC SIE ]> MÊ OfllbflOO 0 0 3 S S Ü 3 S âl • ANA A N A LO G Isolated, Thelinocoupïe D E V IC E S _ Signal Conditioner □ FEATU RES Accepts J , K , T , E , R , S or B Thermocouple Types Internally Provided Cold Junction Compensation


    OCR Scan     		PDF 160dB 2B50B) 2N2222 transistor k thermocouple amplification circuit diagram ZB50 220V to 12V transformer trim pot 200k Amplifier type K thermocouple k type themocouple 1000VA 2B50 2B50A

    bc2378

    Abstract: box33c b0345 b0348 b0735 B0346 b073b B0736 b0737 B0633
    Text: This Material Pro Electron Series Copyrighted 3> -i PRO ELECTRON SERIES Bipolar—see page 5-37 for JFET By Type No. Its BC107 Respective BC107A Case Styl« TO-18 TO-18 VCES* VC8 0 (VI Min 50 50 VCEO (V) Min V e BO (V) Min 45 6 45 6 'CES* 'CBO a V CB (Vi


    OCR Scan     		PDF tS0113D J15511 SD1130 bc2378 box33c b0345 b0348 b0735 B0346 b073b B0736 b0737 B0633