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    D 417 TRANSISTOR Search Results

    D 417 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    D 417 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    cdi ignition

    Abstract: MKP 338 2 X2 ENEC KP H 1000 pF axial R.46 MKP X2 MKP 1813 MKP 339 1 X1 MKP Y2/X1 mkp x2 enec MKP 339 1 capacitor r. 46 mkp x2
    Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . C apacit o rs S elect o r G ui d e Film capacitors 303 / 304 312 313 314 338 1 338 4 338 6 339 3 6 5 - 3 67 370 - 373 375 38 3 38 5 38 6 40 5 416 - 417 - 418 - 419 - 420 422 - 422 mini 467 - 46 8 - 46 9 471


    Original     		PDF VMN-SG0042-0704 cdi ignition MKP 338 2 X2 ENEC KP H 1000 pF axial R.46 MKP X2 MKP 1813 MKP 339 1 X1 MKP Y2/X1 mkp x2 enec MKP 339 1 capacitor r. 46 mkp x2

    bf417

    Abstract: Bf 417 g transistor
    Text: <^£.mL-dondu<itoi LPioaucti, L/nc. TELEPHONE: 973 376-2922 (212) 227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. BF415 *BF417 NPN SILICON TRANSISTOR, EPITAXIAL PLANAR TRANSISTOR NPN SILICIUM, PLANAR EPITAXIAL Compl. of BF 416 and BF 418


    Original     		PDF BF415 BF417 JO-126- CB-16 bf417 Bf 417 g transistor

    Untitled

    Abstract: No abstract text available
    Text: A Product Line of Diodes Incorporated FMMT415 FMMT417 NPN AVALANCHE TRANSISTOR IN SOT23 Features Mechanical Data • Avalanche Transistor • • • 60A Peak Avalanche Current Pulse width = 20ns BVCES > 260V (415) & 320V (417) • Case: SOT23 Case Material: Molded Plastic. “Green” Molding Compound


    Original     		PDF FMMT415 FMMT417 AEC-Q101 J-STD-020 FMMT415-FMMT417 DS33084

    SD25-2R2

    Abstract: BAT54S application note DFLS220L DN417 BAT54S LT1946 LT3489
    Text: Drive Large TFT-LCD Displays with a Space-Saving Triple-Output Regulator – Design Note 417 Jesus Rosales Introduction The power appetite of large TFT-LCDs appears to be insatiable. Power supplies must feed increasing numbers of transistors and improved display resolutions, and do


    Original     		PDF LT3489, 600mA DFLS220L LT3489 100nF 400mA CDRH4D28-2R0 DN417 400mA 900mA SD25-2R2 BAT54S application note DFLS220L BAT54S LT1946 LT3489

    Untitled

    Abstract: No abstract text available
    Text: MMBT4124 NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features Mechanical Data • • • • • • • Epitaxial Planar Die Construction Complementary PNP Type Available MMBT4126 Ideal for Medium Power Amplification and Switching Lead, Halogen and Antimony Free, RoHS Compliant


    Original     		PDF MMBT4124 MMBT4126) OT-23 J-STD-020D MIL-STD-202, DS30105

    marking code k1

    Abstract: J-STD-020D MMBT4124 MMBT4124-7-F MMBT4126
    Text: MMBT4124 NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR Please click here to visit our online spice models database. Features Mechanical Data • • • • • • • Epitaxial Planar Die Construction Complementary PNP Type Available MMBT4126 Ideal for Medium Power Amplification and Switching


    Original     		PDF MMBT4124 MMBT4126) OT-23 J-STD-020D MIL-STD-202, DS30105 marking code k1 J-STD-020D MMBT4124 MMBT4124-7-F MMBT4126

    mmbt3904

    Abstract: K1N TRANSISTOR marking code k1 complementary mmbt3904 MMBT3904-7 J-STD-020D MMBT3904-7-F MMBT3906 MMBT39047F k1n marking code
    Text: MMBT3904 NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR Please click here to visit our online spice models database. Features Mechanical Data • • • • • • • • Epitaxial Planar Die Construction Complementary PNP Type Available MMBT3906 Ideal for Medium Power Amplification and Switching


    Original     		PDF MMBT3904 MMBT3906) AEC-Q101 OT-23 J-STD-020D DS30036 mmbt3904 K1N TRANSISTOR marking code k1 complementary mmbt3904 MMBT3904-7 J-STD-020D MMBT3904-7-F MMBT3906 MMBT39047F k1n marking code

    K1N TRANSISTOR

    Abstract: marking code k1 MMBT3904 complementary mmbt3904 mmbt3904 complementary MMBT3904-7 J-STD-020D MMBT3904-7-F MMBT3906 transistor marking code
    Text: MMBT3904 NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR Please click here to visit our online spice models database. Features Mechanical Data • • • • • • • • Epitaxial Planar Die Construction Complementary PNP Type Available MMBT3906 Ideal for Medium Power Amplification and Switching


    Original     		PDF MMBT3904 MMBT3906) AEC-Q101 OT-23 J-STD-020D MIL-STD-202, 20orporated DS30036 K1N TRANSISTOR marking code k1 MMBT3904 complementary mmbt3904 mmbt3904 complementary MMBT3904-7 J-STD-020D MMBT3904-7-F MMBT3906 transistor marking code

    UJT-2N2646 PIN DIAGRAM DETAILS

    Abstract: UJT-2N2646 1N5844 transistor GDV 64A motorola diode marking 925b Zener Diode SOT-23 929b 1N4042A Motorola 1n4504 1N5856B 1n5844 diode
    Text: Motorola TVS/Zener Device Data Alphanumeric Index of Part Numbers 1 Cross Reference and Index 2 Selector Guide for Transient Voltage Suppressors and Zener Diodes 3 Transient Voltage Suppressors Axial Leaded Data Sheets 4 Transient Voltage Suppressors Surface Mounted Data Sheets


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: MMBF170 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)60 V(BR)GSS (V)20 I(D) Max. (A)500m I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)300m Minimum Operating Temp (øC)


    Original     		PDF MMBF170

    ipc-SM-782

    Abstract: BC847BLD BC847BLD-7
    Text: BC847BLD Lead-free Green NEW PRODUCT SMALL SIGNAL NPN TRANSISTOR WITH CONTROLLED BASE-EMITTER VOLTAGE Features • · · · · Low Deviation in Base-Emitter Voltage Surface Mount Package Ideally Suited for Automated Assembly Processes Lead Free by Design/RoHS Compliant Note 2


    Original     		PDF BC847BLD OT-23 J-STD-020C MIL-STD-202, DS30824 ipc-SM-782 BC847BLD BC847BLD-7

    marking code k1

    Abstract: J-STD-020D MMBT4401 MMBT4401-7-F MMBT4403 k2x transistor surface mount
    Text: MMBT4401 NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR Please click here to visit our online spice models database. Features Mechanical Data • • • • • • • • Epitaxial Planar Die Construction Complementary PNP Type Available MMBT4403 Ideal for Medium Power Amplification and Switching


    Original     		PDF MMBT4401 MMBT4403) AEC-Q101 OT-23 J-STD-020D DS30039 marking code k1 J-STD-020D MMBT4401 MMBT4401-7-F MMBT4403 k2x transistor surface mount

    Untitled

    Abstract: No abstract text available
    Text: BC847BLD SMALL SIGNAL NPN TRANSISTOR WITH CONTROLLED BASE-EMITTER VOLTAGE Features • • • • • • Low Deviation in Base-Emitter Voltage Surface Mount Package Ideally Suited for Automated Assembly Processes Lead Free by Design/RoHS Compliant Note 1


    Original     		PDF BC847BLD AEC-Q101 OT-23 J-STD-020D MIL-STD-202, DS30824

    Untitled

    Abstract: No abstract text available
    Text: N AUER PHILIPS/D ISCR ETE b'tE D bbS3^31 QQ30bRQ 417 * A P X Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a lastic envelope. he device is intended for use in


    OCR Scan     		PDF QQ30bRQ O220AB BUK456-800A/B BUK456 -800A -800B K456-800A bbS3T31 0030b84

    BFT44

    Abstract: BFT45
    Text: N AM ER P H I L IP S /D IS C R E T E h ^Z ^ 3 3 *1 3 1 D Q Q S77SQ 417 APX BFT44 BFT45 SILICON P-N-P HIGH-VOLTAGE TRANSISTORS Planar epitaxial transistors in TO-39 metal envelopes, intended as general purpose amplifiers and switching devices in industrial and telephone applications.


    OCR Scan     		PDF bbS3131 QQS77SQ BFT44 BFT45 BFT45

    honeywell memory sram

    Abstract: 419B3E
    Text: b3E D 4551072 DGQ1D3M 417 • H 0 N 3 Honeywell RICMOS SEA OF TRANSISTORS GATE ARRAY HR2210 FEATURES OTHER RADIATION HARDNESS • Total Dose Hardness of >1x106 rad Si02 • Dose Rate Upset Hardness > 1x10° rad(Si)/sec • Dose Rate Survivability > 1x1012rad(Si)/sec


    OCR Scan     		PDF HR2210 1x106 1x1012rad 1x101 honeywell memory sram 419B3E

    417 TRANSISTOR

    Abstract: BF415 Bf 417 g transistor transistor 415 BF417 transistor 417 415 TRANSISTOR bf 415 J BF417 Bf 417
    Text: BF415 *B F 417 NPN SILICON TRANSISTOR, E P IT A X IA L PLANAR TRANSISTOR NPN S ILIC IU M , PLA N A R E P IT A X IA L Compì, o f BF 416 and BF 418 îfc Preferred device D isp o sitif recommandé Video o utput stages in T V sets Etages de sortie des amplificateurs


    OCR Scan     		PDF BF415 O-126- CB-16 417 TRANSISTOR BF415 Bf 417 g transistor transistor 415 BF417 transistor 417 415 TRANSISTOR bf 415 J BF417 Bf 417

    BLY93C

    Abstract: RF POWER TRANSISTOR NPN vhf 77530 capacitor
    Text: 7 1 1 0 8 2 ti D 0 t.3 t.M7 417 « P H I N bSE D BLY93C P H IL I P S I N T E R N A T I O N A L V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended fo r use in class-A, B and C operated h.f. and v.h.f. transm itters w ith a nominal supply voltage o f 28 V. The transistor is resistance stabilized and is


    OCR Scan     		PDF 711082ti BLY93C 59-j54 OT-120. BLY93C RF POWER TRANSISTOR NPN vhf 77530 capacitor

    TE 2241 motorola

    Abstract: No abstract text available
    Text: MOTORCLA SC XSTRS/R 1 5 E D § L3t,?2SM F M A X IM U M RATINGS Symbol Rating Value U nit Collector-Emitter Voltage VCEO 40 Vdc Emitter-Base Voltage Ve b o 4.0 Vdc ic 100 mAdc Symbol Max Unrt PD 225 mW 1.8 mWV°C R«j a 556 °C/W PD 300 mW 2.4 mWAC R«j a 417


    OCR Scan     		PDF MMBTA20L OT-23 O-236AB) TE 2241 motorola

    Untitled

    Abstract: No abstract text available
    Text: 12E D I fc.3b?HS4 0005014 4 M A X I M U M R A T IN G S Value Unit VCEO 32 Vdc Collector-Base Voltage VCBO 60 Vdc Emitter-Base Voltage v EBO 5.0 Vdc 'c 800 mAdc Sym bol M ax Unit PD 225 mW 1.8 mW/°C Rö j a 556 °c /w Po 300 mW 2.4 mW/'C RejA 417 X /W Tj« Tstq


    OCR Scan     		PDF BCW65AL OT-23 O-236AB)

    diodes SY 200

    Abstract: diode sy 526
    Text: M A XIM U M RATINGS EA CH D IO DE Sy m b o l Value Reverse V oltage Vr 50 V dc Forw ard Current *F 200 m Adc *FM (surge) 500 m Adc Sy m b o l M ax Unit PD 225 mW 1.8 m W /T RtfJA 556 °c/w Pd 300 mW 2.4 m W /X RflJA 417 °C/W Tj< ^sta - 55 to + 1 50 DC Rating


    OCR Scan     		PDF BAV74LT1 OT-23 O-236AB) diodes SY 200 diode sy 526

    AVALANCHE TRANSISTOR

    Abstract: FMMT417 FMMT415
    Text: SOT23 NPN SILICON PLANAR AVALANCHE TRANSISTOR i S S U E 4 - O C T O B E R 1995 FMMT415 FMMT417 O FEATURES * Specifically de sign ed for A v a la n c h e m ode o peration * 60A Peak A va la n ch e Current Pulse w idth=20ns rC A P P L IC A T IO N S * Laser LED drivers


    OCR Scan     		PDF FMMT415 FMMT417 AVALANCHE TRANSISTOR FMMT417

    motorola cmos

    Abstract: MC14575 MC14576 TV11 MC14577A mc14574 MC14576A MC14576AF MC14576AP MC14577AF
    Text: MOTOROLA SEM IC O N D U C TO R TECHNICAL DATA MC14576A MC14577A Advance Information Dual Video Amplifiers CMOS Each of these devices contains two amplifiers realized in CMOS. Each amp also employs two lateral NPN bipolar transistors. The MC14576A contains two internally-compensated operational amplifiers.


    OCR Scan     		PDF MC14576A MC14577A MC14573 MC14577A MC14574 MC14578 MC14471 MC14575 motorola cmos MC14575 MC14576 TV11 mc14574 MC14576AF MC14576AP MC14577AF

    B0415

    Abstract: b0416 B0633 b0636 MH8106 B0635 BD415 BD416 BD417 b063
    Text: P O L A R IT Y Power Transistors TYPE NO. C A SE H M A X IM U M R A T IN G S V C E S A T FE Pd (W ) 'c (A ) V CEO (V ) m in m ax B D 239 BD239A BD239B B D 240 BD240A N N N P P T O -2 2 0 T O -2 2 0 T O -2 2 0 T O -2 2 0 T O -2 2 0 30 30 30 30 30 2 2 2 2


    OCR Scan     		PDF BD239 O-220 BD240 BD239A BD240A BD239B BD240B BD240 B0415 b0416 B0633 b0636 MH8106 B0635 BD415 BD416 BD417 b063