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    Abstract: No abstract text available
    Text: ChenYang Technologies GmbH & Co. KG CYSJ302C GaAs HALL-EFFECT ELEMENTS CYSJ302C series Hall-effect element is a ion-implanted magnetic field sensor made of monocrystal gallium arsenide GaAs semiconductor material group III-V using ion-implanted technology.


    Original     		CYSJ302C THS119, KSY14 KSY44 D-85464 PDF