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    COMPLEMENTARY BIPOLAR PROCESS Search Results

    COMPLEMENTARY BIPOLAR PROCESS Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TMP89FS60AUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/LQFP64-P-1010-0.50E Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS63AUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/LQFP52-P-1010-0.65 Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS60BFG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/P-LQFP64-1414-0.80-002 Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS63BUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/P-LQFP52-1010-0.65-002 Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS62AUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/LQFP44-P-1010-0.80A Visit Toshiba Electronic Devices & Storage Corporation

    COMPLEMENTARY BIPOLAR PROCESS Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    polysilicon resistor

    Abstract: High Speed Amplifiers Complementary Bipolar Process vertical PNP DS00107
    Text: HJV Complementary Bipolar Process Data Sheet DS00107 / June 2010 HJV is a high voltage version of the RF- HJ double polysilicon trench isolated complementary bipolar process, optimized for very high linearity applications. Key parameters minimum geometry device


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    PDF DS00107 polysilicon resistor High Speed Amplifiers Complementary Bipolar Process vertical PNP

    plessey inductors

    Abstract: polysilicon resistor High Speed Amplifiers DS00105
    Text: HJB Complementary Bipolar Process Data Sheet DS00105 / June 2010 HJB is a double polysilicon trench isolated complementary bipolar process for RF applications in the range 900MHz to 2.4GHz. Key parameters minimum geometry device NPN PNP fT 19 GHz 15GHz CJC


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    PDF DS00105 900MHz 15GHz 110/155/on plessey inductors polysilicon resistor High Speed Amplifiers

    DS00107

    Abstract: ic1a polysilicon resistor High Speed Amplifiers IC 1A
    Text: HJW Complementary Bipolar Process Data Sheet DS00107 / June 2010 HJW is a high voltage version of the RF-HJ double polysilicon trench isolated complementary bipolar process with high Bvebo > 4.5 V, suitable for very high linearity applications. Key parameters minimum geometry device


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    PDF DS00107 ic1a polysilicon resistor High Speed Amplifiers IC 1A

    mtx m1

    Abstract: 60PIN CXA1391Q CXA1391R sony cxa
    Text: CXA1391Q/R Processing IC for Complementary Color Mosaic CCD Camera For the availability of this product, please contact the sales office. Description The CXA1391Q/R is a bipolar IC developed for signal processing in complementary color mosaic CCD cameras.


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    PDF CXA1391Q/R CXA1391Q/R CXA1391Q 170mW) QFP064 CXA1391R 64PIN LQFP-64P-L01 QFP064-P-1010-A mtx m1 60PIN CXA1391Q CXA1391R sony cxa

    mtx m1

    Abstract: 2.2k Preset 60PIN CXA1391Q CXA1391R
    Text: CXA1391Q/R Processing IC for Complementary Color Mosaic CCD Camera Description The CXA1391Q/R is a bipolar IC developed for signal processing in complementary color mosaic CCD cameras. CXA1391Q 64 pin QFP Plastic Features • Low power consumption (170mW)


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    PDF CXA1391Q/R CXA1391Q/R CXA1391Q 170mW) QFP064 CXA1391R 64PIN LQFP-64P-L01 QFP064-P-1010-A mtx m1 2.2k Preset 60PIN CXA1391Q CXA1391R

    mtx m1

    Abstract: CXA1391R CXA1393 2.2k Preset pin diagram 1K variable resistor 60PIN CXA1391Q CXA1390 iriso
    Text: CXA1391Q/R Processing IC for Complementary Color Mosaic CCD Camera Description The CXA1391Q/R is a bipolar IC developed for signal processing in complementary color mosaic CCD cameras. CXA1391Q 64 pin QFP Plastic Features • Low power consumption (170mW)


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    PDF CXA1391Q/R CXA1391Q/R CXA1391Q 170mW) QFP064 CXA1391R 64PIN LQFP-64P-L01 QFP064-P-1010-A mtx m1 CXA1391R CXA1393 2.2k Preset pin diagram 1K variable resistor 60PIN CXA1391Q CXA1390 iriso

    Bipolar HJ

    Abstract: No abstract text available
    Text: MITEL BIPOLAR HJ PROCESS HJ is a double-polysilicon trench isolated complementary bipolar process for RF application in the range 900MHz to 3.5GHz. NPN Cross Section Emitter Base P+ Collector P+ base DC epitaxy n- BN CS CS Substrate (p-) VPNP Cross Section


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    PDF 900MHz 18GHz 28GHz Bipolar HJ

    "Varactor Diodes"

    Abstract: DS5230
    Text: MITEL BIPOLAR HJ PROCESS HJ is a double-polysilicon trench isolated complementary bipolar process for RF application in the range 900MHz to 3.5GHz. NPN Cross Section Emitter Base P+ Collector P+ base DC epitaxy n- BN CS CS Substrate (p-) VPNP Cross Section


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    PDF 900MHz DS5230 18GHz "Varactor Diodes"

    "Varactor Diodes"

    Abstract: opto 22 cjc testing of varactor diode polysilicon resistor
    Text: Mitel Bipolar HL Process HL is a double-polysilicon trench isolated complementary bipolar process For rf applications up to 6 GHz. NPN cross section Base VPNP Cross Section Emitter Base Collector Emitter Collector Isolation oxi P Base P N Base N D epitaxy


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    tip122 tip127 audio amp

    Abstract: BU108 K 3569 D44H1 tip120 MJ1302A equivalent 2SB595 BDX54 BU326 BU100
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN MJ3281A* PNP MJ1302A*  Data Sheet Designer's Complementary NPN-PNP Silicon Power Bipolar Transistor *Motorola Preferred Device 15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 200 VOLTS 250 WATTS The MJ3281A and MJ1302A are PowerBase power transistors for high power


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    PDF MJ3281A MJ1302A MJ3281A* MJ1302A* 204AA TIP73B TIP74 TIP74A TIP74B TIP75 tip122 tip127 audio amp BU108 K 3569 D44H1 tip120 MJ1302A equivalent 2SB595 BDX54 BU326 BU100

    sec tip41c

    Abstract: MJE493 2SC1419 2sc3281 2n3055 audio output circuit BDW93 MJ1000 BDW83 buv98a cross reference 2SC1943
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN MJL3281A* PNP MJL1302A*  Data Sheet Designer's Complementary NPN-PNP Silicon Power Bipolar Transistor *Motorola Preferred Device 15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 200 VOLTS 200 WATTS • The MJL3281A and MJL1302A are PowerBase power transistors for high power


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    PDF MJL3281A MJL1302A MJL3281A* MJL1302A* TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A sec tip41c MJE493 2SC1419 2sc3281 2n3055 audio output circuit BDW93 MJ1000 BDW83 buv98a cross reference 2SC1943

    Bt692

    Abstract: E692AHJ EVM692AHJ Edge693
    Text: Edge692 200 MHz Monolithic Dual Pin Electronics Driver EDGE HIGH-PERFORMANCE PRODUCTS Description Applications The Edge692 is a dual pin electronics driver manufactured in a high-performance, complementary bipolar process. In Automatic Test Equipment ATE


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    PDF Edge692 Edge692 10-percent 50-percent E692AHJ 28-Pin EVM692AHJ Bt692 E692AHJ EVM692AHJ Edge693

    window comparator

    Abstract: No abstract text available
    Text: Edge720 500 MHz Pin Electronics Driver, Window Comparator, and Load TARGET HIGH-PERFORMANCE PRODUCTS – ATE Description Features The Edge720 is a totally monolithic ATE pin electronics solution manufactured in a high-performance complementary bipolar process.


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    PDF Edge720 window comparator

    comparator 12v

    Abstract: No abstract text available
    Text: Edge720 500 MHz Pin Electronics Driver, Window Comparator, and Load TARGET HIGH-PERFORMANCE PRODUCTS – ATE Description Features The Edge720 is a totally monolithic ATE pin electronics solution manufactured in a high-performance complementary bipolar process.


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    PDF Edge720 Edge720 Edge710, comparator 12v

    E720BXF

    Abstract: EVM720AXF
    Text: Edge720 500 MHz Pin Electronics Driver, Window Comparator, and Load TARGET HIGH-PERFORMANCE PRODUCTS – ATE Description Features The Edge720 is a totally monolithic ATE pin electronics solution manufactured in a high-performance complementary bipolar process.


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    PDF Edge720 E720BXF EVM720AXF

    Untitled

    Abstract: No abstract text available
    Text: LMH6715QML www.ti.com SNOSAQ3B – NOVEMBER 2010 – REVISED MAY 2013 LMH6715QML Dual Wideband Video Op Amp Check for Samples: LMH6715QML FEATURES DESCRIPTION • The LMH6715 combines Texas Instrument's VIP10 high speed complementary bipolar process with


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    PDF LMH6715QML LMH6715QML 480MHz 400MHz 100MHz -70dB 10MHz) 300V/s CLC412

    H1105

    Abstract: CLC406 HA4201 HA4314 HA4344 HA4404 HA4600 HFA1105 HFA1135 HFA1145
    Text: HFA1105 TM Data Sheet September 1998 FN3395.6 330MHz, Low Power, Current Feedback Video Operational Amplifier Features The HFA1105 is a high speed, low power current feedback amplifier built with Intersil’s proprietary complementary bipolar UHF-1 process.


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    PDF HFA1105 FN3395 330MHz, HFA1105 H1105 CLC406 HA4201 HA4314 HA4344 HA4404 HA4600 HFA1135 HFA1145

    Application Note AD8170

    Abstract: ADV3201 AD8183 AD8186 AD8187 AD8113 AD8170 AD8185 composite Video switching AD8174
    Text: MT-089 TUTORIAL Video Multiplexers and Crosspoint Switches VIDEO MULTIPLEXERS In order to meet stringent specifications of bandwidth flatness, differential gain and phase, and 75 Ω drive capability, high speed complementary bipolar processes are more suitable than


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    PDF MT-089 Application Note AD8170 ADV3201 AD8183 AD8186 AD8187 AD8113 AD8170 AD8185 composite Video switching AD8174

    AM12

    Abstract: AM20 E7765
    Text: E7765 1.3 GHz Quad Pin Electronics Driver TEST AND MEASUREMENT PRODUCTS PRELIMINARY Features Description • • • • • • The E7765 four channel, monolithic ATE pin electronics solutions manufactured in a high-performance complementary bipolar process.


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    PDF E7765 E7765 80-Pin EVM7765AXF Edge7765 AM12 AM20

    E710AHF

    Abstract: D710 EVM710AHF
    Text: Edge710 500 MHz Pin Electronics Driver, Window Comparator, and Load EDGE HIGH-PERFORMANCE PRODUCTS Description Features The Edge710 is a totally monolithic ATE pin electronics solution manufactured in a high-performance complementary bipolar process. In Automatic Test


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    PDF Edge710 Edge710 E710AHF EVM710AHF E710AHF D710 EVM710AHF

    polysilicon resistor

    Abstract: cd22 CD34 CD56 CD77 polysilicon resistor fabrication transistor arrays 5v J553S
    Text: calDICE Dielectrically-Isolated, Linear,; Bipolar Semi-Custom Arrays CD22/./CD911 Preliminary DESCRIPTION FEATURES CalDICE are CALOGIC’s family of semi-custom arrays featuring Dielectrically-Isolated Complementary Electronics. CalDICE are fabricated using a 90V, complementary bipolar


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    PDF CD22/. /CD911 CD911, ia443EE polysilicon resistor cd22 CD34 CD56 CD77 polysilicon resistor fabrication transistor arrays 5v J553S

    sony cxa

    Abstract: ccd camera
    Text: SONY CXA1391Q/R Processing IC for Complementary Color Mosaic CCD Camera Description The CXA1391Q/R is a bipolar IC developed for signal processing In complementary color mosaic CCD cameras. Features • Low power consumption 170mW • Number of delay lines used for signal processing


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    PDF CXA1391Q/R CXA1391Q/R 170mW) 3xd32 CXA1391 64PIN LQFP-64P-L01 QFP064- P-1010-A sony cxa ccd camera

    Untitled

    Abstract: No abstract text available
    Text: SONY* C X A 1 3 9 1 Q / R Processing IC for Complementary Color Mosaic CCD Camera Description The CXA1391Q/R is a bipolar IC developed for signal processing in complementary color mosaic CCD cameras. CXA1391Q 64 pin QFP Plastic CXA1391R 64 pin VQFP (Plastic)


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    PDF CXA1391Q/R CXA1391Q CXA1391R 170mW) D007033 910/R fl3fl23fl3 D007034

    63B23

    Abstract: No abstract text available
    Text: SONY C X A 1391Q /R Processing IC for Complementary Color Mosaic CCD Camera Description The CXA1391Q/R is a bipolar IC developed for signal processing in complementary color mosaic CCD cameras. Features • Low power consumption 170mW • Number of delay lines used for signal processing


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    PDF CXA1391Q/R 170mW) CXA1391Q CXA1391R CXA1391Q/R 03flE 64PIN 63B23