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    CMST3410 Search Results

    CMST3410 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    CMST3410 Central Semiconductor SURFACE MOUNT SUPERmini COMPLEMENTARY SILICON LOW VCE(SAT) TRANSISTORS Original PDF

    CMST3410 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    V30010

    Abstract: CMST3410 CMST7410 C07 MARKING CODE
    Text: CMST3410 NPN CMST7410 PNP SURFACE MOUNT COMPLEMENTARY LOW VCE SAT SILICON TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMST3410, CMST7410 types are complementary silicon transistors manufactured by the epitaxial planar process, epoxy


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    PDF CMST3410 CMST7410 CMST3410, CMST3410: CMST7410: OT-323 100mA 500mA 100MHz V30010 C07 MARKING CODE

    v30010

    Abstract: marking C07 CMST7410 CMST3410
    Text: CMST3410 NPN CMST7410 PNP SURFACE MOUNT SUPERminiTM COMPLEMENTARY SILICON LOW VCE SAT TRANSISTORS SOT-323 CASE MAXIMUM RATINGS: (TA=25°C) SYMBOL Collector-Base Voltage VCBO Central TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CMST3410, CMST7410 types are complementary silicon


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    PDF CMST3410 CMST7410 OT-323 CMST3410, CMST3410: CMST7410: 100mA 500mA 100MHz v30010 marking C07

    Untitled

    Abstract: No abstract text available
    Text: CMST3410 NPN CMST7410 PNP w w w. c e n t r a l s e m i . c o m SURFACE MOUNT COMPLEMENTARY LOW VCE SAT SILICON TRANSISTORS DESCRIPTION: The CENTRAL SEMICONDUCTOR CMST3410, CMST7410 types are complementary silicon transistors manufactured by the epitaxial planar process, epoxy


    Original
    PDF CMST3410 CMST7410 CMST3410, CMST3410: CMST7410: OT-323 CMST3410) CMST7410)

    marking C07

    Abstract: No abstract text available
    Text: CMST3410 NPN CMST7410 PNP SURFACE MOUNT COMPLEMENTARY LOW VCE SAT SILICON TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMST3410, CMST7410 types are complementary silicon transistors manufactured by the epitaxial planar process, epoxy


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    PDF CMST3410 CMST7410 CMST3410, CMST3410: CMST7410: OT-323 100mA 500mA 100MHz marking C07

    CMLT3410

    Abstract: CMPT3410 CMST3410 CMUT3410 CP341V CXT3410
    Text: PROCESS CP341V Small Signal Transistors NPN - Low VCE SAT Transistor Chip PROCESS DETAILS Process Epitaxial Planar Die Size 18 x 18 MILS Die Thickness 7.1 MILS Base Bonding Pad Area 3.8 x 3.8 MILS Emitter Bonding Pad Area 3.8 x 3.8 MILS Top Side Metalization


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    PDF CP341V CMLT3410 CMPT3410 CMST3410 CMUT3410 CXT3410 CMLT3410 CMPT3410 CMST3410 CMUT3410 CP341V CXT3410

    a42e

    Abstract: IC 7410 sot-89 A63 CZT900K npn 2907A 2222a A77 SOT23 2222ae A92E 3906 npn
    Text: Small Signal Transistors Surface Mount Packages Actual Size SOD-923 SOT-923 SOT-953 SOD-523 SOT-523 SOT-563 SOD-323 SOT-323 SOT-363 SOD-123 SOD-123F SOT-23 SOT-23F SOT-143 SOT-26 SOT-28 SOT-89 SOT-223 SOT-228 SMA SMB SMC SOIC-16 HD DIP TLP Tiny Leadless


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    PDF OD-923 OT-923 OT-953 OD-523 OT-523 OT-563 OD-323 OT-323 OT-363 OD-123 a42e IC 7410 sot-89 A63 CZT900K npn 2907A 2222a A77 SOT23 2222ae A92E 3906 npn

    BF244 datasheet

    Abstract: 2N5133 equivalent MPS5771 BD345 BD347 BF244 2n5248 bf256 2N3304 2n5910
    Text: Index Industry Part Number Central Process No. Page # Industry Part Number 1N456 .CPD64 . 216 1N456A.CPD64 . 216 1N457 .CPD64 . 216


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    PDF 1N456 CPD64 1N456A. 1N457 1N457A. 1N458 BF244 datasheet 2N5133 equivalent MPS5771 BD345 BD347 BF244 2n5248 bf256 2N3304 2n5910

    transistor

    Abstract: CMLT3410 CMPT3410 CMST3410 CMUT3410 CP341V chip die npn transistor
    Text: PROCESS CP341V Small Signal Transistors NPN - Low VCE SAT Transistor Chip PROCESS DETAILS Process Epitaxial Planar Die Size 18 x 18 MILS Die Thickness 7.1 MILS Base Bonding Pad Area 3.8 x 3.8 MILS Emitter Bonding Pad Area 3.8 x 3.8 MILS Top Side Metalization


    Original
    PDF CP341V CMLT3410 CMPT3410 CMST3410 CMUT3410 transistor CMLT3410 CMPT3410 CMST3410 CMUT3410 CP341V chip die npn transistor

    CMLT3410

    Abstract: CMPT3410 CMST3410 CMUT3410 CP341V CXT3410
    Text: PROCESS CP341V Small Signal Transistors NPN - Low VCE SAT Transistor Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 18 x 18 MILS Die Thickness 7.1 MILS Base Bonding Pad Area 3.8 x 3.8 MILS Emitter Bonding Pad Area 3.8 x 3.8 MILS Top Side Metalization


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    PDF CP341V CMLT3410 CMPT3410 CMST3410 CMUT3410 CXT3410 22-March CMLT3410 CMPT3410 CMST3410 CMUT3410 CP341V CXT3410