CHIP DIE PNP TRANSISTOR Search Results

CHIP DIE PNP TRANSISTOR Result Highlights (5)

Part	Manufacturer	Description
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

CHIP DIE PNP TRANSISTOR Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: TECHNICAL DATA .023F GEOMETRY SURFACE MOUNT PNP SMALL SIGNAL TRANSISTOR DIE NES4403C SURFACE MOUNT PNP SMALL-SIGNAL TRANSISTOR DIE 1. Chip size.… 23 x 23 mils ± 2 mils 2. Chip thickness.… 10 ? 1.5 mils	Original	PDF	NES4403C
Untitled Abstract: No abstract text available Text: Back to Bipolar Small Signal TECHNICAL DATA .023F GEOMETRY SURFACE MOUNT PNP SMALL SIGNAL TRANSISTOR DIE NES4403C SURFACE MOUNT PNP SMALL-SIGNAL TRANSISTOR DIE 1. Chip size.… 23 x 23 mils ± 2 mils 2. Chip thickness.… 10 ? 1.5 mils	Original	PDF	NES4403C
MMDT5401 Abstract: MMDT5551 Text: MMDT5401 Plastic-Encapsulate Multi-Chip PNP+PNP Transistor Elektronische Bauelemente RoHS Compliant Product SOT-363 .055(1.40) .047(1.20) Features .021REF (0.525)REF * Epitaxial Planar Die Construction * Complementary NPN Type Available (MMDT5551) C2 B1	Original	PDF	MMDT5401 OT-363 021REF MMDT5551) 026TYP 65TYP) -10mA, 100MHz 01-Jan-2006 MMDT5401 MMDT5551
2N3467 Abstract: CP603 TRANSISTOR GUIDE 2N3468 Text: Central PROCESS TM CP603 Small Signal Transistors Semiconductor Corp. PNP - Saturated Switch Transistor Chip PROCESS DETAILS PROCESS EPITAXIAL PLANAR DIE SIZE 30 x 30 MILS DIE THICKNESS 7.5 MILS BASE BONDING PAD AREA 5.0 x 4.0 MILS EMITTER BONDING PAD AREA	Original	PDF	CP603 2N3467 2N3468 2N3467 CP603 TRANSISTOR GUIDE 2N3468
CP566 Abstract: CMPT404A MPS404A chip die pnp transistor Text: PROCESS CP566 Central Small Signal Transistor TM Semiconductor Corp. PNP - Silicon Chopper Transistor Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 31.5 x 31.5 MILS Die Thickness 11 MILS Base Bonding Pad Area 7.8 x 6.2 MILS Emitter Bonding Pad Area	Original	PDF	CP566 CMPT404A MPS404A 435-CESS CP566 CMPT404A MPS404A chip die pnp transistor
CM5160 Abstract: CP616 chip die pnp transistor chip die transistor Text: PROCESS CP616 Central Small Signal Transistor TM Semiconductor Corp. PNP - Silicon RF Transistor Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 21.7 x 21.7 MILS Die Thickness 9.0 MILS Base Bonding Pad Area 3.5 MILS DIAMETER Emitter Bonding Pad Area	Original	PDF	CP616 CM5160 CM5160 CP616 chip die pnp transistor chip die transistor
CM5583 Abstract: CP618 chip die pnp transistor chip die transistor CM5-5 Text: PROCESS CP618 Central Small Signal Transistor TM Semiconductor Corp. PNP - Silicon RF Transistor Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 21.7 x 21.7 MILS Die Thickness 9.0 MILS Base Bonding Pad Area 3.5 MILS DIAMETER Emitter Bonding Pad Area	Original	PDF	CP618 CM5583 CM5583 CP618 chip die pnp transistor chip die transistor CM5-5
2N3467 Die Abstract: 2N3467 2N3468 CP667 Text: PROCESS CP667 Central Small Signal Transistor TM Semiconductor Corp. PNP- Saturated Switch Transistor Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 31 x 31 MILS Die Thickness 9.0 MILS Base Bonding Pad Area 5.9 x 11.8 MILS Emitter Bonding Pad Area	Original	PDF	CP667 2N3467 2N3468 2N3467 Die 2N3467 2N3468 CP667
CD 4081 Cmos 2 input and gate IC Abstract: mps404a CMPT404A CP734V Text: PROCESS CP734V Small Signal Transistors PNP - Chopper Transistor Chip PROCESS DETAILS Process Epitaxial Planar Die Size 31.5 x 31.5 MILS Die Thickness 7.1 MILS Base Bonding Pad Area 4.7 x 6.7 MILS Emitter Bonding Pad Area 4.7 x 8.7 MILS Top Side Metalization	Original	PDF	CP734V CMPT404A MPS404A 12-August CD 4081 Cmos 2 input and gate IC mps404a CMPT404A CP734V
"Darlington Transistor" Abstract: transistor mpsa64 CMPTA63 CMPTA64 CP707 CXTA64 CZTA64 MPSA63 MPSA64 Text: PROCESS CP707 Small Signal Transistor PNP - Darlington Transistor Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 27 x 27 MILS Die Thickness 9.0 MILS Base Bonding Pad Area 5.3 x 3.8 MILS Emitter Bonding Pad Area 5.3 x 6.5 MILS Top Side Metalization	Original	PDF	CP707 CMPTA63 CMPTA64 CXTA64 CZTA64 MPSA63 MPSA64 435-hip "Darlington Transistor" transistor mpsa64 CMPTA63 CMPTA64 CP707 CXTA64 CZTA64 MPSA63 MPSA64
CMPTA94 Abstract: CP710 CXTA94 CZTA94 MPSA94 Text: PROCESS CP710 Small Signal Transistors PNP - High VoltageTransistor Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 26 x 26 MILS Die Thickness 9.0 MILS Base Bonding Pad Area 6.1 x 4.9 MILS Emitter Bonding Pad Area 5.2 x 5.2 MILS Top Side Metalization	Original	PDF	CP710 CMPTA94 CXTA94 CZTA94 MPSA94 CMPTA94 CP710 CXTA94 CZTA94 MPSA94
2N2605 Abstract: 2N3799 CMPT5086 CMPT5087 CP588 PN4250A Text: PROCESS CP588 Central Small Signal Transistor PNP - Low Noise Amplifier Transistor Chip TM Semiconductor Corp. PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 15 x 15 MILS Die Thickness 9.0 MILS Base Bonding Pad Area 4.0 x 4.0 MILS Emitter Bonding Pad Area	Original	PDF	CP588 2N2605 2N3799 PN4250A CMPT5086 CMPT5087 2N2605 2N3799 CMPT5086 CMPT5087 CP588 PN4250A
Untitled Abstract: No abstract text available Text: PROCESS CP707 Small Signal Transistor PNP - Darlington Transistor Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 27 x 27 MILS Die Thickness 9.0 MILS Base Bonding Pad Area 5.3 x 3.8 MILS Emitter Bonding Pad Area 5.3 x 6.5 MILS Top Side Metalization	Original	PDF	CP707 CMPTA63 CMPTA64 CXTA64 CZTA64 MPSA63 MPSA64 23-August 23-Ansistor
mj15004 Abstract: CP576 multi emitter transistor Text: PROCESS CP576 Central Power Transistor TM Semiconductor Corp. PNP - Amp/Switch Transistor Chip PROCESS DETAILS Process MULTI EPITAXIAL PLANAR Die Size 203 x 227 MILS Die Thickness 12.5 ± 1.0 MILS Base Bonding Pad Area 38 x 76 MILS Emitter Bonding Pad Area	Original	PDF	CP576 MJ15004 mj15004 CP576 multi emitter transistor

BC847PN Abstract: pnp transister symbol transister NPN TRANSISTER Tr2 transister 1A TRANSISTER chip transister marking B2 NPN/PNP transistor Silicon Transister Text: BC847PN NPN - PNP Silicon Multi-Chip Transistor Elektronische Bauelemente RoHS Compliant Product SOT-363 FEATURE       Epitaxial Die Construction Two internal isolated NPN/PNP transistors in one package Power Dissipation PCM : 0.2 W Temp. = 25˚C	Original	PDF	BC847PN OT-363 -10mA, 100MHz 200Hz 20-Oct-2009 BC847PN pnp transister symbol transister NPN TRANSISTER Tr2 transister 1A TRANSISTER chip transister marking B2 NPN/PNP transistor Silicon Transister
CMPT404A Abstract: CP734V MPS404A Text: PROCESS CP734V Small Signal Transistors PNP - Chopper Transistor Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 31.5 x 31.5 MILS Die Thickness 7.0 MILS Base Bonding Pad Area 4.7 x 6.7 MILS Emitter Bonding Pad Area 4.7 x 8.7 MILS Top Side Metalization	Original	PDF	CP734V CMPT404A MPS404A 22-March CMPT404A CP734V MPS404A
"Darlington Transistor" Abstract: CMPTA63 CMPTA64 CP707 CXTA64 CZTA64 MPSA63 MPSA64 Text: PROCESS CP707 Small Signal Transistor PNP - Darlington Transistor Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 27 x 27 MILS Die Thickness 9.0 MILS Base Bonding Pad Area 5.3 x 3.8 MILS Emitter Bonding Pad Area 5.3 x 6.5 MILS Top Side Metalization	Original	PDF	CP707 CMPTA63 CMPTA64 CXTA64 CZTA64 MPSA63 MPSA64 22-March "Darlington Transistor" CMPTA63 CMPTA64 CP707 CXTA64 CZTA64 MPSA63 MPSA64
CMPT7090L Abstract: CMXT7090L CP709 CXT7090L CZT7090L Text: PROCESS CP709 Power Transistor PNP - Low Saturation Transistor Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 41.3 x 41.3 MILS Die Thickness 9.0 MILS Base Bonding Pad Area 9.5 x 9.2 MILS Emitter Bonding Pad Area 12.8 x 10.2 MILS Top Side Metalization	Original	PDF	CP709 CMPT7090L CXT7090L CZT7090L CMXT7090L 435-1824Saturation CMPT7090L CMXT7090L CP709 CXT7090L CZT7090L
Untitled Abstract: No abstract text available Text: Central PROCESS TM CP707 Small Signal Transistors Semiconductor Corp. PNP - Darlington Transistor Chip PROCESS DETAILS EPITAXIAL PLANAR 27 x 27 MILS PROCESS DIE SIZE 9.0 MILS 6.0 x 4.7 MILS DIE THICKNESS BASE BONDING PAD AREA TOP SIDE METALIZATION 7.0 x 6.3 MILS	Original	PDF	CP707 CMPTA63 CMPTA64 CXTA64 CZTA64 MPSA63 MPSA64
MPSa56 equivalent Abstract: transistor MPSA56 MPSA56 transistor CP704 MPSA55 MPSA56 Text: PROCESS CP704 Small Signal Transistors PNP - High Current Transistor Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 22 x 22 MILS Die Thickness 9.0 MILS Base Bonding Pad Area 3.7 X 3.7 MILS Emitter Bonding Pad Area 4.2 X 4.2 MILS Top Side Metalization	Original	PDF	CP704 MPSA55 MPSA56 MPSa56 equivalent transistor MPSA56 MPSA56 transistor CP704 MPSA55 MPSA56
transistor 2N4033 Abstract: 2N4033 CMPT4033 CP705 CXT4033 CZT4033 Text: PROCESS CP705 Small Signal Transistor PNP - High Current Transistor Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 31 x 31 MILS Die Thickness 9.0 MILS Base Bonding Pad Area 5.9 x 11.8 MILS Emitter Bonding Pad Area 6.5 x 13.8 MILS Top Side Metalization	Original	PDF	CP705 2N4033 CMPT4033 CXT4033 CZT4033 23-August transistor 2N4033 2N4033 CMPT4033 CP705 CXT4033 CZT4033
2N2605 Abstract: 2N3799 CMPT5086 CMPT5087 CP588 PN4250A Text: PROCESS CP588 Small Signal Transistor PNP - Low Noise Amplifier Transistor Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 15 x 15 MILS Die Thickness 9.0 MILS Base Bonding Pad Area 4.0 x 4.0 MILS Emitter Bonding Pad Area 5.5 x 5.5 MILS Top Side Metalization	Original	PDF	CP588 2N2605 2N3799 PN4250A CMPT5086 CMPT5087 21-August 631tor 2N2605 2N3799 CMPT5086 CMPT5087 CP588 PN4250A
2N2907A Abstract: 2N2905A CMPT2907A CMST2907A CXT2907A CZT2907A PN2907A 2N2907A die Text: PROCESS CP591X Small Signal Transistor PNP - Amp/Switch Transistor Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 19 x 19 MILS Die Thickness 5.9 MILS Base Bonding Pad Area 3.5 x 4.3 MILS Emitter Bonding Pad Area 3.5 x 4.5 MILS Top Side Metalization	Original	PDF	CP591X 2N2905A 2N2907A CMPT2907A CMST2907A CXT2907A CZT2907A PN2907A 13-October 2N2907A 2N2905A CMPT2907A CMST2907A CXT2907A CZT2907A PN2907A 2N2907A die
CHIP TRANSISTOR Abstract: transistor 18x18 CMLT7410 CMPT7410 CMST7410 CMUT7410 CP741V Text: PROCESS CP741V Small Signal Transistors PNP - Low VCE SAT Transistor Chip PROCESS DETAILS Process Epitaxial Planar Die Size 18 x 18 MILS Die Thickness 7.1 MILS Base Bonding Pad Area 3.8 x 3.8 MILS Emitter Bonding Pad Area 3.8 x 3.8 MILS Top Side Metalization	Original	PDF	CP741V CMLT7410 CMPT7410 CMST7410 CMUT7410 CHIP TRANSISTOR transistor 18x18 CMLT7410 CMPT7410 CMST7410 CMUT7410 CP741V

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CHIP DIE PNP TRANSISTOR Search Results

CHIP DIE PNP TRANSISTOR Result Highlights (5)

CHIP DIE PNP TRANSISTOR Datasheets Context Search

Untitled

Untitled

MMDT5401

2N3467

CP566

CM5160

CM5583

2N3467 Die

CD 4081 Cmos 2 input and gate IC

"Darlington Transistor"

CMPTA94

2N2605

Untitled

mj15004

BC847PN

CMPT404A

"Darlington Transistor"

CMPT7090L

Untitled

MPSa56 equivalent

transistor 2N4033

2N2605

2N2907A

CHIP TRANSISTOR