Untitled
Abstract: No abstract text available
Text: NPN SILICON PLANAR MEDIUM POWER TRANSISTOR ISSUE 2 -MARCH 94 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Collector-Base Voltage Collector-Emitter Voltage VALUE UNIT v CBO 50 V VCEO 45 V Emitter-Base Voltage v EBO 5 V Base Current • b 100 mA Continuous Collector Current
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cH7Q57Ã
001G35S
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3fs 4a
Abstract: No abstract text available
Text: P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 2 - MARCH 94_ FE A T U R E S * 450 Volt V DS * R dsi « . - 1500 ABSOLUTE MAXIMUM RATINGS. SYM BOL PARAMETER Drain-Source Voltage VALUE UNIT V DS -450 Continuous Drain Current a tT am[j=25°C
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cH7Q57Ã
001G35S
3fs 4a
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Untitled
Abstract: No abstract text available
Text: PNP SILICON PLANAR MEDIUM POWER TRANSISTORS ISSUE 2 -J U L Y 94_ FEATURES * 100 Volt V CE0 * 2 A m p continuous current * Low saturation voltage * P,ot=1W a tt ABSOLUTE M A X IM U M RATINGS. Collector-Emitter Voltage Emitter-Base Voltage
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ZTX753
ZTX752
cH7Q57Ã
0Q1Q354
001G35S
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Untitled
Abstract: No abstract text available
Text: P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 2 -MARCH 94 FE A T U R E S * 50 Volt V,DS * R,D Stonr= 10il L o w threshold ABSOLUTE MAXIMUM RATINGS. SYMBOL PARAMETER Drain-Source Voltage Continuous Drain Current at T amtj=25°C VALUE UNIT V DS -50 V •
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cH7Q57Ã
001G35S
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Untitled
Abstract: No abstract text available
Text: NPN SILICON PLANAR MEDIUM POWER TRANSISTOR ISSU E 1 - SEPT 93_ FEATURES * 100 Volt VCE0 * 1 Amp continuous current * P,0,= 1Watt REFER TO ZTX453 FOR GRAPHS ABSOLUTE MAXIMUM RATINGS. PA RA M ETER SY M B O L Collector-Base Voltage
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ZTX453
100ji
cH7Q57Ã
001G35S
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Untitled
Abstract: No abstract text available
Text: SILICON EPITAXIAL PLANAR ABRUPT TUNER DIODE ISSUE 2 - SEPTEMBER 94_ DIODE PIN CONNECTION 2 ANODE CATHODE ILECTRICAL CHARACTERISTICS at Tamb=25°C SYMBOL PARAMETER MIN TYP MAX 30 UNIT Reverse Breakdown Voltage Vr Reverse Voltage Leakage Ir Case Capacitance
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ZC744
50MHz
cH7Q57Ã
001G35S
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BO 241 A
Abstract: No abstract text available
Text: NPN SILICON PLANAR M EDIUM POWER TRANSISTORS ZTX650 ZTX651 ISSU E 2 - J U L Y 94_ FEATURES * 60 Volt V CE0 * 2 Am p continuous current * Low saturation voltage * Ptot= l Watt E E-Line T092 Compatible ABSOLUTE M A X IM U M RATINGS.
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ZTX650
ZTX651
cH7Q57Ã
001G35S
BO 241 A
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Untitled
Abstract: No abstract text available
Text: N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 2 -M A R C H 94_ FEATURES * 200 Volt V DS * RDS on =10« * Low threshold APPLICATIONS * Telephone handsets REFER TO ZVNL120A FOR GRAPHS ABSOLUTE M A X IM U M RATINGS. SY M B O L PARAM ETER
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ZVNL120A
cH7Q57Ã
001G35S
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Untitled
Abstract: No abstract text available
Text: NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTOR F X T 6 1 4 ISSUE 1 - FEB 94 FEATURES * 100 Volt VCE0 * * /C \ ¿ 7 ffh—' //iff Í//H 800 mA continuous current Gain of 10K at lc=500mA * Pt0,= 1W att APPLICATIONS * Lamp, solenoid and relay drivers E
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500mA
BCX38
cH7Q57Ã
001G35S
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BS170P
Abstract: No abstract text available
Text: N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET BS170P IS S U E 2 - S E P T 93 FE A T U R E S * 60 Volt V DS * R D S c n r5 a REFER TO ZVN3306A FOR G RAPH S ABSOLUTE MAXIMUM RATINGS. SYMBOL Drain-Source Voltage VDS 60 V Continuous Drain Current a tT amb=25°C
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BS170P
ZVN3306A
cH7Q57Ã
001G35S
BS170P
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Untitled
Abstract: No abstract text available
Text: P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 2 -MARCH 94_ FEATURES * 60 Volt V,DS * R ,DS on ' 5£i REFER TO ZVP2106A FOR GRAPHS ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Drain-Source Voltage VDS VALUE Continuous Drain Current at Tam(3=25°C
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ZVP2106A
cH7Q57Ã
0Q1Q354
001G35S
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Ztx458
Abstract: No abstract text available
Text: NPN SILICON PLANAR MEDIUM POWER HIGH VOLTAGE TRANSISTOR ISSU E 2 - MARCH 1994_ FEATURES * 400 Volt VCE0 * 0.5 Am p continuous current * 1 Watt E E-Line T092 Compatible ABSOLUTE M A X IM U M RATINGS. PARAMETER SYM BO L Collector-Base Voltage
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cH7Q57Ã
001G35S
Ztx458
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Untitled
Abstract: No abstract text available
Text: P-CHANNEL ENHANCEMENT MODE VERTICAL D M O S FET ISSUE 2 -M ARCH 94 FEATURES * 100 Volt VDS * RDS.on =8fl / Ds REFER TO ZVP2110A FOR GRAPHS E-Line T092 Compatible ABSOLUTE M A X IM U M RATINGS. PARAMETER SY M B O L Drain-Source Voltage V DS -100 V b -230 mA
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ZVP2110A
cH7Q57Ã
001G35S
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Untitled
Abstract: No abstract text available
Text: NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR ISSUE 2 - M A Y 94_ FEATURES * 12 Volt V CE0 * Gain of 400 at lc=3 A m p s * Very low saturation voltage A P P L IC A T IO N S * Darlington replacement * Flash gu n convertors
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cH7Q57Ã
0Q1Q354
001G35S
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Untitled
Abstract: No abstract text available
Text: NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTOR FXT601B ISSUE 1 - MARCH 94- - FEATURES * 160 Volt VCE0 * Gain of 5K at lc=1 Amp * Ptot= 1 W att APPLICATIONS * Lamp, solenoid and relay drivers * Replacement of T 0 126 and T0220 packages
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FXT601B
T0220
ZTX601B
cH7Q57Ã
001G35S
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Untitled
Abstract: No abstract text available
Text: PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR ISSUE 2 -MARCH 94_ FEATURES * High voltage APPLICATIONS * T e le p h o n e dialler circuit ABSOLUTE M A XIM U M RATINGS. PARAMETER SYM BO L Collector-Base Voltage V A LU E U N IT V V v CBO
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cH7Q57Ã
001G35S
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Untitled
Abstract: No abstract text available
Text: NPN SILICON PLANAR POWER TRANSISTOR PROVISIONAL DATASHEET ISSUE A - NOVEMBER 94 FEATURES * * * Fast switching Guaranteed hFE specified up to 2 A m p s Low collector-emitter saturation voltage ABSOLUTE MAXIMUM RATINGS. PARAMETER SY M B O L VALUE UNIT Collector-Base Voltage
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cH7Q57ß
001G35S
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Untitled
Abstract: No abstract text available
Text: PNP SILICON PLANAR SMALL SIGNAL TRANSISTOR ISSUE 2 -MARCH 94 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Collector-Base Voltage Collector-Emitter Voltage VALUE UNIT v CBO -100 V v CEO -100 V Emitter-Base Voltage VEBO -5 V Continuous Collector Current *C -100
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Tamy-25Â
-100jtA
-100pA
H7Q57Ã
001G35S
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Untitled
Abstract: No abstract text available
Text: PNP SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR ZTX788B ISSUE 2 - APRIL FEATURES * 15 Volt VCE0 * Gain of 300 at lc=2 Amps * Very low saturation voltage APPLICATIONS * Darlington replacement * Flash gun convertors
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ZTX788B
cH7Q57Ã
001G35S
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Untitled
Abstract: No abstract text available
Text: ZC2800 ZC2811 ZC5800 SCHOTTKY BARRIER DIODES IS S U E 2 - M A R C H 94 DIODE PIN CONNECTION t — M- CATHODE 2 ANODE ABSOLUTE MAXIMUM RATINGS. PARAM ETER SYM BO L Power Dissipation at T amb= 25°C Ptot Operating and Storage Temperature Range ZC2800,ZC2811,ZC5800
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ZC2800
ZC2811
ZC5800
ZC2800
ZC2811
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Untitled
Abstract: No abstract text available
Text: PNP SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR ZTX789A ISSUE 2 -APRIL 94_ — — — — FEATURES * 25 Volt VCE0 * Gain of 200 at lc=2 Amps * Very low saturation voltage APPLICATIONS * * Darlington replacement
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ZTX789A
H7Q57Ã
0Q1Q354
001G35S
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Untitled
Abstract: No abstract text available
Text: N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 2 -MARCH 94_ FEATURES * 350 V olt VDS R DS on = 3 5 i i ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Drain-Source Voltage VDS 350 V Continuous Drain Current at Tamb=25°C •d 90 mA Pulsed Drain Current
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cH7Q57Ã
0Q1Q354
001G35S
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Untitled
Abstract: No abstract text available
Text: N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 1 - MARCH 94_ FEATURES * 240 Volt VDS * ^DS on = 1 6 fl APPLICATIONS * Telephone handsets ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Drain-Source Voltage VALUE UNIT V V DS 240 Continuous Drain Current at Tamp25°C
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Tamp25Â
cH7Q57Ã
0Q1Q354
001G35S
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Untitled
Abstract: No abstract text available
Text: P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 2 -M ARCH 94 FEATURES * 100 Volt VDS * A \ Ros.on,=20n m JffS Gs E-Line T092 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Drain-Source Voltage V DS -100 V Continuous Drain Current at Tamtj=25°C b
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amtp25Â
cH7Q57Ã
0Q1Q354
001G35S
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