CH7Q
Abstract: n60p HXXXXXXXXX MC6805S2 HD63705 LTC1090 LTC1090AC CD4520 LTC1090C LTC1090M
Text: LTCT090 \ » u n ü \ ß . TECHNOLOGY F€flTUR€S • Software Programmable Features: Unipolar/Bipolar Conversions 4 Differential/8 Single Ended Inputs MSB or LSB First Data Sequence Variable Data Word Length ■ Built-In Sample and Hold ■ Single Supply 5V, 10V or ±5V Operation
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LTCT090
30kHz
LTC1090A)
22/tS
10-Bit
LTC1090
LTC1090
CH7Q
n60p
HXXXXXXXXX
MC6805S2
HD63705
LTC1090AC
CD4520
LTC1090C
LTC1090M
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ZENER DIODE 15Y
Abstract: Zener diode 16y c5v1 zener diode c30 C30 DIODE ZENER 16y zener C4V7 22y diode C3V9 zener diode 11y
Text: BZV49 SERIES C2V7 - C47 SOT89 SILICON PLANAR VOLTAGE REGULATOR DIODES PIN CONFIGURATION ABSOLUTE MAXIMUM RATINGS PARAMETER Voltage Range Nominal Tolerance Maximum Forward Current Power Dissipation at Tamb = 25°C Operating and Storage Temperature Range vz
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BZV49
H7Q578
DS135
ZENER DIODE 15Y
Zener diode 16y
c5v1
zener diode c30
C30 DIODE ZENER
16y zener
C4V7
22y diode
C3V9
zener diode 11y
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Untitled
Abstract: No abstract text available
Text: I Ordering number: EN1789B 2SK545 N0.1789B N-Channel Junction Silicon FET Impedance Converter Applications Applications •Impedance converter applications. • Infrared sensor. Features • Small Iqss• Small Ciss. • Ultracompact package permitting 2SK545-applied sets to be compact.
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EN1789B
2SK545
1789B
2SK545-applied
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Untitled
Abstract: No abstract text available
Text: Ordering number: EN2020A 2SB1141/2SD1681 N 0 .2020 A PNP/NPN Epitaxial Planar Silicon Transistors SAMYO 18V/1.2A Switching Applications A pplications • Converters, relay drivers, low-voltage and high power AF Amp. F eatures • Low saturation voltage and excellent linearity of hp^.
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EN2020A
2SB1141/2SD1681
2SB1141
7n707b
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Untitled
Abstract: No abstract text available
Text: SANYO SEMICONDUCTOR COR S3E D • ? en ? Q ? t . QQlDb'lt. T?4 ■ TSA J T-7 S -Q 7 -Ù 7 | O rdering num ber : EN38gQ PINOUT OVERVIEW Tbe LC7368J is a CMOS switcbable DTMF/pulse dialer 1C for European telephone handsets. It incorporates a 31-digit key buffer memory to support a redial function.
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EN38gQ
LC7368J
31-digit
QQ107QB
LC7368J
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40hz bass filter CIRCUIT diagram
Abstract: No abstract text available
Text: ordering number : EN 271 BA Monolithic Linear 1C L A 79 53 Audio Controller for TV Use Overview The LA7953 Audio Controller is a single-chip, linear IC featuring a built-in expansion circuit. The device also features a 4-input /1-output audio switch, an acoustic mute, a LINE-OUT output, and audio control functions for volume,
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LA7953
30-pin
047jj
DDlci34D
LA7953
40hz bass filter CIRCUIT diagram
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2851 transistor npn
Abstract: C 2851 transistor 2SC4428 EN2851 1S001 transistor 800v
Text: Ordering number: EN 2851 2SC4428 NPN Triple Diffused Planar Silicon Transistor SM YO l i 800V/6A Switching Regulator Applications F e a tu re s . High breakdown voltage, high reliability • F ast switching speed tf: 0.1 ps typ •W ideASO • Adoption of MBIT process
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2SC4428
00V/6A
300ps
2851 transistor npn
C 2851 transistor
2SC4428
EN2851
1S001
transistor 800v
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Untitled
Abstract: No abstract text available
Text: NPN SILICON PLANAR MEDIUM POWER TRANSISTOR ISSUE 2 -MARCH 94 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Collector-Base Voltage Collector-Emitter Voltage VALUE UNIT v CBO 50 V VCEO 45 V Emitter-Base Voltage v EBO 5 V Base Current • b 100 mA Continuous Collector Current
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cH7Q57Ã
001G35S
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3fs 4a
Abstract: No abstract text available
Text: P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 2 - MARCH 94_ FE A T U R E S * 450 Volt V DS * R dsi « . - 1500 ABSOLUTE MAXIMUM RATINGS. SYM BOL PARAMETER Drain-Source Voltage VALUE UNIT V DS -450 Continuous Drain Current a tT am[j=25°C
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cH7Q57Ã
001G35S
3fs 4a
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Untitled
Abstract: No abstract text available
Text: PNP SILICON PLANAR MEDIUM POWER TRANSISTORS ISSUE 2 -J U L Y 94_ FEATURES * 100 Volt V CE0 * 2 A m p continuous current * Low saturation voltage * P,ot=1W a tt ABSOLUTE M A X IM U M RATINGS. Collector-Emitter Voltage Emitter-Base Voltage
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ZTX753
ZTX752
cH7Q57Ã
0Q1Q354
001G35S
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Untitled
Abstract: No abstract text available
Text: P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 2 -MARCH 94 FE A T U R E S * 50 Volt V,DS * R,D Stonr= 10il L o w threshold ABSOLUTE MAXIMUM RATINGS. SYMBOL PARAMETER Drain-Source Voltage Continuous Drain Current at T amtj=25°C VALUE UNIT V DS -50 V •
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cH7Q57Ã
001G35S
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IC LA7681
Abstract: variable resistor LA7680 LA7681 variable resistor picture M343 3 pin variable resistor DIP48S LA7837 LA7838
Text: Ordering number : EN 3343A Monolithic Linear 1C LA7680,7681 N0.3343A SA \YO Single-Chip Signal Processor for Color TV Use I Overview The LA7680 and LA7681 signal processors provide all the components required to decode PA L or NTSC Color television signals. On-chip circuits include VIF, SIF, a video processor, a chroma demodulator, and
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LA7680
LA7681
LA7837
LA7838
LA7680/7681
LA7680,
DIP48S
IC LA7681
variable resistor
variable resistor picture
M343
3 pin variable resistor
DIP48S
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Untitled
Abstract: No abstract text available
Text: NPN SILICON PLANAR MEDIUM POWER TRANSISTOR ISSU E 1 - SEPT 93_ FEATURES * 100 Volt VCE0 * 1 Amp continuous current * P,0,= 1Watt REFER TO ZTX453 FOR GRAPHS ABSOLUTE MAXIMUM RATINGS. PA RA M ETER SY M B O L Collector-Base Voltage
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ZTX453
100ji
cH7Q57Ã
001G35S
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Untitled
Abstract: No abstract text available
Text: SILICON EPITAXIAL PLANAR ABRUPT TUNER DIODE ISSUE 2 - SEPTEMBER 94_ DIODE PIN CONNECTION 2 ANODE CATHODE ILECTRICAL CHARACTERISTICS at Tamb=25°C SYMBOL PARAMETER MIN TYP MAX 30 UNIT Reverse Breakdown Voltage Vr Reverse Voltage Leakage Ir Case Capacitance
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ZC744
50MHz
cH7Q57Ã
001G35S
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Untitled
Abstract: No abstract text available
Text: N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 2 -M A R C H 94_ FEATURES * 200 Volt V DS * RDS on =10« * Low threshold APPLICATIONS * Telephone handsets REFER TO ZVNL120A FOR GRAPHS ABSOLUTE M A X IM U M RATINGS. SY M B O L PARAM ETER
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ZVNL120A
cH7Q57Ã
001G35S
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Untitled
Abstract: No abstract text available
Text: NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTOR F X T 6 1 4 ISSUE 1 - FEB 94 FEATURES * 100 Volt VCE0 * * /C \ ¿ 7 ffh—' //iff Í//H 800 mA continuous current Gain of 10K at lc=500mA * Pt0,= 1W att APPLICATIONS * Lamp, solenoid and relay drivers E
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500mA
BCX38
cH7Q57Ã
001G35S
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BS170P
Abstract: No abstract text available
Text: N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET BS170P IS S U E 2 - S E P T 93 FE A T U R E S * 60 Volt V DS * R D S c n r5 a REFER TO ZVN3306A FOR G RAPH S ABSOLUTE MAXIMUM RATINGS. SYMBOL Drain-Source Voltage VDS 60 V Continuous Drain Current a tT amb=25°C
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BS170P
ZVN3306A
cH7Q57Ã
001G35S
BS170P
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Untitled
Abstract: No abstract text available
Text: P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 2 -MARCH 94_ FEATURES * 60 Volt V,DS * R ,DS on ' 5£i REFER TO ZVP2106A FOR GRAPHS ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Drain-Source Voltage VDS VALUE Continuous Drain Current at Tam(3=25°C
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ZVP2106A
cH7Q57Ã
0Q1Q354
001G35S
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Ztx458
Abstract: No abstract text available
Text: NPN SILICON PLANAR MEDIUM POWER HIGH VOLTAGE TRANSISTOR ISSU E 2 - MARCH 1994_ FEATURES * 400 Volt VCE0 * 0.5 Am p continuous current * 1 Watt E E-Line T092 Compatible ABSOLUTE M A X IM U M RATINGS. PARAMETER SYM BO L Collector-Base Voltage
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cH7Q57Ã
001G35S
Ztx458
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Untitled
Abstract: No abstract text available
Text: P-CHANNEL ENHANCEMENT MODE VERTICAL D M O S FET ISSUE 2 -M ARCH 94 FEATURES * 100 Volt VDS * RDS.on =8fl / Ds REFER TO ZVP2110A FOR GRAPHS E-Line T092 Compatible ABSOLUTE M A X IM U M RATINGS. PARAMETER SY M B O L Drain-Source Voltage V DS -100 V b -230 mA
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ZVP2110A
cH7Q57Ã
001G35S
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Untitled
Abstract: No abstract text available
Text: NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR ISSUE 2 - M A Y 94_ FEATURES * 12 Volt V CE0 * Gain of 400 at lc=3 A m p s * Very low saturation voltage A P P L IC A T IO N S * Darlington replacement * Flash gu n convertors
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cH7Q57Ã
0Q1Q354
001G35S
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Untitled
Abstract: No abstract text available
Text: PNP SILICON PLANAR M EDIUM POWER HIGH GAIN TRANSISTOR ZTX790A ISSU E 2 -A P R IL 94_ FEATURES * 40 Volt VCE0 * Gain of 200 at lc=1 Am ps * Very low saturation voltage APPLICATIONS * Darlington replacement * Siren driver
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ZTX790A
cH7Q57Ã
001G35S
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Untitled
Abstract: No abstract text available
Text: NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTOR FXT601B ISSUE 1 - MARCH 94- - FEATURES * 160 Volt VCE0 * Gain of 5K at lc=1 Amp * Ptot= 1 W att APPLICATIONS * Lamp, solenoid and relay drivers * Replacement of T 0 126 and T0220 packages
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FXT601B
T0220
ZTX601B
cH7Q57Ã
001G35S
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Untitled
Abstract: No abstract text available
Text: PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR ISSUE 2 -MARCH 94_ FEATURES * High voltage APPLICATIONS * T e le p h o n e dialler circuit ABSOLUTE M A XIM U M RATINGS. PARAMETER SYM BO L Collector-Base Voltage V A LU E U N IT V V v CBO
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cH7Q57Ã
001G35S
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