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    CEM9 Price and Stock

    UMW CEM9926A

    MOSFET 2N-CH 20V 7A 8SOP
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    DigiKey CEM9926A Reel 3,000 3,000
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    CEM9926A Digi-Reel 3,000 1
    • 1 $0.49
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    CEM9926A Cut Tape 3,000 1
    • 1 $0.49
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    Micron Technology Inc MT29F16T08GSLCEM9-QB:C

    IC FLASH 16TBIT FBGA
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    DigiKey MT29F16T08GSLCEM9-QB:C Box 1,120
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    Avnet Americas MT29F16T08GSLCEM9-QB:C Tray 26 Weeks 1,120
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    Mouser Electronics MT29F16T08GSLCEM9-QB:C
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    Newark MT29F16T08GSLCEM9-QB:C Bulk 1,120
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    Micron Technology Inc MT29F16T08GSLCEM9-QB:C-TR

    IC FLASH 16TBIT FBGA
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey MT29F16T08GSLCEM9-QB:C-TR Reel 1,500
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    Fox Electronics FC4SDCCEM9.81293-T1

    Crystal 9.81293MHz 2-Pin SMD T/R - Tape and Reel (Alt: FC4SDCCEM9.81293-T)
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    Avnet Americas FC4SDCCEM9.81293-T1 Reel 1,000
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    Micron Technology Inc MT29F16T08GSLCEM9-QB:C TR

    QLC 16T 2TX8 FBGA - Tape and Reel (Alt: MT29F16T08GSLCEM9-)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas MT29F16T08GSLCEM9-QB:C TR Reel 1,500
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    Mouser Electronics MT29F16T08GSLCEM9-QB:C TR
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    Find more CEM9 price and stock on Findchips.com

    CEM9 Datasheets (34)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    CEM9400 Chino-Excel Technology P-Channel Enhancement Mode Field Effect Transistor Scan PDF
    CEM9400A Chino-Excel Technology P-Channel Enhancement Mode Field Effect Transistor Scan PDF
    CEM9407 Chino-Excel Technology P-Channel Enhancement Mode MOSFET Scan PDF
    CEM9407A Chino-Excel Technology P-Channel Enhancement Mode Field Effect Transistor Original PDF
    CEM9410 Chino-Excel Technology N-Channel Enhancement Mode Field Effect Transistor Scan PDF
    CEM9410A Chino-Excel Technology N-Channel Enhancement Mode Field Effect Transistor Scan PDF
    CEM9424 Chino-Excel Technology P-Channel Enhancement Mode Field Effect Transistor Original PDF
    CEM9424 Chino-Excel Technology P-Channel Enhancement Mode Field Effect Transistor Scan PDF
    CEM9425 Chino-Excel Technology P-Channel Enhancement Mode Field Effect Transistor Scan PDF
    CEM9426 Chino-Excel Technology N-Channel Enhancement Mode Field Effect Transistor Scan PDF
    CEM9430 Chino-Excel Technology P-Channel Enhancement Mode MOSFET Scan PDF
    CEM9430A Chino-Excel Technology P-Channel Enhancement Mode MOSFET Scan PDF
    CEM9433 Chino-Excel Technology P-Channel Enhancement Mode Field Effect Transistor Scan PDF
    CEM9435 Chino-Excel Technology P-Channel Enhancement Mode MOSFET Scan PDF
    CEM9435A Chino-Excel Technology P-Channel Enhancement Mode MOSFET Scan PDF
    CEM9436A Chino-Excel Technology N-Channel Enhancement Mode Field Effect Transistor Original PDF
    CEM9445 Chino-Excel Technology N-Channel Enhancement Mode Field Effect Transistor Original PDF
    CEM9925 Chino-Excel Technology Dual N-Channel Enhancement Mode Field Effect Transistor Original PDF
    CEM9925 Chino-Excel Technology Dual N-Channel Enhancement Mode Field Effect Transistor Scan PDF
    CEM9926 Chino-Excel Technology Dual N-Channel Enhancement Mode Field Effect Transistor Scan PDF

    CEM9 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    52A32

    Abstract: CEM9926A
    Text: CEM9926A Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES 5 20V, 6A, RDS ON = 30mΩ @VGS = 4.5V. RDS(ON) = 40mΩ @VGS = 2.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired.


    Original     		PDF CEM9926A 52A32 CEM9926A

    CEM9952A

    Abstract: No abstract text available
    Text: CEM9952A Dual Enhancement Mode Field Effect Transistor N and P Channel FEATURES 30V, 3.7A, RDS(ON) = 80mΩ @VGS = 10V. RDS(ON) = 110mΩ @VGS = 4.5V. -30V, -2.9A, RDS(ON) = 100mΩ @VGS = -10V. RDS(ON) = 150mΩ @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON).


    Original     		PDF CEM9952A CEM9952A

    CEM9953A

    Abstract: No abstract text available
    Text: CEM9953A Dual P-Channel Enhancement Mode Field Effect Transistor FEATURES 5 -30V, -3.5A, RDS ON = 80mΩ @VGS = -10V. RDS(ON) = 130mΩ @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired.


    Original     		PDF CEM9953A CEM9953A

    CEM9936A

    Abstract: No abstract text available
    Text: CEM9936A Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES 5 30V, 5.4A, RDS ON = 40mΩ @VGS = 10V. RDS(ON) = 55mΩ @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired.


    Original     		PDF CEM9936A CEM9936A

    CEM9433

    Abstract: No abstract text available
    Text: CEM9433 AUGUST 1999 P-Channel Enhancement Mode Field Effect Transistor FEATURES 5 -20V , -5.4A , RDS ON =65mΩ @VGS=-4.5V. RDS(ON)=100mΩ @VGS=-2.5V. Super high dense cell design for extremely low RDS(ON). D D D D 8 7 6 5 High power and current handing capability.


    Original     		PDF CEM9433 CEM9433

    c5v8

    Abstract: CEM9945
    Text: CEM9945 March 1998 Dual N-Channel Enhancement Mode Field Effect Transistor 5 FEATURES 60V , 3.3A , RDS ON =100m Ω @VGS=10V. RDS(ON)=200m Ω @VGS=4.5V. D1 D1 D2 D2 8 7 6 5 1 2 3 S1 G1 S2 Super high dense cell design for extremely low RDS(ON). High power and current handing capability.


    Original     		PDF CEM9945 c5v8 CEM9945

    CEM9926A

    Abstract: No abstract text available
    Text: CEM9926A PRELIMINARY Dual N-Channel Enhancement Mode Field Effect Transistor 5 FEATURES 20V , 6A , RDS ON =30m Ω @VGS=4.5V. RDS(ON)=40m Ω @VGS=2.5V. D1 D1 D2 D2 8 7 6 5 1 2 3 S1 G1 S2 Super high dense cell design for extremely low RDS(ON). High power and current handing capability.


    Original     		PDF CEM9926A 300ms CEM9926A

    CEM9926

    Abstract: CEM9
    Text: CEM9926 Aug. 1998 Dual N-Channel Enhancement Mode Field Effect Transistor 5 FEATURES 20V , 6A , RDS ON =30m Ω @VGS=4.5V. RDS(ON)=40m Ω @VGS=2.5V. D1 D1 D2 D2 8 7 6 5 1 2 3 S1 G1 S2 Super high dense cell design for extremely low RDS(ON). High power and current handing capability.


    Original     		PDF CEM9926 300ms CEM9926 CEM9

    CEM9939A

    Abstract: PF328
    Text: CEM9939A Nov. 2001 Dual Enhancement Mode Field Effect Transistor N and P Channel FEATURES 5 30V ,7A , RDS(ON)=30m Ω @VGS=10V. RDS(ON)=42m Ω @VGS=4.5V. -30V , -3.5A , RDS(ON)=100mΩ @VGS=-10V. RDS(ON)=160m Ω @VGS=-4.5V. Super high dense cell design for extremely low RDS(ON).


    Original     		PDF CEM9939A 30ating CEM9939A PF328

    CEM9410

    Abstract: No abstract text available
    Text: CEM9410 March 1998 N-Channel Enhancement Mode Field Effect Transistor FEATURES 5 30V , 7A , RDS ON =30mΩ @VGS=10V. RDS(ON)=50mΩ @VGS=4.5V. Super high dense cell design for extremely low RDS(ON). D D D D 8 7 6 5 1 2 3 4 N/C S S G High power and current handing capability.


    Original     		PDF CEM9410 CEM9410

    CEM9436A

    Abstract: No abstract text available
    Text: CEM9436A PRELIMINARY N-Channel Enhancement Mode Field Effect Transistor 5 FEATURES 30V , 6.2A , RDS ON =38m Ω @VGS=10V. RDS(ON)=52m Ω @VGS=4.5V. Super high dense cell design for extremely low RDS(ON). D D D D 8 7 6 5 High power and current handing capability.


    Original     		PDF CEM9436A CEM9436A

    CEM9926

    Abstract: No abstract text available
    Text: CEM9926 Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES 5 20V, 6A, RDS ON = 30mΩ @VGS = 4.5V. RDS(ON) = 40mΩ @VGS = 2.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired.


    Original     		PDF CEM9926 CEM9926

    CEM9424

    Abstract: No abstract text available
    Text: CEM9424 P-Channel Enhancement Mode Field Effect Transistor FEATURES 5 -20V, -7.7A, RDS ON = 25mΩ @VGS = -4.5V. RDS(ON) = 35mΩ @VGS = -2.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired.


    Original     		PDF CEM9424 CEM9424

    CEM9946

    Abstract: No abstract text available
    Text: CEM9946 Dual N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 30V, 4.3A, RDS ON = 52mΩ @VGS = 10V. RDS(ON) = 80mΩ @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired.


    Original     		PDF CEM9946 CEM9946

    52A32

    Abstract: CEM9926A
    Text: CEM9926A Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES 20V, 6A, RDS ON = 27mΩ @VGS = 4.5V. RDS(ON) = 40mΩ @VGS = 2.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired.


    Original     		PDF CEM9926A 52A32 CEM9926A

    CEM9436A

    Abstract: No abstract text available
    Text: CEM9436A N-Channel Enhancement Mode Field Effect Transistor FEATURES 5 30V, 6.2A, RDS ON = 38mΩ @VGS = 10V. RDS(ON) = 52mΩ @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired.


    Original     		PDF CEM9436A CEM9436A

    CEM9435A

    Abstract: No abstract text available
    Text: CEM9435A March 1998 P-Channel Enhancement Mode MOSFET 5 FEATURES -30V , -5.3A , RDS ON =50m Ω @VGS=-10V. RDS(ON)=90m Ω @VGS=-4.5V. D D D D 8 7 6 5 Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Surface Mount Package.


    Original     		PDF CEM9435A CEM9435A

    CEM9410

    Abstract: No abstract text available
    Text: CEM9410 N-Channel Enhancement Mode Field Effect Transistor FEATURES 5 30V, 7A, RDS ON = 30mΩ @VGS = 10V. RDS(ON) = 50mΩ @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired.


    Original     		PDF CEM9410 CEM9410

    CEM9435A

    Abstract: No abstract text available
    Text: CEM9435A P-Channel Enhancement Mode Field Effect Transistor FEATURES -30V, -5.3A, RDS ON = 50mΩ @VGS = -10V. RDS(ON) = 90mΩ @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired.


    Original     		PDF CEM9435A CEM9435A

    CEM9936

    Abstract: CEM9936A
    Text: CEM9936A PRELIMINARY Dual N-Channel Enhancement Mode Field Effect Transistor 5 FEATURES 30V , 5.4A , RDS ON =40mΩ @VGS=10V. RDS(ON)=55m Ω @VGS=4.5V. D1 D1 D2 D2 8 7 6 5 1 2 3 S1 G1 S2 Super high dense cell design for extremely low RDS(ON). High power and current handing capability.


    Original     		PDF CEM9936A CEM9936 CEM9936A

    CEM9435

    Abstract: No abstract text available
    Text: CEM9435 March 1998 P-Channel Enhancement Mode MOSFET FEATURES • - 3 0 V , - 5 . 1 A , R ds o n =55 itiQ RDS(ON)=105mQ @ V g s = -10 V . @ V gs = -4 .5 V . • Super high dense cell design for extremely low Rds(on). • High power and current handing capability.


    OCR Scan     		PDF CEM9435 55itiQ 105mQ CEM9435

    JD 250

    Abstract: 34A4S CEM9400A
    Text: CEM9400A PRELIMINARY P-Channel Enhancement Mode Field Effect Transistor FEATURES • -30V , - 3 .4 A , R ds o n =1 30mQ @Vgs=-10V. • Super high dense cell design for extremely low R ds(on). • High power and current handing capability. • Surface Mount Package.


    OCR Scan     		PDF CEM9400A 130itiQ JD 250 34A4S CEM9400A

    CEM9947

    Abstract: No abstract text available
    Text: CEM9947 Dual P-Channel Enhancement Mode MOSFET FEATURES • -20V, -3.5A, RDS ON =1 OOmQ @VGS=-10V. -1A, RDS(ON)=190mQ @VGS=-4.5V. • Super high dense cell design for extremely low RDS(ON). » High power and current handing capability. » Surface Mount Package.


    OCR Scan     		PDF CEM9947 CEM9947

    Calex

    Abstract: T7779 CEM900 CEM801
    Text: C/LEX 5 to 6 WATT DC/DC CONVERTERS CEM900 SERIES SPECIFICATIONS Ail S pecifications Typical At N om inal Line. Full L oad, and 2 5 ° C U nless O therw ise N oted . 2:1 Input Range Efficiency to 80% Pi Input Filter Short Circuit Protection 100 kHz Switching Frequency


    OCR Scan     		PDF CEM900 B2-38 Calex T7779 CEM801