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Excelitas Technologies Corporation C30642GH SENSOR PHOTODIODE TO5
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	C30642GH	Box	114		1	1 $300.3 10 $293.25 100 $293.25 1000 $293.25 10000 $293.25	Buy Now

C30642 Datasheets (7)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
C30642		PerkinElmer Optoelectronics	Large-Area InGaAs Photodiodes		Original	PDF
C30642		RCA Solid State	Photodiodes		Scan	PDF
C30642G		PerkinElmer Optoelectronics	Large-area InGaAs photodiode. TO-5 with glass window.		Original	PDF
C30642G-DTC		PerkinElmer Optoelectronics	Large-area InGaAs photodiode. TE-cooler option, 2-stage TE cooler.		Original	PDF
C30642GH		Excelitas Technologies	INGAAS PIN GLASS WINDOW 2MM TO-5		Original	PDF
C30642GH-LC		Excelitas Technologies	INGAAS PIN, 2.0MM, TO-18, GLASS,		Original	PDF
C30642G-TC		PerkinElmer Optoelectronics	Large-area InGaAs photodiode. TE-cooler option, 1-stage TE cooler.		Original	PDF

C30642 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
hte 2642 Abstract: HTE-2642 C30642E ESILICON PerkinElmer Optoelectronics AQAP-1 near IR photodiodes pin Photodiode 1550 nm C30619 C30641 Text: Description The PerkinElmer family of large-area InGaAs PIN photodiodes provide high responsivity from 800 nm to 1700 nm for applications Large-Area InGaAs Photodiodes C30619, C30641, C30642, C30665 EVERYTHING IN A including optical power meters, fiber optic test	Original	PDF	C30619, C30641, C30642, C30665 C30619 C30641 C30642 hte 2642 HTE-2642 C30642E ESILICON PerkinElmer Optoelectronics AQAP-1 near IR photodiodes pin Photodiode 1550 nm C30619
hte 2642 Abstract: InGaas PIN photodiode, 1550 sensitivity HTE-2642 C30642E C30642 PerkinElmer 1700 ESILICON C30641 C30665 C30619 Text: C30619, C30641, C30642, C30665 Figure 9. Package D15: TO-5 with Glass Window. Ordering Guide C30 # # # L - X X X TE-Cooler Option: TC: DTC: 1-stage TE cooler 2-stage TE cooler Not yet available for C30665 Window Option: E: G: Silicon Glass (See below for availability)	Original	PDF	C30619, C30641, C30642, C30665 C30665) C30619 C30641 C30642 ISO-9001 hte 2642 InGaas PIN photodiode, 1550 sensitivity HTE-2642 C30642E C30642 PerkinElmer 1700 ESILICON C30665 C30619
C1383 NPN transistor collector base and emitter Abstract: NPN transistor c1383 C1383 transistor C1383 NPN transistor Light-Dependent Resistor specification c1983 transistor pin configuration of C1383 transistor LHI968 lhi878 c1383 Text: Advanced sensor technologies for today’s breakthrough applications Table of Contents . www.optoelectronics.perkinelmer.com Table of Contents PerkinElmer Optoelectronics provides Digital Imaging, Sensor and Lighting technologies to speed the development of breakthrough applications for customers in biomedical,	Original	PDF	10-foot C1383 NPN transistor collector base and emitter NPN transistor c1383 C1383 transistor C1383 NPN transistor Light-Dependent Resistor specification c1983 transistor pin configuration of C1383 transistor LHI968 lhi878 c1383
FND-100Q Abstract: FND-100 C30724E YAG-444-4A InGaAs APD quadrant PerkinElmer fnd-100q Si apd photodiode nir emitter leds with 700 to 900 nm SPCM-AQR C30950E Text: High-performance emitters & detectors for the most demanding applications PerkinElmer Optoelectronics PerkinElmer Optoelectronics provides Sensor, Lighting and Digital Imaging technologies to speed the development of breakthrough applications for customers in industrial, safety & security, consumer and biomedical markets.	Original	PDF	CAT0506P FND-100Q FND-100 C30724E YAG-444-4A InGaAs APD quadrant PerkinElmer fnd-100q Si apd photodiode nir emitter leds with 700 to 900 nm SPCM-AQR C30950E
InGaAs quadrant Abstract: C30822E UV245BG UV-215BQ C30971 C30641EH-TC FFD-100 YAG-100A Text: Photodiodes for High-Performance Applications PIN Photo- PIN Photodiodes InGaAs and Si PIN Diodes, Quadrant Detectors, UV-Enhanced diodes For Industrial Applications InGaAs and Si PIN Diodes – Quadrant Detectors – UV-Enhanced Applications • Telecom	Original	PDF	C30845EH YAG-444-4AH DTC-140H InGaAs quadrant C30822E UV245BG UV-215BQ C30971 C30641EH-TC FFD-100 YAG-100A
C30642E Abstract: rca 514 C30618 C30619 C30641 C30642 T018 el 85 Text: E G & G/CANADA/OPTOELEK ^ V n l l fl i f J f 1 I ID ]> • E le c tr o O p tic s 'T ^ £/ / 'S 3 3D30bl0 OODDDTD DÔ6 ■ CANA Photodiodes C30618, C30619, C30641, C30642 ¥ -	OCR Scan	PDF	C30618, C30619, C30641, C30642 ED-0020/03/88 C30642E rca 514 C30618 C30619 C30641 C30642 T018 el 85
C30642E Abstract: No abstract text available Text: E G & G/CANADA/OPTOELEK 10 ]> • 3G3QblQ OOODGTG Dûô 'T ^ £/ / " 5 3 M CANA 0 * ÆW Electro Photodiodes ■ miff ■ O ptics C30618, C30619, C30641, C30642 ■ B DATA SHEET Large Area Planar PIN InGaAs Photodiodes ■ Large areas with uniform responsivity	OCR Scan	PDF	C30618, C30619, C30641, C30642 C30642E
Untitled Abstract: No abstract text available Text: E G & G/CANADA/OPTOELEK Il 47E D • 3D3DblO ■_< — GODDPòfl 2 ■ CANA 1550nm High Power Pulsed Laser C Ij K IJ OPTOELECTRONICS C86091E T-y -cs ■ ■ ■ ■ H T he C 86091E is a high pow er single elem ent pulsed laser diode. W avelength is centered at 1550 nm to take advantage	OCR Scan	PDF	1550nm C86091E 86091E
EG*G Optoelectronics Abstract: C30642 eg and g laser diode C30641 indium gallium arsenide phosphide Indium Gallium Arsenide Phosphide lasers C30618 C30619 C86091E Text: Il E G & G/CANADA/OPTOELEK •_ 47E D ■ □□□□Pflfl 2 ■ CANA 3030bl0 1550nm High Power Pulsed Laser I-» OPTOELECTRONICS C86091E -r-H h O S ■ ■ ■ ■ ■ The C 86091E is a high pow er single elem ent pulsed laser diode. W avelength is centered at 1550 nm to take advantage	OCR Scan	PDF	3030bl0 1550nm C86091E C86091E ED-0053/06/91 EG*G Optoelectronics C30642 eg and g laser diode C30641 indium gallium arsenide phosphide Indium Gallium Arsenide Phosphide lasers C30618 C30619