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    BUZ94 Search Results

    BUZ94 Datasheets (6)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    BUZ94 Philips Semiconductors PowerMOS Transistor Original PDF
    BUZ94 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    BUZ94 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    BUZ94 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    BUZ94 Siemens SIPMOS Power Transistors Scan PDF
    BUZ94 Siemens Power Transistors Scan PDF

    BUZ94 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BUZ901P

    Abstract: BUZ900P BUZ900 buz90a d44c3 buz94 BUZ77 BUZ345 DTS107 DTS410
    Text: STI Type: BUZ341 Notes: Breakdown Voltage: 200 Continuous Current: 33 RDS on Ohm: 0.07 Trans Conductance Mhos: 15 Trans Conductance A: 21 Gate Threshold min: 2.1 Gate Threshold max: 4.0 Resistance Switching ton: 60 Resistance Switching toff: 680 Resistance Switching ID: 3.0


    Original     		PDF BUZ341 O-247 BUZ344 BUZ346 O-204AA/TO-3: DTS409 DTS410 BUZ901P BUZ900P BUZ900 buz90a d44c3 buz94 BUZ77 BUZ345 DTS107 DTS410

    BUZ94

    Abstract: No abstract text available
    Text: PowerMOS transistor_ BUZ94_ N AMER PHILIPS/DISCRETE QtE D • L 3S3T31 0014b75 4 ■ July 1987 QUICK REFERENCE DATA GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a metal envelope. This device is intended for use in


    OCR Scan     		PDF BUZ94_ 3S3T31 0014b75 BUZ94 T-39-13 bb53T31 0014bfll BUZ94

    BUZ94

    Abstract: mx d 362
    Text: PowerMOS transistor_ BUZ94- N AMER PHILIPS/DISCRETE - — - — . “ OtE D • ^1=53^31 DOmt.75 4 ■ " “ r-3 7 -1 3 July 1987 GENERAL DESCRIPTION N-channel enhancement mode fleld-effect power transistor in a


    OCR Scan     		PDF BUZ94 r-37-13 bb53131 T-39-13 480Vv_ BUZ94 mx d 362

    9a2 diode

    Abstract: No abstract text available
    Text: SIEMENS SIPMOS Power Transistor BUZ 94 N channel Enhancement m ode Type ^ DS Id ^ D S o n Package 11 Ordering Code BUZ 94 600 V 7.8 A 0.9 n TO-204 AA C67078-A101 9-A2 Maxim um Ratings Parameter Symbol Continuous drain current, Tc = 27 "C Id 7.8 Pulsed drain current, Tc = 25 "C


    OCR Scan     		PDF O-204 C67078-A101 9a2 diode

    transistor f6 13003

    Abstract: equivalent transistor bj 131-6 transistor Eb 13003 BM BB112 smd TRANSISTOR code marking 2F 6n a1211 lg CQY58 BU705 TRANSISTOR 131-6 BJ 026 philips om350
    Text: W IDEBAND TRANSISTORS AND W IDEBAND HYBR ID 1C MODULES page P refa ce. 3 Selection guide Wideband transistors.


    OCR Scan     		PDF SC08b transistor f6 13003 equivalent transistor bj 131-6 transistor Eb 13003 BM BB112 smd TRANSISTOR code marking 2F 6n a1211 lg CQY58 BU705 TRANSISTOR 131-6 BJ 026 philips om350

    IRFD1Z3 equivalent

    Abstract: 8N60 equivalent TP8N20 TP8N10 siemens semiconductor manual What is comparable with IRF 3205 2N6823 irf8408 MTM5N90 designers datasheet smps cook circuit
    Text: The information in this book has been carefully checked and is believed to be accurate; however, no responsibility is assumed for inaccuracies. Motorola reserves the right to make changes with­ out further notice to any products herein to improve reliability, function or design. Motorola does not


    OCR Scan     		PDF VP1204N TP8P08 5001D VP1206N 1208N 5002D 1209N VP1209N IRFD1Z3 equivalent 8N60 equivalent TP8N20 TP8N10 siemens semiconductor manual What is comparable with IRF 3205 2N6823 irf8408 MTM5N90 designers datasheet smps cook circuit

    MTM13N50E

    Abstract: P40N10 24N40 p50n05 8n50e Power MOSFET Cross Reference Guide motorola 20n50e TP50N05E IRF510 mosfet irf640 33N10E
    Text: ir tmos Cross-Reference The follow ing table represents a cro ss-re fe re n ce guide for all T M O S P ow er M O SFETs w hich are m an ufacture d directly by M otorola. W here the M otorola part nu m be r differs from the Industry part num ber, the M otorola de vice is a “form , fit and fu n ctio n ”


    OCR Scan     		PDF BUZ10 BUZ11 BUZ11A BUZ11S2 BUZ15 BUZ171 BUZ20 BUZ21 BUZ23 BUZ31 MTM13N50E P40N10 24N40 p50n05 8n50e Power MOSFET Cross Reference Guide motorola 20n50e TP50N05E IRF510 mosfet irf640 33N10E

    FET BFW10

    Abstract: KP101A FET BFW11 BDX38 KPZ20G CQY58A BFW10 FET RPW100 B0943 OF FET BFW11
    Text: INDEX _ INDEX OF TYPE NUM BERS The inclusion of a type number in this publication does not necessarily imply its availability. Type no. book section Type no. book section Type no. book section BA220 BA221 BA223 BA281 BA314 SCOI SCOI SCOI SCOI


    OCR Scan     		PDF BA220 BA221 BA223 BA281 BA314 BA315 BA316 BA317 BA318 BA423 FET BFW10 KP101A FET BFW11 BDX38 KPZ20G CQY58A BFW10 FET RPW100 B0943 OF FET BFW11