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Mueller Electric Company BU-P4115 SHORTING BAR 2-WAY 1=10 LINKS
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	BU-P4115	Bag	1		1	1 $38.59 10 $32.066 100 $38.59 1000 $38.59 10000 $38.59	Buy Now
Mouser Electronics	BU-P4115					1 $38.58 10 $31.24 100 $30.09 1000 $30.09 10000 $30.09	Get Quote
Newark	BU-P4115	Pack			28	1 $38.58 10 $38.58 100 $35.88 1000 $30.87 10000 $28.17	Buy Now
RS	BU-P4115	Package			1	1 $38.98 10 $35.08 100 $35.08 1000 $35.08 10000 $35.08	Get Quote
Onlinecomponents.com	BU-P4115		10			1 $37.79 10 $33.22 100 $29.58 1000 $28.84 10000 $28.84	Buy Now

Master Electronics	BU-P4115					1 $37.79 10 $33.22 100 $29.58 1000 $28.84 10000 $28.84	Buy Now
Mueller Electric Company BU-P4160 CONN BNC RCPT STR 50 OHM SOLDER
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	BU-P4160	Bag	1		1	1 $4.34 10 $3.61 100 $4.34 1000 $3.15871 10000 $3.15871	Buy Now
Mouser Electronics	BU-P4160		14			1 $4.35 10 $3.52 100 $3.39 1000 $3.09 10000 $3.09	Buy Now
Newark	BU-P4160	Bulk			243	1 - 10 - 100 $4.05 1000 $3.48 10000 $3.18	Buy Now
RS	BU-P4160	Bulk			1	1 $5.23 10 $4.19 100 $3.66 1000 $3.66 10000 $3.66	Get Quote
Onlinecomponents.com	BU-P4160					1 - 10 $4.75 100 $3.8 1000 $3.33 10000 $3.16	Buy Now

TME	BU-P4160				1	1 $4.1 10 $3.86 100 $3.63 1000 $3.63 10000 $3.63	Get Quote
Master Electronics	BU-P4160					1 - 10 $4.75 100 $3.8 1000 $3.33 10000 $3.16	Buy Now
Siemens BUP410D
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Bristol Electronics	BUP410D		197			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Quest Components	BUP410D		480			1 $7.5 10 $7.5 100 $3.25 1000 $3 10000 $3	Buy Now
	BUP410D		153			1 $7.5 10 $7.5 100 $3.5 1000 $3.25 10000 $3.25	Buy Now
INFINEON B BUP410D INSULATED GATE BIPOLAR TRANSISTOR, 13A I(C), 600V V(BR)CES, N-CHANNEL, TO-220AB
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Quest Components	BUP410D		2,800			1 $7.5 10 $7.5 100 $7.5 1000 $3.75 10000 $3.75	Buy Now

BUP41 Datasheets (6)

Part	Manufacturer	Description	Datasheet Type	PDF
BUP41	Semelab	Silicon NPN Epitaxial Planar Transistor	Scan	PDF
BUP410	Siemens	IGBT (Low forward voltage drop High switching speed Low tail current Latch-up free Avalanche rated	Original	PDF
BUP410D	Infineon Technologies	IGBT With Antiparallel Diode	Original	PDF
BUP410D	Siemens		Original	PDF
BU-P4115	Mueller Electric	Accessories, Test and Measurement, SHORTING BAR, 2-WAY	Original	PDF
BU-P4160	Mueller Electric	Coaxial Connectors (RF), Connectors, Interconnects, CONN BNC JACK STR 50 OHM SOLDER	Original	PDF

BUP41 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
BUP314 Abstract: BUP307 igbt types siemens bup314 BUP401 BUZ334 BUZ MOSFET MOSFET welding INVERTER 334 mosfet flyback inverter welding Text: APPLICATIONS POWER SEMICONDUCTORS Andreas Bachofner ● Michael Herfurth ● Michael Schmitt High-speed IGBTs: Fast switching at an attractive price Developed from secondgeneration IGBTs, highspeed IGBTs insulated gate bipolar transistors are particularly economical for	Original	PDF	O-220 O-218 BUP314 BUP307 igbt types siemens bup314 BUP401 BUZ334 BUZ MOSFET MOSFET welding INVERTER 334 mosfet flyback inverter welding
SGP02N60 Abstract: SGU02N60 SGB02N60 SGD02N60 BUP410D Text: Preliminary data SGP02N60, SGB02N60, SGD02N60, SGU02N60 Fast S-IGBT in NPT-Technology • 75 % lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time 10 µs • Designed for moderate and high frequency applications:	Original	PDF	SGP02N60, SGB02N60, SGD02N60, SGU02N60 SGP02N60 O-220AB Q67041-A4707-A2 SGB02N60 O-263AB Q67041-A4707-A4 SGP02N60 SGU02N60 SGB02N60 SGD02N60 BUP410D
BUP410D Abstract: SGB06N60 SGD06N60 SGP06N60 SGU06N60 Text: Preliminary data SGP06N60, SGB06N60, SGD06N60, SGU06N60 Fast S-IGBT in NPT-Technology • 75 % lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time 10 µs • Designed for moderate and high frequency applications:	Original	PDF	SGP06N60, SGB06N60, SGD06N60, SGU06N60 SGP06N60 O-220AB Q67041-A4709-A2 SGB06N60 O-263AB Q67041-A4709-A4 BUP410D SGB06N60 SGD06N60 SGP06N60 SGU06N60
2A mosfet igbt driver stage Abstract: igbt qualification circuit S-IGBT igbt 600V IGBT 600V 16 siemens igbt UPS SIEMENS zvs flyback driver BUP410 SGP06N60 Text: TECHNOLOGY A MOSFET alternative for switching frequencies up to more than 300 kHz High-speed 600V IGBT in NPT technology Because of its many advantages over PT technology, NPT technology has gained increasing acceptance for IGBTs with breakdown voltages of over 1 kV. Siemens is now continuing this logical progression with	Original	PDF	00V-NPT-IGBT, 2A mosfet igbt driver stage igbt qualification circuit S-IGBT igbt 600V IGBT 600V 16 siemens igbt UPS SIEMENS zvs flyback driver BUP410 SGP06N60
irfb4115 Abstract: BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor Text: 573 Technical portal and online community for Design Engineers - www.element-14.com Discrete & Power Devices Page 700 Bridge Rectifiers . . . . . . . . . . . . . . . . . . . . . . . . Diodes Schottky . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .	Original	PDF	element-14 F155-6A F155-10A F165-15A F175-25A irfb4115 BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor
SGP02N60 Abstract: BUP410D Text: SGP02N60 Preliminary data IGBT • Low forward voltage drop • High switching speed • Low tail current • Latch-up free • Avalanche rated Pin 1 Pin 2 G Pin 3 C E Type VCE IC Package Ordering Code SGP02N60 600V 2A TO-220 AB Q67040-A . . . . Maximum Ratings	Original	PDF	SGP02N60 O-220 Q67040-A BUP410D Apr-07-1998 SGP02N60 BUP410D
Q67041-A4709 Abstract: BUP410D SGP06N60 Text: SGP06N60 Preliminary data IGBT • Low forward voltage drop • High switching speed • Low tail current • Latch-up free • Avalanche rated Pin 1 Pin 2 G Pin 3 C E Type VCE IC Package Ordering Code SGP06N60 600V 6A TO-220 AB Q67041-A4709-A2 Maximum Ratings	Original	PDF	SGP06N60 O-220 Q67041-A4709-A2 BUP410D Apr-07-1998 Q67041-A4709 BUP410D SGP06N60
BUP410D Abstract: SGD04N60 SGB04N60 SGP04N60 SGU04N60 SIEMENS dpak diode Text: Preliminary data SGP04N60, SGB04N60, SGD04N60, SGU04N60 Fast S-IGBT in NPT-Technology • 75 % lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time 10 µs • Designed for moderate and high frequency applications:	Original	PDF	SGP04N60, SGB04N60, SGD04N60, SGU04N60 SGP04N60 O-220AB Q67041-A4708-A2 SGB04N60 O-263AB Q67041-A4708-A4 BUP410D SGD04N60 SGB04N60 SGP04N60 SGU04N60 SIEMENS dpak diode
Untitled Abstract: No abstract text available Text: SIEMENS BUP410D IGBT With Antiparallel Diode « Preliminary data A • Low forward voltage drop T • • High switching speed /X V % / ,.,íí Í • Low tail current • Latch-up free • Including fast free-wheel diode Pin 1 Pin 2 G Pin 3 E C Type ^CE h	OCR Scan	PDF	BUP410D O-220 67040-A4425-A2
BUP41 Abstract: BUP40 LE17 Text: SEMELAB LTD 37E 0133107 D 000D1SD SEM ELAB JUN 2 6 195/ BUP41 NEW PRODUCT S ILIC O N NPN MECHANICAL DATA EPITAXIAL PLANAR 2.8 It.I max. o 7 .8 . max. 3.2, 31 3.75 FEATURES nnn • Very low V ce sat 1.2 • High gain at high current T 2 .5 4 max. 15.3 min.	OCR Scan	PDF	D00D1SD BUP41 BUP40 O-126 LE17
BUP41 Abstract: LE17 Text: SEMELAB 3 Gol-ô<fS NEW PRODUCT BUP41 SILICON NPN EPITAXIAL PLANAR MECHANICAL DATA Dimensions in m m FEATURES • VERY LOW VcE sat 3.75 • HIGH GAIN AT HIGH CURRENT • VERY FAST SWITCHING • PNP COMPLEMENT BUP 40 c : b ¿.58 [*- LO.5 0.88, 2.29 max TO 126	OCR Scan	PDF	BUP41 55to150Â BUP41 LE17
bup410d Abstract: BUP41 Text: SIEMENS BUP 41 OD IGBT With Antiparallel Diode Preliminary data • Low forward voltage drop • High switching speed • Low tail current • Latch-up free • Including fast free-wheel diode Pin 1 Pin 2 G Type BUP410D ^CE 600V 13A C Pin 3 E Package Ordering Code	OCR Scan	PDF	BUP410D O-220 C67047-A4425-A2 BUP41
Magnatec Abstract: BUP41 fast switching pnp transistor 3A 60V "NPN Transistor" BUP40 LE17 npn transistor Text: SILICON EPITAXIAL PLANAR NPN TRANSISTOR Tfelectronics MAGNATEC ¡^ ] BUP41 • PNP C om plim ent BUP40 • High Gain at High Current • Very fast Switching ABSOLUTE M A X IM U M RATINGS T a = 2 5 °C unless otherwise stated v CBO Collector - Base Voltage	OCR Scan	PDF	BUP41 BUP40 O-126 Magnatec BUP41 fast switching pnp transistor 3A 60V "NPN Transistor" BUP40 LE17 npn transistor
VPT05155 Abstract: bup410d Text: SIEMENS SGP04N60 P relim in ary d ata IGBT • Low forward voltage drop • High switching speed VPT05155 • Low tail current 1 • Latch-up free • Avalanche rated Pin 1 Pin 2 G Type VCE SGP04N60 600V 4A Pin 3 E C Package Ordering Code TO-220 AB Q67040-A . . . .	OCR Scan	PDF	SGP04N60 SGP04N60 T05155 Q67040-A O-220 BUP410D Apr-07-1998 GPT05155 VPT05155 bup410d

SIEMENS dpak diode Abstract: No abstract text available Text: Preliminary data SIEMENS SGP04N60, SGB04N60, SGD04N60, SGU04N60 Fast S-IGBT in NPT-Technology • 75 % lower E0ff compared to previous generation combined with low conduction losses • Short circuit withstand time 10 is • Designed for moderate and high frequency applications:	OCR Scan	PDF	SGP04N60, SGB04N60, SGD04N60, SGU04N60 SGP04N60 O-220AB Q67041-A4708-A2 SGB04N60 O-263AB Q67041-A4708-A4 SIEMENS dpak diode
leistungstransistoren Abstract: bup314d buz 342 G siemens 230 95 O BUP 307D BUZ,350 BUZ,271 BUP400D bup313d BUP314 Text: SIEMENS Gehäuseübersicht Package Information N-Kanal Leistungstransistoren N Channel Power Transistors D i A PN \ ° s TO-220 AB *D S ^ D S o n V 50 50 50 50 50 50 50 50 50 50 50 50 50 50 60 60 60 60 60 100 100 100 100 100 100 100 100 Q 10 18 23 28 m	OCR Scan	PDF	O-220 BUZ12A BUZ11S2 BUZ10S2 O-218 346S2 BUP410D leistungstransistoren bup314d buz 342 G siemens 230 95 O BUP 307D BUZ,350 BUZ,271 BUP400D bup313d BUP314
Untitled Abstract: No abstract text available Text: MODEL: BU-P4160 Bulkhead Female BNC Receptacle MATERIALS: Body - Brass, Tarnish resistant plating, Center Contact - Gold plated Beryllium copper Dielectric - PTFE RATING: 50 Ohms Impedance 30 VAC/60VDC Max shield/earth 500 VRMS Inner conductor/shield Temperature: -70°C to 170°C	OCR Scan	PDF	BU-P4160 VAC/60VDC
Untitled Abstract: No abstract text available Text: SIEMENS SGP02N60 P re lim in a ry data IGBT • Latch-up free • Avalanche rated Pin 1 Pin 2 G Pin 3 E C Type VCB h Package Ordering Code SGP02N60 600V 2A TO-220 AB Q67040-A . . . . Maximum Ratings Parameter Symbol Collector-emitter voltage ''CE Collector-gate voltage	OCR Scan	PDF	SGP02N60 SGP02N60 Q67040-A O-220 Apr-07-1998 BUP410D
siemens igbt Abstract: No abstract text available Text: SIEMENS SGD04N60 P re lim in a ry data IGBT • Low forward voltage drop • High switching speed • Low tail current • Latch-up free • Avalanche rated SGD04N60 Ul Type 600V h Package Ordering Code 4A P-T0252 Q67040-A . . . . Maximum Ratings Parameter	OCR Scan	PDF	SGD04N60 SGD04N60 P-T0252 Q67040-A Apr-07-199\/ge BUP41OD Apr-07-1998 siemens igbt
Untitled Abstract: No abstract text available Text: Preliminary data SIEMENS SGP06N60, SGB06N60, SGD06N60, SGU06N60 Fast S-IGBT in NPT-Technology • 75 % lower E0ff compared to previous generation combined with low conduction losses • Short circuit withstand time 10 is • Designed for moderate and high frequency applications:	OCR Scan	PDF	SGP06N60, SGB06N60, SGD06N60, SGU06N60 SGP06N60 O-220AB Q67041-A4709-A2 SGB06N60 O-263AB Q67041-A4709-A4
Untitled Abstract: No abstract text available Text: BU-P4115 SHORTING BAR MATERIAL; Nickel Plated Brass Parts are packaged (10) per Bag Mueller Electric Company 1208 Massillon Rd. Sie. N-1500 Akron, OH 44306-4524 www.muellerelectric.com K> to ro RoHS Compliant Toll: 800.955. Phone: 330.780. Fax: 330.780.	OCR Scan	PDF	BU-P4115 N-1500
bup41 Abstract: No abstract text available Text: SIEMENS SGP06N60 P relim inary data IGBT • Low forward voltage drop • High switching speed • Low tail current • Latch-up free • Avalanche rated Type VCE b Package Ordering Code SGP06N60 600V 6A TO-220 AB Q67041-A4709-A2 Maximum Ratings Parameter	OCR Scan	PDF	SGP06N60 SGP06N60 O-220 Q67041-A4709-A2 BUP410D Apr-07-1998 bup41
BU930 Abstract: SOT93 BU409 BU500 BU606 BU930P T0220 BU4090 BU800 BU912 Text: Type No. Ó“ ' «•*» Package v CEO ■c PD hFE« V ce /'C 7 7 7 5/1 5/1 5/1 5/0.6 5/0.6 10M 10M 10M 6M 6M 60 60 60 70 70 6M 70 75 125 125 cont BU408D BU409 BU409D BU426 BU426A NPN NPN NPN NPN NPN T0220 T0220 T0220 SOT 9 3 SOT93 200 375 400 6 6 5min 5min	OCR Scan	PDF
BUP40 Abstract: BUP41 LE17 Text: SEMELAB 3?E LTD D 6133107 D0G014Ô SEMELAB JUN 2 6 1987 BUP40 EW PRODUCT 'U S I L I C O N PNP MECHANICAL DATA EPITAXIAL PLANAR 2.8 .7 .8 . m ax. 3-2l 3.0 j 3.75 -¿ J t 11.1 m ax. FEATURES • Very low V ce sat TUU T ÜÜÜ , 1.2 • High gain at high current	OCR Scan	PDF	i33ia? BUP40 BUP41 O-126 LE17

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BUP41 Datasheets (6)

BUP41 Datasheets Context Search

BUP314

SGP02N60

BUP410D

2A mosfet igbt driver stage

irfb4115

SGP02N60

Q67041-A4709

BUP410D

Untitled

BUP41

BUP41

bup410d

Magnatec

VPT05155

SIEMENS dpak diode

leistungstransistoren

Untitled

Untitled

siemens igbt

Untitled

Untitled

bup41

BU930

BUP40