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STMicroelectronics BSY95A
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BSY95A Datasheets (30)

Part	Manufacturer	Description	Datasheet Type	PDF
BSY95A	Central Semiconductor	Leaded Small Signal Transistor General Purpose - Pol=NPN / Pkg=TO18 / Vceo=15 / Ic=0.2 / Hfe=50-200 / fT(Hz)=200M / Pwr(W)=0.3	Original	PDF
BSY95(A)	Unknown	Silicon NPN Transistor	Original	PDF
BSY95A	Semelab	Bipolar NPN Device in a Hermetically Sealed TO18 Metal Package - Pol=NPN / Pkg=TO18 / Vceo=15 / Ic=0.2 / Hfe=50-200 / fT(Hz)=200M / Pwr(W)=0.3	Original	PDF
BSY95A	Continental Device India	Semiconductor Device Data Book 1996	Scan	PDF
BSY95A	Continental Device India	TO-92 NPN Plastic Package Transistors	Scan	PDF
BSY95A	Crimson Semiconductor	Transistor Selection Guide	Scan	PDF
BSY95A	Ferranti Semiconductors	Shortform Data Book 1971	Short Form	PDF
BSY95A	Ferranti Semiconductors	Quick Reference Guide 1985	Scan	PDF
BSY95A	Ferranti Semiconductors	Metal Can Transistors (Short Form)	Scan	PDF
BSY95A	ITT Industries	Misc. Data Book Scans 1975/76	Scan	PDF
BSY95A	ITT Semiconductors	Transistors 1980	Scan	PDF
BSY95A	ITT Semiconductors	Semiconductor Summary 1969	Scan	PDF
BSY95A	Micro Electronics	Semiconductor Devices	Scan	PDF
BSY95A	Mullard	Quick Reference Guide 1977/78	Scan	PDF

BSY95A	Unknown	Basic Transistor and Cross Reference Specification	Scan	PDF
BSY95A	Unknown	Basic Transistor and Cross Reference Specification	Scan	PDF
BSY95A	Unknown	Shortform Transistor PDF Datasheet	Short Form	PDF
BSY95A	Unknown	Diode, Transistor, Thyristor Datasheets and more	Scan	PDF
BSY95A	Unknown	Semiconductor Master Cross Reference Guide	Scan	PDF
BSY95A	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF

BSY95A Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: BSY95A Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO18 Metal Package. 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) Bipolar NPN Device. VCEO = 15V 0.48 (0.019) 0.41 (0.016) dia. IC = 0.2A All Semelab hermetically sealed products	Original	PDF	BSY95A O206AA) 35/10m 16-Jul-02
BSY95A Abstract: No abstract text available Text: BSY95A Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO18 Metal Package. 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) Bipolar NPN Device. VCEO = 15V 0.48 (0.019) 0.41 (0.016) dia. IC = 0.2A All Semelab hermetically sealed products	Original	PDF	BSY95A O206AA) 35/10m 2-Aug-02 BSY95A
Untitled Abstract: No abstract text available Text: BSY95A Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO18 Metal Package. 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) Bipolar NPN Device. VCEO = 15V 0.48 (0.019) 0.41 (0.016) dia. IC = 0.2A All Semelab hermetically sealed products	Original	PDF	BSY95A O206AA) 35/10m 19-Jun-02
switch NPN Abstract: BSY18 2N2369 2n4390 Text: Small Signal Transistors TO-18 Case TYPE NO. DESCRIPTION BVCBO BVCEO BVEBO ICBO @ V (V) (V) (mA) MIN MIN MIN VCB (V) MAX hFE @ IC (mA) MIN MAX @ VCE (V) VCE (SAT) @ IC Cob fT (V) (mA) (pF) (MHz) (dB) ton (ns) toff (ns) MAX MAX MAX MAX MAX MIN NF ICES ICEV	Original	PDF	2N703 2N706C 2N708 2N709A 2N717 2N718A 2N719A 2N720A 2N721 2N722A switch NPN BSY18 2N2369 2n4390
BSY95A Abstract: No abstract text available Text: b ^ E D • bbSB'IBl U Q 2 7 ^5 E a n N AMER PHILIPS/DISCRETE APX BSY95A A SILICON PLANAR EPITAXIAL TRANSISTOR NPN transistors in a TO-18 metal envelope intended for general purpose low level switching applications. QUICK REFERENCE DATA Collector-base voltage open emitter	OCR Scan	PDF	BSY95A 0027c BSY95A
BF496 Abstract: CD639 BF959 BSY95A CC337 CC337-16 CC337-25 CC338-16 CC338-25 CC338-40 Text: Electrical Characteristics Ta=25°C, Unless Otherwise Specified Maximum Ratings Type No. BF496 BF959 BSY95A CC337 V CB0 V CE0 ^EBO (V) Min (V) Min (V) Min 30 20 3 30 20 50 20 15 45 3 5 5 'cBO (W) (A) @Tc=25°< 0.3 0.02 0.5 0.625 0.1 0.625 0.2 0.625 0.8 ^CB	OCR Scan	PDF	BF496 BF959 O-92-2 BSY95A CC337 CD639 CC337-16 CC337-25 CC338-16 CC338-25 CC338-40
Untitled Abstract: No abstract text available Text: Electrical Characteristics Ta=25°C, Unless Otherwise Specified Maximum Ratings Type No. BF496 BF959 BSY95A CC337 VCBO VCEO ^EBO (W) (A) (V) (V) (V) Min Min Min @Tc=25°< 30 30 20 50 20 20 15 45 3 3 5 5 0.3 'cBO ^CB *CES ^CE e (V) m (V) W Max Max 0.02 0.5	OCR Scan	PDF	CC337 CC337-25
BSY95A Abstract: npn general purpose ic 2 bo 565 Silicon Epitaxial Planar Transistor philips bbS3T31 Text: b^E D • LbSB'iai □G27'1SS B'H IAPX N AMER PHILIPS/DISCRETE Jl BSY95A SILICON PLANAR EP ITAXIA LTR A N SISTO R NPN transistors in a T O -1 8 metal envelope intended fo r general purpose low level switching applications. Q U IC K R E F E R E N C E D A T A	OCR Scan	PDF	G27tiss BSY95A b53T31 bbS3T31 BSY95A npn general purpose ic 2 bo 565 Silicon Epitaxial Planar Transistor philips
BSY95A Abstract: No abstract text available Text: BSY95A SbE T> PHILIPS INTERNATIONAL TllOfiEb OOMHHMS 36T W P H I N T-3S-U SILICON PLANAR EPITAXIALTRANSISTOR NPN transistors in a TO-18 metal envelope intended for general purpose low level switching applications. Q U ICK R E F E R E N C E D A TA Collector-base voltage open emitter	OCR Scan	PDF	BSY95A Q0MH44E 711002b D0MBM45 T-35-11 IB6231\| BSY95A
BSY95A Abstract: BSY95 Text: BSY95A NPN Silicon Epitaxial Planar Transistor for general purpose switching applications max.0.50 Metal case JEDEC TO-18 18 A 3 according to DIN 41 876 Collector connected to case Weight approximately 0.35 g Dimensions in mm Absolute Maximum Ratings Symbol	OCR Scan	PDF	BSY95A 100mA 100mA BSY95A BSY95
Untitled Abstract: No abstract text available Text: 5LE J> m m057& 000btitiS 332 • ZETB^'2 '*7' 0 { NPN LOW LEVEL ZETEX SEMICONDUCTORS Type V CB V ceo V M ax lc V mA M a x V CE sat at V k mA Min f-jat hFE at !b Min M ax 'c m A MHz mA mA Continued P.ot at =ta Package Comple ment mW 2N3053 60 40 700 1.4	OCR Scan	PDF	000bt 2N3053 2N696 2N697 BFY51 BSY51 BSY52 BC107 BCY59 BCY56
TO-39 1000 V Abstract: No abstract text available Text: NPN LOW LEVEL TABLE 1 - NPN SILICON PLANAR LOW LEVEL TRANSISTORS The devices show n in this table are low level transistors designed for small and medium signal, low and medium power amplification from DC to radio frequencies in Commercial, Industrial and Military	OCR Scan	PDF	BC108 ZT180 ZT187 2N706A 2N706 BCY57 BSY95A TO-39 1000 V
2N2222 hfe Abstract: 2N2222 chip ztx313 BCY71 2N2218 2N2219 2N2221 2N2222 2N2904 2N2906 Text: NPN SWITCHING M ax VCE sat\| at Max Type V CEO Continued f T Min at h FE at P acksQ S 'c •c •b Min Max •c ton 'c . mA MHz mA ns mA mA 0.35 150 15 40 150 50 150 15 40 0.4 150 15 100 800 0.4 150 15 40 120 30 800 0.4 150 15 100 ZT80 25 500 0 .2 10 2 38 ZT87	OCR Scan	PDF	BFY51 2N2218 2N2904 2N2219 2N2905 2N2221 2N2906 2N2222 2N2907 ZT180 2N2222 hfe 2N2222 chip ztx313 BCY71 2N2904 2N2906
BCY56 Abstract: 2N1131 2N1132 2N3053 2N4037 2N696 2N697 BC107 BC177 BFY51 Text: < Type o< OD NPN LOW LEVEL V ceo M ax c M ax V CE sat\| at V mA V 'c mA Min fT at hFE at Pto, at = 2agC Iß M in M ax 'c m A M Hz m A mW mA 2N3053 60 40 700 1.4 150 15 50 250 150 2N696 60 40 500 1.5 150 15 20 60 120 150 150 Continued Package Com ple ment	OCR Scan	PDF	2N3053 2N4037 2N696 2N1131 2N697 2N1132 BFY51 BSY51 BSY52 BC107 BCY56 2N1131 2N1132 2N4037 BC177

typical 2n2222 npn transistors Abstract: 2N2475 2N2221 2N2222 2N2483 FF2221E FF2221J FF2222E FF2222J FF2483E Text: SEMICONDUCTOR NETWORKS STANDARD PRODUCTS - SILICON PLANAR QUAD TRANSISTORS Devices in this range consist of four electrically isolated transistors encapsulated in a single moulded or ceramic dual in-line package. Their applications range from small signal amplification through to medium	OCR Scan	PDF	FF3725J FF2221E FF2221J 2N2221 FF2222E FF2222J 2N2222 FF2483E FF2483J MoulTO-18 typical 2n2222 npn transistors 2N2475 2N2222 2N2483
BSY55 Abstract: Scans-00107837 BCY56 2N1893 2N2102 2N2405 2N4036 BFX85 ZT86 ZT88 Text: NPN LOW LEVEL TABLE 1 - NPN SILICON PLANAR LOW LEVEL TRANSISTORS The devices show n in this table are low level transistors designed for small and medium signal, low and medium pow er amplification from D C to radio frequencies in Commercial, Industrial and Military	OCR Scan	PDF	2N2219A 2N2905A 2N2222A 2N2907A ZT181 BCY58 T0-18 BCY78 BSY51 BSY55 Scans-00107837 BCY56 2N1893 2N2102 2N2405 2N4036 BFX85 ZT86 ZT88
BCY56 Abstract: 2N1131 2N1132 2N3053 2N4037 2N696 2N697 BC107 BC177 BFY51 Text: < Type o< OD NPN LOW LEVEL V ceo M ax c M a x V CE sat\| at V mA V 'c mA Min fT at hFE at Continued Pto, at = 2ag C Iß Min M ax 'c m A MHz mA mW mA Package Comple ment 2N3053 60 40 700 1.4 150 15 50 250 150 100 50 1000 TO-39 2N4037 2N696 60 40 500 1.5	OCR Scan	PDF	2N3053 2N4037 2N696 2N1131 2N697 2N1132 BFY51 BSY51 BSY52 BC107 BCY56 2N1131 2N1132 2N4037 BC177
transistor t2a Abstract: 2n2206 TRANSISTOR ztx312 transistor 2N2475 N706A BSX12 2N2206 J 2N2369 BSV24 BSV25 Text: SILICON TRANSISTORS Planar Epitaxial High Speed Switching n-p-n Characteristics M axim um Ratings Type No. v CBO VCER Vebo P to t 25°C smb. fT min. Storajje Time t s ( i nax.) at l c mA MHz nS 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 20 150 150 10 200	OCR Scan	PDF	BSY95A ZTX310, BSV23 ZTX311 BSV24 ZTX312, BSV25 ZTX313, BSV26 ZTX314, transistor t2a 2n2206 TRANSISTOR ztx312 transistor 2N2475 N706A BSX12 2N2206 J 2N2369
2N2220 Abstract: 2N2219 transistor 2N2475 2N2218 2N2219 2N2221 2N2222 2N2904 2N2905 2N2906 Text: NPN SWITCHING Type V ceo V Max Ir 't, mA Continued Max VcE sat at V hFE at Switching Times (Max) at fjM in at Package lc Ib Min. Max. !c !c mA MHz mA mA mA 25* 175* 150 TO-39 2N2904 25* 200* 150 TO-39 2N2905 20 20* 213* 150 TO-18 150 250 20 25* 175* 150 TO-18	OCR Scan	PDF	BFY51 2N2218 2N2904 2N2219 2N2905 2N2220 2N2221 2N2906 2N2222 2N2907 2N2219 transistor 2N2475 2N2904 2N2905 2N2906
2N2222 Abstract: 2N2904 2N2218 2N2219 transistor 2N2475 2N2219 2N2220 2N2221 2N2905 2N2906 Text: NPN SWITCHING Type V ceo V Max Ir 't, mA Continued Max VcE sat at hFE Switching Times (Max) at fjM in at at Package V !c mA lc Ib Min. Max. !c mA MHz mA mA — TO-39 150 250 20 25* 175* 150 TO-39 2N2904 150 250 20 25* 200* 150 TO-39 2N2905 60 150 250 20 20* 213*	OCR Scan	PDF	BFY51 2N2218 2N2904 2N2219 2N2905 2N2220 2N2221 2N2906 2N2222 2N2907 2N2904 2N2219 transistor 2N2475 2N2905 2N2906
2N1711 MOTOROLA Abstract: DH3467CD equivalent 2N2219 2N2219A BSX45 bsy38 BSY39 SP3725 SP2222AF bsx46 equivalent SP2484F Text: Transistors Cont. Discrete Devices Space Saving Devices Electrical Characteristics @ 25° C Maxim um Ratings Ambient P q Type Polarity One Both Side Sides mW mW VCE<Sat) @ Ic / lß H f e ic Vcb Volts VCE Volts VEB Volts Min/Max mA Volts m A/m A Frequency	OCR Scan	PDF	SP918AF SP918BF SP2222AF SP2223AF SP2484F SP2907AF SP2946F BSY51 2N2218 BSY52 2N1711 MOTOROLA DH3467CD equivalent 2N2219 2N2219A BSX45 bsy38 BSY39 SP3725 bsx46 equivalent
2N2477 Abstract: 2N2222 2N2219 transistor 2N2938 2N2221 2N2483 FF2221E FF2221J FF2222E FF2222J Text: SEMICONDUCTOR NETWORKS STANDARD PRODUCTS - SILICON PLANAR QUAD TRANSISTORS Devices in this range consist of four electrically isolated transistors encapsulated in a single moulded or ceramic dual in-line package. Their applications range from small signal amplification through to medium	OCR Scan	PDF	FF3725J FF2221E FF2221J 2N2221 FF2222E FF2222J 2N2222 FF2483E FF2483J 2N2907A 2N2477 2N2222 2N2219 transistor 2N2938 2N2483
bcy79 equivalent Abstract: 2N3053 equivalent 2N929 bcy78 equivalent 2N2905a equivalent f025 2N930 BAW63 BAW63A BFS36A Text: MICRO-E MICRO-E PRODUCT LIST Where approval for military use has been obtained the appropriate British Standards number is indicated under B.S. number. Diodes Transistors Type Device marking BFS36 BFS36A BFS37 L1 L2 L3 BFS37A BFS38 BFS38A BFS39 BFS40 BFS40A	OCR Scan	PDF	BFS36 2N930 BS9365 BAW63 BS9302 BFS36A 2N929 BAW63A bcy79 equivalent 2N3053 equivalent bcy78 equivalent 2N2905a equivalent f025
F B0347 Abstract: b0349 BC184LB B0679 35S20 BDX330 B0242c f b0349 B0346 BD370-6 Text: Pro Electron Series in o PRO ELECTRON SERIES Bipolar—see page 5-37 for JFET o Type No. BC107 BC107A Can Styl« TO-18 TO-18 VCES* v CBO (VI M in 50 50 v CEO (V) M in 45 45 v EB0 (V) M in 6 6 •c e s * 'CBO a InA) Max 15* 15* V CB IV) 50 50 H rh Ne 1 kH z *	OCR Scan	PDF	DD3SS11 F B0347 b0349 BC184LB B0679 35S20 BDX330 B0242c f b0349 B0346 BD370-6

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STMicroelectronics BSY95A

BSY95A Datasheets (30)

BSY95A Datasheets Context Search

Untitled

BSY95A

Untitled

switch NPN

BSY95A

BF496

Untitled

BSY95A

BSY95A

BSY95A

Untitled

TO-39 1000 V

2N2222 hfe

BCY56

typical 2n2222 npn transistors

BSY55

BCY56

transistor t2a

2N2220

2N2222

2N1711 MOTOROLA

2N2477

bcy79 equivalent

F B0347