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    BFY5 Search Results

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    BFY5 Price and Stock

    TT Electronics Power and Hybrid / Semelab Limited BFY52

    TRANSISTOR, NPN, TO-39
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Farnell BFY52 Each 6 Weeks, 1 Days 5
    • 1 -
    • 10 £1.01
    • 100 £0.39
    • 1000 £0.38
    • 10000 £0.37
    		Buy Now

    STMicroelectronics BFY51.

    TRANSISTOR, NPN TO-5
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Farnell BFY51. Each 10 Weeks, 1 Days 5
    • 1 -
    • 10 £1.36
    • 100 £0.68
    • 1000 £0.4
    • 10000 £0.39
    		Buy Now

    STMicroelectronics BFY50.

    TRANSISTOR, NPN TO-5
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Farnell BFY50. Each 10 Weeks, 1 Days 5
    • 1 -
    • 10 £1.36
    • 100 £0.68
    • 1000 £0.4
    • 10000 £0.39
    		Buy Now

    YAGEO Corporation BFY50

    1000 MA, 35 V, NPN, SI, SMALL SIGNAL TRANSISTOR, TO-39
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components BFY50 20
    • 1 $1.5
    • 10 $1.35
    • 100 $1.275
    • 1000 $1.275
    • 10000 $1.275
    		Buy Now

    Housing and Safety Executive (HSE) BFY50

    1000 MA, 35 V, NPN, SI, SMALL SIGNAL TRANSISTOR, TO-39
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components BFY50 20
    • 1 $3.75
    • 10 $2.75
    • 100 $2.75
    • 1000 $2.75
    • 10000 $2.75
    		Buy Now
    Find more BFY5 price and stock on Findchips.com

    BFY5 Datasheets (274)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    BFY50 Central Semiconductor Leaded Small Signal Transistor General Purpose - Pol=NPN / Pkg=TO39 / Vceo=35 / Ic=1 / Hfe=30min / fT(Hz)=60M / Pwr(W)=0.8 Original PDF
    BFY50 Philips Semiconductors Small-signal Transistors Original PDF
    BFY50 Philips Semiconductors NPN medium power transistors - Pol=NPN / Pkg=TO39 / Vceo=35 / Ic=1 / Hfe=30min / fT(Hz)=60M / Pwr(W)=0.8 Original PDF
    BFY50 Semelab Medium Power Amplifiers NPN Silicon Planar Transistor - Pol=NPN / Pkg=TO39 / Vceo=35 / Ic=1 / Hfe=30min / fT(Hz)=60M / Pwr(W)=0.8 Original PDF
    BFY50 STMicroelectronics MEDIUM POWER AMPLIFIER Original PDF
    BFY50 Continental Device India Semiconductor Device Data Book 1996 Scan PDF
    BFY50 Crimson Semiconductor Transistor Selection Guide Scan PDF
    BFY50 Diode Transistor SMALL SIGNAL TRANSISTORS Scan PDF
    BFY50 Fairchild Semiconductor Misc. Data Book Scans 1975/76 Scan PDF
    BFY50 Fairchild Semiconductor Full Line Condensed Catalogue 1977 Scan PDF
    BFY50 Ferranti Semiconductors Metal Can Transistors (Short Form) Scan PDF
    BFY50 Ferranti Semiconductors Shortform Data Book 1971 Short Form PDF
    BFY50 Ferranti Semiconductors Quick Reference Guide 1985 Scan PDF
    BFY50 ITT Semiconductors Semiconductor Summary 1969 Scan PDF
    BFY50 Micro Electronics Semiconductor Device Data Book Scan PDF
    BFY50 Micro Electronics Semiconductor Devices Scan PDF
    BFY50 Motorola Motorola Transistor Datasheets Scan PDF
    BFY50 Motorola The European Selection Data Book 1976 Scan PDF
    BFY50 Motorola European Master Selection Guide 1986 Scan PDF
    BFY50 Mullard Quick Reference Guide 1977/78 Scan PDF
    ...

    BFY5 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BFY56B

    Abstract: No abstract text available
    Text: BFY56B Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 55V 0.41 (0.016) 0.53 (0.021)


    Original     		PDF BFY56B O205AD) 1-Aug-02 BFY56B

    BFY51

    Abstract: transistor BFY52 BFY50 ic str 6707 BFY52 IC 7811 BFY50 equivalent BP317 ic 709 BFY51 philips
    Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D111 BFY50; BFY51; BFY52 NPN medium power transistors Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 Apr 22 Philips Semiconductors Product specification NPN medium power transistors


    Original     		PDF M3D111 BFY50; BFY51; BFY52 MAM317 SCA54 117047/00/02/pp8 BFY51 transistor BFY52 BFY50 ic str 6707 BFY52 IC 7811 BFY50 equivalent BP317 ic 709 BFY51 philips

    BFY50L

    Abstract: No abstract text available
    Text: BFY50L Dimensions in mm inches . 8.51 (0.34) 9.40 (0.37) Bipolar NPN Device in a Hermetically sealed TO5 Metal Package. 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) 38.00 (1.5) min. Bipolar NPN Device. 0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021) dia.


    Original     		PDF BFY50L O205AA) 20-Aug-02 BFY50L

    BFY52

    Abstract: BFY51 BFY50 BFY50-BFY51 BFY50I
    Text: BFY50-BFY51 BFY52 MEDIUM-POWER AMPLIFIERS DESCRIPTION The BFY50, BFY51 and BFY52 are silicon planar epitaxial NPN transistors in Jedec TO-39 metal case. They are intended for general purpose linear and switching applications. TO-39 INTERNAL SCHEMATIC DIAGRAM


    Original     		PDF BFY50-BFY51 BFY52 BFY50, BFY51 BFY52 BFY50 BFY51 BFY50 BFY50-BFY51 BFY50I

    Untitled

    Abstract: No abstract text available
    Text: BFY52 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 20V 0.41 (0.016) 0.53 (0.021)


    Original     		PDF BFY52 O205AD) 17-Jul-02

    transistor BFY52

    Abstract: transistor 5w
    Text: SILICON NPN TRANSISTOR BFY52 • V BR CEO = 20V (Min). • Hermetic TO-39 Metal Package. • Ideally Suited General Purpose Amplifier Applications • Screening Options Available • ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated) VCBO VCEO VEBO


    Original     		PDF BFY52 O-205AD) transistor BFY52 transistor 5w

    Untitled

    Abstract: No abstract text available
    Text: BFY52 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 20V 0.41 (0.016) 0.53 (0.021)


    Original     		PDF BFY52 O205AD) 19-Jun-02

    BFY50

    Abstract: No abstract text available
    Text: BFY50 MEDIUM POWER AMPLIFIERS NPN SILICON PLANAR TRANSISTOR MECHANICAL DATA Dimensions in mm inches 8.89 (0.35) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) Description 4.19 (0.165) 4.95 (0.195) 12.70 (0.500) min. The BFY50 is a Silicon Planar Epitaxial NPN Transistor in Jedec TO39 metal case. they


    Original     		PDF BFY50 BFY50 Ts180 150mA 300ms,

    Untitled

    Abstract: No abstract text available
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SILICON PLANAR TRANSISTORS BFY50, BFY51, BFY52 TO-39 Metal Can Package General Purpose Transistors. ABSOLUTE MAXIMUM RATINGS Ta=25ºC unless specified otherwise DESCRIPTION


    Original     		PDF BFY50, BFY51, BFY52 BFY50 BFY51 C-120 52Rev210701

    Untitled

    Abstract: No abstract text available
    Text: BFY56B Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 55V 0.41 (0.016) 0.53 (0.021)


    Original     		PDF BFY56B O205AD) 19-Jun-02

    BFY51

    Abstract: No abstract text available
    Text: SILICON NPN TRANSISTOR BFY51 • V BR CEO = 30V (Min). • Hermetic TO-39 Metal Package. • Ideally Suited General Purpose Amplifier Applications • Screening Options Available • ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated) VCBO VCEO VEBO


    Original     		PDF BFY51 O-205AD) BFY51

    Untitled

    Abstract: No abstract text available
    Text: BFY51 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 30V 0.41 (0.016) 0.53 (0.021)


    Original     		PDF BFY51 O205AD) 19-Jun-02

    BFY50

    Abstract: No abstract text available
    Text: BFY50 MECHANICAL DATA Dimensions in mm inches MEDIUM POWER AMPLIFIERS NPN SILICON PLANAR TRANSISTOR 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) 12.70 (0.500) min. Description The BFY50 is a Silicon Planar Epitaxial NPN Transistor in Jedec TO39 metal case. they


    Original     		PDF BFY50 BFY50 O-205AD) BFY50" BFY50L 60MHz

    Untitled

    Abstract: No abstract text available
    Text: BFY51 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 30V 0.41 (0.016) 0.53 (0.021)


    Original     		PDF BFY51 O205AD) 17-Jul-02

    BFY55

    Abstract: discrete 4-20ma Silicon Epitaxial Planar Transistor philips
    Text: I I N AUER P H I L I P S / D I S C R E T E bTE b b S B ^ a i j D QDETflDT 737 I IAPX BFY55 SILICON PLANAR EPITAXIAL TRANSISTOR N-P-N tran sisto r in T O -39 m etal case w ith th e c o lle c to r connected to th e case. I t is p rim a rily intended fo r use in high freq u e n cy and ve ry high fre q u e n cy oscillators and a m p lifiers as w e ll as f o r o u tp u t stages


    OCR Scan     		PDF BFY55 53cl31 002762Q BFY55 discrete 4-20ma Silicon Epitaxial Planar Transistor philips

    BC337B

    Abstract: m 60 n 03 g10 BC327C
    Text: SEM ICO N D U CTOR DICE NPN MEDIUM POWER Volts Volts ZTX653 ZTX453 ZT91 2N1893 ZTX652 ZTX452 MPSA06 ZTX651 ZTX451 BFY50 2N1613 2N1711 ZT90 MPSA05 ZTX650 ZTX450 BFY51 BC337A BC337B BC337C ZTX449 BFY52 ZTX649 + V CES V CE sat ^CBO at at lc Volts Min. Max. mA Volts Volts mA


    OCR Scan     		PDF ZTX653 ZTX453 2N1893 ZTX652 ZTX452 MPSA06 ZTX651 ZTX451 BFY50 2N1613 BC337B m 60 n 03 g10 BC327C

    BFY52

    Abstract: bfy50 BFY51 BFY50-BFY51 BFY51 philips
    Text: Philips Semiconductors Product specification NPN medium power transistors BFY50; BFY51 ; BFY52 FEATURES PINNING • High current max. 1 A PIN • Low voltage (max. 35 V). DESCRIPTION 1 APPLICATIONS emitter 2 base 3 collector, connected to case • General purpose industrial applications.


    OCR Scan     		PDF BFY50; BFY51 BFY52 BFY50 BFY51 BFY52 BFY50-BFY51 BFY51 philips

    BFY50-BFY51

    Abstract: No abstract text available
    Text: /IT ^7# S C S -IH O M S O N RjincœiiLiCTœffiines BFY50-BFY51 BFY52 M EDIUM -PO W ER AMPLIFIERS DESCRIPTION The BFY50, BFY51 and BFY52 are silicon planar epitaxial NPN transistors in Jedec TO-39 metal case. They are intended for general purpose linear and switching applications.


    OCR Scan     		PDF BFY50-BFY51 BFY52 BFY50, BFY51 BFY52 BFY50

    bfy50

    Abstract: FY51
    Text: M O TO R OL A SC X S T R S /R F 12E D I b3b72S4 aGöbMäS B | BFYSO thru BFY52 M A X IM U M RATINGS R atin g S ym b o l BFY BFY BFY . 50 81 52 U n it C ollector-E m itter Voltage VcEO 35 30 20 Vdc C ollector-Base Voltage VCBO 80 60 40 Vdc E m itter-Base Voltage


    OCR Scan     		PDF b3b72S4 BFY52 b3b75S4 BFY50 37-rt FY51-52 FY51

    BFY55

    Abstract: transistor f 421 1F t transistor Silicon Epitaxial Planar Transistor philips
    Text: BFY55 PHILIPS INTERNATIONAL SbE D Bi 711üflSb 00422^2 043 I IPHIN T -3 h 2 3 SILICON PLANAR EPITAXIAL TRANSISTOR N-P-N transistor in TO-39 metal case with the collector connected to the case. It is primarily intended for use in high frequency and very high frequency oscillators and amplifiers as well as for output stages


    OCR Scan     		PDF BFY55 7110fl5b T-3J-23 T-31-23 711DaSb 0DM53GB BFY55 transistor f 421 1F t transistor Silicon Epitaxial Planar Transistor philips

    Untitled

    Abstract: No abstract text available
    Text: 30E d • Goaiaas ? ■ SCS-THOMSON HkHOT «! ^ 1 A -Z 3 > BFY50-B FY51 BFY52 S G S-THOMSON MEDIUM-POWER AMPLIFIERS DESCRIPTION The BFY50, BFY51 and BFY52 are silicon planar epitaxial NPN transistors in Jedec TO-39 metal case. They are intended for general purpose linear


    OCR Scan     		PDF BFY50-B BFY52 BFY50, BFY51 BFY52 BFY50 BFY51

    BF177

    Abstract: BC312 BF178 BF179 2N4260 BC142 2N3576 BFT39 2N3829 BF338
    Text: 7 Metal Can High Current NPN Amplifiers Case Outlines Maximum ratinas Device Type BFT39 BFT40 BFT41 BFY50 BFY51 BFY52 ¡5 o £L NPN NPN NPN NPN NPN NPN BV BV BV Case CBO CEO EBO ICM mA V V V T039 T039 T039 T039 T039 T039 90 70 60 80 60 40 80 60 50 35 30 20


    OCR Scan     		PDF BFT39 BFT40 BFT41 BFT29 BFT30 BFT31 BFY50 BFY51 BFY52 BFT53 BF177 BC312 BF178 BF179 2N4260 BC142 2N3576 2N3829 BF338

    2N4260

    Abstract: 2N3829 BFT29 BFT30 BFT31 BFT39 BFT40 BFT41 BFT53 BFY50
    Text: 7 Metal Can High Current NPN Amplifiers Case Outlines Maximum ratinas Device Type BFT39 BFT40 BFT41 BFY50 BFY51 BFY52 ¡5 o £L NPN NPN NPN NPN NPN NPN BV BV BV Case CBO CEO EBO ICM mA V V V T039 T039 T039 T039 T039 T039 90 70 60 80 60 40 80 60 50 35 30 20


    OCR Scan     		PDF BFT39 BFT40 BFT41 BFT29 BFT30 BFT31 BFY50 BFY51 BFY52 BFT53 2N4260 2N3829

    Transistor BC177

    Abstract: 2N3053 ZT87 2N1131 2N1132 2N4037 2N696 2N697 BC107 BC177
    Text: NPN LOW LEVEL < Type o< CD Max 2N3053 60 Max VcE sat at V ce O U 'C: V mA V mA mA 40 700 1.4 150 15 2N696 60 40 2N697 60 40 BFY51 60 30 !c 500 1.5 150 500 1.5 150 1000 0.35 150 Ib h FE Min. Max. 50 250 20 60 15 40 120 15 40 15 Continued Min f T at at Pto,


    OCR Scan     		PDF 2N3053 2N4037 2N696 2N1131 2N697 2N1132 BFY51 BC107 BC177 BCY59 Transistor BC177 ZT87 2N1131 2N1132 2N4037 BC177