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    BDT62 Price and Stock

    TT Electronics Power and Hybrid / Semelab Limited BDT62C

    DARLINGTON TRANSISTOR, TO-220
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Farnell BDT62C Each 9 Weeks, 1 Days 1
    • 1 £6.32
    • 10 £3.53
    • 100 £2.94
    • 1000 £2.59
    • 10000 £2.59
    		Buy Now

    TT Electronics Power and Hybrid / Semelab Limited BDT62A

    DARLINGTON TRANSISTOR, TO-220
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Farnell BDT62A Each 10 Weeks, 1 Days 1
    • 1 £0.87
    • 10 £0.87
    • 100 £0.42
    • 1000 £0.4
    • 10000 £0.4
    		Buy Now

    TT Electronics Power and Hybrid / Semelab Limited BDT62A.

    TRANSISTOR, DARLINGTON TO-220
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Farnell BDT62A. Each 13 Weeks, 1 Days 1
    • 1 £0.23
    • 10 £0.23
    • 100 £0.23
    • 1000 £0.23
    • 10000 £0.23
    		Buy Now

    BDT62 Datasheets (55)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    BDT62 Philips Semiconductors Silicon Darlington Power Transistor Original PDF
    BDT62 Magnatec Silicon Darlington Power Transistors Scan PDF
    BDT62 Motorola Motorola Semiconductor Data & Cross Reference Book Scan PDF
    BDT62 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    BDT62 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    BDT62 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    BDT62 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    BDT62 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    BDT62 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    BDT62 Philips Semiconductors SILICON DARLINGTON POWER TRANSISTORS Scan PDF
    BDT62A Philips Semiconductors Silicon Darlington Power Transistor Original PDF
    BDT62A Magnatec Silicon Darlington Power Transistors Scan PDF
    BDT62A Motorola Motorola Semiconductor Data & Cross Reference Book Scan PDF
    BDT62A Unknown Semiconductor Master Cross Reference Guide Scan PDF
    BDT62A Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    BDT62A Unknown Shortform Transistor Datasheet Guide Short Form PDF
    BDT62A Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    BDT62A Unknown Basic Transistor and Cross Reference Specification Scan PDF
    BDT62A Unknown Shortform Transistor PDF Datasheet Short Form PDF
    BDT62A Philips Semiconductors SILICON DARLINGTON POWER TRANSISTORS Scan PDF

    BDT62 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BDT62C

    Abstract: No abstract text available
    Text: <Se.mi- 2ondiicto^ 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973 376-2922 (212)227-6005 FAX: (973) 376-8960 Silicon PNP Darlington Power Transistors BDT62/A/B/C DESCRIPTION • DC Current Gain -hFe = 1000(Min)@ lc= -3A • Collector-Emitter Sustaining Voltage: VCEO(SUS) = -60V(Min)- BDT62; -SOV(Min)- BDT62A; •


    Original     		PDF BDT62/A/B/C BDT62; BDT62A; BDT62B; -120V BDT62C BDT63/A/B/C BDT62 BDT62A BDT62B BDT62C

    k2645

    Abstract: k4005 U664B mosfet k4005 MB8719 transistor mosfet k4004 SN16880N stk5392 STR451 BC417
    Text: 1 BHIAB Electronics Du som söker besvärliga IC & transistorer, börja Ditt sökande hos oss – vi har fler typer på lager än man rimlingen kan begära av ett företag Denna utgåva visar lagerartiklar men tyvärr saknas priser och viss information Men uppdatering sker kontinuerligt


    Original     		PDF MK135 MK136 MK137 MK138 MK139 MK140 Mk142 MK145 MK155 157kr k2645 k4005 U664B mosfet k4005 MB8719 transistor mosfet k4004 SN16880N stk5392 STR451 BC417

    BUV48I

    Abstract: BU808DXI BD699 buv18a BD241CFI transistor 2SA1046 BUW52I BU808DFI equivalent BU724AS 2SA1046
    Text: BIPOLAR TRANSISTOR INTRODUCTION TO BIPOLAR CROSS REFERENCE In order to improve our overall service, SGS-THOMSON has introduced a system of preferred transistor sales types. The following cross-reference is intended as a guide to identify sales types that may be suitable


    Original     		PDF 2N3016 2N3021 2N3022 2N3023 2N3024 2N3025 2N3026 2N3055 2N3076 2N3171 BUV48I BU808DXI BD699 buv18a BD241CFI transistor 2SA1046 BUW52I BU808DFI equivalent BU724AS 2SA1046

    2N5657 equivalent

    Abstract: 2SA1046 BU326 BU108 BU100 2SC2331 Y tip47 419 2N3792 application notes
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N5655 2N5656 2N5657 Plastic NPN Silicon High-Voltage Power Transistor . . . designed for use in line–operated equipment such as audio output amplifiers; low–current, high–voltage converters; and AC line relays.


    Original     		PDF 2N5655 2N5656 2N5657 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B 2N5657 equivalent 2SA1046 BU326 BU108 BU100 2SC2331 Y tip47 419 2N3792 application notes

    MJE494

    Abstract: 2SC1419 BD 804 2SD675 MJE104 BD581 BD135 CURVES MJ1000 DTS-4041 2N5037
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD157 BD158 BD159 Plastic Medium Power NPN Silicon Transistor . . . designed for power output stages for television, radio, phonograph and other consumer product applications. 0.5 AMPERE POWER TRANSISTORS NPN SILICON 250 – 300 – 350 VOLTS


    Original     		PDF BD157 BD158 BD159 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B MJE494 2SC1419 BD 804 2SD675 MJE104 BD581 BD135 CURVES MJ1000 DTS-4041 2N5037

    2SD669 equivalent

    Abstract: BD801 BDY29 equivalent BU108 2SC2080 2SD436 2N6021 BD345 tip122 D-PAK package 2SD544
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N6609 See 2N3773 Darlington Silicon Power Transistors 2N6667 2N6668 . . . designed for general–purpose amplifier and low speed switching applications. • High DC Current Gain — hFE = 3500 (Typ) @ IC = 4 Adc • Collector–Emitter Sustaining Voltage — @ 200 mAdc


    Original     		PDF 2N6609 2N3773) 2N6667 2N6668 220AB 2N6387, 2N6388 2SD669 equivalent BD801 BDY29 equivalent BU108 2SC2080 2SD436 2N6021 BD345 tip122 D-PAK package 2SD544

    2SC495

    Abstract: NSP41A BU108 transistor BD614 MOTOROLA 2SA663 BD4122 BD661 MJ1000 NSP2100 D45VH4 similar
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJF6107 Power Transistor For Isolated Package Applications PNP SILICON POWER TRANSISTOR 7 AMPERES 70 VOLTS 34 WATTS Designed for general–purpose amplifier and switching applications, where the mounting surface of the device is required to be electrically isolated from the heatsink


    Original     		PDF MJF6107 2N6107 E69369, TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B 2SC495 NSP41A BU108 transistor BD614 MOTOROLA 2SA663 BD4122 BD661 MJ1000 NSP2100 D45VH4 similar

    "Tektronix 475"

    Abstract: equivalent 2n6488 TIP42C EQUIVALENT BU108 motorola darlington power transistor motorola 266 TO-204AA transistor D45H11 equivalent replacement pnp bux TRANSISTOR REPLACEMENT table for transistor tip3055 equivalent
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUX48 BUX48A SWITCHMODE II Series NPN Silicon Power Transistors 15 AMPERES NPN SILICON POWER TRANSISTORS 400 AND 450 VOLTS V BR CEO 850 – 1000 VOLTS V(BR)CEX 175 WATTS The BUX 48/BUX 48A transistors are designed for high–voltage, high–speed,


    Original     		PDF 48/BUX BUX48 BUX48A AMPERE32 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A "Tektronix 475" equivalent 2n6488 TIP42C EQUIVALENT BU108 motorola darlington power transistor motorola 266 TO-204AA transistor D45H11 equivalent replacement pnp bux TRANSISTOR REPLACEMENT table for transistor tip3055 equivalent

    D42C5

    Abstract: transistor bc 647 2N5302 EB pin out TRANSISTOR tip2955 bs170 replacement 2sc141 BU108 bc 658 Motorola transistors MJE3055 TO 127 MC7812 TO-220
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  Data Sheet SCANSWITCH Designer's MJE16204 NPN Bipolar Power Deflection Transistor For High and Very High Resolution Monitors The MJE16204 is a state–of–the–art SWITCHMODE bipolar power transistor. It is


    Original     		PDF MJE16204 MJE16204 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C D42C5 transistor bc 647 2N5302 EB pin out TRANSISTOR tip2955 bs170 replacement 2sc141 BU108 bc 658 Motorola transistors MJE3055 TO 127 MC7812 TO-220

    mje521 equivalent

    Abstract: BU108 2N3055 plastic 2N6488 MOTOROLA Motorola transistors MJE3055 TO 127 3904 Transistor BDX54 tip122 tip127 audio amp BU326 BU100
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE521 Plastic Medium-Power NPN Silicon Transistor 4 AMPERE POWER TRANSISTOR NPN SILICON 40 VOLTS 40 WATTS . . . designed for use in general–purpose amplifier and switching circuits. Recommended for use in 5 to 10 Watt audio amplifiers utilizing complementary symmetry


    Original     		PDF MJE521 MJE371 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C mje521 equivalent BU108 2N3055 plastic 2N6488 MOTOROLA Motorola transistors MJE3055 TO 127 3904 Transistor BDX54 tip122 tip127 audio amp BU326 BU100

    BDT63BF

    Abstract: BDT62AF 3SM diode 62AF BDT62BF BDT62CF BDT62F BDT63AF BDT63CF BDT63F
    Text: BDT62F; BDT62AF ^BDT62BF; BDT62CF PHILIPS I N T E R NA TI O NA L SbE D 711DöBb 0 0 4 3 2 4 fl SILICON DARLINGTON POWER TRANSISTORS 23 B T P lTlÑ ” T-33-3/ PNP silicon darlington power transistors in a SOT186 envelope w ith an electrically insulated mounting


    OCR Scan     		PDF BDT62F; BDT62AF BDT62BF; BDT62CF 711052k 354fi T-33-3/ OT186 BDT63F, BDT63AF, BDT63BF BDT62AF 3SM diode 62AF BDT62BF BDT62CF BDT62F BDT63AF BDT63CF BDT63F

    diode t62

    Abstract: No abstract text available
    Text: BDT62;-62A BDT62B; 62C J PHILIPS INTERNATIONAL SbE ]> • 7110fl2b 0043S3Ö TÔ4 M P H I N T - 3 3 - 3 / SILICON DARLINGTON POWER TRANSISTORS P-N-P epitaxial base transistors in m onolithic Darlington circuit for audio output stages and general am plifier and switching applications. T 0 -2 2 0 plastic envelope. N-P-N complements are B D T63,


    OCR Scan     		PDF BDT62 BDT62B; 7110fl2b 0043S3Ö BDT63C BDT62; 7110flat diode t62

    BDT63

    Abstract: BDT62
    Text: BDT63; 63A BDT63B; 63C _A SILICON DARLINGTON POWER TRANSISTORS N-P-N epitaxial base transistors in monolithic Darlington circuit for audio output stages and general amplifier and switching applications; TO-220 plastic envelope. P-N-P complements are BDT62,


    OCR Scan     		PDF BDT63; BDT63B; O-220 BDT62, BDT62A; BDT62B BDT62C. BDT63 bS3T31 BDT63 BDT62

    transistor AL P09

    Abstract: BDT63 bdt638 BDT53 PCTI TRANSISTOR LC80 P0910 bot62 BDT63B BDT62A
    Text: 2S-MAY-2000 15= 1? FROM mGNPTEC 01132794449 TO BDT63; 63A BDT63B; 63C SILICON DARLINGTON POWER TRANSISTORS N-P-N epitaxial basetranjistor* in monolithic Darlington circuit for Audiooutput stagesandgeneral amplifier end»witchingapplications; T0-220 plasticenvelope. p-N-Pcomplements are BDT62,


    OCR Scan     		PDF 2S-MAY-2000 BDT63; BDT63B; T0-220 8DT62, BDT62A; BOT62B 8DT62C. BDT53 TZ621M transistor AL P09 BDT63 bdt638 PCTI TRANSISTOR LC80 P0910 bot62 BDT63B BDT62A

    Untitled

    Abstract: No abstract text available
    Text: BDT62F; BDT62AF BDT62BF; BDT62CF SILICON DARLINGTON POWER TRANSISTORS PNP silicon darlington power transistors in a SOT 186 envelope with an electrically insulated mounting base. The devices are designed fo r audio output stages and general amplifier and switching applications.


    OCR Scan     		PDF BDT62F; BDT62AF BDT62BF; BDT62CF BDT63F, BDT63AF, BDT63BF BDT63CF. 003M70S

    BDT*63CF

    Abstract: 721H t63f
    Text: BDT62F; BDT62AF _ ^B D T 6 2 B F ; BDT62CF PHILIPS INTERN AT IO NA L SbE D 711DöEb 0043B4Ö SILICON DARLINGTON POWER TRANSISTORS p'h x n " T -3 3 -3 / PNP silicon darlington power transistors in a SOT 186 envelope with an electrically insulated mounting


    OCR Scan     		PDF BDT62F; BDT62AF BDT62CF 0043B4Ö BDT63BF BDT63CF. BDT62F OT186. BDT62AF BDT*63CF 721H t63f

    SB 62A diode

    Abstract: BDT62 BDT63 bdt63a nas 560 BDT62B BDT63B BDT63C BDT63C PHILIPS
    Text: BDT62; 62A _ PHILIPS J DB T62B ShE D INTERNATIONAL • 00i+323fl T ä 4 « P H I N 7110a2b T - 3 ? - 3 t SILICON DARLINGTON PO W ER TRANSISTO RS P-N-P epitaxial base transistors In monolithic Darlington circuit for audio output stages and general


    OCR Scan     		PDF BDT62; BDT62B; T0-220 BDT63, BDT63A, BDT63B BDT63C. BDT62 C11Dflat SB 62A diode BDT63 bdt63a nas 560 BDT62B BDT63C BDT63C PHILIPS

    BDT62B

    Abstract: SB 62A diode BDT62 BDT62 B BDT62A bdt63a BDT63 BDT63B BDT63C TRANSISTORE
    Text: J BDT62; -62A BDT62B; 62C ^ SILICON DARLINGTON POWER TRANSISTORS P-N-P epitaxial base transistors in monolithic Darlington circuit for audio output stages and general amplifier and switching applications. T 0 -2 2 0 plastic envelope. N-P-N complements are BDT63,


    OCR Scan     		PDF BDT62; BDT62B; T0-220 BDT63, BDT63A, BDT63B BDT63C. BDT62 BDT62B SB 62A diode BDT62 B BDT62A bdt63a BDT63 BDT63C TRANSISTORE

    BDT63C

    Abstract: BDT62 BDT63 BDT63A BDT63B BS5750 LE17 2X PNP TRANSistors
    Text: > M agnates \ MAGNA Magna Park, Coventry Road, Lutterworth Leicestershire, LE17 4JB, England Sales telephone: 0455 554711 BS5750 Admin telephone: 0455 552505 Stockist Level A Qualification Pending Telex: 341927 SMLLUT G Fax: 0455 552612 SILICON DARLINGTON POWER TRANSISTORS BDT62; 62A


    OCR Scan     		PDF BS5750 bdt62; bdt62b; T0-220 BDT63, BDT63A, BDT63B BDT63C. BDT62 -VC30 BDT63C BDT63 BDT63A BS5750 LE17 2X PNP TRANSistors

    bot62

    Abstract: BDT628 BDT62B BDT62A BDT63C BDT62 BDT63 BDT63B J120 SB 62A diode
    Text: — - jr — r 2 3 0 -SSI tz>5S5 ] ;r.-3 L ' BDT62; 62A BDT62B; 62C SILICON DARLINGTON POWER TRANSISTORS P-N-P epitaxial base transistors in monolithic Darlington circuit for audio output stages and general amplifier and switching applications. T0-220 plastic envelope. N-P-N complements are BDT63,


    OCR Scan     		PDF BDT62; BDT62B; O-220 BDT63, BDT63A, BDT63B BDT63C. BDT62 bot62 BDT628 BDT62B BDT62A BDT63C BDT63 J120 SB 62A diode

    BDT62B

    Abstract: No abstract text available
    Text: BDT62; 62A BDT62B; 62C _ J K . SILICON DARLINGTON POWER TRANSISTORS P-N-P epitaxial base transistors in m onolithic Darlington circu it for audio output stages and general am plifier and switching applications. TO-220 plastic envelope. N-P-N complements are BDT63,


    OCR Scan     		PDF BDT62; BDT62B; O-220 BDT63, bbS3T31 BDT62B

    BDT62AF

    Abstract: bot62 BDT62BF BDT62CF BDT62F BDT63AF BDT63BF BDT63CF BDT63F
    Text: BDT62F; BDT62AF J BDT62BF; BDT62CF SILICON DARLINGTON POWER TRANSISTORS PNP silicon darlington power transistors in a SO T 1 8 6 envelope with an electrically insulated mounting base. The devices are designed for audio output stages and general amplifier and switching applications.


    OCR Scan     		PDF BDT62F; BDT62AF BDT62BF; BDT62CF OT186 BDT63F, BDT63AF, BDT63BF BDT63CF. BDT62F BDT62AF bot62 BDT62BF BDT62CF BDT63AF BDT63CF BDT63F

    transistor 1BT

    Abstract: BDT62C PHILIPS npn 1bt BDT63B
    Text: BDT63; 63A BDT63B; 63C _ PHILIPS "INTERNATIONAL" StEB A • v _ 7110flEb 0043551, TTT - PHIN T - J J - Z 7 SILICON DARLINGTON POWER TRANSISTORS N-P-N epitaxial base transistors in monolithic Darlington circuit for audio output stages and general


    OCR Scan     		PDF BDT63; BDT63B; 7110flEb T0-220 BDT62, BDT62A; BDT62B BDT62C. BDT63 T-33-29 transistor 1BT BDT62C PHILIPS npn 1bt BDT63B

    T0220

    Abstract: BDT62C 2SB1647 BC516 BCV26 BD678 BD680 BDX47 BSP61 T0-220
    Text: MHTEPTEKC ww w.i-t.su ¡nfo@ i-t.su electronics Ten: 495 739-09-95, 644-41-29 C O C TaB H bie TpaH 3M C TO pbl PNP copTMpoBKa no TOKy KonneKTopa Kofl: BC516 BCV26 MPSA64 BDX47 BSP61 TIP117 BD678 BD680 BD680A BD682 MJF127 TIP125 TIP127 2SB1624 2SB1020 2SB1254


    OCR Scan     		PDF BC516 BCV26 MPSA64 BDX47 T0126 BSP61 OT223 TIP117 T0220 BD678 T0220 BDT62C 2SB1647 BD680 T0-220