BDT30BF Search Results

BDT30BF Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
BDT30BF		Philips Semiconductors	Silicon Epitaxial Power Transistors		Original	PDF
BDT30BF		Unknown	Shortform Data and Cross References (Misc Datasheets)		Short Form	PDF

BDT30BF Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
df transistor Abstract: BDT30AF BDT30BF BDT30CF BDT30DF BDT30F Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistors BDT30F/AF/BF/CF/DF DESCRIPTION •DC Current Gain -hFE = 40 Min @ IC= -0.4A ·Collector-Emitter Sustaining Voltage: VCEO(SUS) = -40V(Min)- BDT30F; -60V(Min)- BDT30AF -80V(Min)- BDT30BF; -100V(Min)- BDT30CF	Original	PDF	BDT30F/AF/BF/CF/DF BDT30F; BDT30AF BDT30BF; -100V BDT30CF -120V BDT30DF BDT29F/AF/BF/CF/DF BDT30F df transistor BDT30AF BDT30BF BDT30CF BDT30DF BDT30F
BDT29BF Abstract: T-33-07 29af BDT29AF BDT29CF BDT29F BDT30AF BDT30BF BDT30CF BDT30DF Text: B i N AMER bbS3T31 O C I l ' ï b S 'i BDT29F BDT29AF; 29BF BDT29CF; 29DF T P H IL IP S /D IS C R E T E aSE D T-33-07 SILICON EPITAXIAL POWER TRANSISTORS N-P-N silicon power transistors in a SOT-186 envelope with an electrically insulated mounting base, intended for use in audio output stages, general purpose amplifier and high-speed switching applications.	OCR Scan	PDF	bbS3T31 BDT29F BDT29AF; BDT29CF; T-33-07 OT-186 BDT30F, BDT30AF, BDT30BF, BDT30CF BDT29BF T-33-07 29af BDT29AF BDT29CF BDT30AF BDT30BF BDT30DF
Untitled Abstract: No abstract text available Text: bbS3T31 O t m b S T =\ N AUER PHILIPS/DISCRETE 2SE D J V BDT29F BDT29AF; 29BF BDT29CF; 29DF SILICON EPITAXIAL POWER TRANSISTORS T " 33 " N-P-N silicon power transistors in a SOT-186 envelope with an electrically insulated mounting base, intended for use in audio output stages, general purpose amplifier and high-speed switching applications.	OCR Scan	PDF	bbS3T31 BDT29F BDT29AF; BDT29CF; OT-186 BDT30F, BDT30AF, BDT30BF, BDT30CF BDT30DF.
transistor f6 13003 Abstract: equivalent transistor bj 131-6 transistor Eb 13003 BM BB112 smd TRANSISTOR code marking 2F 6n a1211 lg CQY58 BU705 TRANSISTOR 131-6 BJ 026 philips om350 Text: W IDEBAND TRANSISTORS AND W IDEBAND HYBR ID 1C MODULES page P refa ce. 3 Selection guide Wideband transistors.	OCR Scan	PDF	SC08b transistor f6 13003 equivalent transistor bj 131-6 transistor Eb 13003 BM BB112 smd TRANSISTOR code marking 2F 6n a1211 lg CQY58 BU705 TRANSISTOR 131-6 BJ 026 philips om350
BGY41 Abstract: BFW10 FET transistor CQY58 germanium RX101 equivalent components FET BFW10 bd643 bf199 283 to92 600a transistor zener phc Text: SMALL-SIGNAL FIELD-EFFECT TRANSISTORS page Selection guide N-channel junction field-effect transistors general purpose. for differential am plifiers.	OCR Scan	PDF	LCD01 BGY41 BFW10 FET transistor CQY58 germanium RX101 equivalent components FET BFW10 bd643 bf199 283 to92 600a transistor zener phc
FET BFW10 Abstract: KP101A FET BFW11 BDX38 KPZ20G CQY58A BFW10 FET RPW100 B0943 OF FET BFW11 Text: INDEX _ INDEX OF TYPE NUM BERS The inclusion of a type number in this publication does not necessarily imply its availability. Type no. book section Type no. book section Type no. book section BA220 BA221 BA223 BA281 BA314 SCOI SCOI SCOI SCOI	OCR Scan	PDF	BA220 BA221 BA223 BA281 BA314 BA315 BA316 BA317 BA318 BA423 FET BFW10 KP101A FET BFW11 BDX38 KPZ20G CQY58A BFW10 FET RPW100 B0943 OF FET BFW11