motorola 1N4148
Abstract: DSP56301 JP13 MCM54800AJ70 HC94U-27 qs3245sog DSP5603 seiko hc 1000 GRM42-6COG* murata GRM42-6CO
Text: DSP56301ADM User’s Manual Motorola, Incorporated Semiconductor Products Sector Wireless Division 6501 William Cannon Drive West Austin, TX 78735-8598 Order this document by: DSP56301ADMUM/AD Introduction This document supports the DSP56301 Application Development Module
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DSP56301ADM
DSP56301ADMUM/AD
DSP56301
DSP56301ADM)
Augat/RD1-MC6-P102-02
30-pin
TSM11501SDV
14-pin
TSM10701SDV
20-pin
motorola 1N4148
JP13
MCM54800AJ70
HC94U-27
qs3245sog
DSP5603
seiko hc 1000
GRM42-6COG* murata
GRM42-6CO
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74HCT244 SMD
Abstract: NSH-02SB-S2-TG30 bergstik MCM54800AJ70 4609X-101-103 Augat A08 smd transistor 41B toshiba c650 DSP56301 JP13
Text: Freescale Semiconductor, Inc. Freescale Semiconductor, Inc. DSP56301ADM User’s Manual Motorola, Incorporated Semiconductor Products Sector Wireless Division 6501 William Cannon Drive West Austin, TX 78735-8598 For More Information On This Product, Go to: www.freescale.com
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DSP56301ADM
DSP56301ADMUM/AD
DSP56301
DSP56301ADM)
TSM11001SDV
TSM10301SDV
E101MD1ABE
90HBW04S
E121SD1AGE
DSP56301ADMUM/AD,
74HCT244 SMD
NSH-02SB-S2-TG30
bergstik
MCM54800AJ70
4609X-101-103
Augat A08
smd transistor 41B
toshiba c650
JP13
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hp778d
Abstract: pm5171 RESISTOR CR25 RESISTOR CR25 philips MGP990 2222-809-05002 2222-121 philips capacitor cross reference PR52 BZY 56
Text: APPLICATION NOTE A wide-band class-A linear power amplifier 174 − 230 MHz with two transistors BLV33 ECO7904 Philips Semiconductors A wide-band class-A linear power amplifier (174 − 230 MHz) with two transistors BLV33 CONTENTS 1 ABSTRACT 2 INTRODUCTION
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BLV33
ECO7904
SCA57
hp778d
pm5171
RESISTOR CR25
RESISTOR CR25 philips
MGP990
2222-809-05002
2222-121
philips capacitor cross reference
PR52
BZY 56
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d947
Abstract: d949 80614 B0620 BD PNP Q62702-D947 BD612 BD616 Q62702-D949 Q62702-D951
Text: 5SC D • 023SbOS 3004303 T MSIE<S PIMP Silicon Epibase Transistors SIEMENS AKTIENGESELLSCHAF 'T~ 3 04383 7 D BD 612 BD 614 BD 616 BD 618 BD 620 The transistors BD 612, BD 614, BD 616, BD 618, and BD 6 2 0 are PNP silicon epibase power transistors in a plastic package similar to TO 202. The collector is electrically
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023SbOS
BD612
BD616
Q62702-D947
Q62702-D949
Q62702-D951
Q62702-D953
Q62702-D955
fl23SbGS
000436b
d947
d949
80614
B0620
BD PNP
Q62702-D947
BD612
BD616
Q62702-D949
Q62702-D951
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BD618
Abstract: BD 202 transistors
Text: 5SC D • 623Sb QS Q 0Q 4 3 Ö 3 T H S I E 6 PIMP Silicon Epibase Transistors SIEMENS AKTIENGESELLSCHAF 7 04383 D BD612 BD 614 BD616 BD 618 BD 620 The transistors BD 612, BD 614, BD 616, BD 618, and BD 620 are PNP silicon epibase power transistors in a plastic package similar to TO 202. The collector is electrically
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623Sb
BD612
BD616
Q62702-D947
Q62702-D949
Q62702-D951
Q62702-D953
Q62702-D955
612/BD
614/BD
BD618
BD 202 transistors
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BD977
Abstract: BD975 Q62702-D966 BD 976 BD979 QQG4457 Q62702-D964 BD 202 transistors
Text: T> m fl23 Sb 05 QQ044SS 0 « S I E 6 r 1 NPN Silicon Darlington Transistors SSC SIEMENS AKTIENGESELLSCHAF T-33-29 BD 975 BD 977 0 - BD 979 ^ 25 BD 975, BD 977, and BD 979 are epitaxial NPN silicon planar darlington transistors in plastic package similar to TO 202. These darlington transistors aredesigned for relay drivers
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fl23Sb05
T-33-29
Q62702-D962
Q62702-D964
Q62702-D966
BD975
BD977
-BD979
BD 976
BD979
QQG4457
BD 202 transistors
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828BD
Abstract: BD NPN transistors BD 826 NPN
Text: SIEMENS/ SPCLi SEMICOND S ûûD » • ö23 b32 Q 00142bQ b « S I P T-'Zfl-Ol Transistors — bipolar A F tran sisto rs P lastic package TO 202 Maximum ratings Type = N PNP = P V ceo BD 825'* BD 826" BD 827" BD 828” BD 829" BD 830" N P N P N P 45 45 60
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00142bQ
828BD
BD NPN transistors
BD 826 NPN
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D965
Abstract: b098 bd98 d965 hfe BD976 BD980 Q62702-D963 Q62702-D965 Q62702-D967 QQQ4430
Text: 2SC » • 0235bDS Q0DMM2T fl « S I E G ^ PNP Silicon Darlington Transistors BD 976 BD 978 SIEMENS AKTIEN GE SEL LSC HA F 04429 ßD 98Q BD 976, BD 978, and BD 9 8 0 are epitaxial PNP silicon planar darlington transistors in plastic package similar to TO 202. These darlington transistors are designed for relay
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235bQS
Q62702-D963
Q62702-D965
Q62702-D967
fl23SbOS
QQQ4432
0443Z
BD976
T-33-31
BD980
D965
b098
bd98
d965 hfe
BD980
Q62702-D967
QQQ4430
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siemens cca
Abstract: 62702-D
Text: 25C T> m fl23Sfc.0S 0004373 7 U lIZG . - r - 3 3 ' r f PNP Silicon Planar Transistors BD 487 _ BD 488 SIEMENS AKTIENGESELLSCHAF 04373 BD 487 and BD 488 are epitaxial PNP silicon planar transistors in a plastic package similar to TO 202. The collector is electrically connected to the metallic mounting area. The
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62702-D929
62702-D930
235b05
DQQ437b
siemens cca
62702-D
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Q4431
Abstract: No abstract text available
Text: 2SC » • û235bQS 000442*1 fl ■ SIEficÄ_., PNP Silicon Darlington Transistors BO 976 BD 978 SIEMENS AKTIENGESELLSCHAF 0 ^ 2 9 ßD 980 B D 976, BD 978, and BD 9 8 0 are epitaxial PNP silicon planar darlington transistors in plastic package similar to TO 202. These darlington transistors are designed for relay
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235bQS
Q4431
T-33-31
100oC;
fl235bQS
QQQ4432
j-33-31
BD976
BD978
BD980
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BD 202 transistors
Abstract: BD 204 B Scans-0010668 BD204 BD 203
Text: BD 202 * BD 204 Silizium-PNP-Epibasis-Leistungstransistoren Silicon PNP Epibase Power Transistors Anwendungen: NF-Endstufen A p p lic a tio n s : AF-output stages Besondere Merkmale: • Hohe Spitzenleistung Features: • High peak p o w e r • Hohe S trom verstärkung
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655/1077A1
BD 202 transistors
BD 204 B
Scans-0010668
BD204
BD 203
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BD204
Abstract: box78 BD202 BDX78 philips BDX77 BDX78 BD201 BD203 bd202 philips
Text: BD 202 BD204 BDX78 PHILIPS INTERNATIONAL 5LE D • 711DflEb 0D4EÔ1L. TIL BIPHIN T - J3 - Z - / SILICON EPITAXIAL-BASE PO W ER TRANSISTORS PNP transistors in a plastic envelope. With their npn complements BD201, BD203, and BDX77,they are primarily intended for use in hi-fi equipment delivering an output of 15 to 25 W into a 4 Î Î or
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BD204
BDX78
711DflEb
BD201,
BD203,
BDX77
BD202
BD204
O-220.
box78
BDX78 philips
BDX78
BD201
BD203
bd202 philips
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80487
Abstract: D487 BD PNP IBM 487 transistor D929 BD488 Q62702-D929 Q62702-D930 BD 202 transistors
Text: 2SC T> U fl535b05 QQ04373 7 M S I E 6 . PNP Silicon Planar Transistors -T-33'rt BD 487 _BD 488 SIEMENS AKTIENGESELLSCHAF 04373 B D 4 8 7 and B D 4 8 8 are epitaxial P N P silicon planar transistors in a plastic package similar to TO 202. The collector is electrically connected to the metallic mounting area. The
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Q62702-D929
Q62702-D930
rcaMS25Â
S35b05
DQQ437b
80487
D487
BD PNP
IBM 487
transistor D929
BD488
Q62702-D930
BD 202 transistors
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BD203
Abstract: bd204 BD201 BD 203 BD 201 transistors b0203 BD 202 transistors THP1
Text: BD 201 - BD 203 Silizium-NPN-Epibasis-Leistungstransistoren Silicon NPN Epibase Power Transistors Anwendungen: NF-Endstufen Applications: AF-output stages Besondere Merkmale: Features: • Hohe Spitzenleistung • High peak power • Hohe Stromverstärkung
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BD 862
Abstract: No abstract text available
Text: " 2SC D • 023SbOS 0004417 1 « S I E 6 r T-33“31. PNP Silicon Darlington Transistors j BD 862 BD 864 SIEMENS AKTIENGESELLSCHAF ° 80866 E p ib ase p o w e r d a rlin g to n tra n sisto rs 15 W BD 862, BD 864, and BD 866 are monolithic silicon PN P epibase power darlington transistors
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023SbOS
F--03
DQG4420
BD 862
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BD865
Abstract: BD861 ms 102y Q62702-D956 Q62702-D958 Q62702-D960
Text: 2SC D • T-33-29 ô53SbOS QQQMHIB 4 « S I E 6 . BD 861 BD 863 BD 865 NPN Silicon Darlington Transistors SIEMENS AKTIENÛESELLSCHAF 5C 04^ 13 ° E p ib a se p o w e r d a rlin g to n tra n s isto rs 15 W BD 861, BD 863, and BD 86 5 are m onolithic silicon NPN epibase pow er darlington transistors
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053SbOS
T-33-29
Q62702-D956
Q62702-D958
235b05
QQG441b
bd861
T-33-29
AKTIENGESELLSCHAF-BD865
BD865
BD861
ms 102y
Q62702-D960
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transistor k 975
Abstract: c 879 transistor afe 1000 BD880 darlington bd 876 BD876 d966 transistor bd 975 transistor BD878 BD 875
Text: 2SC » • 023SbOS 0QGH421 3 ■ S I E 6 - ' NPN Silicon Planar Darlington Transistors SIEMENS AKTIEN6ESELLSCHAF 21 T-33-29 BD 875 BD 877 BD 879 ° BD 875, BD 877, and BD 879 are epitaxial NPN silicon planar darlington transistors in TO 126 plastic package 12 A 3 DIN 41869, sheet 4 . These darlington transistors
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023SbOS
T-33-29
Q62702-D902
Q62702-D903
Q62702-D904
Q62902-B63
Q62902-B62
25imi
BD977
transistor k 975
c 879 transistor
afe 1000
BD880
darlington bd 876
BD876
d966 transistor
bd 975 transistor
BD878
BD 875
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J 3305
Abstract: BD839 BD843 BD840 BD841 BD842 BD844 IEC134
Text: BD839 BD841 BD843 PHILIPS I N T E RNATIONAL SbE J> • 7110fl2b 0043020 273 HiPHIN T-33 -OS' SILICON PLANAR EPITAXIAL POWER TRANSISTORS N-P-N silicon transistors, in a plastic T 0 -2 0 2 envelope, recommended fo r use in television circuits and audio applications.
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BD839
BD841
BD843
7110fl2b
T-3Z-05-
T0-202
BD840,
BD842
BD844.
BD839
J 3305
BD843
BD840
BD841
BD844
IEC134
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cqx 87
Abstract: germanium AEG Thyristor T 558 F TDA 2516 bu208 bf506 la 4430 BF963 TDA1086 transistor bf 175
Text: Page Contents Diodes 8 Transistors 15 Optoelectronic Devices 24 Integrated Circuits 33 1 Contents, alpha-numeric Type Page AA 112 AA113 AA117 AA 118 AA119 AA 132 AA 133 AA 134 AA 137 AA 138 12 12 8 12 12 8 8 8 12 12 BA 111 BA 121 BA 124 BA 125 BA 147/. BA 157
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AA113
AA117
AA119
BAV17
BAV18
BAV19
BAV20
BAV21
cqx 87
germanium
AEG Thyristor T 558 F
TDA 2516
bu208
bf506
la 4430
BF963
TDA1086
transistor bf 175
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transistor kt 326
Abstract: transistor KT 3107 Belcanto ST 3010 transistor BU 5027 J 5027-R atakassette SANYO CTP 4360 transistor kt 925 Transstereo 2401.00 transistor KT 816
Text: SERVICE-MITTEILUNGEN V E B IN D U S T R IE V E R T R IE B R U N D F U N K U N O F E R N S E H E N ir .f -t j | R A P io -teievlslon JUNI/JULI 1960 6/7 SKITB 1-8 Mitteilung aus dem VEB Fernsehgerätewerke Staßfurt Informationen für den Fernsehgeräteservice
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transistor bd826
Abstract: bd830 BD 829 BD825 BD828
Text: BD826 BD828 BD830 SILICON PLANAR EPITAXIAL POWER TRANSISTORS General purpose P-N-P transistors, in T 0 -2 0 2 plastic packages, recom m ended fo r d rive r stages in h i-fi am p lifie rs and television circuits. N-P-N com plem ents are BD825, BD827 and BD 829. M atched pairs can be supplied.
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BD826
BD828
BD830
BD825,
BD827
BD830
transistor bd826
BD 829
BD825
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ksd 302 250v, 10a
Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643
Text: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle
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CB-F36c
2SD1642
2SD2182,
2SC4489,
-08S-
ksd 302 250v, 10a
irf 5630
transistor 2SB 367
IRF 3055
AC153Y
transistor ESM 2878
TIP 43c transistor
2sk116
bf199
bd643
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KT 819 transistor
Abstract: 2N2222A 338 SF129D SF137D SSY20B KT819W SF127E KFY18 321 KP303W KFY18
Text: Deutsche Post NfD Studiotechnik Fernsehen Bauelemente - Mitteilung Nr. 6 TRANSISTORVERGLEICHSLISTE Herausgebers Halbleitervergleichsgruppe Studiotechnik Fernsehen Deutsche Post Studiotechnik Fernsehen Bauelemente-Mitteilung Nr. 6 Dez. 79 N f D T r a n s i s t o r v e r g l e i c h s l i s t e
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Transistor 2SA 2SB 2SC 2SD
Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59
Text: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle
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