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    BD 202 TRANSISTORS Search Results

    BD 202 TRANSISTORS Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    BD 202 TRANSISTORS Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    motorola 1N4148

    Abstract: DSP56301 JP13 MCM54800AJ70 HC94U-27 qs3245sog DSP5603 seiko hc 1000 GRM42-6COG* murata GRM42-6CO
    Text: DSP56301ADM User’s Manual Motorola, Incorporated Semiconductor Products Sector Wireless Division 6501 William Cannon Drive West Austin, TX 78735-8598 Order this document by: DSP56301ADMUM/AD Introduction This document supports the DSP56301 Application Development Module


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    PDF DSP56301ADM DSP56301ADMUM/AD DSP56301 DSP56301ADM) Augat/RD1-MC6-P102-02 30-pin TSM11501SDV 14-pin TSM10701SDV 20-pin motorola 1N4148 JP13 MCM54800AJ70 HC94U-27 qs3245sog DSP5603 seiko hc 1000 GRM42-6COG* murata GRM42-6CO

    74HCT244 SMD

    Abstract: NSH-02SB-S2-TG30 bergstik MCM54800AJ70 4609X-101-103 Augat A08 smd transistor 41B toshiba c650 DSP56301 JP13
    Text: Freescale Semiconductor, Inc. Freescale Semiconductor, Inc. DSP56301ADM User’s Manual Motorola, Incorporated Semiconductor Products Sector Wireless Division 6501 William Cannon Drive West Austin, TX 78735-8598 For More Information On This Product, Go to: www.freescale.com


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    PDF DSP56301ADM DSP56301ADMUM/AD DSP56301 DSP56301ADM) TSM11001SDV TSM10301SDV E101MD1ABE 90HBW04S E121SD1AGE DSP56301ADMUM/AD, 74HCT244 SMD NSH-02SB-S2-TG30 bergstik MCM54800AJ70 4609X-101-103 Augat A08 smd transistor 41B toshiba c650 JP13

    hp778d

    Abstract: pm5171 RESISTOR CR25 RESISTOR CR25 philips MGP990 2222-809-05002 2222-121 philips capacitor cross reference PR52 BZY 56
    Text: APPLICATION NOTE A wide-band class-A linear power amplifier 174 − 230 MHz with two transistors BLV33 ECO7904 Philips Semiconductors A wide-band class-A linear power amplifier (174 − 230 MHz) with two transistors BLV33 CONTENTS 1 ABSTRACT 2 INTRODUCTION


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    PDF BLV33 ECO7904 SCA57 hp778d pm5171 RESISTOR CR25 RESISTOR CR25 philips MGP990 2222-809-05002 2222-121 philips capacitor cross reference PR52 BZY 56

    d947

    Abstract: d949 80614 B0620 BD PNP Q62702-D947 BD612 BD616 Q62702-D949 Q62702-D951
    Text: 5SC D • 023SbOS 3004303 T MSIE<S PIMP Silicon Epibase Transistors SIEMENS AKTIENGESELLSCHAF 'T~ 3 04383 7 D BD 612 BD 614 BD 616 BD 618 BD 620 The transistors BD 612, BD 614, BD 616, BD 618, and BD 6 2 0 are PNP silicon epibase power transistors in a plastic package similar to TO 202. The collector is electrically


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    PDF 023SbOS BD612 BD616 Q62702-D947 Q62702-D949 Q62702-D951 Q62702-D953 Q62702-D955 fl23SbGS 000436b d947 d949 80614 B0620 BD PNP Q62702-D947 BD612 BD616 Q62702-D949 Q62702-D951

    BD618

    Abstract: BD 202 transistors
    Text: 5SC D • 623Sb QS Q 0Q 4 3 Ö 3 T H S I E 6 PIMP Silicon Epibase Transistors SIEMENS AKTIENGESELLSCHAF 7 04383 D BD612 BD 614 BD616 BD 618 BD 620 The transistors BD 612, BD 614, BD 616, BD 618, and BD 620 are PNP silicon epibase power transistors in a plastic package similar to TO 202. The collector is electrically


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    PDF 623Sb BD612 BD616 Q62702-D947 Q62702-D949 Q62702-D951 Q62702-D953 Q62702-D955 612/BD 614/BD BD618 BD 202 transistors

    BD977

    Abstract: BD975 Q62702-D966 BD 976 BD979 QQG4457 Q62702-D964 BD 202 transistors
    Text: T> m fl23 Sb 05 QQ044SS 0 « S I E 6 r 1 NPN Silicon Darlington Transistors SSC SIEMENS AKTIENGESELLSCHAF T-33-29 BD 975 BD 977 0 - BD 979 ^ 25 BD 975, BD 977, and BD 979 are epitaxial NPN silicon planar darlington transistors in plastic package similar to TO 202. These darlington transistors aredesigned for relay drivers


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    PDF fl23Sb05 T-33-29 Q62702-D962 Q62702-D964 Q62702-D966 BD975 BD977 -BD979 BD 976 BD979 QQG4457 BD 202 transistors

    828BD

    Abstract: BD NPN transistors BD 826 NPN
    Text: SIEMENS/ SPCLi SEMICOND S ûûD » • ö23 b32 Q 00142bQ b « S I P T-'Zfl-Ol Transistors — bipolar A F tran sisto rs P lastic package TO 202 Maximum ratings Type = N PNP = P V ceo BD 825'* BD 826" BD 827" BD 828” BD 829" BD 830" N P N P N P 45 45 60


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    PDF 00142bQ 828BD BD NPN transistors BD 826 NPN

    D965

    Abstract: b098 bd98 d965 hfe BD976 BD980 Q62702-D963 Q62702-D965 Q62702-D967 QQQ4430
    Text: 2SC » • 0235bDS Q0DMM2T fl « S I E G ^ PNP Silicon Darlington Transistors BD 976 BD 978 SIEMENS AKTIEN GE SEL LSC HA F 04429 ßD 98Q BD 976, BD 978, and BD 9 8 0 are epitaxial PNP silicon planar darlington transistors in plastic package similar to TO 202. These darlington transistors are designed for relay


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    PDF 235bQS Q62702-D963 Q62702-D965 Q62702-D967 fl23SbOS QQQ4432 0443Z BD976 T-33-31 BD980 D965 b098 bd98 d965 hfe BD980 Q62702-D967 QQQ4430

    siemens cca

    Abstract: 62702-D
    Text: 25C T> m fl23Sfc.0S 0004373 7 U lIZG . - r - 3 3 ' r f PNP Silicon Planar Transistors BD 487 _ BD 488 SIEMENS AKTIENGESELLSCHAF 04373 BD 487 and BD 488 are epitaxial PNP silicon planar transistors in a plastic package similar to TO 202. The collector is electrically connected to the metallic mounting area. The


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    PDF 62702-D929 62702-D930 235b05 DQQ437b siemens cca 62702-D

    Q4431

    Abstract: No abstract text available
    Text: 2SC » • û235bQS 000442*1 fl ■ SIEficÄ_., PNP Silicon Darlington Transistors BO 976 BD 978 SIEMENS AKTIENGESELLSCHAF 0 ^ 2 9 ßD 980 B D 976, BD 978, and BD 9 8 0 are epitaxial PNP silicon planar darlington transistors in plastic package similar to TO 202. These darlington transistors are designed for relay


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    PDF 235bQS Q4431 T-33-31 100oC; fl235bQS QQQ4432 j-33-31 BD976 BD978 BD980

    BD 202 transistors

    Abstract: BD 204 B Scans-0010668 BD204 BD 203
    Text: BD 202 * BD 204 Silizium-PNP-Epibasis-Leistungstransistoren Silicon PNP Epibase Power Transistors Anwendungen: NF-Endstufen A p p lic a tio n s : AF-output stages Besondere Merkmale: • Hohe Spitzenleistung Features: • High peak p o w e r • Hohe S trom verstärkung


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    PDF 655/1077A1 BD 202 transistors BD 204 B Scans-0010668 BD204 BD 203

    BD204

    Abstract: box78 BD202 BDX78 philips BDX77 BDX78 BD201 BD203 bd202 philips
    Text: BD 202 BD204 BDX78 PHILIPS INTERNATIONAL 5LE D • 711DflEb 0D4EÔ1L. TIL BIPHIN T - J3 - Z - / SILICON EPITAXIAL-BASE PO W ER TRANSISTORS PNP transistors in a plastic envelope. With their npn complements BD201, BD203, and BDX77,they are primarily intended for use in hi-fi equipment delivering an output of 15 to 25 W into a 4 Î Î or


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    PDF BD204 BDX78 711DflEb BD201, BD203, BDX77 BD202 BD204 O-220. box78 BDX78 philips BDX78 BD201 BD203 bd202 philips

    80487

    Abstract: D487 BD PNP IBM 487 transistor D929 BD488 Q62702-D929 Q62702-D930 BD 202 transistors
    Text: 2SC T> U fl535b05 QQ04373 7 M S I E 6 . PNP Silicon Planar Transistors -T-33&#39;rt BD 487 _BD 488 SIEMENS AKTIENGESELLSCHAF 04373 B D 4 8 7 and B D 4 8 8 are epitaxial P N P silicon planar transistors in a plastic package similar to TO 202. The collector is electrically connected to the metallic mounting area. The


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    PDF Q62702-D929 Q62702-D930 rcaMS25Â S35b05 DQQ437b 80487 D487 BD PNP IBM 487 transistor D929 BD488 Q62702-D930 BD 202 transistors

    BD203

    Abstract: bd204 BD201 BD 203 BD 201 transistors b0203 BD 202 transistors THP1
    Text: BD 201 - BD 203 Silizium-NPN-Epibasis-Leistungstransistoren Silicon NPN Epibase Power Transistors Anwendungen: NF-Endstufen Applications: AF-output stages Besondere Merkmale: Features: • Hohe Spitzenleistung • High peak power • Hohe Stromverstärkung


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    BD 862

    Abstract: No abstract text available
    Text: " 2SC D • 023SbOS 0004417 1 « S I E 6 r T-33“31. PNP Silicon Darlington Transistors j BD 862 BD 864 SIEMENS AKTIENGESELLSCHAF ° 80866 E p ib ase p o w e r d a rlin g to n tra n sisto rs 15 W BD 862, BD 864, and BD 866 are monolithic silicon PN P epibase power darlington transistors


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    PDF 023SbOS F--03 DQG4420 BD 862

    BD865

    Abstract: BD861 ms 102y Q62702-D956 Q62702-D958 Q62702-D960
    Text: 2SC D • T-33-29 ô53SbOS QQQMHIB 4 « S I E 6 . BD 861 BD 863 BD 865 NPN Silicon Darlington Transistors SIEMENS AKTIENÛESELLSCHAF 5C 04^ 13 ° E p ib a se p o w e r d a rlin g to n tra n s isto rs 15 W BD 861, BD 863, and BD 86 5 are m onolithic silicon NPN epibase pow er darlington transistors


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    PDF 053SbOS T-33-29 Q62702-D956 Q62702-D958 235b05 QQG441b bd861 T-33-29 AKTIENGESELLSCHAF-BD865 BD865 BD861 ms 102y Q62702-D960

    transistor k 975

    Abstract: c 879 transistor afe 1000 BD880 darlington bd 876 BD876 d966 transistor bd 975 transistor BD878 BD 875
    Text: 2SC » • 023SbOS 0QGH421 3 ■ S I E 6 - ' NPN Silicon Planar Darlington Transistors SIEMENS AKTIEN6ESELLSCHAF 21 T-33-29 BD 875 BD 877 BD 879 ° BD 875, BD 877, and BD 879 are epitaxial NPN silicon planar darlington transistors in TO 126 plastic package 12 A 3 DIN 41869, sheet 4 . These darlington transistors


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    PDF 023SbOS T-33-29 Q62702-D902 Q62702-D903 Q62702-D904 Q62902-B63 Q62902-B62 25imi BD977 transistor k 975 c 879 transistor afe 1000 BD880 darlington bd 876 BD876 d966 transistor bd 975 transistor BD878 BD 875

    J 3305

    Abstract: BD839 BD843 BD840 BD841 BD842 BD844 IEC134
    Text: BD839 BD841 BD843 PHILIPS I N T E RNATIONAL SbE J> • 7110fl2b 0043020 273 HiPHIN T-33 -OS' SILICON PLANAR EPITAXIAL POWER TRANSISTORS N-P-N silicon transistors, in a plastic T 0 -2 0 2 envelope, recommended fo r use in television circuits and audio applications.


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    PDF BD839 BD841 BD843 7110fl2b T-3Z-05- T0-202 BD840, BD842 BD844. BD839 J 3305 BD843 BD840 BD841 BD844 IEC134

    cqx 87

    Abstract: germanium AEG Thyristor T 558 F TDA 2516 bu208 bf506 la 4430 BF963 TDA1086 transistor bf 175
    Text: Page Contents Diodes 8 Transistors 15 Optoelectronic Devices 24 Integrated Circuits 33 1 Contents, alpha-numeric Type Page AA 112 AA113 AA117 AA 118 AA119 AA 132 AA 133 AA 134 AA 137 AA 138 12 12 8 12 12 8 8 8 12 12 BA 111 BA 121 BA 124 BA 125 BA 147/. BA 157


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    PDF AA113 AA117 AA119 BAV17 BAV18 BAV19 BAV20 BAV21 cqx 87 germanium AEG Thyristor T 558 F TDA 2516 bu208 bf506 la 4430 BF963 TDA1086 transistor bf 175

    transistor kt 326

    Abstract: transistor KT 3107 Belcanto ST 3010 transistor BU 5027 J 5027-R atakassette SANYO CTP 4360 transistor kt 925 Transstereo 2401.00 transistor KT 816
    Text: SERVICE-MITTEILUNGEN V E B IN D U S T R IE V E R T R IE B R U N D F U N K U N O F E R N S E H E N ir .f -t j | R A P io -teievlslon JUNI/JULI 1960 6/7 SKITB 1-8 Mitteilung aus dem VEB Fernsehgerätewerke Staßfurt Informationen für den Fernsehgeräteservice


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    transistor bd826

    Abstract: bd830 BD 829 BD825 BD828
    Text: BD826 BD828 BD830 SILICON PLANAR EPITAXIAL POWER TRANSISTORS General purpose P-N-P transistors, in T 0 -2 0 2 plastic packages, recom m ended fo r d rive r stages in h i-fi am p lifie rs and television circuits. N-P-N com plem ents are BD825, BD827 and BD 829. M atched pairs can be supplied.


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    PDF BD826 BD828 BD830 BD825, BD827 BD830 transistor bd826 BD 829 BD825

    ksd 302 250v, 10a

    Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643
    Text: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle


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    PDF CB-F36c 2SD1642 2SD2182, 2SC4489, -08S- ksd 302 250v, 10a irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643

    KT 819 transistor

    Abstract: 2N2222A 338 SF129D SF137D SSY20B KT819W SF127E KFY18 321 KP303W KFY18
    Text: Deutsche Post NfD Studiotechnik Fernsehen Bauelemente - Mitteilung Nr. 6 TRANSISTORVERGLEICHSLISTE Herausgebers Halbleitervergleichsgruppe Studiotechnik Fernsehen Deutsche Post Studiotechnik Fernsehen Bauelemente-Mitteilung Nr. 6 Dez. 79 N f D T r a n s i s t o r v e r g l e i c h s l i s t e


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    Transistor 2SA 2SB 2SC 2SD

    Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59
    Text: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle


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