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    BC337 TRANSISTOR PNP Search Results

    BC337 TRANSISTOR PNP Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    BC337 TRANSISTOR PNP Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BC337

    Abstract: TRANSISTOR BC337 NPN general purpose transistor BC337 BC337-40 NPN transistor TRANSISTOR BC337-25 PNP BC337-25 PNP transistor BC33716 TRANSISTOR BC337-25 BC337 pnp transistor bc337-25 Philips
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 BC337 NPN general purpose transistor Product specification Supersedes data of 1997 Mar 10 1999 Apr 15 Philips Semiconductors Product specification NPN general purpose transistor BC337 PINNING FEATURES


    Original     		PDF M3D186 BC337 BC327. MAM182 SCA63 115002/00/03/pp8 BC337 TRANSISTOR BC337 NPN general purpose transistor BC337 BC337-40 NPN transistor TRANSISTOR BC337-25 PNP BC337-25 PNP transistor BC33716 TRANSISTOR BC337-25 BC337 pnp transistor bc337-25 Philips

    BC327 45V 800mA PNP Transistor

    Abstract: BC337 45V 800mA NPN Transistor transistor bc337 datasheet BC327 BC337 BC327 800mA PNP Transistor
    Text: SEMICONDUCTOR BC327 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B C FEATURES A ᴌHigh Current : IC=-800mA. ᴌDC Current Gain : hFE=100ᴕ630 VCE=-1V, Ic=-100mA . ᴌFor Complementary with NPN type BC337.


    Original     		PDF BC327 -800mA. -100mA) BC337. BC327 45V 800mA PNP Transistor BC337 45V 800mA NPN Transistor transistor bc337 datasheet BC327 BC337 BC327 800mA PNP Transistor

    BC337 45V 800mA NPN Transistor

    Abstract: BC327 45V 800mA PNP Transistor BC337 45V 800mA BC337 pnp transistor datasheet transistor bc337 datasheet BC327 BC337
    Text: SEMICONDUCTOR BC337 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B C FEATURES A ᴌHigh Current : IC=800mA. ᴌDC Current Gain : hFE=100ᴕ630 VCE=1V, Ic=100mA . ᴌFor Complementary with PNP type BC327.


    Original     		PDF BC337 800mA. 100mA) BC327. BC337 45V 800mA NPN Transistor BC327 45V 800mA PNP Transistor BC337 45V 800mA BC337 pnp transistor datasheet transistor bc337 datasheet BC327 BC337

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD BC327/328 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS  FEATURES * Suitable for AF-Driver stages and low power output stages * Complement to UTC BC337/338 1 TO-92  ORDERING INFORMATION Ordering Number


    Original     		PDF BC327/328 BC337/338 BC327L-xx-T92-B BC327G-xx-T92-B BC327L-xx-T92-K BC327G-xx-T92-K BC328L-xx-T92-B BC328G-xx-T92-B BC328L-xx-T92-K BC328G-xx-T92-K

    BC327

    Abstract: BC327 45V 800mA PNP Transistor f 630 TRANSISTOR BC327 45V 800mA NPN Transistor BC327 800mA PNP Transistor BC337 45V 800mA NPN Transistor bc327 45v 800mA pnp hFE-100 BC327 NPN transistor bc327 application note
    Text: SEMICONDUCTOR BC327 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES High Current : IC=-800mA. DC Current Gain : hFE=100 630 VCE=-1V, Ic=-100mA . For Complementary with NPN type BC337. MAXIMUM RATING (Ta=25


    Original     		PDF BC327 -800mA. -100mA) BC337. -100mA -500mA, -50mA -300mA -10mA, 100MHz BC327 BC327 45V 800mA PNP Transistor f 630 TRANSISTOR BC327 45V 800mA NPN Transistor BC327 800mA PNP Transistor BC337 45V 800mA NPN Transistor bc327 45v 800mA pnp hFE-100 BC327 NPN transistor bc327 application note

    transistor BC327

    Abstract: BC307 BC327 PNP transistor download datasheet 100C BC327 BC328 BC338
    Text: BC327/328 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS TO-92 • Suitable for AF-Driver stages and low power output stages • Complement to BC337/BC338 ABSOLUTE MAXIMUM RATINGS TA=25°°C Characteristic Symbol Collector-Emitter Voltage


    Original     		PDF BC327/328 BC337/BC338 BC327 BC328 transistor BC327 BC307 BC327 PNP transistor download datasheet 100C BC327 BC328 BC338

    BC337

    Abstract: BC337 45V 800mA NPN Transistor BC327 45V 800mA PNP Transistor BC327 45V 800mA NPN Transistor BC337 45V 800mA f 630 TRANSISTOR hFE-100 BC327
    Text: SEMICONDUCTOR BC337 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B C FEATURES A High Current : IC=800mA. DC Current Gain : hFE=100 630 VCE=1V, Ic=100mA . For Complementary with PNP type BC327. N E K G


    Original     		PDF BC337 800mA. 100mA) BC327. 00TTER 100mA 500mA, 300mA 100MHz BC337 BC337 45V 800mA NPN Transistor BC327 45V 800mA PNP Transistor BC327 45V 800mA NPN Transistor BC337 45V 800mA f 630 TRANSISTOR hFE-100 BC327

    Untitled

    Abstract: No abstract text available
    Text: BC337… BC338 NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low-power output stages. These types are also available subdivided into three groups -16, -25 and -40,according to their DC


    Original     		PDF BC337â BC338 BC327 BC328 BC337 500mA, 300mA

    TRANSISTOR BC327-40

    Abstract: bc327 TRANSISTOR
    Text: UTC BC327/328 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS FEATURES *Suitable for AF-Driver stages and low power output stages *Complement to BC337/338 1 TO-92 1: COLLECTOR 2: BASE 3: EMITTER ABSOLUTE MAXIMUM RATINGS Ta=25°C, unless otherwise specified


    Original     		PDF BC327/328 BC337/338 BC327 BC328 QW-R201-038 TRANSISTOR BC327-40 bc327 TRANSISTOR

    bc338

    Abstract: No abstract text available
    Text: BC327/328 BC327/328 Switching and Amplifier Applications • Suitable for AF-Driver stages and low power output stages • Complement to BC337/BC338 TO-92 1 1. Collector 2. Base 3. Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted


    Original     		PDF BC327/328 BC337/BC338 BC327 BC328 BC327 bc338

    bc337 fairchild

    Abstract: BC337 pnp transistor
    Text: BC327/328 BC327/328 Switching and Amplifier Applications • Suitable for AF-Driver stages and low power output stages • Complement to BC337/BC338 TO-92 1 1. Collector 2. Base 3. Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted


    Original     		PDF BC327/328 BC337/BC338 BC327 BC328 BC32ugh bc337 fairchild BC337 pnp transistor

    BC307

    Abstract: 2001 PNP TO-92
    Text: BC327/328 BC327/328 Switching and Amplifier Applications • Suitable for AF-Driver stages and low power output stages • Complement to BC337/BC338 TO-92 1 1. Collector 2. Base 3. Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted


    Original     		PDF BC327/328 BC337/BC338 BC327 BC328 BC32Product BC32716TA BC307 2001 PNP TO-92

    Untitled

    Abstract: No abstract text available
    Text: UTC BC327/328 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS FEATURES *Suitable for AF-Driver stages and low power output stages *Complement to BC337/338 1 TO-92 1: COLLECTOR 2: BASE 3: EMITTER ABSOLUTE MAXIMUM RATINGS Ta=25°C, unless otherwise specified


    Original     		PDF BC327/328 BC337/338 BC327 BC328 -300mA -10mA, 20MHz QW-R201-038

    BC327

    Abstract: BC327 PNP transistor download datasheet BC327 transistor utc BC328 328 transistor BC327 pnp transistor datasheet PNP BC327 transistor bc327 BC328 OF TRANSISTOR BC337
    Text: UTC BC327/328 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS FEATURES *Suitable for AF-Driver stages and low power output stages *Complement to BC337/338 1 TO-92 1: COLLECTOR 2: BASE 3: EMITTER ABSOLUTE MAXIMUM RATINGS Ta=25°C, unless otherwise specified


    Original     		PDF BC327/328 BC337/338 BC327 BC328 QW-R201-038 BC327 BC327 PNP transistor download datasheet BC327 transistor utc BC328 328 transistor BC327 pnp transistor datasheet PNP BC327 transistor bc327 BC328 OF TRANSISTOR BC337

    BC327

    Abstract: BC328
    Text: BC327/328 BC327/328 Switching and Amplifier Applications • Suitable for AF-Driver stages and low power output stages • Complement to BC337/BC338 TO-92 1 1. Collector 2. Base 3. Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted


    Original     		PDF BC327/328 BC337/BC338 BC327 BC328 BC327 BC328

    transistor 835

    Abstract: Amplifier with transistor BC548 TRANSISTOR regulator AUDIO Amplifier with transistor BC548 transistor 81 110 w 85 transistor 81 110 w 63 transistor transistor 438 TRANSISTOR GUIDE transistor 649
    Text: Philips Semiconductors Alphanumeric index Selection guide PAGE BC327; BC327A; BC328 Silicon planar epitaxial transistor 58 BC337; BC337A; BC338 Silicon planar epitaxial transistor 59 BC546; BC547; BC548 Silicon planar epitaxial transistor 60 BC556; BC557; BC558


    OCR Scan     		PDF BC327; BC327A; BC328 BC337; BC337A; BC338 BC546; BC547; BC548 BC556; transistor 835 Amplifier with transistor BC548 TRANSISTOR regulator AUDIO Amplifier with transistor BC548 transistor 81 110 w 85 transistor 81 110 w 63 transistor transistor 438 TRANSISTOR GUIDE transistor 649

    BC327

    Abstract: BC337 BC327 W 75 BC327 transistor BC337 45V 800mA NPN Transistor
    Text: SEMICONDUCTOR TECHNICAL DATA BC327 EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES • High Current : Ic=-800mA. • DC Current Gain : hFE=100~630 VCE=-1V, Ic=-100mA . • For Complementary with NPN type BC337.


    OCR Scan     		PDF BC327 -800mA. -100mA) BC337. BC327 BC337 BC327 W 75 BC327 transistor BC337 45V 800mA NPN Transistor

    BC337 45V 800mA NPN Transistor

    Abstract: transistor bc327 BC327 BC337 bc337 45v 800mA
    Text: KOREA ELECTRONICS CO.,LTD. SEMICONDUCTOR TECHNICAL DATA BC337 EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES • High Current : Ic=800mA. • DC Current Gain : hFE=100-400 VCE=1V, Ic=100mA . • For Complementary with PNP type BC327.


    OCR Scan     		PDF BC337 800mA. 100mA) BC327. BC337 45V 800mA NPN Transistor transistor bc327 BC327 BC337 bc337 45v 800mA

    Untitled

    Abstract: No abstract text available
    Text: B C 327 SEMICONDUCTOR " TECHNICAL DATA PNP EPITAXIAL SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS * Complement To Bc337 ABSOLUTE MAXIMUM RATINGS a t Tamb*25°C Symbol Rating C haracteristic Unit Collector-Emitter Voltage Vces -50 V Collector-Emitter Voltage


    OCR Scan     		PDF Bc337 -100uA -10mA 100mA -300mA -500mA -50mA -10mA

    TRANSISTOR pnp BC328

    Abstract: BC327 BC328 BC337 pnp transistor
    Text: BC327/328 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS • SUITABLE FOR AF-ORIVER STAGES AND LOW POWER OUTPUT STAGES •Complement to BC337/BC338 AB SO LU TE MAXIMUM RATINGS Ta = 25°C Characteristic Sym bol C ollector Em itter Voltage


    OCR Scan     		PDF BC327/328 BC337/BC338 BC327 BC328 -10mA, 00250S7 TRANSISTOR pnp BC328 BC327 BC328 BC337 pnp transistor

    BC337 45V 800mA NPN Transistor

    Abstract: BC327 BC337 NPN general purpose transistor BC337 BC337 pnp transistor
    Text: SEMICONDUCTOR TECHNICAL DATA BC337 EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES • High Current : Ic=800mA. • DC Current Gain : hFE=100-630 VCe=1V, Ic=100mA . • For Complementary with PNP type BC327. MAXIMUM RATINGS (Ta=25°C)


    OCR Scan     		PDF BC337 800mA. 100mA) BC327. BC337 45V 800mA NPN Transistor BC327 BC337 NPN general purpose transistor BC337 BC337 pnp transistor

    BC327 45V 800mA PNP Transistor

    Abstract: BC327 BC337 OF TRANSISTOR BC337 BC337 NPN transistor
    Text: KOREA ELECTRONICS CO.,LTD. SEMICONDUCTOR TECHNICAL DATA BC327 EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES • High Current : Ic=-800mA. • DC Current Gain : hFE=100-400 VCe=-1V, Ic=-100mA . • For Complementary with NPN type BC337.


    OCR Scan     		PDF BC327 -800mA. -100mA) BC337. BC327 45V 800mA PNP Transistor BC327 BC337 OF TRANSISTOR BC337 BC337 NPN transistor

    BC337 pnp transistor

    Abstract: No abstract text available
    Text: PNP EPITAXIAL SILICON TRANSISTOR BC327/328 SWITCHING AND AMPLIFIER APPLICATIONS TO-92 • Suitable for AF-Driver stages and low power output stages • Complement to BC337/BC338 ABSOLUTE MAXIMUM RATINGS TA= 2 5 t C haracteristic Sym bol Collector-Em itter Voltage


    OCR Scan     		PDF BC327/328 BC337/BC338 SC327 BC328 BC327 BC337 pnp transistor

    C 337-25

    Abstract: C 33725 c337 pnp transistor C 337-40 c 33740 transistor NPN c337 BC337 sot54 c337 transistor transistor c337 C337 W 63
    Text: DISCRETE SEMICONDUCTORS Product specification Supersedes data of 1997 Mar 10 Philips Sem iconductors 1999 Apr 15 PHILIPS Philips Semiconductors Product specification NPN general purpose transistor BC337 FEATURES PINNING • High current max. 500 mA PIN • Low voltage (max. 45 V).


    OCR Scan     		PDF BC337 BC327. 115002/00/03/pp8 C 337-25 C 33725 c337 pnp transistor C 337-40 c 33740 transistor NPN c337 BC337 sot54 c337 transistor transistor c337 C337 W 63