BC 104 TRANSISTOR Search Results

BC 104 TRANSISTOR Result Highlights (5)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

BC 104 TRANSISTOR Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
transistors BC 557C Abstract: transistors BC 558c 556B transistor BC 557B ic 556 datasheet 559C transistors bc 557b ic 556 558B equivalent bc 558b Text: BC 556 . BC 559 PNP General Purpose Transistors Si-Epitaxial PlanarTransistors PNP Power dissipation – Verlustleistung 500 mW Plastic case Kunststoffgehäuse TO-92 10D3 Weight approx. – Gewicht ca. 0.18 g Plastic material has UL classification 94V-0	Original	PDF	UL94V-0 transistors BC 557C transistors BC 558c 556B transistor BC 557B ic 556 datasheet 559C transistors bc 557b ic 556 558B equivalent bc 558b
ic 546 Abstract: 549B 546b transistors BC 548C ic 548 transistors 547C transistors BC 546 B bc 548b bc 104 npn transistor bc 547b Text: BC 546 . BC 549 NPN General Purpose Transistors Si-Epitaxial PlanarTransistors NPN Power dissipation – Verlustleistung 500 mW Plastic case Kunststoffgehäuse TO-92 10D3 Weight approx. – Gewicht ca. 0.18 g Plastic material has UL classification 94V-0	Original	PDF	UL94V-0 ic 546 549B 546b transistors BC 548C ic 548 transistors 547C transistors BC 546 B bc 548b bc 104 npn transistor bc 547b
BC860W Abstract: No abstract text available Text: BC 856W . BC 860W General Purpose Transistors Surface mount Si-Epitaxial PlanarTransistors Si-Epitaxial PlanarTransistoren für die Oberflächenmontage PNP 2±0.1 1±0.1 Type Code 1 1.25±0.1 3 2.1±0.1 0.3 Power dissipation – Verlustleistung 200 mW Plastic case	Original	PDF	OT-323 UL94V-0 856AW 857AW 857BW 857CW 858AW 858BW 858CW 859BW BC860W
Untitled Abstract: No abstract text available Text: BC 856W . BC 860W General Purpose Transistors Surface mount Si-Epitaxial PlanarTransistors Si-Epitaxial PlanarTransistoren für die Oberflächenmontage PNP 2±0.1 Type Code 1 1.25±0.1 3 2.1±0.1 0.3 1±0.1 Power dissipation – Verlustleistung 200 mW Plastic case	Original	PDF	OT-323 UL94V-0 856AW 857AW 858AW 856BW 857BW 858BW 859BW 860BW
transistors BC 23 Abstract: 849B 847C 848B Text: BC 846 . BC 850 General Purpose Transistors Surface mount Si-Epitaxial PlanarTransistors Si-Epitaxial PlanarTransistoren für die Oberflächenmontage NPN NPN Power dissipation – Verlustleistung Plastic case Kunststoffgehäuse 1.1 2.9 ±0.1 0.4 1.3 ±0.1	Original	PDF	OT-23 O-236) UL94V-0 transistors BC 23 849B 847C 848B
BC 620 Abstract: 847BW 846BW 850CW Text: BC 846W . BC 850W General Purpose Transistors Surface mount Si-Epitaxial PlanarTransistors Si-Epitaxial PlanarTransistoren für die Oberflächenmontage NPN 2±0.1 1±0.1 Type Code 1 1.25±0.1 3 2.1±0.1 0.3 NPN Power dissipation – Verlustleistung 200 mW	Original	PDF	OT-323 UL94V-0 846AW 847AW 847BW 847CW 848AW 848BW 848CW 849BW BC 620 847BW 846BW 850CW
856B Abstract: 858C Text: BC 856 . BC 860 General Purpose Transistors Surface mount Si-Epitaxial PlanarTransistors Si-Epitaxial PlanarTransistoren für die Oberflächenmontage PNP Power dissipation – Verlustleistung 1.3 ±0.1 2.5 max 3 Type Code SOT-23 TO-236 Weight approx. – Gewicht ca.	Original	PDF	OT-23 O-236) UL94V-0 856B 858C
Untitled Abstract: No abstract text available Text: BC 846 . BC 850 General Purpose Transistors Surface mount Si-Epitaxial PlanarTransistors Si-Epitaxial PlanarTransistoren für die Oberflächenmontage NPN NPN Power dissipation – Verlustleistung Plastic case Kunststoffgehäuse 1.1 2.9 ±0.1 0.4 1.3 ±0.1	Original	PDF	OT-23 O-236) UL94V-0
H12E Abstract: No abstract text available Text: BC 857BL3, BC 858BL3 PNP Silicon AF Transistors Preliminary data For AF input stages and driver applications 3 High current gain Low collector-emitter saturation voltage 1 Complementary types: BC 847BL3, 2 BC 848BL3 NPN Type Marking Pin Configuration	Original	PDF	857BL3, 858BL3 847BL3, 848BL3 857BL3 H12E
transistor Bc 580 Abstract: TRANSISTOR BC 450 pnp transistor BC 660 Text: BC 847BL3, BC 848BL3 NPN Silicon AF Transistor Preliminary data For AF input stage and driver applications 3 High current gain Low collector-emitter saturation voltage 1 complementary types: BC 857BL3, 2 BC 858BL3 PNP Type Marking Pin Configuration	Original	PDF	847BL3, 848BL3 857BL3, 858BL3 847BL3 transistor Bc 580 TRANSISTOR BC 450 pnp transistor BC 660
857T Abstract: 857BT Text: BC 857T PNP Silicon AF Transistor 3 For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Complementary types: BC 847 .T 2 1 Type Marking Pin Configuration BC 857AT 3Es 1=B 2=E 3=C SC-75 BC 857BT 3Fs	Original	PDF	VPS05996 857AT 857BT SC-75 SC-75 EHP00381 EHP00380 Apr-20-2000 EHP00382 EHP00379 857T 857BT
857T Abstract: BC857AT BC857BT SC-75 Text: BC 857T PNP Silicon AF Transistor 3 For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Complementary types: BC 847 .T 2 1 Type Marking Pin Configuration BC 857AT 3Es 1=B 2=E 3=C SC-75 BC 857BT 3Fs	Original	PDF	857AT SC-75 857BT VPS05996 EHP00381 EHP00380 Nov-03-1999 EHP00382 EHP00379 857T BC857AT BC857BT SC-75
ZO 109 Abstract: BC 107 BC109 bc107 bc 109 BC108 bc 108 zo 107 X10-4 bc 230 Text: BC 107 BC 108 BC 109 SILICON PLANAR NPN LOW NOISE GENERAL PURPOSE AUDIO AMPLIFIERS The BC107, BC 108 and ESC 109 are silico n planar epitaxial NPN transistors in TO-18 metal case. They are suitable fo r use in driver stages, low noise input stages and signal processing circ u its of television receivers.	OCR Scan	PDF	BC109 BC177, BC178 BC179. ZO 109 BC 107 bc107 bc 109 BC108 bc 108 zo 107 X10-4 bc 230
BC478 Abstract: BC479 BC 195 TRANSISTORS BC477 Text: BC 477 BC 478 BC 479 SILICON P L A N A R P N P LOW NOISE GENERAL PURPOSE AUDIO AMPLIFIERS The BC477, BC 478 and BC479 are silicon planar epitaxial P N P transistors in TO-18 metal case. The B C 477 is a high voltage type designed for use in audio amplifiers or driver	OCR Scan	PDF	BC479 BC478 BC 195 TRANSISTORS BC477

sot-23 MARKING CODE 1Gs Abstract: bc 846 BC850 BC846 Text: SIEMENS NPN Silicon AF Transistors BC 846 . BC 850 Features • • • • • For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Low noise between 30 Hz and 15 kHz Complementary types: BC 856, BC 857,	OCR Scan	PDF	Q62702-C1772 Q62702-C1746 Q62702-C1884 Q62702-C1687 Q62702-C1715 Q62702-C1741 Q62702-C1704 Q62702-C1506 Q62702-C1727 Q62702-C1713 sot-23 MARKING CODE 1Gs bc 846 BC850 BC846
TRANSISTOR BC 416 b pnp Abstract: TRANSISTOR BC 415 TRANSISTOR BC 416 b TRANSISTOR BC 415 b pnp BC 104 transistor bc416 TFK 802 tfk 416 TFK 110 TRANSISTOR BC 560 Text: BC 415 • BC 416 Silizium-PNP-Epitaxial-Planar NF-Transistoren Silicon PN P Epitaxial Planar A F Transistors Anwendungen: Rauscharme Vorstufen Applications: Low noise pre stages Features: Besondere Merkmale: • Rauschmaß < 2 dB • Noise figure < 2 dB • In Gruppen sortiert	OCR Scan	PDF
BC 418 Abstract: bc415b ssv 620 BC416A bc415a bc415 bc415c 416b IC 415 ms 415 Text: *BC 415 BC 416 PNP SILICON TRANSISTORS, EPITA X IA L PLANAR TRANSISTORS PNP S ILIC IU M , PLA N A R E P IT A X IA U X % Preferred device D is p o s itif recommandé The BC 415 and BC 416 are very low noise transistors intended for input stages in audio ^ frequency amplifiers.	OCR Scan	PDF	CB-76 BC 418 bc415b ssv 620 BC416A bc415a bc415 bc415c 416b IC 415 ms 415
kc 3229 Abstract: BC 477 G3229 BC 195 TRANSISTORS BC477 G-323 G-3229 BC479 g323 Text: BC 477 BC 478 BC 479 SILICON PLANAR PNP LOW NOISE GENERAL PURPOSE AUDIO AMPLIFIERS The BC 477, BC 478 and BC 479 are silicon planar epitaxial PNP transistors in TO-18 metal case. The BC 477 is a high voltage type designed fo r use in audio am plifiers or driver	OCR Scan	PDF	BC477, G-3229 G-322S G-323; kc 3229 BC 477 G3229 BC 195 TRANSISTORS BC477 G-323 G-3229 BC479 g323
transistor bc 144 Abstract: TRANSISTOR Text: SIEMENS NPN Silicon AF Transistor • • • • BC 368 High current gain High collector current Low collector-emitter saturation voltage Complementary type: BC 369 PNP Type Marking Ordering Code BC 368 - C62702-C747 PinCoinfigurat ion 1 2 3 E C Package1)	OCR Scan	PDF	C62702-C747 flS35fc D12D515 023SbGS Q15051L transistor bc 144 TRANSISTOR
transistor BC 549 Abstract: transistor BC 550 TRANSISTOR BC 550 c TRANSISTOR BC 550 b TFK BC BC549 BC550 TRANSISTOR BC 135 BE550 TRANSISTOR BC 620 Text: BC 549 - BC 550 Silizium-NPN-Epitaxial-Planar-NF-Transistoren Silicon NPN Epitaxial Planar AF Transistors Anwendung: Rauscharme V orstufen Application: Low noise prestages Besondere Merkmale: Features: • Verlustleistung 500 mW • Power dissipation 500 m W	OCR Scan	PDF
bc 339 Abstract: bc560 bc558c cbc560 bc557 bc560c ic 556 BC556A AMI siemens BC557B Text: SIE D SIEM ENS • fl235b05 O O m b l b ÔTb « S I E G SIEMENS AKTIENGESELLSCHAF T v fl- Z l PNP Silicon AF Transistors • • • • BC 556 . BC560 High current gain Low collector-emitter saturation voltage Low noise between 30 Hz and 15 kHz Complementary types: BC 546, BC 547,	OCR Scan	PDF	fl235b05 BC560 Q62702-C692 Q62702-C692-V1 Q62702-C692-V2 Q62702-C693 Q62702-C693-V1 Q62702-C693-V2 Q62702-C694 Q62702-C694-V1 bc 339 bc560 bc558c cbc560 bc557 bc560c ic 556 BC556A AMI siemens BC557B
Untitled Abstract: No abstract text available Text: SIEMENS PNP Silicon AF Transistors BC 856W . BC 860W Features • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Low noise between 30 Hz and 15 kHz • Complementary types: BC 847W, BC 848W,	OCR Scan	PDF	Q62702-C2335 Q62702-C2292 Q62702-C2293 Q62702-C2294 Q62702-C2295 Q62702-C2296 Q62702-C2297 Q62702-C2298 Q62702-C2299 Q62702-C2300
BC 511 Abstract: Q62702-C2295 MARKING 3FS Text: SIEMENS PNP Silicon A F Transistors BC 856W . BC 860W Features • • • • • For A F input stages and driver applications High current gain Low collector-emitter saturation voltage Low noise between 30 Hz and 15 kHz Complementary types: BC 847W, B C 848W,	OCR Scan	PDF	Q62702-C2335 Q62702-C2292 Q62702-C2293 Q62702-C2294 Q62702-C2295 Q62702-C2296 Q62702-C2297 Q62702-C2298 Q62702-C2299 Q62702-C2300 BC 511 MARKING 3FS
transistor af 178 Abstract: bc 162 transistor TRANSISTOR BC 157 BC179 BC179 transistor bc 106 transistor TO-18 BC-177 pnp transistor Q62702-C141 BG177 bc 103 transistor Text: 2SC ì> • 023SbOS O D Q m i S 7 H S I E 6 — ¿p c xjtLL^ D 'y * <Ky PNP Silicon Transistors * jO " BC 177 -SIEMENS AKTIENGESELLSCHAF - BC179 BC 177, BC 178, and BC 179 are epitaxial PNP silicon planar transistors in TO 18 case 18 A 3 DIN 41876 . The collector is electrically connected to the case. The transistors are	OCR Scan	PDF	23SbOS -BC179 Q62702-C684 Q62702-C141 Q62702-C142 Q62702-C685 Q62702-C153 Q62702-C154 Q62702-C155 BC1791Â transistor af 178 bc 162 transistor TRANSISTOR BC 157 BC179 BC179 transistor bc 106 transistor TO-18 BC-177 pnp transistor Q62702-C141 BG177 bc 103 transistor

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BC 104 TRANSISTOR Search Results

BC 104 TRANSISTOR Result Highlights (5)

BC 104 TRANSISTOR Datasheets Context Search

transistors BC 557C

ic 546

BC860W

Untitled

transistors BC 23

BC 620

856B

Untitled

H12E

transistor Bc 580

857T

857T

ZO 109

BC478

sot-23 MARKING CODE 1Gs

TRANSISTOR BC 416 b pnp

BC 418

kc 3229

transistor bc 144

transistor BC 549

bc 339

Untitled

BC 511

transistor af 178