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    BAR90 Price and Stock

    Infineon Technologies AG BAR9002ELE6327XTMA1

    RF DIODE PIN 80V 250MW TSLP-2-19
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    DigiKey BAR9002ELE6327XTMA1 Reel 210,000 15,000
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    Mouser Electronics BAR9002ELE6327XTMA1 21,975
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    Verical BAR9002ELE6327XTMA1 15,000 457
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    Newark BAR9002ELE6327XTMA1 Cut Tape 7,556 5
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    Chip1Stop BAR9002ELE6327XTMA1 Cut Tape 15,000
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    Infineon Technologies AG BAR9002ELSE6327XTSA1

    RF DIODE PIN 80V 250MW TSSLP-2
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    DigiKey BAR9002ELSE6327XTSA1 Digi-Reel 30,677 1
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    BAR9002ELSE6327XTSA1 Cut Tape 30,677 1
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    Mouser Electronics BAR9002ELSE6327XTSA1 8,700
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    Verical BAR9002ELSE6327XTSA1 30,000 6,123
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    BAR9002ELSE6327XTSA1 15,150 502
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    Arrow Electronics BAR9002ELSE6327XTSA1 Cut Strips 1 26 Weeks 1
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    Newark BAR9002ELSE6327XTSA1 Cut Tape 11,365 5
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    Rochester Electronics BAR9002ELSE6327XTSA1 30,000 1
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    Chip1Stop BAR9002ELSE6327XTSA1 Cut Tape 15,150
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    EBV Elektronik BAR9002ELSE6327XTSA1 27 Weeks 15,000
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    Infineon Technologies AG BAR-90-07LRH-E6327

    RF DIODE PIN 80V 250MW TSLP-4-7
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    DigiKey BAR-90-07LRH-E6327 Reel 15,000
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    Infineon Technologies AG BAR-90-098L4-E6327

    RF DIODE PIN 80V 250MW TSLP-4-7
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    DigiKey BAR-90-098L4-E6327 Reel 15,000
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    Infineon Technologies AG BAR-90-081LS-E6327

    RF DIODE PIN 80V 150MW TSSLP-8-1
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    DigiKey BAR-90-081LS-E6327 Reel 15,000
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    Find more BAR90 price and stock on Findchips.com

    BAR90 Datasheets (25)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    BAR9002ELE6327XTMA1 Infineon Technologies RF Diodes, Discrete Semiconductor Products, DIODE PIN SGL 80V 100MA TSLP-2-7 Original PDF
    BAR9002ELSE6327XTSA1 Infineon Technologies Discrete Semiconductor Products - Diodes - RF - DIODE PIN SGL 80V 100MA TSSLP-2 Original PDF
    BAR90-02L Infineon Technologies Diodes for switching applications up to 3GHz Original PDF
    BAR9002LE6327 Infineon Technologies Diode, General Purpose, Switching, PIN Diodes, Tape and Reel Original PDF
    BAR90-02LRH Infineon Technologies Antenna Switch; Package: PG-TSLP-2; IF (max): 100.0 mA; CT (max): 0.35 pF; rF (typ): 0.8 Ohm; Trr (typ): 750.0 ns; Configuration: Single; Original PDF
    BAR90-02LRHE6327 Infineon Technologies RF Diodes, Discrete Semiconductor Products, DIODE PIN SGL 80V 100MA TSLP-2-7 Original PDF
    BAR9002LRHE6327XTSA1 Infineon Technologies Discrete Semiconductor Products - Diodes - RF - DIODE PIN SGL 80V 100MA TSLP-2-7 Original PDF
    BAR90-02LS Infineon Technologies Antenna Switch; Package: PG-TSSLP-2; IF (max): 100.0 mA; CT (max): 0.35 pF; rF (typ): 0.8 Ohm; Trr (typ): 750.0 ns; Configuration: Single; Original PDF
    BAR90-02LSE6327 Infineon Technologies RF Diodes, Discrete Semiconductor Products, DIODE PIN SGL 80V 100MA TSSLP-2 Original PDF
    BAR9002LSE6327XTSA1 Infineon Technologies Discrete Semiconductor Products - Diodes - RF - DIODE PIN SGL 80V 100MA TSSLP-2 Original PDF
    BAR90-07L4 Infineon Technologies Diodes for switching applications up to 3GHz Original PDF
    BAR9007L4E6327 Infineon Technologies Diode, General Purpose, Switching, PIN Diodes, Tape and Reel Original PDF
    BAR 90-07LRH E6327 Infineon Technologies Discrete Semiconductor Products - Diodes - RF - DIODE PIN PAR 80V 100MA TSLP-4-7 Original PDF
    BAR90-07LRHE6327 Infineon Technologies RF Diodes, Discrete Semiconductor Products, DIODE PIN PAR 80V 100MA TSLP-4-7 Original PDF
    BAR90-081LS Infineon Technologies Antenna Switch; Package: PG-TSSLP-8; IF (max): 100.0 mA; CT (max): 0.35 pF; rF (typ): 0.8 Ohm; Trr (typ): 750.0 ns; Configuration: Single; Original PDF
    BAR90-081LSE6327 Infineon Technologies RF Diodes, Discrete Semiconductor Products, DIODE ARRAY 80V 100MA TSSLP-8 Original PDF
    BAR 90-081LS E6327 Infineon Technologies Discrete Semiconductor Products - Diodes - RF - DIODE ARRAY 80V 100MA TSSLP-8 Original PDF
    BAR 90-098L4 E6327 Infineon Technologies Discrete Semiconductor Products - Diodes - RF - DIODE PIN ANTI 80V 100MA TSLP4-4 Original PDF
    BAR90-098L4E6327 Infineon Technologies RF Diodes, Discrete Semiconductor Products, DIODE PIN ANTI 80V 100MA TSLP4-4 Original PDF
    BAR90-098LRH Infineon Technologies Antenna Switch; Package: PG-TSLP-4; IF (max): 100.0 mA; CT (max): 0.35 pF; rF (typ): 0.8 Ohm; Trr (typ): 750.0 ns; Configuration: Dual; Original PDF

    BAR90 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    BAR90-081LS

    Abstract: marking WM BAR90
    Text: BAR90-081LS Silicon Trench PIN Diode Array • Optimized for low bias current antenna switches in hand held applications • Very low capacitance at zero volt reverse bias at frequencies above 1GHz typ. 0.19 pF • Low forward resistance (typ. 1.3 Ω @ IF = 3 mA)


    Original     		BAR90-081LS BAR90-081LS marking WM BAR90 PDF

    Untitled

    Abstract: No abstract text available
    Text: BAR90. Silicon Deep Trench PIN Diodes • Optimized for low bias current antenna switches in hand held applications • Very low capacitance at zero volt reverse bias at frequencies above 1GHz typ. 0.19 pF • Low forward resistance (typ. 1.3 Ω @ I F = 3 mA)


    Original     		BAR90. BAR90-02LRH BAR90-02LS BAR90-098LRH PDF

    Untitled

    Abstract: No abstract text available
    Text: BAR90. Silicon Deep Trench PIN Diodes • Optimized for low bias current antenna switches in hand held applications • Very low capacitance at zero volt reverse bias at frequencies above 1GHz typ. 0.19 pF • Low forward resistance (typ. 1.3 Ω @ IF = 3 mA)


    Original     		BAR90. BAR90-02LRH BAR90-02LS BAR90-07LRH BAR90-098LRH BAR90-099LRH BAR90-02LRH* BAR90-02LS* BAR90-07LRH* BAR90-098LRH* PDF

    BAR90-02EL

    Abstract: No abstract text available
    Text: BAR90. Silicon Deep Trench PIN Diodes • Optimized for low bias current antenna switches in hand held applications • Very low capacitance at zero volt reverse bias at frequencies above 1GHz typ. 0.19 pF • Low forward resistance (typ. 1.3 Ω @ I F = 3 mA)


    Original     		BAR90. BAR90-02EL BAR90-02ELS BAR90-098LRH TSLP-2-19 BAR90-02EL PDF

    BAR90-07LRH

    Abstract: BAR90 BAR90-02LRH BAR90-02LS BAR90-098LRH BAR90-099LRH
    Text: BAR90. Silicon Deep Trench PIN Diodes • Optimized for low bias current antenna switches in hand held applications • Very low capacitance at zero volt reverse bias at frequencies above 1GHz typ. 0.19 pF • Low forward resistance (typ. 1.3 Ω @ IF = 3 mA)


    Original     		BAR90. BAR90-02LRH BAR90-02LS BAR90-07LRH BAR90-098LRH BAR90-099LRH BAR90-07LRH BAR90 BAR90-02LRH BAR90-02LS BAR90-098LRH BAR90-099LRH PDF

    TSLP

    Abstract: BAR90 BAR90-02L BAR90-02LRH BAR90-07L4 BAR90-07LRH BAR90-098LRH BAR90-099L4 BAR90-099LRH TSLP 8
    Text: BAR90. Silicon Deep Trench PIN Diodes • Optimized for low bias current antenna switches in hand held applications • Very low capacitance at zero volt reverse bias at frequencies above 1GHz typ. 0.19pF • Low forward resistance (typ. 1.3Ω @ IF = 3mA)


    Original     		BAR90. BAR90-02L BAR90-02LRH BAR90-07L4 BAR90-07LRH BAR90-098L4 BAR90-098LRH BAR90-02L* BAR90-02LRH* BAR90-07L4* TSLP BAR90 BAR90-02L BAR90-02LRH BAR90-07L4 BAR90-07LRH BAR90-098LRH BAR90-099L4 BAR90-099LRH TSLP 8 PDF

    Untitled

    Abstract: No abstract text available
    Text: BAR90. Silicon Deep Trench PIN Diodes • Optimized for low bias current antenna switches in hand held applications • Very low capacitance at zero volt reverse bias at frequencies above 1GHz typ. 0.19 pF • Low forward resistance (typ. 1.3 Ω @ I F = 3 mA)


    Original     		BAR90. BAR90-02LRH BAR90-02LS BAR90-098LRH BAR90-02LS PDF

    BAR90-099LRH

    Abstract: BAR90 BAR90-02L BAR90-02LRH BAR90-07L4 BAR90-07LRH BAR90-099L4 TSLP 8
    Text: BAR90. Silicon Deep Trench PIN Diodes • Optimized for low bias current antenna switches in hand held applications • Very low capacitance at zero volt reverse bias at frequencies above 1GHz typ. 0.19pF • Low forward resistance (typ. 1.3Ω @ IF = 3mA)


    Original     		BAR90. BAR90-02L BAR90-02LRH BAR90-07L4 BAR90-07LRH BAR90-098L4 BAR90-02L* BAR90-02LRH* BAR90-07L4* BAR90-07LRH* BAR90-099LRH BAR90 BAR90-02L BAR90-02LRH BAR90-07L4 BAR90-07LRH BAR90-099L4 TSLP 8 PDF

    TSLP

    Abstract: BAR90-099LRH BAR90-098LRH BAR90 BAR90-02L BAR90-02LRH BAR90-07L4 BAR90-07LRH BAR90-099L4
    Text: BAR90. Silicon Deep Trench PIN Diodes • Optimized for low bias current antenna switches in hand held applications • Very low capacitance at zero volt reverse bias at frequencies above 1GHz typ. 0.19pF • Low forward resistance (typ. 1.3Ω @ IF = 3mA)


    Original     		BAR90. BAR90-02L BAR90-02LRH BAR90-07L4 BAR90-07LRH BAR90-098L4 BAR90-098LRH BAR90-02L* BAR90-02LRH* BAR90-07L4* TSLP BAR90-099LRH BAR90-098LRH BAR90 BAR90-02L BAR90-02LRH BAR90-07L4 BAR90-07LRH BAR90-099L4 PDF

    Untitled

    Abstract: No abstract text available
    Text: BAR90. Silicon Deep Trench PIN Diodes • Optimized for low bias current antenna switches in hand held applications • Very low capacitance at zero volt reverse bias at frequencies above 1GHz typ. 0.19 pF • Low forward resistance (typ. 1.3 Ω @ IF = 3 mA)


    Original     		BAR90. BAR90-02LRH BAR90-02LS BAR90-07LRH BAR90-098LRH BAR90-099LRH BAR90-07LRH BAR90-098LRH PDF

    BAR90

    Abstract: BAR90-02LRH BAR90-02LS BAR90-07LRH BAR90-098LRH TSLP-2-7
    Text: BAR90. Silicon Deep Trench PIN Diodes • Optimized for low bias current antenna switches in hand held applications • Very low capacitance at zero volt reverse bias at frequencies above 1GHz typ. 0.19 pF • Low forward resistance (typ. 1.3 Ω @ IF = 3 mA)


    Original     		BAR90. BAR90-02LRH BAR90-02LS BAR90-098LRH BAR90 BAR90-02LRH BAR90-02LS BAR90-07LRH BAR90-098LRH TSLP-2-7 PDF

    BAR90-07LRH

    Abstract: BAR90-02LRH BAR90-02LS transistor marking pr 04 BAR90 BAR90-098LRH BAR90-099LRH TSLP-2-7 bar90-099
    Text: BAR90. Silicon Deep Trench PIN Diodes • Optimized for low bias current antenna switches in hand held applications • Very low capacitance at zero volt reverse bias at frequencies above 1GHz typ. 0.19 pF • Low forward resistance (typ. 1.3 Ω @ IF = 3 mA)


    Original     		BAR90. BAR90-02LRH BAR90-02LS BAR90-07LRH BAR90-098LRH BAR90-099LRH BAR90-07LRH BAR90-02LRH BAR90-02LS transistor marking pr 04 BAR90 BAR90-098LRH BAR90-099LRH TSLP-2-7 bar90-099 PDF

    Untitled

    Abstract: No abstract text available
    Text: BAR90. Silicon Deep Trench PIN Diodes • Optimized for low bias current antenna switches in hand held applications • Very low capacitance at zero volt reverse bias at frequencies above 1GHz typ. 0.19 pF • Low forward resistance (typ. 1.3 Ω @ I F = 3 mA)


    Original     		BAR90. BAR90-02LRH BAR90-02LS BAR90-098LRH BAR90-02LS PDF

    BAS16

    Abstract: BAS1602W BAS16-02L BAS16-02V BAS16-02W BAS16-03W BAS16-07L4 BAS16S BAS16U BAS16W
    Text: BAS16. Silicon Switching Diode • For high-speed switching applications BAS16 BAS16W BAS16-02L BAS16-02V BAS16-02W BAS16-03W BAS16S BAS16U 6 3 4 5 D 1 1 1 4 D 2 3 D 3 D 1 2 1 2 Type BAS16 BAS16-02L* BAS16-02V BAS16-02W BAS16-03W BAS16-07L4* BAS16S BAS16U


    Original     		BAS16. BAS16 BAS16W BAS16-02L BAS16-02V BAS16-02W BAS16-03W BAS16S BAS16U BAS16 BAS1602W BAS16-02L BAS16-02V BAS16-02W BAS16-03W BAS16-07L4 BAS16S BAS16U BAS16W PDF

    BAT15-02LRH

    Abstract: BAT15-04W BAT15 BAT15-03W BAT15-05W BAT15-099 BAT15-099LRH BAT15-099R RF schottky diode
    Text: BAT15. Silicon Schottky Diodes • Low barrier type for DBS mixer applications up to 12 GHz, phase detectors and modulators • Low noise figure • Pb-free RoHS compliant package 1) • Qualified according AEC Q101 BAT15-02LRH BAT15-03W BAT15-04W BAT15-05W


    Original     		BAT15. BAT15-02LRH BAT15-03W BAT15-04W BAT15-05W BAT15-099 BAT15-099LRH BAT15-099R BAT15-02LRH BAT15-04W BAT15 BAT15-03W BAT15-05W BAT15-099 BAT15-099LRH BAT15-099R RF schottky diode PDF

    ESD0P2RF-02LS

    Abstract: ESD0P2RF-02LRH BAR90-02LRH IEC61000-4-4 C125T-A
    Text: ESD0P2RF. Bi-directional Ultra Low Capacitance TVS Diode • ESD / transient protection of RF signal lines according to: IEC61000-4-2 ESD : ±20kV (contact) IEC61000-4-4 (EFT): 40 A (5 / 50 ns) IEC61000-4-5 (Surge): 3 A (8 / 20 µs) • Extremely small form factor down to


    Original     		IEC61000-4-2 IEC61000-4-4 IEC61000-4-5 ESD0P2RF-02LRH ESD0P2RF-02LS ESD0P2RF-02LS ESD0P2RF-02LRH BAR90-02LRH IEC61000-4-4 C125T-A PDF

    bat62-03w

    Abstract: BAT62 BAT62-02L BAT62-02W BAT62-07L4 BAT62-07W BAT62-09S SCD80
    Text: BAT62. Silicon Schottky Diode • Low barrier diode for detectors up to GHz frequencies • Pb-free RoHS compliant package 1) • Qualified according AEC Q101 BAT62 " BAT62-02W BAT62-03W BAT62-07W ! ,  " BAT62-09S $ ! ,    , ,  , 1   " # , BAT62-02L


    Original     		BAT62. BAT62 BAT62-02W BAT62-03W BAT62-07W BAT62-09S BAT62-02L BAT62-02LS BAT62-07L4 bat62-03w BAT62 BAT62-02L BAT62-02W BAT62-07L4 BAT62-07W BAT62-09S SCD80 PDF

    BAR88-07LRH

    Abstract: BAR88-099LRH BAR88 BAR88-02LRH BAR88-02V BAR88-098LRH SC79 TSLP
    Text: BAR88. Silicon PIN Diode • Optimized for low current antenna switches in hand held applications • Very low forward resistance typ. 1.5 Ω @ I F = 1 mA • Low capacitance at zero volt reverse bias at frequencies above 1 GHz (typ. 0.28 pF) • Very low signal distortion


    Original     		BAR88. BAR88-02LRH BAR88-02V BAR88-07LRH BAR88-098LRH BAR88-099LRH BAR88-07LRH BAR88-099LRH BAR88 BAR88-02LRH BAR88-02V BAR88-098LRH SC79 TSLP PDF

    Untitled

    Abstract: No abstract text available
    Text: BAS4002S-02LRH Low VF Schottky Diode • Reverse voltage: 40 V • Forward current: 0.2 A • Low forward voltage and smallest package form factor 1.0 x 0.6 x < 0.4 mm for mobile phone battery charger application • Pb-free (RoHS compliant) package BAS4002S-02LRH


    Original     		BAS4002S-02LRH TSLP-2-17 PDF

    Untitled

    Abstract: No abstract text available
    Text: ESD0P4RFL RF ESD Protection Diodes • ESD protection of RF antenna / interfaces or ultra high speed data lines acc. to: IEC61000-4-2 ESD : ± 15 KV (air / contact) IEC61000-4-4 (EPT): 40 A (5/50 ns) IEC61000-4-5 (surge): 5 A (8/20 µs) • Very low line capacitance: 0.4 pF @ 1 GHz


    Original     		IEC61000-4-2 IEC61000-4-4 IEC61000-4-5 PDF

    MARKING E4 "Pin Diode"

    Abstract: No abstract text available
    Text: ESD0P4RFL RF ESD Protection Diodes • ESD protection of RF antenna / interfaces or ultra high speed data lines acc. to: IEC61000-4-2 ESD : ± 15 KV (air / contact) IEC61000-4-4 (EPT): 40 A (5/50 ns) IEC61000-4-5 (surge): 5 A (8/20 µs) • Very low line capacitance: 0.4 pF @ 1 GHz


    Original     		IEC61000-4-2 IEC61000-4-4 IEC61000-4-5 MARKING E4 "Pin Diode" PDF

    marking 5B

    Abstract: No abstract text available
    Text: BAS3005B. Medium Power AF Schottky Diode • Forward current: 0.5 A • Reverse voltage: 30 V • Low capacitance, low reverse current • For high efficiency DC/DC conversion, fast switching, protecting and clamping applications • Pb-free RoHS compliant package


    Original     		BAS3005B. BAS3005B-02LRH* BAS3005B-02V TSLP-2-17 marking 5B PDF

    Untitled

    Abstract: No abstract text available
    Text: BAR89. Silicon PIN Diode • Optimized for antenna switches in hand held applications • Very low capacitance at zero volts reverse bias at frequencies above 1GHz typ. 0.19 pF • Low forward resistance (typ. 0.8Ω @ IF = 10mA) • Very low signal distortion


    Original     		BAR89. BAR89-02LRH PDF

    DIN 6784

    Abstract: marking code TS Diode Mark sot23 4x marking code 76s BAS170W BAS70-02L BAS70-02W BAS70-04S MARKING 74s marking 77s
    Text: BAS70. / BAS170W Silicon Schottky Diode • General-purpose diode for high-speed switching • Circuit protection • Voltage clamping • High-level detecting and mixing BAS170W BAS70-02L BAS70-02W BAS70 BAS70-04 BAS70-04W 3 BAS70-04S 6 3 4 5 D 3 1 2 D 1


    Original     		BAS70. BAS170W BAS170W BAS70-02L BAS70-02W BAS70 BAS70-04 BAS70-04W BAS70-04S BAS70-05 DIN 6784 marking code TS Diode Mark sot23 4x marking code 76s BAS70-02W BAS70-04S MARKING 74s marking 77s PDF