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    BA 10 G 1R Search Results

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    BA 10 G 1R Price and Stock

    TDK Corporation CGA2B2C0G1H1R5C050BA

    Multilayer Ceramic Capacitors MLCC - SMD/SMT CGA 0402 50V 1.5pF C0G 0.25pF AEC-Q200
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics CGA2B2C0G1H1R5C050BA 34,194
    • 1 $0.1
    • 10 $0.029
    • 100 $0.018
    • 1000 $0.015
    • 10000 $0.009
    		Buy Now

    TAIYO YUDEN MBASU105SCG1R8BFNA01

    Multilayer Ceramic Capacitors MLCC - SMD/SMT 50V 1.8pF C0G 0402 0.55T Telecomm 2Term
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics MBASU105SCG1R8BFNA01 19,960
    • 1 $0.1
    • 10 $0.039
    • 100 $0.019
    • 1000 $0.012
    • 10000 $0.01
    		Buy Now

    TAIYO YUDEN MBASU105SCG1R5BFNA01

    Multilayer Ceramic Capacitors MLCC - SMD/SMT 50V 1.5pF C0G 0402 0.55T Telecomm 2Term
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics MBASU105SCG1R5BFNA01 19,885
    • 1 $0.1
    • 10 $0.039
    • 100 $0.019
    • 1000 $0.012
    • 10000 $0.01
    		Buy Now

    TAIYO YUDEN MBASU105SCG1R2CFNA01

    Multilayer Ceramic Capacitors MLCC - SMD/SMT 50V 1.2pF C0G 0402 0.55T Telecomm 2Term
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics MBASU105SCG1R2CFNA01 19,868
    • 1 $0.1
    • 10 $0.035
    • 100 $0.018
    • 1000 $0.011
    • 10000 $0.009
    		Buy Now

    TDK Corporation CGA1A2C0G1E1R5C030BA

    Multilayer Ceramic Capacitors MLCC - SMD/SMT CGA 0201 25V 1.5pF C0G 0.25pF AEC-Q200
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics CGA1A2C0G1E1R5C030BA 18,918
    • 1 $0.1
    • 10 $0.036
    • 100 $0.022
    • 1000 $0.022
    • 10000 $0.018
    		Buy Now
    Find more BA 10 G 1R price and stock on Findchips.com

    BA 10 G 1R Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    25C20

    Abstract: C541U A65 SMD BDP 281 od3 tube datasheet PSB 21150 F pin rd-58 S44 SMD sei smd resistors smd code aux n ba
    Text: D at a S h ee t, D S 1, O ct . 20 01 SIUC-BA S in gl e C hi p I S D N U S B Co nt ro ll er - Basic PSB 2155 Version 1.3 Wired C o m m u n i ca t i o n s N e v e r s t o p t h i n k i n g . Edition 2001-10-01 Published by Infineon Technologies AG, St.-Martin-Strasse 53,


    Original     		PDF D-81541 25C20 C541U A65 SMD BDP 281 od3 tube datasheet PSB 21150 F pin rd-58 S44 SMD sei smd resistors smd code aux n ba

    W9968CF

    Abstract: No abstract text available
    Text: W9968CF JPEG USB DUAL MODE CAMERA CHIP W9968CF JPEG USB Dual Mode Camera Chip Publication Release Date: May 1999 -1Revision A2 W9968CF Revision History Revision Issue Date Comments A1 April, 1998 Formal release. A2 May, 1999 Supports USB Spec. Rev. 1.1. Changed bcdUSB and bcdDevice


    Original     		PDF W9968CF 0x0100 0x0110. W9968CF

    Untitled

    Abstract: No abstract text available
    Text: COPYRIGHT TRP connector ALL RIGHTS REVISIONS RESERVED p LTR DESCRIPTION c MATER I ALS : C T 1r H O L S I L G SL L RA ç c um 9 PHOR I 8APR2QI 3 RL APVD KZ NG o BRONZE um um 9 LL RGB M I N BOARLS: DWN c C um LOGO CHANGE LLAMMAL I N S E M I - BR um o DATE


    OCR Scan     		PDF S9HG70ET

    531-40046

    Abstract: No abstract text available
    Text: R E V 1S I O N S 5 3 1 - 40046-3 NOTES: DRAW ING I . M A T E R I A L S AND F I N I S H E S : BODY = BR A S S , T I N P L A T E D CONTACT - PHOSPHOR BRONZE, I N S U L A T OR = P OL YP R OP Y L E NE TH 1RD ANGLE REV NO. PROJ. D E S C R 1P T I O N A <§ > B T I N PLATED


    OCR Scan     		PDF

    Philips 2222 021 17222

    Abstract: 030 36109 philips 030 36229 Philips 021 LL capacitors Philips 2222 015 35689 capacitors Philips 031 aluminum electrolytic capacitors 2222 015 16229 38478 philips 031 18229 2222 042 PHILIPS
    Text: Aluminum Electrolytic Capacitors Axial, Standard N . Vs, AS 030,031 j Axial Standard Miniature Axial Smallest Diameter U s efu l life S. Ñ A S M 021/ASD 117 S e rie s SN, NN, ASH 041,042,043 ASH-ELB 042,043 Axial Stan d a rd Axial Standard High Voltage Axial Standard High Voltage


    OCR Scan     		PDF 021/ASD 18x40 PA01-A Philips 2222 021 17222 030 36109 philips 030 36229 Philips 021 LL capacitors Philips 2222 015 35689 capacitors Philips 031 aluminum electrolytic capacitors 2222 015 16229 38478 philips 031 18229 2222 042 PHILIPS

    Scans-048

    Abstract: uebertrager aus dma he no Leipzig U e b e r s i c h t von g e b r a e u c h l ichvn englIschsprachlgen Abkuerzungen aus dar Unterhait rasistor
    Text: SERVICE-M ITTEILUNGEN V E B IN O U 8 T R I EVER T R IE B R U N D F U N K U N O F E R N S E H E N i . \ AUSGABE: 1 , i r :> 1r a d i o - t e l e v i s i o n \ 1986 S e it « 6 - 8 1 - 1 2 A b k u e r z u n g s v e r z e l e h n I • E n g l i s c h <— > D e u t s c h


    OCR Scan     		PDF III/18/379 Scans-048 uebertrager aus dma he no Leipzig U e b e r s i c h t von g e b r a e u c h l ichvn englIschsprachlgen Abkuerzungen aus dar Unterhait rasistor

    ba3920

    Abstract: BA 3922 BA3928 BA3930 9702FS 9329l BA3922 ba 243 rf 4S584 LZ 99
    Text: IUHDU I l ZLV ZLl 8dOS/8dia BdOS ° 4 - —V Wl 951 —V ¥ P09fr 8SM-dOS 8Sdia (P00e)«dl0->IS £. _ ± <, 0\/ 0z zv 9£ 9‘0 9‘0 (A) mmm* (A) i/ a m # 9 6* 96> 9 9 (AlBfcCf m (A) 9 001 8 x >18 OV 9 001 8 x >12 (VUi)&^ia (A) 3 ra & * (su)xbw 01 (V '0 # a » £


    OCR Scan     		PDF P09fr TI0L-dVS939Ha 093J8 3x29x15 2x29x15 32X29X15 6149LS 6161N BA9700A/AF 9702FS ba3920 BA 3922 BA3928 BA3930 9329l BA3922 ba 243 rf 4S584 LZ 99

    Ba 33 bco

    Abstract: No abstract text available
    Text: Direct RDRAM RAMBUS TM 32/36-M bit 256K x16/18x8d ADVANCE INFORMATION O verview The R am bus Direct RDRAM is a general p u rp o se high-perform ance m em ory device suitable for use in a broad range of applications including com puter mem ory, graphics, video, an d any other application


    OCR Scan     		PDF 32/36-M x16/18x8d) /36-M 600MHz Ba 33 bco

    Untitled

    Abstract: No abstract text available
    Text: Direct RDRAM RAMBUS ADVANCE INFORMATION TM 128/144-Mbit 256Kx16/18x32s O verview The R am bus Direct RDRAM is a general p u rp o se high-perform ance m em ory device suitable for use in a broad range of applications including com puter mem ory, graphics, video, an d any other application


    OCR Scan     		PDF 128/144-Mbit 256Kx16/18x32s) 128/144-M 600MHz DL0059-00

    NT56V1680A0T

    Abstract: nt56v168
    Text: Preliminary 16 MEG: x4 ,x8 SDRAM NT56V1680A0T NT56V1640A0T Data Sheet 8012-90010 First Revision, April 1998 Changes may be made without notice T Preliminary 16 MEG: x4 ,x8 SDRAM DESCRIPTION The NT56V1680A0T is a 2-bankxl,048,576-wordx8-bit synchronous dynamic RAM and the


    OCR Scan     		PDF NT56V1680A0T NT56V1640A0T 576-wordx8-bit NT56V1640A0T 152-wordx4-bit nt56v168

    D4580

    Abstract: direct rdram rambus TI 45-600
    Text: Direct RDRAM RAMBUS ADVANCE INFORMATION TM 256/288-Mbit 512Kx16/18x32s O verview The R am bus Direct RDRAM is a general p u rp o se high-perform ance m em ory device suitable for use in a broad range of applications including com puter mem ory, graphics, video, an d any other application


    OCR Scan     		PDF 256/288-Mbit 512Kx16/18x32s) 256/288-M 600MHz DL0060-00 D4580 direct rdram rambus TI 45-600

    M5M4V16S30DTP

    Abstract: M5M4V16S40 M5M4V16s30
    Text: SDRAM Rev. 1.03E . «* „ 16M Synchronous DRAM „„ M5M4V1 6S20DTP-7,-8A,-8,-1 0 (2-BANK x 2097152-W ORD x 4-BIT) P relim inary M 5 M 4 V 1 6 S 3 0 D T P - 7 , - 8 A , - 8 , - 1 0 (2-BANK x 1048576-WORD x 8-BIT) M IT S U B IS H I L S Is M 5 M 4 V 1 6 S 4 0 D T P - 7 , - 8 A , - 8 , - 1 0 (2 - b a n k x 5 2 4 2 8 8 - w o r d x 16 -b it)


    OCR Scan     		PDF 6S20DTP-7 097152-W 1048576-WORD M5M4V16S20DTP 152-word M5M4V16S30DTP 576-word M5M4V16S40DTP 288-word 16-bit. M5M4V16S40 M5M4V16s30

    TC59RM716GB

    Abstract: 9T20T
    Text: TOSHIBA TEN TA TIVE T O S H IB A M O S DIGITAL IN T E G R A T E D C IR C U IT TC59RM716GB-8 SILIC O N M O N O LIT H IC Overview T he D irect R am bus D R A M D irect R D R A M ™ is a general-purpose high perform ance m em ory device suitable for use in a broad ra n g e of applications including com puter memory, graphics, video a n d any o th er applications


    OCR Scan     		PDF TC59RM716GB-8 128-M 800-M TEST77 TEST78 P-BGA54-1312-1 TC59RM716GB 9T20T

    Untitled

    Abstract: No abstract text available
    Text: O K I Semiconductor MSM56 V16160 2-Bank x 524,288-Word x 16-Bit SYNCHRONOUS DYNAMIC RAM DESCRIPTION The MSM56V16160 is a 2-bank x 524,288-word x 16-bit synchronous dynamic RAM, fabricated in OKI's CMOS silicon gate process technology. The device operates at 3.3 V. The inputs and


    OCR Scan     		PDF MSM56 V16160 288-Word 16-Bit MSM56V16160 cycles/64

    Untitled

    Abstract: No abstract text available
    Text: P r e lim in a r y ^ GM72V28841 AT/ALT L G S e m i c o n € o » 5l t c i ^ 4,194,304 w o r d x 8 b i t x 4 b a n k SYNCHRONOUS DYNAMIC RAM Description The GM72V28841 AT/ALT is a synchronous dynamic random access memory comprised of 134,217,728 memory cells and logic


    OCR Scan     		PDF GM72V28841 PC100 GM72V28841AT/ALT GM72V28841AT/ALT TTP-54D)

    Untitled

    Abstract: No abstract text available
    Text: CMOS SyncBiFIFO 2 5 6 x 1 8 x 2 and 5 1 2 x 1 8 x 2 p o w e r b id ire ctio n a l F irst-In. F irst-O u t F IF O m e m o rie s, w ith syn ch ro n o u s in te rfa ce fo r fa st read a n d w rite c ycle tim e s. T h e S y n c B iF IF O IM is a da ta b u ffe r th a t can sto re o r re trieve


    OCR Scan     		PDF IDT72605 IDT72615 T72605/ID T72615 68-pin 64-pin

    diode BA 159

    Abstract: in4937
    Text: BA 157.BA 159 Fast Silicon Rectifier Schnelle Silizium Gleichrichter Nominal current Nennstrom 1A Repetitive peak reverse voltage Periodische Spitzensperrspannung 400. 1000 V Plastic case Kunststoffgehäuse DO-41 Weight approx. Gewicht ca. —f6 O.E 0.4 g


    OCR Scan     		PDF DO-41 UL94V-0 R0D1RS14 DGG174 diode BA 159 in4937

    nec aa8

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT /¿ P D 4 8 1 1 6 5 0 f o r R e v .E 16 M-BIT SYNCHRONOUS GRAM 256K-WORD BY 32-BIT BY 2-BANK Description The /¿PD4811650 is a synchronous graphics memory SGRAM organized as 262,144 words x 32 bits x 2 banks


    OCR Scan     		PDF 256K-WORD 32-BIT uPD4811650 100-pin nec aa8

    N047

    Abstract: No abstract text available
    Text: MITSUBISHI LSIs O ’d ' X ' MH8S64BALD-6 r 536,870,912-BIT 8,388,6O8-WORD BY 64-BIT Synchronous DYNAMIC RAM s ? eC u - - PRELIMINARY Some of contents are subject to change without notice.


    OCR Scan     		PDF MH8S64BALD-6 912-BIT 64-BIT MH8S64BALD 64-bit 85pin 94pin 10pin 95pin 124pin N047

    gm72v661641ct

    Abstract: 72V661641 GM72V661641 GM72V66441 vero cells 72V661641C 12A13 gm72v661641c
    Text: Preliminary VerO. 1 LG Semicon Co.,Ltd. Description The G M 72V661641C T is a synchronous dynamic random access memory comprised of 67,108,864 memory cells and logics including input and output circuits operating synchronously by refering to the positive edge of the externally provided clock.


    OCR Scan     		PDF 72V661641C GM72V661641CT GM72V661641CT TTP-54D) 72V661641 GM72V661641 GM72V66441 vero cells 12A13 gm72v661641c

    Untitled

    Abstract: No abstract text available
    Text: KM416S1120D CMOS SDRAM 1Mx 16 SDRAM 512 K x 16bit X 2 Banks Synchronous DRAM LVTTL Revision 1.2 March 1999 Samsung Electronics reserves the right to change products or specification without notice. Rev. 1.2 Mar. 1999 ELECTRONiCS KM416S1120D CMOS SDRAM Revision History


    OCR Scan     		PDF KM416S1120D 16bit KM416S1120D-Z 125MHz KM416S1120D-7/8@ 416S1120D-6 416S1120D-7 50-TSOP2-400F

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET_ MOS INTEGRATED CIRCUIT ¿¿PD488448, 488488 128/144 M-bit Direct Rambus DRAM Description The Direct Rambus DRAM Direct RDRAM™ is a general purpose high-performance memory device suitable for use in a broad range of applications including com puter memory, graphics, video, and any other application where


    OCR Scan     		PDF PD488448, JUPD488448 128M-bit PD488488 144M-bit 14072EJ1V0D

    GM72V66441

    Abstract: GM72V66841
    Text: Preliminary VerO. 1 LG Semicon Co.,Ltd. Description The G M 72V66841C T is a synchronous dynamic random access memory comprised of 67,108,864 memory cells and logics including input and output circuits operating synchronously by refering to the positive edge of the externally provided clock.


    OCR Scan     		PDF GM72V66841CT 72V66841C GM72V66841CT TTP-54D) GM72V66441 GM72V66841

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI LSIs O ’d ' \ ' MH16S64PHB-6 r 1,073,741,824-BIT 16,777,216-WORD BY 64-BIT Synchronous DYNAMIC RAM s ? eC u - - PRELIMINARY Some of contents are subject to change without notice.


    OCR Scan     		PDF MH16S64PHB-6 824-BIT 216-WORD 64-BIT MH16S64PHB 64-bit 85pin 94pin 10pin 95pin