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    SK Hynix Inc GM72V66841ET-7K

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    GM72V66841 Datasheets (22)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    GM72V66841 Hynix Semiconductor IC,SDRAM,4X2MX8,CMOS,TSOP,54PIN,PLASTIC Original PDF
    GM72V66841CLT Unknown 2,097,152 WORD x 8 BIT x 4 BANK SYNCHRONOUS DYNAMIC RAM Original PDF
    GM72V66841CLT-10K LG Semicon 2097152 word x 8 bit x 4 bank synchronous dynamic RAM Original PDF
    GM72V66841CLT-7J LG Semicon 2097152 word x 8 bit x 4 bank synchronous dynamic RAM Original PDF
    GM72V66841CLT-7K LG Semicon 2097152 word x 8 bit x 4 bank synchronous dynamic RAM Original PDF
    GM72V66841CLT-8 LG Semicon 2097152 word x 8 bit x 4 bank synchronous dynamic RAM Original PDF
    GM72V66841CT LG Semicon 2,097,152 WORD x 8 BIT x 4 BANK SYNCHRONOUS DYNAMIC RAM Original PDF
    GM72V66841CT-10K LG Semicon 2097152 word x 8 bit x 4 bank synchronous dynamic RAM Original PDF
    GM72V66841CT-7J LG Semicon 2097152 word x 8 bit x 4 bank synchronous dynamic RAM Original PDF
    GM72V66841CT-7K LG Semicon 2097152 word x 8 bit x 4 bank synchronous dynamic RAM Original PDF
    GM72V66841CT-8 LG Semicon 2097152 word x 8 bit x 4 bank synchronous dynamic RAM Original PDF
    GM72V66841ELT-10K Hynix Semiconductor 2,097,152 WORD x 8 BIT x 4 BANK SYNCHRONOUS DYNAMIC RAM Original PDF
    GM72V66841ELT-7 Hynix Semiconductor 2,097,152 WORD x 8 BIT x 4 BANK SYNCHRONOUS DYNAMIC RAM Original PDF
    GM72V66841ELT-75 Hynix Semiconductor 2,097,152 WORD x 8 BIT x 4 BANK SYNCHRONOUS DYNAMIC RAM Original PDF
    GM72V66841ELT-7J Hynix Semiconductor 2,097,152 WORD x 8 BIT x 4 BANK SYNCHRONOUS DYNAMIC RAM Original PDF
    GM72V66841ELT-7K Hynix Semiconductor 2,097,152 WORD x 8 BIT x 4 BANK SYNCHRONOUS DYNAMIC RAM Original PDF
    GM72V66841ELT-8 Hynix Semiconductor 2,097,152 WORD x 8 BIT x 4 BANK SYNCHRONOUS DYNAMIC RAM Original PDF
    GM72V66841ET Hynix Semiconductor 2,097,152 WORD x 8 BIT x 4 BANK SYNCHRONOUS DYNAMIC RAM Original PDF
    GM72V66841ET-7 Hynix Semiconductor 2,097,152 WORD x 8 BIT x 4 BANK SYNCHRONOUS DYNAMIC RAM Original PDF
    GM72V66841ET-7K Hynix Semiconductor 2,097,152 WORD x 8 BIT x 4 BANK SYNCHRONOUS DYNAMIC RAM Original PDF

    GM72V66841 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    GM72V66841ET

    Abstract: No abstract text available
    Text: GM72V66841ET/ELT 2,097,152 WORD x 8 BIT x 4 BANK SYNCHRONOUS DYNAMIC RAM Description The GM72V66841ET/ELT is a synchronous dynamic random access memory comprised of 67,108,864 memory cells and logic including input and output circuits operating synchronously


    Original     		PDF GM72V66841ET/ELT GM72V66841ET/ELT BA0/A13 BA1/A12 TTP-54D) TTP-54D GM72V66841ET

    2272 decoder

    Abstract: GM72V66841ET EIAJ lcdd lpec1
    Text: GM72V66841ET/ELT 2,097,152 WORD x 8 BIT x 4 BANK SYNCHRONOUS DYNAMIC RAM Description The GM72V66841ET/ELT is a synchronous dynamic random access memory comprised of 67,108,864 memory cells and logic including input and output circuits operating synchronously


    Original     		PDF GM72V66841ET/ELT GM72V66841ET/ELT PC133/PC100/PC66 143MHz 133MHz 125MHz) PC100 143/133/125/100MHz 2272 decoder GM72V66841ET EIAJ lcdd lpec1

    GM72V66841G

    Abstract: No abstract text available
    Text: GM72V66841G 4 Banks x 2M x 8Bit Synchronous DRAM DESCRIPTION The Hyundai GM72V66841G is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. GM72V66841G is organized as 4banks of 2,097,152x8.


    Original     		PDF GM72V66841G GM72V66841G 864-bit 152x8. 400mil 54pin

    KM48S8030BT-GL

    Abstract: nn5264805tt-b60 KM48S2020CT-GL 0364804CT3B-260 d4564163g5 nt56v1680a0t D4564841g5 81F641642B-103FN M5M4V16S30DTP Siemens 9832
    Text: PC100 SDRAM Component Testing Summary As part of Intel’s enabling process, the following test/characterization procedure has been implemented on PC100 SDRAM components. A small sample of components 2-5 devices have been tested under the conditions described in Table 2.


    Original     		PDF PC100 KM48S8030BT-GL nn5264805tt-b60 KM48S2020CT-GL 0364804CT3B-260 d4564163g5 nt56v1680a0t D4564841g5 81F641642B-103FN M5M4V16S30DTP Siemens 9832

    KM416S4030BT-G10

    Abstract: KM48S2020CT-GL 81F641642B-103FN d4564163g5 S9745-M06 M5M4V16S30DTP gm72v661641ct7j D4564163G5-A10-9JF D4516821AG5 D4516821
    Text: PC100 SDRAM Component Testing Summary As part of Intel’s enabling process, the following test/characterization procedure has been implemented on PC100 SDRAM components. A small sample of components 2-5 devices have been tested under the conditions described in Table 2.


    Original     		PDF PC100 KM416S4030BT-G10 KM48S2020CT-GL 81F641642B-103FN d4564163g5 S9745-M06 M5M4V16S30DTP gm72v661641ct7j D4564163G5-A10-9JF D4516821AG5 D4516821

    gm72v661641ct

    Abstract: GM72V66441CT
    Text: LG Semicon Co.,Ltd. REVISION HISTORY / Revision 1.0: July 1998 - Add PC100,7K 2-2-2 Specifications. - Update Icc Specifications. - Change Input Test Condition from 2.8/0.0V to 2.4/0.4V. - Added post SPD Information separately(7K/7J/10K) for Modules. - Add Minimum Capacitance Value for Component.


    Original     		PDF PC100 7K/7J/10K) GM72V66841CT/CLT GM72V66841CT/CLT TTP-54D) TTP-54D gm72v661641ct GM72V66441CT

    Asus PC MOTHERBOARD CIRCUIT MANUAL

    Abstract: cwt 235 atx FSP250-61gn acer motherboard jumper settings D4516821AG5 fsp300 Atx-1125b ATX 235 KEYTRONIC d4564163g5
    Text: A Guide to Building a PC with an AMD Athlon Processor TM Publication # 22914 Issue Date: September 1999 Rev: B 1999 Advanced Micro Devices, Inc. All rights reserved. The contents of this document are provided in connection with Advanced Micro Devices, Inc. “AMD” products. AMD makes no representations or warranties with


    Original     		PDF 22914B/0--September Asus PC MOTHERBOARD CIRCUIT MANUAL cwt 235 atx FSP250-61gn acer motherboard jumper settings D4516821AG5 fsp300 Atx-1125b ATX 235 KEYTRONIC d4564163g5

    gm72v661641ct7j

    Abstract: motherboard ic list d4564163g5 D4516821AG5 TC59S1608AFT-10 v54c365804vbt8pc GM72v66841ct7j D4564841g5 GM72V66841CT-7J D4564841G5-A10B-9JF
    Text: Microstar MSI Motherboard Memory Recommendations December 15, 1999 Microstar Motherboard Recommended Memory List (Revised 08-06-99) Manufacturer Model Number (IC Part Number) Type Size Fujitsu (BUFFALO) 81F16822D-102LFN (ECC) SDRAM 32MB LGS (Apacer) GM72V661641CTJ7


    Original     		PDF 81F16822D-102LFN GM72V661641CTJ7 MT48LC4M16A2TG-8C D4516821AG5-A10-7JF KM48S2020CT-GH TMS626812BDGE5H-8 TC59S1608AFT-10 HM5264165TTB60 HM5264805TTB60 gm72v661641ct7j motherboard ic list d4564163g5 D4516821AG5 TC59S1608AFT-10 v54c365804vbt8pc GM72v66841ct7j D4564841g5 GM72V66841CT-7J D4564841G5-A10B-9JF

    KM48S8030BT-GL

    Abstract: NT56V1680A0T D4516821AG5 KM416S4030BT-GL 81f641642b103fn KM48S2020CT-GL D4516821AG5-A107JF gm72v661641ct7j TC59S6408BFT80 D4564163G5
    Text: PC100 SDRAM Component Testing Summary As part of Intel’s enabling process, the following test/characterization procedure has been implemented on PC100 SDRAM components. A small sample of components 2-5 devices have been tested under the conditions described in Table 2.


    Original     		PDF PC100 KM48S8030BT-GL NT56V1680A0T D4516821AG5 KM416S4030BT-GL 81f641642b103fn KM48S2020CT-GL D4516821AG5-A107JF gm72v661641ct7j TC59S6408BFT80 D4564163G5

    Untitled

    Abstract: No abstract text available
    Text: L i* GM72V66841ET/ELT S e m t o i i C o * , L i d , Description The GM72V66841ET/ELT is a synchronous dynamic random access memory comprised of 67,108,864 memory cells and logic including input and output circuits operating synchronously by referring to the positive edge of the externally


    OCR Scan     		PDF GM72V66841ET/ELT GM72V66841ET/ELT TTP-54D)

    Untitled

    Abstract: No abstract text available
    Text: Preliminary GM72V66841DI/DLI L G S e m i e o n C o « ,L td « 2,097,152 w o r d x 8 b i t x 4 b a n k SYNCHRONOUS DYNAMIC RAM Description The GM72V66841DI/DLI is a synchronous dynamic random access memory comprised of 67,108,864 memory cells and logic including


    OCR Scan     		PDF GM72V66841DI/DLI GM72V66841DI/DLI PC100

    Untitled

    Abstract: No abstract text available
    Text: Preliminary GM72V66841ET/ELT L G S e m i e o n C o « ,L td « 2,097,152 w o r d x 8 b i t x 4 b a n k SYNCHRONOUS DYNAMIC RAM Description The GM72V66841ET/ELT is a synchronous dynamic random access memory comprised of 67,108,864 memory cells and logic including


    OCR Scan     		PDF GM72V66841ET/ELT GM72V66841ET/ELT PC100 TTP-54D) TTP-54D 0-53g

    3DA93D

    Abstract: GM72V66841ET q649 TTP-54D
    Text: Preliminary GM72V66841ET/ELT L G S e m ic o n C o«,L td« Description The GM72V66841ET/ELT is a synchronous dynamic random access memory comprised of 67,108,864 memory cells and logic including input and output circuits operating synchronously by referring to the positive edge of the externally


    OCR Scan     		PDF GM72V66841ET/ELT GM72V66841ET/ELT PC133/PC100/PC66 143MHz 133MHz 125MHz) 143/133/125/100MHz 3DA93D GM72V66841ET q649 TTP-54D

    Untitled

    Abstract: No abstract text available
    Text: # L G Semicon Co.,Ltd. SYNCHRONOUS DYNAMIC RAM Description The GM72V66841DI/DLI is a synchronous dynamic random access memory comprised of 67,108,864 memory cells and logic including input and output circuits operating synchronously by referring to the positive edge of the externally


    OCR Scan     		PDF GM72V66841DI/DLI GM72V66841DI/DLI BA0/A13 BA1/A12 PC100

    Untitled

    Abstract: No abstract text available
    Text: LG Semicon C o.,Ltd. GM72V66841ET/ELT 2m i n WQRD x 8 BIT x 4 BANK SYNCHRONOUS DYNAMIC RAM Description The GM72V66841ET/ELT is a synchronous dynamic random access memory comprised of 67,108,864 memory cells and logic including input and output circuits operating synchronously


    OCR Scan     		PDF GM72V66841ET/ELT GM72V66841ET/ELT BA0/A13 BA1/A12 V66841ET/ELT TTP-54D)

    GM72V66441

    Abstract: GM72V66841
    Text: Preliminary VerO. 1 LG Semicon Co.,Ltd. Description The G M 72V66841C T is a synchronous dynamic random access memory comprised of 67,108,864 memory cells and logics including input and output circuits operating synchronously by refering to the positive edge of the externally provided clock.


    OCR Scan     		PDF GM72V66841CT 72V66841C GM72V66841CT TTP-54D) GM72V66441 GM72V66841

    4mx16

    Abstract: HYM7V65401 8Mx72 PC100 16Mx64 1MX16BIT MX321 7V651601 Y57V641620HG y57v641620
    Text: TABLE OF CONTENTS 1. TABLE OF CONTENTS Index 2. PRODUCT QUICK REFERENCE SDRAM Part Num bering 9 SDRAM M odule Part Num bering 11 3. DATA SHEETS SDRAM 16M -bit SDRAM HY57V 161610DTC HY57V161610DTC-I 1Mx16-bit, 4K Ref., 2Banks, 3.3V 1 M x16-bit, 4K Ref., 2Banks, 3.3V, ET_Part


    OCR Scan     		PDF HY57V 161610DTC HY57V161610DTC-I 1Mx16-bit, x16-bit, HYM41V33100BTWG HYM41V33100DTYG PC133 1Mx32, 1Mx16 4mx16 HYM7V65401 8Mx72 PC100 16Mx64 1MX16BIT MX321 7V651601 Y57V641620HG y57v641620

    GMM26416233CNT

    Abstract: GMM26416233CNTG7J
    Text: G M M 26416233C N T G 16,777,216 w o r d s x 64bit SYNCHRONOUS DYNAMIC RAM MODULE L G S e m ic o n C o .,L td . Description The GMM26416233CNTG is a 16M x 64bits Synchronous Dynamic RAM MODULE which is assembled 16 pieces of 8M x Bbits Synchronous DRAMs in 54 pin


    OCR Scan     		PDF 26416233C 64bit GMM26416233CNTG 64bits GMM26416233CNTG oi68i GMM26416233CNT GMM26416233CNTG7J

    1gb pc133 SDRAM DIMM 144pin

    Abstract: 54-PIN PC100 gm72v66841
    Text: 2 . PRODUCT QUICK REFERENCE PRODUCT QUICK REFERENCE HY XX X XX XX X X X X X X - xx x .L HYNIX MEMORY : SDRAMs PROCESS & POWER SUPPLY : CMOS, 3.3V DENSITY & REFRESH 64M 4K Refresh 64M 8K Refresh 128M 4K Refresh 256M 8K Refresh 64 65 28 56 12 512M 8K Refresh


    OCR Scan     		PDF 200MHz 183MHz 166MHz 143MHz PC133 125MHz PC100, 100MHz 1gb pc133 SDRAM DIMM 144pin 54-PIN PC100 gm72v66841

    gm72v16821

    Abstract: GMM2645233CTG gm72v16821ct
    Text: LG Semicon SDRAM UNE-UP NOTE : * ; Comming Soors, f ; Under Development 11 LG Serntcon 2. SDRAM DIMM MODULE NOTE : * ; Comming Soon, f ; Under Development 12 SDRAM LINE-UP LG Semicon SDRAM LINE-UP SDRAM DIMM MODULE Contiuned NOTE : * ; Comming Soon, 1 1Under Development


    OCR Scan     		PDF GM72V16421CT 400M1L) 512Kx GMM27332233CTG 27332230CMTG 16Mx4) 100/125MHz MAR98 144pin 66/83/100MHz gm72v16821 GMM2645233CTG gm72v16821ct

    GMM2649233CTG-7J

    Abstract: SCX11 GMM2649233 MM2649233CTG ata commands 2649233 2649233CTG
    Text: GMM2649233CTG LG Semicon Co.,Ltd. 8,388,608 WORDS x64bit SYNCHRONOUS DYNAMIC RAM MODULE Description The GM M 2649233CTG is a 8M x 64bits Synchronous Dynamic RAM MODULE w hich is assembled 8 pieces o f 8M x 8bits Synchronous DRAM s in 54 pin TSOP U package and one 2048 bit EEPROM in 8pin


    OCR Scan     		PDF GMM2649233CTG 64bits 2649233CTG 2649233CTG GMM2649233CTG x64bit GMM2649233CT GMM2649233CTG-7J SCX11 GMM2649233 MM2649233CTG ata commands 2649233

    gm72v661641ct

    Abstract: 72V661641 GM72V661641 GM72V66441 vero cells 72V661641C 12A13 gm72v661641c
    Text: Preliminary VerO. 1 LG Semicon Co.,Ltd. Description The G M 72V661641C T is a synchronous dynamic random access memory comprised of 67,108,864 memory cells and logics including input and output circuits operating synchronously by refering to the positive edge of the externally provided clock.


    OCR Scan     		PDF 72V661641C GM72V661641CT GM72V661641CT TTP-54D) 72V661641 GM72V661641 GM72V66441 vero cells 12A13 gm72v661641c

    gm72v16821ct

    Abstract: GMM2645233CTG GM72V661641 GMM2734233CNTG GMM26416233CNTG gm72v16821dt GMM2644233CN GMM2644233 GM72V1682
    Text: LG Semicon PRODUCT INDEX • 16M SDRAM GM72V16421CT 2M x 4 Bit, 2Bank, 3.3.V. 4K R e f- -25 GM72V16421DT 2M x 4 Bit, 2Bank, 3.3.V, 4K R e f-46 GM72V16821CT 1M x 8 Bit, 2Bank, 3.3.V, 4K R e f- 67


    OCR Scan     		PDF GM72V16421CT GM72V16421DT GM72V16821CT GM72V16821DT GM72V161621CT GM72V66441CT GM72V66841CT GM72V661641CT 16MByte GMM2642227CNTG GMM2645233CTG GM72V661641 GMM2734233CNTG GMM26416233CNTG GMM2644233CN GMM2644233 GM72V1682

    Untitled

    Abstract: No abstract text available
    Text: GMM27316233CNTG LG Semicon Co.,Ltd. Description The G M M 27316233CNTG is a 16M x 72bits Synchronous Dynamic RAM MODULE which is assembled 18 pieces of 8M x 8bits Synchronous DRAMs in 54 pin TSOP 11 package and one 2048 bit EEPROM in 8pin TSSOP package mounted on a 168


    OCR Scan     		PDF GMM27316233CNTG 72bits 27316233CNTG 27316233CNTG GMM27316233CNTG x72BIT