B772Y
Abstract: B772 B772 SPECIFICATION b772 to 126 B772 equivalent B772 marking B772-Y transistors b772 hFE kec transistor b772
Text: SEMICONDUCTOR KTB772 MARKING SPECIFICATION TO-126 PACKAGE 1. Marking method Laser Marking 2. Marking K B772 Y 016 No. Item Marking Description 1 KEC K KEC CORP. 2 Device Name B772 KTB772 3 hFE Grade Y O,Y,GR 4 Lot No. 016 00.12.27 Revision No : 00 Year 0 ~ 9 : 2000~2009
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KTB772
O-126
B772Y
B772
B772 SPECIFICATION
b772 to 126
B772 equivalent
B772 marking
B772-Y
transistors b772
hFE kec
transistor b772
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126C Plastic-Encapsulate Transistors B772 TO- 126C TRANSISTOR（ PNP ） FEATURES •Low Speed Switching 1. BASE 2. COLLECTOR 3. EMITTER MAXIMUM RATINGS* Ta=25 ℃ unless otherwise noted Symbol Parameter
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O-126C
-100mA
10MHz
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors TO-126 B772 TRANSISTOR PNP FEATURES 1. EMITTER Low speed switching 2. COLLECTOR Value Units VCBO Collector-Base Voltage Parameter -40 V VCEO Collector-Emitter Voltage
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O-126
O-126
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br b772
Abstract: TRANSISTOR b772 B772 TRANSISTOR br b772 b772 transistor B772 datasheet B772 equivalent B772 PNP transistors b772 b772 to 126
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors B772 TRANSISTOR PNP TO-126 FEATURES •Low speed switching 1. EMITTER 2.COLLECTOR 3.BASE 123 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value
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O-126
O-126
-10mA
-100A
10MHz
br b772
TRANSISTOR b772
B772
TRANSISTOR br b772
b772 transistor
B772 datasheet
B772 equivalent
B772 PNP
transistors b772
b772 to 126
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b772
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors B772 TRANSISTOR（ PNP ） TO—126 FEATURES •Low speed switching 1. EMITTER 2.COLLECTOR 3.BASE 123 MAXIMUM RATINGS* TA=25℃ unless otherwise noted Symbol Parameter
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O-126
specified-100
-100mA
10MHz
b772
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors TO-126 B772 TRANSISTOR PNP FEATURES 1. EMITTER Low Speed Switching 2. COLLECTOR 3 BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Value Unit VCBO Collector-Base Voltage
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O-126
O-126
-10mA
10MHz
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B772 PNP
Abstract: b772 p B772 SPECIFICATION br b772 B772 B772 equivalent B772 C S H B772 B772 E pnp b772
Text: B772 PNP Type Elektronische Bauelemente Plastic Encapsulate Transistors RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free TO-126 Features 2.7±0.2 7.6±0.2 * Low speed switching 1.3±0.2 4.0±0.1 10.8±0.2 O 3.1± 0.1 MAXIMUM RATINGS* TA=25 C unless otherwise noted
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O-126
01-Jun-2004
B772 PNP
b772 p
B772 SPECIFICATION
br b772
B772
B772 equivalent
B772 C S
H B772
B772 E
pnp b772
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors B772 TRANSISTOR（ PNP ） TO—126 FEATURES Power dissipation PCM : 1.25 W（Tamb=25℃） Collector current ICM : -3 A Collector-base voltage V BR CBO : -40 V Operating and storage junction temperature range
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O-126
290TYP
090TYP
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br b772
Abstract: b772 transistor TRANSISTOR br b772 b772 pnp b772 TRANSISTOR b772 transistors b772 b772 pnp
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors B772 TRANSISTOR PNP TO-126 FEATURES Power dissipation 1. EMITTER 1.25 PCM: W (Tamb=25℃) 2. COLLECTOR Collector current -3 A ICM: Collector-base voltage -40 V V(BR)CBO:
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O-126
O-126
-100mA
10MHz
br b772
b772 transistor
TRANSISTOR br b772
b772
pnp b772
TRANSISTOR b772
transistors b772
b772 pnp
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b772 p
Abstract: BR B772
Text: TO-126C Plastic-Encapsulate Transistors B772 TRANSISTOR（ PNP ） TO—126C FEATURES •Low speed switching 1. EMITTER 2.COLLECTOR 3.BASE 123 MAXIMUM RATINGS* TA=25℃ unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage -40 V VCEO
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O-126C
10MHz
b772 p
BR B772
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br b772
Abstract: TRANSISTOR b772 TRANSISTOR br b772 B772 b772 to 126 B772 PNP transistor GR 3200 b772 to126 TRANSISTOR b772 br B772 TO-126
Text: B772 PNP TO-126 Transistor TO-126 2.500 1.100 2.900 1.500 7.400 7.800 1. EMITTER 3.900 4.100 3.000 3.200 10.60 0 11.00 0 2.COLLECTOR 0.000 0.300 2.100 2.300 3.BASE 3 2 Features 1.170 1.370 1 15.30 0 15.70 0 Low speed switching 0.660 0.860 0.450 0.600 2.290 TYP
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O-126
O-126
-100A
-10mA
-100A
10MHz
br b772
TRANSISTOR b772
TRANSISTOR br b772
B772
b772 to 126
B772 PNP
transistor GR 3200
b772 to126
TRANSISTOR b772 br
B772 TO-126
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transistor b722
Abstract: transistor b722 p B722 p B722 TRANSISTOR DATA b772 to 126 transistor b722 b N E C B772 b722 transistor pnp b722 b772 p
Text: B772 TO-126 Plastic-Encapsulate Transistors Transistor PNP FEATURES TO-126 Power dissipation o P CM :1.25 W (Tamb=25 C) Collector current I CM :-3 A 1.EMITTER Collector-base voltage 2.COLLECTOR V (BR)CBO :-40 V 3.BASE 1 2 3 ELECTRICAL CHARACTERISTICS o (Tamb=25 C unless otherwise specified)
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O-126
O-126
transistor b722
transistor b722 p
B722 p
B722 TRANSISTOR DATA
b772 to 126
transistor b722 b
N E C B772
b722
transistor pnp b722
b772 p
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b772 p
Abstract: TRANSISTOR b772 b772 npn complementary b772 TRANSISTOR b772 p b772 q POWER AND MEDIUM POWER TRANSISTOR 2SB772 b772 to 126 2SB772 B772 TRANSISTOR
Text: 2SB772 PNP medium power transistor Features • High current ■ Low saturation voltage ■ Complement to 2SD882 Applications ■ Voltage regulation ■ Relay driver ■ Generic switch ■ Audio power amplifier ■ DC-DC converter 3 2 1 SOT-32 TO-126 Figure 1.
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2SB772
2SD882
OT-32
O-126)
2SD882.
JESD97.
b772 p
TRANSISTOR b772
b772 npn
complementary b772
TRANSISTOR b772 p
b772 q
POWER AND MEDIUM POWER TRANSISTOR 2SB772
b772 to 126
2SB772
B772 TRANSISTOR
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2SB772
Abstract: TO-216 B772 datasheet 2SB7722 B772 POWER AND MEDIUM POWER TRANSISTOR 2SB772 2SD882 JESD97 b772 transistor pnp b772
Text: 2SB772 PNP MEDIUM POWER TRANSISTOR Features • HIGH CURRENT ■ LOW SATURATION VOLTAGE ■ COMPLEMENT TO 2SD882 Applications ■ VOLTAGE REGULATION ■ RELAY DRIVER ■ GENERIC SWITCH ■ AUDIO POWER AMPLIFIER ■ DC-DC CONVERTER 3 2 1 SOT-32 TO-216 Description
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2SB772
2SD882
OT-32
O-216)
2SD882.
2SB772
TO-216
B772 datasheet
2SB7722
B772
POWER AND MEDIUM POWER TRANSISTOR 2SB772
2SD882
JESD97
b772 transistor
pnp b772
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B772 equivalent
Abstract: b772 to 126 b772 p TRANSISTOR b772 B772 SPECIFICATION pnp b772 BTB772T3S complementary b772 B772 b772 pnp
Text: CYStech Electronics Corp. Spec. No. : C817T3-H Issued Date : 2002.08.18 Revised Date : 2005.09.16 Page No. : 1/4 Low Vcesat PNP Epitaxial Planar Transistor BTB772T3/S Features • Low VCE sat , typically -0.3V at IC / IB = -2A / -0.2A • Excellent current gain characteristics
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C817T3-H
BTB772T3/S
BTD882T3/S
O-126
UL94V-0
B772 equivalent
b772 to 126
b772 p
TRANSISTOR b772
B772 SPECIFICATION
pnp b772
BTB772T3S
complementary b772
B772
b772 pnp
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B772 equivalent
Abstract: C817T3-H TRANSISTOR b772 b772 q b772 b772 p BTD8 BTB772T3 BTD882T3 B772 SPECIFICATION
Text: CYStech Electronics Corp. Spec. No. : C817T3-H Issued Date : 2002.08.18 Revised Date : 2005.11.22 Page No. : 1/4 Low Vcesat PNP Epitaxial Planar Transistor BTB772T3 Features • Low VCE sat , typically -0.3V at IC / IB = -2A / -0.2A • Excellent current gain characteristics
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C817T3-H
BTB772T3
BTD882T3
BTB772T3/S
O-126
UL94V-0
B772 equivalent
C817T3-H
TRANSISTOR b772
b772 q
b772
b772 p
BTD8
BTB772T3
BTD882T3
B772 SPECIFICATION
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2SD882 pnp
Abstract: 2sb772 2SD882 br d882 p D882 B772 D882 b772 p J D882 transistor D882 datasheet 2SB77
Text: 2SB772 2SD882 PNP / NPN Epitaxial Planar Transistors TO-126 P b Lead Pb -Free 1.EMITTER 2.COLLECTOR 3.BASE 1 2 3 ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Rating Symbol PNP/2SB772 NPN/2SD882 Unit Collector-Emitter Voltage VCEO -30 30 Vdc Collector-Base Voltage VCBO
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2SB772
2SD882
O-126
PNP/2SB772
NPN/2SD882
O-126
2SD882 pnp
2sb772
2SD882
br d882 p
D882 B772
D882
b772 p
J D882
transistor D882 datasheet
2SB77
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2SD882
Abstract: 2sb772 D882 p h D882 transistor D882 datasheet 2SD882 pnp 2SB772 equivalent br b772 D882 B772 transistor b772
Text: 2SB772 2SD882 PNP/NPN Epitaxial Planar Transistors TO-126 1. EMITTER 2.COLLECTOR 3.BASE 1 2 3 ABSOLUTE MAXIMUM RATINGS Ta=25 C Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base VOltage Collector Current (DC) Symbol VCEO VCBO VEBO IC(DC)
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2SB772
2SD882
O-126
PNP/2SB772
NPN/2SD882
2SB772
2SD882
D882 p
h D882
transistor D882 datasheet
2SD882 pnp
2SB772 equivalent
br b772
D882 B772
transistor b772
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2SD882
Abstract: 2SB772
Text: 2SB772 2SD882 PNP/NPN Epitaxial Planar Transistors TO-126 * “G” Lead Pb -Free 1. EMITTER 2.COLLECTOR 3.BASE 1 2 3 ABSOLUTE MAXIMUM RATINGS (Ta=25 C) Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base VOltage Collector Current (DC) Symbol
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2SB772
2SD882
O-126
PNP/2SB772
NPN/2SD882
2SD882
2SB772
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Untitled
Abstract: No abstract text available
Text: 2SB772 PNP medium power transistor Features • High current ■ Low saturation voltage ■ Complement to 2SD882 Applications ■ Voltage regulation ■ Relay driver ■ Generic switch ■ Audio power amplifier ■ DC-DC converter 3 2 1 SOT-32 TO-126 Figure 1.
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2SB772
2SD882
OT-32
O-126)
2SD882.
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2SB772
Abstract: B772 TRANSISTOR b772 p 2SD882 complementary b772 BR B772 TRANSISTOR b772 b772 q 0016114E JESD97
Text: 2SB772 PNP medium power transistor Features • High current ■ Low saturation voltage ■ Complement to 2SD882 Applications ■ Voltage regulation ■ Relay driver ■ Generic switch ■ Audio power amplifier ■ DC-DC converter 3 2 1 SOT-32 TO-126 Figure 1.
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2SB772
2SD882
OT-32
O-126)
2SD882.
2SB772
B772
TRANSISTOR b772 p
2SD882
complementary b772
BR B772
TRANSISTOR b772
b772 q
0016114E
JESD97
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Transistor S8550 2TY
Abstract: Schottky barrier sot-23 Marking s4 sk 8050s KL4 SOT-23 d882 to-92 BR S8050 bq d882 transistor D882 datasheet S8050 equivalent PCR100-6
Text: DIODES IN SOD-123 1N4148W 1N4448W 1N5711W* 1N6263W* B0520LW B0530W B0540W B5817W B5818W B5819W BAT42W BAT43W BAT46W* BAV16W BAV19W BAV20W BAV21W SD101AW* SD101BW* SD101CW* SD103AW SD103BW SD103CW PD VR V IFM(mA) IR( A) (mW) 350 75 350 75 250
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OD-123
1N4148W
1N4448W
1N5711W*
1N6263W*
B0520LW
B0530W
B0540W
B5817W
B5818W
Transistor S8550 2TY
Schottky barrier sot-23 Marking s4
sk 8050s
KL4 SOT-23
d882 to-92
BR S8050
bq d882
transistor D882 datasheet
S8050 equivalent
PCR100-6
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b772 q
Abstract: B772 031 br b772 B772 BR 8772 H B772 CA 8772 transistor b772 B772 C S transistor 8772
Text: TO-126 Plastic-Encapsulate Transistors^ B772 TRANSISTO R PNP F EATURES Power dissipation TO-126 1.25W (Tamb=25°C) P cm; C o llecto r current 1 .E M IT T E R I cm ; -3 A 2 .COLLECTOR -base voltage 3 . BASE V(BR)CBO: -4 0 V O perating and storage ju n ctio n tem perature range
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OCR Scan
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O-126
O-126
b772 q
B772 031
br b772
B772
BR 8772
H B772
CA 8772
transistor b772
B772 C S
transistor 8772
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N E C B772
Abstract: b772 p B772 B772T H B772
Text: TO-126 Plastic-Encapsulate T r a n s i s t o r s ^ B 772 T R A N S IS T O R P N P FEATURES Power dissipation Pcm: 1.25W (Tamb=25°C) Collector current IcM: -3 A Collector-base voltage V (B R )C B O : -40 V Operating ami storage junction temperature range
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OCR Scan
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O-126
N E C B772
b772 p
B772
B772T
H B772
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