BD806
Abstract: TRANSISTOR C 557 B B0806 TRANSISTOR bd 147 BD808 b0808 ADC 808 adc 809 T557 221A-04
Text: M OT OR OL A SC X S TR S /R 1EE D I F b3fci7254 QDâM7ti3 b | MOTOROLA SEMICONDUCTOR TECHNICAL DATA PLASTIC HIGH POWER SILICON PNP TRANSISTOR . . . designed for use in high power audio amplifiers complementary or quasi complementary circuits. utilizing 10 AMPERE
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b3fci7254
47fci3
bd806
bd810
Ran003
AN-415)
TRANSISTOR C 557 B
B0806
TRANSISTOR bd 147
BD808
b0808
ADC 808
adc 809
T557
221A-04
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MJ340
Abstract: EM- 546 motor MJ3042
Text: MOTORCLA SC 12E D I b3fci7254 QG0MC17,1 7 | XSTRS/R F r-33^ 9 MOTOROLA SEMICONDUCTOR TECHNICAL DATA DARUNGTON 10 AMPERES POWER TRANSISTORS NPN SILICON HIGH VOLTAGE SILICON POWER DARUNGTONS . . . developed for line operated amplifier, series pass and switching
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b3fci7254
MJ3041
MJ3402
MJ3041,
MJ3042
MJ340
EM- 546 motor
MJ3042
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mrf2001
Abstract: RF2005 MRF2005
Text: lEE D I b3fci7254 ÜOflñOEO 2 | MO TOR OLA SC T - XSTRS/R F MOTOROLA SEM ICO NDUCTOR MRF2001 MRF2001B TECHNICAL DATA The RF Line 1.0 W NPN SILICON MICROWAVE POWER TRANSISTORS 2 GHz MICROWAVE POWER TRANSISTORS NPN S IL IC O N , . . designed fo r Class B and C am p lifie r o r oscillator applications
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b3fci7254
MRF2001
MRF2001B
F2003
RF2005
RF2010
ZT-Z11
MRF2001,
MRF2005
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J03037
Abstract: motorola rf Power Transistor RF POWER TRANSISTOR NPN J0303
Text: MOTOROLA SC XSTRS/R F 4bE b3fci7254 D O O 'm ns T-3 1 •flOTb 3 -1 3 MOTOROLA SEMICONDUCTOR TECHNICAL DATA J03037 The RF Line NPN Silicon UHF Power Transistor 3 7 W — 512 M H z RF PO W ER T R A N S IS T O R N P N S IL IC O N . . . des ig n e d p rim a rily fo r 12.5 V o lt w id e b a n d , larg e-sig n al a m p lifie r ap p licatio n s in
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b3t72SM
J03037
16A-01.
J03037
motorola rf Power Transistor
RF POWER TRANSISTOR NPN
J0303
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wf vqe 24 d
Abstract: 2N5898 2N5989 225AB 25CC 2N5991 MBD5300 TO-225AB mbd-5300 Transistor J3T 3 pin
Text: MOTOROLA SC XSTRS/R F 12Ë D | b3L?254 OG 0MS?b ? | ^33 NPN MOTOROLA SEMICONDUCTOR 2N5989 2N5991 TECHNICAL DATA 12 AM PERE POWER PLASTIC COM PLEM ENTARY SILICON POWER TRANSISTORS POWER TRANSISTORS COM PLEM ENTARY SILICON * '* .J .J. . designed fo r use In g eneral-purpose am p lifier and sw itching
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b3L7254
2N5989
2N5991
2N5989
2N5991
wf vqe 24 d
2N5898
225AB
25CC
MBD5300
TO-225AB
mbd-5300
Transistor J3T 3 pin
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vk200 rf choke
Abstract: vk200 MRF156 VK200 r.f choke arco 469 340G-02 choke vk200 MOSFET J220 MRF156120 Arco 469 ceramic capacitor
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Advance Information MRF156 MRF156R The RF MOSFET Line RF Power Field-E ffect Transistors Motorola Preferred Device N-Channel Enhancement Mode MOSFETs Designed for broadband industrial/commercial applications up to 120 MHz.
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MRF156
MRF156R
340G-02,
O-264AA)
VK200
MRF156120
MRF156R
83-j3
vk200 rf choke
VK200 r.f choke
arco 469
340G-02
choke vk200
MOSFET J220
Arco 469 ceramic capacitor
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1RFZ40
Abstract: 1RF150 MTP25N10E mth7n50 Transistor MTP35N06E BUZ80a equivalent buz90 equivalent MTP40N06M MFE9200 MTH7N50
Text: MOTOROLA SC X S T R S /R IME D | F b3b?2S4 Q O fl' iB n 1 | J l 9 / - 6 0 Selection by Package The product listed in Tables t through 22 have been com piled on an IBM or compatible personal computer disk for quick selection of product. This versatile disk may be obtained
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DK101/D.
0020-frJ
1RFZ40
1RF150
MTP25N10E
mth7n50 Transistor
MTP35N06E
BUZ80a equivalent
buz90 equivalent
MTP40N06M
MFE9200
MTH7N50
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mtd10n05e
Abstract: CASE369A
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MTD10N05E Designer's Data Sheet Motorola Preferred Device TM OS IV Power Field Effect Transistor TM O S POWER FETs 10 AMPERES RDS on = 0.1 O H M 50 VOLTS N-Channel Enhancement-Mode DPAK fo r Surface Mount This advanced "E " series of TMOS power MOSFETs is
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MTD10N05E
ti3b7S54
mtd10n05e
CASE369A
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BCX70GL
Abstract: BCX70HL BCX70JL BCX70KL MPS3904
Text: MOT OROL A SC XSTRS/R F 1SE 0 I b3t,7aS4 OGflSiQB 1 | MAXIMUM RATINGS S ym bol Value U n it C o lle ctor-E m itter Voltage R ating VCEO 45 Vdc Collector-Base Voltage VCBO 45 Vdc Em itter-Base Voltage Vebo 5.0 Vdc ic 200 m A dc S ym bol M ax U n it PD 225 mW
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T-Xt-01
BCX70GL,
OT-23
O-236AB)
BCX70GL
BCX70HL
BCX70JL
BCX70KL
MPS3904
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Untitled
Abstract: No abstract text available
Text: b 3 b ? 2 5 4 G l O l b l G Sbb « M O T b O rder th is data sheet by MUN5211T1/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA Bias Resistor TVansistor NPN Silicon Surface Mount Transistor With M onolithic Bias Resistor N etw ork M UN5211T1 M UN5212T1 M UN5213T1
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MUN5211T1/D
SC-70/SOT-323
2PHX31155F-0
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mgb20n40cl
Abstract: MGB20N40 MTB50P03HDL motorola automotive transistor coil ignition
Text: D2PAK DEVICES continued TMOS Power MOSFETs — N-Channel V(BR)DSS R DS(on) (Volts) Min (Ohms) Max @ Id Id PD<1> (Amps) (cont) Amps (Watts) Max Device 50 0.0095 37.5 MTB75N0SHD 30 0.007 37.5 MTB75N03HDLW 75 75 (') Tc - 25°C I2) Indicates Logic level (3) power rating when mounted on an FR-4 glass epoxy printed circuit board with the minimum pad
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MTB75N0SHD
MTB75N03HDLW
MTB23P06E
MTB50P03HDL<
03A-03
418B-02
b3fci7254
mgb20n40cl
MGB20N40
MTB50P03HDL
motorola automotive transistor coil ignition
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je240
Abstract: MJE241 MJE263 mje240 JE250 MJE244 mje260 mje250 mje252 mjE26
Text: MOT OR CL A SC ÎEE D I b3b?254 QGÖS315 b | X S T RS /R F NPN MOTOROLA SEMICONDUCTOR T -3Î-07 T-33-17 TECHNICAL DATA M1E240, MJE241 MJE243, MJE244 PNP MJE250 thru MIE254 COMPLEMENTARY SILICON POWER PLASTIC TRANSISTORS 4 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON
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T-33-17
M1E240,
MJE241
MJE243,
MJE244
MJE250
MIE254
MJE240,
MJE243/4,
MJE253/4
je240
MJE263
mje240
JE250
MJE244
mje260
mje252
mjE26
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8N35
Abstract: 72SM AN569 MTH8N35 MTH8N40 MTM8N35 MTM8N40 TMOS 8IM40 MTH8
Text: MOTOROLA SC IM E D I XST R S/R F t.3b?aS4 OOfiTötiM 4 | MOTOROLA m SEMICONDUCTOR TECHNICAL DATA MTH8INI35 MTH8N40 MTM8N35 MTM8N40 Designer's Data Sheet Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate TM OS Th ese TM O S Pow er FE T s are designed for high voltage, high
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b3b72S4
MTH8N35
MTH8N40
MTM8N35
MTM8N40
O-29UA
O-218AC
YI4SH1962.
8N35
72SM
AN569
MTM8N40
TMOS
8IM40
MTH8
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BC 177 transistor
Abstract: TRANSISTOR BC 384 MJ16110 transistor a013 MJH16110 AM603 AM503 MJ16010 MUR870 P6302
Text: MOTOROLA SC I X STRS/R F 1 EE 0 I MOTOROLA b3L7E5M D0flSLb4 ^ I T - 3 3 -1 3 Order this data sheet by MJ16110/D SEMICONDUCTOR TECHNICAL DATA M J16110 MJH16110 Designer's Data Sheet IMPN Silico n Pow er Transistors Switchmode III Bridge Series POWER TRANSISTORS
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MJ16110/D
MK145BP,
C60416
MJ16110
MJH16110
BC 177 transistor
TRANSISTOR BC 384
MJ16110
transistor a013
AM603
AM503
MJ16010
MUR870
P6302
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motorola 2198
Abstract: No abstract text available
Text: I MOT OR OL A SC XSTRS/R F 4bE D b3b?2SH □G'mSEG 7 «110Tb MOTOROLA • SEMICONDUCTOR T- 33-05 TECHNICAL DATA The RF Line NPN Silicon High Frequency Transistor 1C = 200 mA HIGH FREQUENCY TRAN SISTO R NPN SILICON . . d e sign e d for ultra-linear co m m u n ic a tio n s o r instrum entation applications. L o w n oise
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110Tb
LT3014
H-121
motorola 2198
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BUZ-10L
Abstract: mtp23n BUZ10L
Text: MOTOROLA SC X STRS/R F 2bE D b3b72SM OGICHDG 1 O rder this d ata sheet by B U Z 10U D MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUZ10L M TP23N 05L Pow er Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate These T M O S Power FETs are designed for high speed,
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b3b72SM
BUZ10L
TP23N
BUZ10L
C65M6
BUZ-10L
mtp23n
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N493
Abstract: basf 100cjd
Text: MOTORCLA SC XSTRS/R F 12E D | b3fc,72SM O G ä M m M T | T- 33-/3 MOTOROLA BUX47 BUX47A SEMICONDUCTOR TECHNICAL DATA 9 AM PERES SWITCHMODE llA SERIES NPN SILICON POWER TRANSISTORS NPN SILICON POWER TRANSISTORS 400 AND 450 V O LT S BVCEO 160 WATTS 850 * 1000 V (BVCEX)
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BUX47
BUX47A
N493
basf
100cjd
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MJE520
Abstract: bd189 sc 6038 MJE12007 MOTOROLA 527 33A mj4647 mje13006 BD 433NPNTO-126 Je105 mps-u
Text: MOTORCLA SC XSTRS/R F 12E D | t3t?5SM aüâ4m ? T | T -9 1 -0 1 Selection By Package Motorola power transistors are available in a wide variety of metal and plastic packages to match thermal, electrical and cost requirements. The following table com pares the basic
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-204AA
-204AE
T0-204A
97A-02
O-205AD
BUS51
BUV21
BUV11
2N6249
BUX41
MJE520
bd189
sc 6038
MJE12007
MOTOROLA 527 33A
mj4647
mje13006
BD 433NPNTO-126
Je105
mps-u
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SC ÍXSTRS/R F> HbE D Order this data sheet by MTH6N100E/D b3b72S4 QÜ'lQ'nb 4 MOTOROLA • i SEMICONDUCTOR S TECHNICAL DATA ■ MTH6N100E Designer's Data Sheet TMOS E-FET High Energy Power FET N-Channel Enhancem ent-Mode Silico n Gate T M O S P O W E R FET
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b3b72S4
MTH6N100E/D
MTH6N100E
O-218AC
C6676Ó
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