B W4 TRANSISTOR Search Results

B W4 TRANSISTOR Result Highlights (5)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

B W4 TRANSISTOR Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
FET K105 Abstract: CN902 B1DHDC000028 k522 diode D902L k105 fet R-312 panasonic radio transistor k520 transistor k84 LE80536 Text: ORDER NO. CPD0511051C1 Personal Computer CF-W4 This is the Service Manual for the following areas. M …for U.S.A. and Canada Model No. CF-W4GWCZZ 1 2 1: Operation System B: Microsoft Windows® XP Professional 2: Area M: Refer to above area table 2005 Matsushita Electric Industrial Co., Ltd. All rights reserved.	Original	PDF	CPD0511051C1 EN60825 contrD500F-T1B-A N2012ZP600T25 ACM2012-900-2P-T 87520-6010BPLF CN903 N2012ZP600T25 CN901 SM12B-SRSS-TB FET K105 CN902 B1DHDC000028 k522 diode D902L k105 fet R-312 panasonic radio transistor k520 transistor k84 LE80536
B W4 Transistor Abstract: transistor hemt TRANSISTOR W2 Stanford Microdevices 4 ghz Text: Product Description SMW Series Stanford Microdevices’ SMW Series are high performance GaAs High Electron Mobility Transistor HEMT MMICs housed in thermally-efficient ceramic packages. These HEMT MMICs are fabricated using molecular beam epitaxial growth	Original	PDF
NT 407 F TRANSISTOR Abstract: laptop inverter ccfl Royer converter buck royer inverter lcd BAV99 application royer converter application note Royer Royer resonant GENERALISED RESISTOR DATASHEET CTX110092 Text: Application Note 14 Issue 2 March 1996 Transistor Considerations for LCD Backlighting High Efficiency DC to AC Conversion Neil Chadderton Introduction LCD Backlighting has generated widespread interest from many diverse disciplines within the engineering industry. This has no doubt been fueled	Original	PDF	FZT869 OT223) ZTX689B FZT689B FMMT619 125mV 200mV ZTX1048A ZDT1048 NT 407 F TRANSISTOR laptop inverter ccfl Royer converter buck royer inverter lcd BAV99 application royer converter application note Royer Royer resonant GENERALISED RESISTOR DATASHEET CTX110092
capacitor marking c106 Abstract: NFM18Ps105 TL217 NFM18PS105R0J3 TL222 PTFA220081M Transistor tl217 TRANSISTOR SMD w2 c105 TRANSISTOR c103 TRANSISTOR DATA Text: PTFA220081M Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 8 W, 700 – 2200 MHz Description The PTFA220081M an unmatched 8-watt LDMOS FET suitable for power amplifiers applications with frequencies from 700 MHz to 2200	Original	PDF	PTFA220081M PTFA220081M capacitor marking c106 NFM18Ps105 TL217 NFM18PS105R0J3 TL222 Transistor tl217 TRANSISTOR SMD w2 c105 TRANSISTOR c103 TRANSISTOR DATA
TL113 Abstract: tl201 TL217 w3 smd transistor transistor c111 Text: PTFA220081M Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 8 W, 700 – 2200 MHz Description The PTFA220081M an unmatched 8-watt LDMOS FET suitable for power ampliiers applications with frequencies from 700 MHz to 2200	Original	PDF	PTFA220081M PTFA220081M PG-SON-10 TL113 tl201 TL217 w3 smd transistor transistor c111
c102 TRANSISTOR Abstract: c103 TRANSISTOR c106 TRANSISTOR TRANSISTOR c105 TRANSISTOR c104 c103 m TRANSISTOR p 4712 NFM18PS105R0J3 c105 TRANSISTOR tl113 Text: PTFA220081M Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 8 W, 700 – 2200 MHz Description The PTFA220081M an unmatched 8-watt LDMOS FET suitable for power amplifiers applications with frequencies from 700 MHz to 2200	Original	PDF	PTFA220081M PTFA220081M PG-SON-10 c102 TRANSISTOR c103 TRANSISTOR c106 TRANSISTOR TRANSISTOR c105 TRANSISTOR c104 c103 m TRANSISTOR p 4712 NFM18PS105R0J3 c105 TRANSISTOR tl113
TL139 Abstract: PTFB183404 PTFB183404EF TL148 TRANSISTOR tl131 TL162 TL170 tl172 c105 TRANSISTOR TL145 Text: PTFB183404F Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 340 W, 1805 – 1880 MHz Description The PTFB183404F is a 340-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 1805 to	Original	PDF	PTFB183404F PTFB183404F 340-watt H-37275-6/2 TL139 PTFB183404 PTFB183404EF TL148 TRANSISTOR tl131 TL162 TL170 tl172 c105 TRANSISTOR TL145
TL139 Abstract: TL205 PTFB183404 ptfb183404f transistor TL131 Text: PTFB183404E PTFB183404F Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistors 340 W, 1805 – 1880 MHz Description The PTFB183404E and PTFB183404F are 340-watt LDMOS FETs intended for use in multi-standard cellular power amplifier applications	Original	PDF	PTFB183404E PTFB183404F PTFB183404F 340-watt H-36275-8 H-37275-6/2 TL139 TL205 PTFB183404 transistor TL131
TRANSISTOR C802 Abstract: TL2262 c102 TRANSISTOR C102 M transistor atc100a c103 m TRANSISTOR c103 TRANSISTOR ATC100A100JW150X smd transistor bd 37 TRANSISTOR c104 Text: PTFA220121M Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 12 W, 700 – 2200 MHz Description The PTFA220121M is an unmatched 12-watt LDMOS FET intended for power amplifier applications in the 700 to 2200 MHz. This LDMOS	Original	PDF	PTFA220121M PTFA220121M 12-watt PG-SON-10 TRANSISTOR C802 TL2262 c102 TRANSISTOR C102 M transistor atc100a c103 m TRANSISTOR c103 TRANSISTOR ATC100A100JW150X smd transistor bd 37 TRANSISTOR c104
c102 TRANSISTOR Abstract: PTFA220121M NFM18PS105R0J3 tl111 TRANSISTOR C802 TL204 TL231 c801 TL-205A tl113 Text: PTFA220121M Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 12 W, 700 – 2200 MHz Description The PTFA220121M is an unmatched 12-watt LDMOS FET intended for power amplifier applications in the 700 to 2200 MHz. This LDMOS	Original	PDF	PTFA220121M PTFA220121M 12-watt PG-SON-10 c102 TRANSISTOR NFM18PS105R0J3 tl111 TRANSISTOR C802 TL204 TL231 c801 TL-205A tl113
XRF286 Abstract: XRF286S MRF286 MOTOROLA XRF286 47nj capacitor MRF286S MOTOROLA 934 100B910JP500X 95F769 CDR33BX104AKWS Text: MOTOROLA Order this document from WISD RF Marketing SEMICONDUCTOR TECHNICAL DATA MRF286 MRF286S The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Order sample parts by XRF286,S PILOT PRODUCTION PROTOTYPE	Original	PDF	MRF286 MRF286S XRF286 MRF286 MRF286, MRF286S XRF286S MOTOROLA XRF286 47nj capacitor MOTOROLA 934 100B910JP500X 95F769 CDR33BX104AKWS
Untitled Abstract: No abstract text available Text: PTFB183408SV High Power RF LDMOS Field Effect Transistor 340 W, 30 V, 1805 – 1880 MHz Description The PTFB183408SV is a 340-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 1805 to 1880 MHz frequency band. Features include input and output matching, high gain and thermally-enhanced package with earless flange.	Original	PDF	PTFB183408SV PTFB183408SV 340-watt
TL225 Abstract: ATC100A6R2CW150X Text: PTFA220121M Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 12 W, 28 V, 700 – 2200 MHz Description The PTFA220121M is an unmatched 12-watt LDMOS FET intended for power amplifier applications in the 700 to 2200 MHz. This LDMOS	Original	PDF	PTFA220121M PTFA220121M 12-watt PG-SON-10 TL225 ATC100A6R2CW150X
C801 Abstract: 1/db3 c801 Text: PTFA220121M Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 12 W, 700 – 2200 MHz Description The PTFA220121M is an unmatched 12-watt LDMOS FET intended for power ampliier applications in the 700 to 2200 MHz. This LDMOS	Original	PDF	PTFA220121M PTFA220121M 12-watt PG-SON-10 C801 1/db3 c801

SSW-424 Abstract: IS-136 Text: Product Description Stanford Microdevices SSW-424 is a high performance Gallium Arsenide Field Effect Transistor MMIC switch housed in a lowcost surface mountable small outline ceramic package. This single-pole, double-throw reflective switch consumes less	Original	PDF	SSW-424 IS-95, IS-136, 55dBm EDS-101100 IS-136
transistor c735 Abstract: ATC100A120FW150XB TRANSISTOR c104 TL107 c103 m TRANSISTOR c103 TRANSISTOR TRANSISTOR C802 C735 transistor TRANSISTOR C107 TRANSISTOR C103 Text: PTFA220041M Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 4 W, 700 – 2200 MHz Description The PTFA220041M is an unmatched 4-watt LDMOS FET intended for power amplifier applications in the 700 MHz to 2200 MHz operating range. This LDMOS device offers excellent gain, efficiency	Original	PDF	PTFA220041M PTFA220041M PG-SON-10 transistor c735 ATC100A120FW150XB TRANSISTOR c104 TL107 c103 m TRANSISTOR c103 TRANSISTOR TRANSISTOR C802 C735 transistor TRANSISTOR C107 TRANSISTOR C103
FPD1500 Abstract: SSG 23 TRANSISTOR stu 407 BC 148 TRANSISTOR DATASHEET TRANSISTOR BC 135 TRANSISTOR BC 157 FPD1500DFN FPD750SOT89 InGaAs hemt biasing EB1500DFN-BE Text: FPD1500DFN FPD1500DFN Low Noise High Linearity Power pHEMT LOW NOISE HIGH LINEARITY POWER pHEMT Package: 2mmx2mm DFN Product Description Features The FPD1500DFN is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT . It utilizes a	Original	PDF	FPD1500DFN FPD1500DFN mx750 27dBm 85GHz 42dBm 85GHz) EB1500DFN-BA FPD1500 SSG 23 TRANSISTOR stu 407 BC 148 TRANSISTOR DATASHEET TRANSISTOR BC 135 TRANSISTOR BC 157 FPD750SOT89 InGaAs hemt biasing EB1500DFN-BE
Untitled Abstract: No abstract text available Text: PTFB183408SV Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 340 W, 30 V, 1805 – 1880 MHz Description The PTFB183408SV is a 340-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 1805 to	Original	PDF	PTFB183408SV PTFB183408SV 340-watt
TL172 Abstract: TL170 Text: PTFB183404E PTFB183404F Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistors 340 W, 1805 – 1880 MHz Description The PTFB183404E and PTFB183404F are 340-watt LDMOS FETs intended for use in multi-standard cellular power ampliier applications	Original	PDF	PTFB183404E PTFB183404F PTFB183404E PTFB183404F 340-watt H-37275-6/2 TL172 TL170
TUBE Light Choke connection diagram Abstract: 6V DC-AC Fluorescent lamp 12V DC to 500V AC inverters circuit diagram circuit fluorescent tube 24v schematic diagram dc-ac inverter emergency light schematic diagram dc-ac inverter TUBE Light Choke Coil Winding 12v inverter schematic dc to ac for fluorescent emergency fluorescent light schematic diagram inverter circuit dc to ac 2V to 100V Text: Application Note 17 Issue 2 March 1996 Emergency Lighting Systems and Battery Powered Fluorescent Lighting High Current TO92 Switching Transistors Provide 87% DC-AC Conversion Efficiency David Bradbury Neil Chadderton Introduction E m e r g e n c y l i g h t i n g s y s te m s a r e	Original	PDF	50MHz TUBE Light Choke connection diagram 6V DC-AC Fluorescent lamp 12V DC to 500V AC inverters circuit diagram circuit fluorescent tube 24v schematic diagram dc-ac inverter emergency light schematic diagram dc-ac inverter TUBE Light Choke Coil Winding 12v inverter schematic dc to ac for fluorescent emergency fluorescent light schematic diagram inverter circuit dc to ac 2V to 100V
VdS 2093 2009 Abstract: TL2014 transistor c114 chip transistor c114 diagram TL243 PTFB213004F TL145 tl1571 TL1621 transistor c114 Text: PTFB213004F Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 300 W, 2110 – 2170 MHz Description The PTFB213004F is a 300-watt LDMOS FET designed for class AB operation in cellular amplifiers covering the 2110 to 2170 MHz	Original	PDF	PTFB213004F PTFB213004F 300-watt H-37275-6/2 VdS 2093 2009 TL2014 transistor c114 chip transistor c114 diagram TL243 TL145 tl1571 TL1621 transistor c114
ROSA Abstract: transistor w7 electronic circuit for rosa TIA bonding integrated ROSA PIN-TIA Text: Application Note: HFAN-3.2.0 Rev.1; 04/08 Improving Noise Rejection of a PIN-TIA ROSA Maxim Integrated Products Improving Noise Rejection of a PIN-TIA ROSA VCC CFILT PD W1 W5 W3A W5 W2 IN OUT- FILT 1 Example of ROSA Assembly W4 CVCC CASE VCC For successful optical transceiver design, it is	Original	PDF
marking z7 Abstract: Z4 SOT23 FMMD3102 BZX84C18 C5V6 BZX84C5V6 z3 ZC831 marking Y4 C3V9 FMMD914 Text: SOT-23 TRANSISTORS & DIODES PRODUCT LIST AND DEVICE IDENTIFICATION D IO D ES Device Type D IO D ES Device m arking Device Type Device m arking BAV70 A4 B ZX84-C43 X6 BAV74 JA B ZX84-C47 X7 BAV99 A7 F M M D I0 9 4A BAW 56 A1 FM M D 914 5D B Z X 8 4 C2V7 W4	OCR Scan	PDF	OT-23 BAV70 BZX84-C43 BZX84-C47 BAV99 FMMD109 BAW56 FMMD914 BZX84 FMMD3102 marking z7 Z4 SOT23 FMMD3102 BZX84C18 C5V6 BZX84C5V6 z3 ZC831 marking Y4 C3V9 FMMD914
D863 Abstract: No abstract text available Text: Ordering number: EN 575D _ 2SB764/2SD863 No.575D PNP/ NPN Epitaxial Planar Silicon Transistors Voltage Regulator, Relay Lamp Driver Electrical Equipment Applications :2SB76*t Absolute Maxima Ratings at Ta:=25°C Collector to Base Voltage Collector to Emitter Voltage	OCR Scan	PDF	2SB764/2SD863 2SB76 2SB76V2SD863 SC-51 4017KI/3085MW 764/2S D863

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B W4 TRANSISTOR Search Results

B W4 TRANSISTOR Result Highlights (5)

B W4 TRANSISTOR Datasheets Context Search

FET K105

B W4 Transistor

NT 407 F TRANSISTOR

capacitor marking c106

TL113

c102 TRANSISTOR

TL139

TL139

TRANSISTOR C802

c102 TRANSISTOR

XRF286

Untitled

TL225

C801

SSW-424

transistor c735

FPD1500

Untitled

TL172

TUBE Light Choke connection diagram

VdS 2093 2009

ROSA

marking z7

D863