MS2520
Abstract: MS25201-5 ms2520-68n-lf
Text: Coilmaster Electronics Co., Ltd. E-mail :[email protected] Web Site : www.coilmaster.com.tw 9F-3 No.398, Huan Bei Rd. Chung Li City, Taoyuan 320, Taiwan Tel : +886-3-422-8279 Fax : +886-3-422-8734 MS2520 SERIES ~ Wire Wound Ceramic Chip Inductors PART NUMBERING SYSTEM
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MS2520
60ACTERISTICS
178mm)
330mm)
MS2520
MS25201-5
ms2520-68n-lf
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SS2012
Abstract: No abstract text available
Text: Coilmaster Electronics Co., Ltd. 9F-3 No.398, Huan Bei Rd. Chung Li City, Taoyuan 320, Taiwan Tel : +886-3-422-8279 Fax : +886-3-422-8734 E-mail :[email protected] Web Site : www.coilmaster.com.tw SS2012 SERIES ~ Spring Air Core Inductors FEATURES z SMD type air core inductor .
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SS2012
SS2012-27NK-LF
SS2012-33NK-LF
SS2012-39NK-LF
SS2012-47NK-LF
SS2012-56NK-LF
SS2012-R68K-LF
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9N60
Abstract: MOSFET IXYS TO-263
Text: Advanced Technical Information PolarHVTM Power MOSFET IXTA 9N60P IXTP 9N60P VDSS ID25 RDS on = 600 V = 9 A Ω = 540 mΩ N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ VGSM
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9N60P
9N60P
O-220
O-263
405B2
9N60
MOSFET IXYS TO-263
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Untitled
Abstract: No abstract text available
Text: CHIP INDUCTOR WIRE WOUND TYPE SWI 1008 2520 CERAMIC SERIES Specification Inductance 1 (nH) Percent Q2 S.R.F. 3 RDC 4 IDC 5 Tolerance Min Min Max Max (MHz) (Ω) (mA) Part No. SWI 1008 CT 3N3 3.3 @ 100 MHz B, S 50 @ 1000 MHz 6000 0.06 1000 SWI 1008 CT 6N8
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HP-4287A
E5071B
HP-16193
HP-4338B
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Untitled
Abstract: No abstract text available
Text: Advanced Technical Information PolarHVTM Power MOSFET IXTA 10N60P IXTI 10N60P IXTP 10N60P VDSS ID25 RDS on = 600 V = 10 A Ω = 740 mΩ N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ
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10N60P
10N60P
O-263
O-220
405B2
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MOSFET IXYS TO-263
Abstract: No abstract text available
Text: Advanced Technical Information PolarHVTM Power MOSFET IXTA 10N60P IXTP 10N60P VDSS ID25 RDS on = 600 V = 10 A Ω = 740 mΩ N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ
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10N60P
10N60P
O-220
O-263
405B2
MOSFET IXYS TO-263
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MS3225
Abstract: No abstract text available
Text: Coilmaster Electronics Co., Ltd. 9F-3 No.398, Huan Bei Rd. Chung Li City, Taoyuan 320, Taiwan Tel : +886-3-422-8279 Fax : +886-3-422-8734 E-mail :[email protected] Web Site : www.coilmaster.com.tw MS3225 SERIES ~ Wire Wound Ceramic Chip Inductors PART NUMBERING SYSTEM
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MS3225
178mm)
330mm)
MS3225
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UM2316
Abstract: UM2300
Text: UM2300 SERIES 7.5 Watt DC-DC Converters ♦ 2:1 Input Range ♦ Efficiency to 82% ♦ Pi Input Filter ♦ Short Circuit Protection ♦ 200KHz Switching Frequency ♦ Six-Sided Shield ♦ Conductive EMI Meets CISPR22 Class A ♦ RoHS Compliant SPECIFICATIONS
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UM2300
200KHz
CISPR22
UM2300
UM2316
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Untitled
Abstract: No abstract text available
Text: UM2300 SERIES 7.5 Watt DC-DC Converters ♦ 2:1 Input Range ♦ Efficiency to 82% ♦ Pi Input Filter ♦ Short Circuit Protection ♦ 200KHz Switching Frequency ♦ Six-Sided Shield ♦ Conductive EMI Meets CISPR22 Class A SPECIFICATIONS OUTPUT SPECIFICATIONS
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UM2300
200KHz
CISPR22
UM2300
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FR9889
Abstract: FR9887 FR9886 FR9801 FR9882 fr9884 fr9888 FR9723 FR9886D FP6861C
Text: 2012-Q3 Boost DC/DC Part No. Key Features VIN V VOUT (V) I Limit (mA) Eff.% Max Freq. (KHz) Iq ( A) Is (μA) Shut Down FP6711 Low Start-up Sync. Boost Converter, Automatically PWM or PFM Mode 0.85~Vout 1.8~4 1000 94 500 25 1 V V MSOP-10 FP6731 Low Vin Step-up DC/DC Converter
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2012-Q3
FP6711
MSOP-10
OT-23-5
OT-23-3
FP6731
FP6733
25Ohm
OT-23-6
FR9889
FR9887
FR9886
FR9801
FR9882
fr9884
fr9888
FR9723
FR9886D
FP6861C
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RD4A
Abstract: 610C
Text: - "J m s it € p ll RD3. 9L RD3.9M RD3. 9MW RD3. 9P RD3. 9S RD3.9UH R D 3 .9UM RD 4.3E RD 4.3 BS RD4. 3F RD4. 3HS R D 4.3L RD4. 3M RD4. m RD4. 3P RD4. 3S RD4. 3 JH RD4. 3UM RD 4.7E R D 4 .7ES RD4. RD4. RD4. RD4. RD4. 7F 7FM 7HS 7J 7 JS RD4.7K R D 4.7L RD4.7M
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S40ms
g40m5-eÂ
40ms-eÂ
RD4A
610C
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416B
Abstract: 416C 610C
Text: - "J m RD 3. 6UM R D 3. 9E RD3. 9ES RD3. 9F RD3.9HS RD3. 9L RD3.9M RD3. 9MW RD3. 9P RD3. 9S RD3.9UH R D 3.9UM RD4.3E RD4.3BS RD4. 3F RD4. 3HS RD4.3L RD4. 3M RD4. m RD4. 3P RD4. 3S RD4. 3 JH RD4. 3UM RD 4.7E RD 4.7ES RD4. 7F RD4. 7FM RD4. 7HS RD4. 7J RD4. 7 JS
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S40ms
i15-0Â
25MIN
416B
416C
610C
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rd4a
Abstract: 610C RD4.3ES "RD4" 420-S rd39b
Text: - "J m RD 3. 6UM R D 3. 9E RD3. 9ES RD3. 9F RD3.9HS RD3. 9L RD3.9M RD3. 9MW RD3. 9P RD3. 9S RD3.9UH R D 3.9UM RD4.3E RD4.3BS RD4. 3F RD4. 3HS RD4.3L RD4. 3M RD4. m RD4. 3P RD4. 3S RD4. 3 JH RD4. 3UM RD 4.7E RD 4.7ES RD4. 7F RD4. 7FM RD4. 7HS RD4. 7J RD4. 7 JS
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S40ms
05mV/1C
g40m5-eÂ
40ms-eÂ
rd4a
610C
RD4.3ES
"RD4"
420-S
rd39b
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610C
Abstract: No abstract text available
Text: - "J m RD 3. 6UM R D 3. 9E RD3. 9ES RD3. 9F RD3.9HS RD3. 9L RD3.9M RD3. 9MW RD3. 9P RD3. 9S RD3.9UH R D 3.9UM RD4.3E RD4.3BS RD4. 3F RD4. 3HS RD4.3L RD4. 3M RD4. m RD4. 3P RD4. 3S RD4. 3 JH RD4. 3UM RD 4.7E RD 4.7ES RD4. 7F RD4. 7FM RD4. 7HS RD4. 7J RD4. 7 JS
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S40ms
610C
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Untitled
Abstract: No abstract text available
Text: OHMITE LITTLE HENRIES Miniature High-Current Chokes Manufacturing Company 37 sta n d a rd in d u c ta n c e v a lu e s 38 in PS1 S eries P a cka g e d in he at sh rin ka b le , fla m e re ta rd a n t tu b in g w ith high re sistivity fe rrite coil form .
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Semikron SKB L5b
Abstract: Semikron SKB b 500 C 1000 B 380 C 1500 RD SKB2 BRIDGE C1000L5B semikron skb b 380 Semikron SKB2 Semikron SKB b 250 b500c1000 h 125 tam
Text: s e MIKRDN V rsm V 1 ,8 A V 120 40 400 125 800 250 1000 380 1200 500 V BR VvRMS V V 1300 500 Miniature Bridge Rectifiers Id (T am b = 4 5 ° C ) VvRMS V rrm 2 ,5 A R m in Types Cmax HF n SKB SKB SKB SKB SKB 5000 0 ,5 1600 1 .5 B 4 0 C 1000 L5B B 80 C 1000 L5B
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SKBB40C1500L5B
Semikron SKB L5b
Semikron SKB b 500 C 1000
B 380 C 1500 RD
SKB2 BRIDGE
C1000L5B
semikron skb b 380
Semikron SKB2
Semikron SKB b 250
b500c1000
h 125 tam
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WT 7520
Abstract: diode lt 8220 SAC 1630 L saa 1070 tic125 tsumu T920 thyristor GE 1780 scr 3f scr thyristor power diode 1000 volt 700 amper
Text: POWER SEMICONDUCTORS IN C 1TE D • 72^14^0 D0003b4 1 ■ POS "T-Ol-01 T'-ZS-C>| D PACK THYRISTOR POWER PACK TH YR ISTO R S 28mm. <25 mm.) RMS Forward Current Ave. Forward Current Peak One-Cycle Surge @ 8.3 ms I 2 t @ 8.3 ms Forward Voltage Drop Max. Operating Temperature
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T-Ol-01
-28-Unt-2A-
453/JJ5Ã
422M0
T0-94
h-755
WT 7520
diode lt 8220
SAC 1630 L
saa 1070
tic125
tsumu
T920 thyristor
GE 1780 scr
3f scr thyristor
power diode 1000 volt 700 amper
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zd2500
Abstract: WT 7520 CS 601 thyristor TIC125 T920 thyristor power diode 1000 volt 700 amper thyristor 100 amper diode lt 8220 cs 1694 eo saa 1070
Text: POWER SEMICONDUCTORS INC 1TE D • 7 2 ^ 1 4 ^ 0 D0003b4 1 ■ POS " T -O l-0 1 T '- Z S - C > | RMS Forward Current Ave. Forward Current Peak One-Cycle Surge @ 8.3 ms I 2 t @ 8.3 ms Forward Voltage Drop Max. Operating Temperature Symbol Units ' t RMS
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T-Ol-01
1001b.
254-turns
zd2500
WT 7520
CS 601 thyristor
TIC125
T920 thyristor
power diode 1000 volt 700 amper
thyristor 100 amper
diode lt 8220
cs 1694 eo
saa 1070
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TFK 544
Abstract: tfk 731 TA-1001 tfk 513 TF5001 TA501 tfk 531 TFK 744 TF251 TF501
Text: TRANSFORMERS daykin MACHINE TOOL & INDUSTRIAL CONTROL SINGLE PHASE - OPEN CONSTRUCTION ELECTRIC CORPORATION Features D and c g Listed (File No. E105527) 100% copper windings High quality silicon steel core material Slotted mounting for easy installation
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E105527)
049fi3
230VCT
TF501Q
TF1001Q
TF1501Q
TF2001Q
TF3001Q
TF5001Q
--115-cT
TFK 544
tfk 731
TA-1001
tfk 513
TF5001
TA501
tfk 531
TFK 744
TF251
TF501
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D53C1
Abstract: clarostat POTENTIOMETER dual 500k RV4 CLAROSTAT marking 53C AE30 spst clarostat POTENTIOMETER 380c1 5k clarostat POTENTIOMETER DPST-3A-125 clarostat 53c1 RV4NAYSD500A
Text: S e r ie s 380, 53/RV 4, 485 2 Watt, Conductive Plastic Potentiom eter S e r ie s 3 80, 5 3/RV4. 485, E le c tr ic a l S p e c it ic a t io n s Resistance Range 50i2 to 5 Megohms, linear. 250Q to 2.5 Megohms, tapered. 485 series only, 100i2 to 2.5 Megohm, linear.
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53/RV
100i2
500KQ
500Ki2
D53C1
clarostat POTENTIOMETER dual 500k
RV4 CLAROSTAT
marking 53C
AE30 spst
clarostat POTENTIOMETER 380c1 5k
clarostat POTENTIOMETER
DPST-3A-125
clarostat 53c1
RV4NAYSD500A
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clarostat 53c1
Abstract: 53c1sw D53C1 clarostat potentiometer 485 clarostat POTENTIOMETER clarostat POTENTIOMETER 50k 952M clarostat dual potentiometer
Text: Series 380. 53/RV4. Series 38D, 485 53/RV4, 485. Electrical Specifications 2 W a t t , C on du c ti ve Plastic Potentiometer Resistance Range 50£2 to 5 Megohms, linear. 250Q to 2.5 Megohms, tapered. 485 series only, 100Q to 2.5 Megohm, linear. Resistance Tolerance
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53/RV4.
53/RV4,
500KQ
clarostat 53c1
53c1sw
D53C1
clarostat potentiometer 485
clarostat POTENTIOMETER
clarostat POTENTIOMETER 50k
952M
clarostat dual potentiometer
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Untitled
Abstract: No abstract text available
Text: DL4728 thru DL4764 SILIC O N PLAN AR PO W ER Z E N E R DIODES Cathode Mark fo r use in s ta b ilizin g and clipp ing circu its w ith high pow er rating. S tan da rd Z e n e r vo lta g e to e ra n ce is 610% . Add 0 2 . 55 0 2 . 35 suffix "A " fo r 65% to le ra n ce . O th er to le ra n ce s a va ilab le
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DL4728
DL4764
DO-41
ZM4728.
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clarostat 53c1
Abstract: clarostat POTENTIOMETER 380c1 5k MEF 250 1.0K clarostat POTENTIOMETER 380c1 504a clarostat POTENTIOMETER 380c1 10k-s RV4 CLAROSTAT meg-350 105 35K 102 MEF 250
Text: Series 380, 53/RV4. 485 2 Watt, Co nd uc ti ve P la s t ic P olentiom eler Series 380. 53/RV4. 485, Electrical Specifications R esistance R ange 5 0 ft to 5 M egohm s, linear. 2 5 0 ft to 2.5 M egohm s, tapered. 485 series only, 100ft to 2.5 M egohm , linear.
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53/RV4.
MIL-R-94
53/RV4
MIL-R-94.
clarostat 53c1
clarostat POTENTIOMETER 380c1 5k
MEF 250 1.0K
clarostat POTENTIOMETER 380c1
504a
clarostat POTENTIOMETER 380c1 10k-s
RV4 CLAROSTAT
meg-350
105 35K 102
MEF 250
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XC100EP111
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Low -V oltage 1:10 D ifferential ECL/PECL/HSTL C lock Driver T he XC100EP111 is a low sk e w 1—to —10 differential driver, desig ned w ith clo c k distribu tion in m ind. It accepts tw o clo ck so u rce s into an input
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XC100EP111
EP111
10Ops
XC100EP111/D
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