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    9N60

    Abstract: MOSFET IXYS TO-263
    Text: Advanced Technical Information PolarHVTM Power MOSFET IXTA 9N60P IXTP 9N60P VDSS ID25 RDS on = 600 V = 9 A Ω = 540 mΩ N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ VGSM


    Original     		PDF 9N60P 9N60P O-220 O-263 405B2 9N60 MOSFET IXYS TO-263