Untitled
Abstract: No abstract text available
Text: High Definition MUSA VJF1224HDM FEATURES • Enhanced performance Standard MUSA compatibility Choice of panel colours Our Musa connectors have been redesigned to give improved performance up to 3 Gbit/s. Return loss is better than –15dB up to 1.5Ghz and better than –10dB up to 3Ghz as required by SMPTE424M.
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VJF1224HDM
SMPTE424M.
1080P
CuZn39Pb2
Aug-11
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l1117 18
Abstract: l1117 1.2 L1117 L1117 33 l1117 g L1117-3.3 L1117-1.8 l111718 voltage regulator l1117 L1117-18
Text: NIKO-SEM 1A Fixed and Adjustable Low Dropout Linear Regulator LDO L1117 Series SOT-223, TO-252, TO-220,TO-263 GENERAL DESCRIPTION FEATURES The L1117 Series are positive and low dropout three-terminal voltage regulators with 1A output current capability. These devices
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L1117
OT-223,
O-252,
O-220
O-263
OT-223
O-252
l1117 18
l1117 1.2
L1117 33
l1117 g
L1117-3.3
L1117-1.8
l111718
voltage regulator l1117
L1117-18
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Untitled
Abstract: No abstract text available
Text: 5SDD 38F2000 5SDD 38F2000 Old part no. DV 818-3800-20 Rectifier Diode Properties Industry standard housing Suitable for parallel operation High operating temperature Low forward voltage drop Key Parameters V RRM = 2 000 I FAVm = 3 730 I FSM = 34 000 V TO = 0.915
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38F2000
1768/138a,
DV/158/05a
Aug-11
Aug-11
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ABB thyristor
Abstract: thyristor ABB pt 2399
Text: 5STR 07F2541 5STR 07F2541 Old part no. TP 918F-675-25 Reverse Conducting Thyristor Properties Integrated freewheeling diode Optimized for low dynamic losses Applications Traction Key Parameters V DRM = I TAVm = I TSM = V TO = rT = tq = 2500 760 14 000 1.391
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07F2541
918F-675-25
07F2541
1768/138a,
TP/174/05a
Aug-11
ABB thyristor
thyristor ABB
pt 2399
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dt 92 abb
Abstract: No abstract text available
Text: 5SDD 36K5000 5SDD 36K5000 Old part no. DV 889B-3600-50 Rectifier Diode Properties Industry standard housing Suitable for parallel operation High operating temperature Low forward voltage drop Explosive protection Key Parameters V RRM = 5 000 I FAVm = 3 638
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36K5000
889B-3600-50
1768/138a,
DV/211/06a
Aug-11
dt 92 abb
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Untitled
Abstract: No abstract text available
Text: 5SDF 04D4504 5SDF 04D4504 Old part no. DM 827-360-45 Fast Recovery Diode Properties Optimized recovery characteristics Industry standard housing Applications suited for GTO applications Key Parameters V RRM = 4 500 I FAVm = 361 I FSM = 6 000 V TO = 1.858 rT
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04D4504
1768/138a,
DM/219/06a
Aug-11
04D4504A
Aug-11
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5SDD31H6000
Abstract: No abstract text available
Text: 5SDD 31H6000 5SDD 31H6000 Old part no. DV 889-3300-60 High Voltage Diode Properties Industry standard housing Suitable for parallel operation High operating temperature Low forward voltage drop Key Parameters V RRM = 6 000 I FAVm = 3 246 I FSM = 40 000 V TO
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31H6000
1768/138a,
DV/259/08b
Aug-11
Aug-11
5SDD31H6000
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Untitled
Abstract: No abstract text available
Text: BAR89. Silicon PIN Diode • Optimized for antenna switches in hand held applications • Very low capacitance at zero volts reverse bias at frequencies above 1GHz typ. 0.19 pF • Low forward resistance (typ. 0.8Ω @ IF = 10mA) • Very low signal distortion
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BAR89.
BAR89-02L
BAR89-02LRH
BAR89-02LRH*
BAR89-02L,
BAR89-02LRH,
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Untitled
Abstract: No abstract text available
Text: BAR89.E6816 Hitachi Silicon PIN Diode • Optimized for antenna switches in hand held applications • Very low capacitance at zero volts reverse bias at frequencies above 1 GHz typ. 0.19 pF • Low forward resistance (typ. 0.8Ω @ IF = 10mA) • Very low signal distortion
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BAR89.
E6816
BAR89-02L
BAR89-02LRH
BAR89-02LRH*
BAR89-02L,
Aug-11-2004
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5SDF06D2504
Abstract: abb 800
Text: 5SDF 06D2504 5SDF 06D2504 Old part no. DM 827-620-25 Fast Recovery Diode Properties Optimized recovery characteristics Industry standard housing Applications suited for GTO applications Key Parameters V RRM = 2 500 I FAVm = 615 I FSM = 10 000 V TO = 1.196
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06D2504
1768/138a,
DM/267/08a
Aug-11
06D250A
Aug-11
5SDF06D2504
abb 800
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5sdd24f2800
Abstract: No abstract text available
Text: 5SDD 24F2800 5SDD 24F2800 Old part no. DV 818-2480-28 Rectifier Diode Properties Industry standard housing Suitable for parallel operation High operating temperature Low forward voltage drop Key Parameters V RRM = 2 800 I FAVm = 2 596 I FSM = 30 000 V TO = 0.906
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24F2800
1768/138a,
D/059/02c
Aug-11
Aug-11
5sdd24f2800
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5SDD48H3200
Abstract: No abstract text available
Text: 5SDD 48H3200 5SDD 48H3200 Old part no. DV 889-4650-32 Rectifier Diode Properties Industry standard housing Suitable for parallel operation High operating temperature Low forward voltage drop Key Parameters V RRM = 3 200 I FAVm = 4 708 I FSM = 61 000 V TO = 0.992
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48H3200
1768/138a,
DV/197/06b
Aug-11
Aug-11
5SDD48H3200
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5SDF12F3005
Abstract: dm265 12F3
Text: 5SDF 12F3005 5SDF 12F3005 Old part no. DM 818-1200-30 Fast Recovery Diode Properties Optimized recovery characteristics Industry standard housing Applications suited for GTO applications Key Parameters V RRM = 3 000 I FAVm = 1 256 I FSM = 19 000 V TO = 1.195
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12F3005
12F3005
12F2505
1768/138a,
DM/265/08a
Aug-11
Aug-11
5SDF12F3005
dm265
12F3
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Untitled
Abstract: No abstract text available
Text: 5SDD 20F5000 5SDD 20F5000 Old part no. DV 818-2000-50 Rectifier Diode Properties Key Parameters V RRM = 5 000 I FAVm = 1 978 I FSM = 24 000 V TO = 0.940 rT = 0.284 low forward voltage drop low recovery charge high operating temperature low leakage current
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20F5000
1768/138a,
D/052/01c
Aug-11
Aug-11
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827C-800-50
Abstract: No abstract text available
Text: 5SDD 08T5000 5SDD 08T5000 Old part no. DV 827C-800-50 Rectifier Diode Properties Key Parameters V RRM = 5 000 I FAVm = 1 028 I FSM = 12 000 V TO = 0.894 rT = 0.487 low forward voltage drop low recovery charge high operating temperature low leakage current
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08T5000
827C-800-50
1768/138a,
DV/275/08a
Aug-11
Aug-11
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5SDF12T3005
Abstract: No abstract text available
Text: 5SDF 12T3005 5SDF 12T3005 Old part no. DM 818C-1200-30 Fast Recovery Diode Properties Optimized recovery characteristics Industry standard housing Applications suited for GTO applications Key Parameters V RRM = 3 000 I FAVm = 1 256 I FSM = 19 000 V TO = 1.195
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12T3005
818C-1200-30
12T3005
12T2505
1768/138a,
DM/266/08a
Aug-11
5SDF12T3005
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845i
Abstract: No abstract text available
Text: 5SDD 09D6000 5SDD 09D6000 Old part no. DV 827-850-60 High Voltage Diode Key Parameters V RRM = 6 000 I FAVm = 845 I FSM = 11 000 V TO = 0.893 rT = 0.647 Properties Low forward voltage drop Low recovery charge High operating temperature Low leakage current
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09D6000
1768/138a,
DV/261/08a
Aug-11
Aug-11
845i
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Untitled
Abstract: No abstract text available
Text: BFP620 NPN Silicon Germanium RF Transistor 3 4 • High gain low noise RF transistor • Provides outstanding performance for a wide range of wireless applications 2 • Ideal for CDMA and WLAN applications • Outstanding noise figure F = 0.7 dB at 1.8 GHz
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BFP620
VPS05605
OT343
Aug-11-2004
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Untitled
Abstract: No abstract text available
Text: BFP620 NPN Silicon Germanium RF Transistor 3 4 • High gain low noise RF transistor • Provides outstanding performance for a wide range of wireless applications 2 • Ideal for CDMA and WLAN applications • Outstanding noise figure F = 0.7 dB at 1.8 GHz
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BFP620
VPS05605
OT343
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Untitled
Abstract: No abstract text available
Text: Data sheet, Rev. 2.1, Sept. 2011 6ED003L02-F Integrated 3 Phase Gate Driver Special Power IC – Drivers N e v e r s t o p t h i n k i n g 6ED003L02-F Integrated 3 Phase Gate Driver 6ED003L02-F Revision History: Previous Version: Page 6 2011-08 Rev. 2.1 2.1
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6ED003L02-F
Aug-11
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AK8125AV
Abstract: AK8125A
Text: AK8125AV Spread Spectrum Clock Generator AK8125AV Features Description Input Frequency: - Crystal: 6.1-36MHz - External: 6.1- 49.92MHz Configurable Spread Spectrum Modulation: The AK8125A is a spread spectrum clock generator designed for general purpose EMI
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AK8125AV
1-36MHz
92MHz
30KHz
AK8125A
10-pin
MS1257-E-01
Aug-11
AK8125AV
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YC-160R
Abstract: cn1e JST B4P-VH
Text: • Medical & ITE Certifications • BF Rated • Very Low 1" profile • Industry Standard Footprint • Up to 89% Efficient • <0.3W Off-load Power Draw Key Market Segments & Applications Medical MWS65 Series Test & Measurement Point of Sale Datacom 2 x 4” 55 to 67W AC-DC Power Supplies
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MWS65
230VAC)
Aug11
YC-160R
cn1e
JST B4P-VH
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Untitled
Abstract: No abstract text available
Text: NOTES: I MATERIALS TH 1 RD AND - PTFE COPPER 4. 5. R E V 1S I O N S ^ PLATED MI N . 00C THICK ALLOY, NICKEL A RELEASE PLATED THICK) (.000100 DIM WA S 1.65; 7 WA S DIM. A. TEMPERATURE RANGE: -40° C PACKAGING: A. Q U A N T I T Y : S I N G L E PACK B. MARKI NG:
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-Aug-11
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SI-52003-F
Abstract: 52003
Text: THE INFORMATION CONTAINED HEREIN IS CONSIDERED 'PROPRIETARY' TO BEL FUSE INC. AND SHALL NOT BE COPIED, REPRODUCED OR DISCLOSED WITHOUT THE WRITTEN APPROVAL OF BEL FUSE INC. RoHS 2002/95/EC, ELECTRICAL CHARACTERISTICS 2 5 'C 1.0 TURNS RATIO: P1—P3 :(J1—J2)
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350uH
100KHz,
2002/95/EC.
Aug-11-2008
10/100BT,
SI-52003-F
SI-52003-F
52003
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